FI892958A0 - Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning. - Google Patents

Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning.

Info

Publication number
FI892958A0
FI892958A0 FI892958A FI892958A FI892958A0 FI 892958 A0 FI892958 A0 FI 892958A0 FI 892958 A FI892958 A FI 892958A FI 892958 A FI892958 A FI 892958A FI 892958 A0 FI892958 A0 FI 892958A0
Authority
FI
Finland
Prior art keywords
foer
integrerad
halvledaranordning
krets
och foerfarande
Prior art date
Application number
FI892958A
Other languages
English (en)
Other versions
FI892958A (fi
Inventor
Juergen Daugs
Hans Eberhard Kroebel
Juergen Knopke
Original Assignee
Halbleiterwerk Frankfurt Oder
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Halbleiterwerk Frankfurt Oder filed Critical Halbleiterwerk Frankfurt Oder
Publication of FI892958A0 publication Critical patent/FI892958A0/fi
Publication of FI892958A publication Critical patent/FI892958A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FI892958A 1988-07-06 1989-06-16 Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning. FI892958A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD31762188 1988-07-06

Publications (2)

Publication Number Publication Date
FI892958A0 true FI892958A0 (fi) 1989-06-16
FI892958A FI892958A (fi) 1990-01-07

Family

ID=5600720

Family Applications (1)

Application Number Title Priority Date Filing Date
FI892958A FI892958A (fi) 1988-07-06 1989-06-16 Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning.

Country Status (2)

Country Link
DE (1) DE3916707A1 (fi)
FI (1) FI892958A (fi)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19636954B4 (de) * 1996-09-11 2005-08-18 Infineon Technologies Ag Teilnehmerschaltung
DE102007034801B4 (de) 2007-03-26 2010-10-28 X-Fab Semiconductor Foundries Ag BiMOS-Halbleiterbauelement mit Herstellverfahren mit Bipolarintegration ohne zusätzliche Maskenschritte
FR3045937A1 (fr) * 2015-12-21 2017-06-23 St Microelectronics Crolles 2 Sas Procede de fabrication d'un transistor jfet au sein d'un circuit integre et circuit integre correspondant.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3072028D1 (en) * 1979-11-23 1987-10-15 Alcatel Nv Dielectrically insulated semiconductor component and process for its manufacture
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates

Also Published As

Publication number Publication date
FI892958A (fi) 1990-01-07
DE3916707A1 (de) 1990-01-11

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Legal Events

Date Code Title Description
FD Application lapsed

Owner name: VEB HALBLEITERWERK FRANKFURT (ODER)