FI892958A - Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning. - Google Patents

Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning. Download PDF

Info

Publication number
FI892958A
FI892958A FI892958A FI892958A FI892958A FI 892958 A FI892958 A FI 892958A FI 892958 A FI892958 A FI 892958A FI 892958 A FI892958 A FI 892958A FI 892958 A FI892958 A FI 892958A
Authority
FI
Finland
Prior art keywords
foer
integrerad
halvledaranordning
krets
och foerfarande
Prior art date
Application number
FI892958A
Other languages
English (en)
Other versions
FI892958A0 (fi
Inventor
Juergen Daugs
Hans Eberhard Kroebel
Juergen Knopke
Original Assignee
Halbleiterwerk Frankfurt Oder
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Halbleiterwerk Frankfurt Oder filed Critical Halbleiterwerk Frankfurt Oder
Publication of FI892958A0 publication Critical patent/FI892958A0/fi
Publication of FI892958A publication Critical patent/FI892958A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FI892958A 1988-07-06 1989-06-16 Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning. FI892958A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD31762188 1988-07-06

Publications (2)

Publication Number Publication Date
FI892958A0 FI892958A0 (fi) 1989-06-16
FI892958A true FI892958A (fi) 1990-01-07

Family

ID=5600720

Family Applications (1)

Application Number Title Priority Date Filing Date
FI892958A FI892958A (fi) 1988-07-06 1989-06-16 Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning.

Country Status (2)

Country Link
DE (1) DE3916707A1 (fi)
FI (1) FI892958A (fi)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19636954B4 (de) * 1996-09-11 2005-08-18 Infineon Technologies Ag Teilnehmerschaltung
DE102007034801B4 (de) 2007-03-26 2010-10-28 X-Fab Semiconductor Foundries Ag BiMOS-Halbleiterbauelement mit Herstellverfahren mit Bipolarintegration ohne zusätzliche Maskenschritte
FR3045937A1 (fr) * 2015-12-21 2017-06-23 St Microelectronics Crolles 2 Sas Procede de fabrication d'un transistor jfet au sein d'un circuit integre et circuit integre correspondant.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030286B1 (de) * 1979-11-23 1987-09-09 Alcatel N.V. Dielektrisch isoliertes Halbleiterbauelement und Verfahren zur Herstellung
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates

Also Published As

Publication number Publication date
FI892958A0 (fi) 1989-06-16
DE3916707A1 (de) 1990-01-11

Similar Documents

Publication Publication Date Title
FI891593A0 (fi) Antiinflammatorisk hudvaordskomposition och foerfarande foer dess framstaellning.
FI900158A (fi) Foerseglad slutare och foerfarande foer dess framstaellning.
FI891591A0 (fi) Hudvaordskomposition och foerfarande foer dess framstaellning.
FI896080A0 (fi) Omslag foer tobaksprodukt och foerfarande foer dess framstaellning.
FI896079A0 (fi) Omslag foer tobaksprodukt och foerfarande foer dess framstaellning.
FI903769A0 (fi) Sammanfogande kaernspik med varierande vaeggtjocklek och foerfarande foer dess framstaellning.
FI881424A (fi) Tryckalster saekerstaellt med varningsfigur och foerfarande foer dess utarbetning.
FI892206A0 (fi) Olja-i-vatten-vaextskyddsemulsion och foerfarande foer dess anvaendning.
FI892549A (fi) Stoetabsorberande omslagsmaterial och foerfarande foer dess framstaellning.
FI894380A0 (fi) Foerbaettrad slipbar belaeggning och foerfarande foer dess framstaellning.
FI904020A0 (fi) Doserarbehaollare foer klaedtvaettmedel och dess upptagning och avgivning.
FI880042A (fi) Fartyg och dess lastnings- och lossningssystem.
FI895020A0 (fi) Foerbaettrad energifrigivande katalyt och dess anvaendning.
FI894334A0 (fi) Ny elektrolyscell och elektrolysenhet foer dess anvaendning.
FI892958A0 (fi) Halvledaranordning foer en integrerad krets och foerfarande foer dess tillverkning.
FI895924A0 (fi) Stabilt flytande enzymkoncentrat och foerfarande foer dess framstaellning.
FI904021A0 (fi) Doserarbehaollare foer klaedtvaettmedel och dess upptagning och avgivning.
FI891330A (fi) Kompaktlysroer och foerfarande foer dess framstaellning.
FI880783A (fi) Balkartat byggnadselement och foerfarande foer dess framstaellning.
FI882914A0 (fi) Fibertyghuvudbonad och foerfarande foer dess framstaellning.
FI885924A (fi) Pumpstation och foerfarande foer dess tillverkning.
FI911892A0 (fi) Saoll och foerfarande foer dess framstaellning.
FI884130A0 (fi) Wellpapp och foerfarande foer dess framstaellning.
FI880508A0 (fi) Elektrisk installationsdosa och foerfarande foer dess framstaellning.
FI885963A (fi) Baogram foer byggnad och foerfarande foer dess uppresning.

Legal Events

Date Code Title Description
FD Application lapsed

Owner name: VEB HALBLEITERWERK FRANKFURT (ODER)