FI873438A0 - Anordning foer att uppraetthaolla spaerrtillstaond i en fraonkopplingsbar tyristor. - Google Patents

Anordning foer att uppraetthaolla spaerrtillstaond i en fraonkopplingsbar tyristor.

Info

Publication number
FI873438A0
FI873438A0 FI873438A FI873438A FI873438A0 FI 873438 A0 FI873438 A0 FI 873438A0 FI 873438 A FI873438 A FI 873438A FI 873438 A FI873438 A FI 873438A FI 873438 A0 FI873438 A0 FI 873438A0
Authority
FI
Finland
Prior art keywords
uppraetthaolla
spaerrtillstaond
fraonkopplingsbar
tyristor
anordning foer
Prior art date
Application number
FI873438A
Other languages
English (en)
Other versions
FI873438A (fi
Inventor
Michael Peppel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of FI873438A0 publication Critical patent/FI873438A0/fi
Publication of FI873438A publication Critical patent/FI873438A/fi

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off
FI873438A 1986-08-18 1987-08-07 Anordning foer att uppraetthaolla spaerrtillstaond i en fraonkopplingsbar tyristor. FI873438A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3627935 1986-08-18

Publications (2)

Publication Number Publication Date
FI873438A0 true FI873438A0 (fi) 1987-08-07
FI873438A FI873438A (fi) 1988-02-19

Family

ID=6307607

Family Applications (1)

Application Number Title Priority Date Filing Date
FI873438A FI873438A (fi) 1986-08-18 1987-08-07 Anordning foer att uppraetthaolla spaerrtillstaond i en fraonkopplingsbar tyristor.

Country Status (4)

Country Link
US (1) US4853834A (fi)
EP (1) EP0256426A1 (fi)
JP (1) JPS6350117A (fi)
FI (1) FI873438A (fi)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629458B2 (fi) * 1973-07-02 1981-07-08
US4117350A (en) * 1977-03-31 1978-09-26 Rca Corporation Switching circuit
JPS56121363A (en) * 1980-02-28 1981-09-24 Hitachi Ltd Gate circuit for thyristor
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
DE3408516A1 (de) * 1984-03-08 1985-09-12 Siemens AG, 1000 Berlin und 8000 München Elektronischer schalter
DE3425414A1 (de) * 1984-07-10 1986-01-16 Siemens AG, 1000 Berlin und 8000 München Leistungsschalter mit einem abschaltthyristor

Also Published As

Publication number Publication date
JPS6350117A (ja) 1988-03-03
US4853834A (en) 1989-08-01
EP0256426A1 (de) 1988-02-24
FI873438A (fi) 1988-02-19

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Legal Events

Date Code Title Description
MM Patent lapsed

Owner name: SIEMENS AKTIENGESELLSCHAFT