FI20165361A - Laite ja menetelmä laitteen valmistamiseksi - Google Patents
Laite ja menetelmä laitteen valmistamiseksiInfo
- Publication number
- FI20165361A FI20165361A FI20165361A FI20165361A FI20165361A FI 20165361 A FI20165361 A FI 20165361A FI 20165361 A FI20165361 A FI 20165361A FI 20165361 A FI20165361 A FI 20165361A FI 20165361 A FI20165361 A FI 20165361A
- Authority
- FI
- Finland
- Prior art keywords
- making
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20165361A FI128447B (fi) | 2016-04-26 | 2016-04-26 | Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä |
JP2018555770A JP6936813B2 (ja) | 2016-04-26 | 2017-04-25 | 薄膜層の分析に関連する装置及びその製造方法 |
CN201780025310.0A CN109416247B (zh) | 2016-04-26 | 2017-04-25 | 与薄膜层分析有关的设备及其制造方法 |
EP17725289.7A EP3449210B1 (en) | 2016-04-26 | 2017-04-25 | Apparatus associated with analysis of thin film layer and manufacturing method thereof |
KR1020187033138A KR102359008B1 (ko) | 2016-04-26 | 2017-04-25 | 박막층 분석과 관련된 장치 및 그 제조 방법 |
PCT/FI2017/050312 WO2017187016A1 (en) | 2016-04-26 | 2017-04-25 | Apparatus associated with analysis of thin film layer and manufacturing method thereof |
US16/096,083 US11385049B2 (en) | 2016-04-26 | 2017-04-25 | Apparatus associated with analysis of thin film layer and manufacturing method thereof |
US17/750,580 US11668561B2 (en) | 2016-04-26 | 2022-05-23 | Apparatus associated with analysis of thin film layer and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20165361A FI128447B (fi) | 2016-04-26 | 2016-04-26 | Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä |
Publications (2)
Publication Number | Publication Date |
---|---|
FI20165361A true FI20165361A (fi) | 2017-10-27 |
FI128447B FI128447B (fi) | 2020-05-15 |
Family
ID=58765860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20165361A FI128447B (fi) | 2016-04-26 | 2016-04-26 | Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä |
Country Status (7)
Country | Link |
---|---|
US (2) | US11385049B2 (fi) |
EP (1) | EP3449210B1 (fi) |
JP (1) | JP6936813B2 (fi) |
KR (1) | KR102359008B1 (fi) |
CN (1) | CN109416247B (fi) |
FI (1) | FI128447B (fi) |
WO (1) | WO2017187016A1 (fi) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3901997A1 (en) | 2020-04-22 | 2021-10-27 | Murata Manufacturing Co., Ltd. | Electrical device for characterizing a deposition step such as atomic layer deposition (ald), and corresponding methods of fabricating and characterizing |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4134066A (en) * | 1977-03-24 | 1979-01-09 | International Business Machines Corporation | Wafer indexing system using a grid pattern and coding and orientation marks in each grid cell |
FI98325C (fi) | 1994-07-07 | 1997-05-26 | Vaisala Oy | Selektiivinen infrapunadetektori |
FI114755B (fi) | 2001-10-01 | 2004-12-15 | Valtion Teknillinen | Menetelmä ontelorakenteen muodostamiseksi SOI-kiekolle sekä SOI-kiekon ontelorakenne |
US6787387B2 (en) * | 2002-06-24 | 2004-09-07 | Matsushita Electric Industrial Co., Ltd. | Electronic device and method for fabricating the electronic device |
JP4166712B2 (ja) | 2004-01-29 | 2008-10-15 | 株式会社デンソー | ファブリペローフィルタ |
US7323401B2 (en) | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
JP2009218151A (ja) | 2008-03-12 | 2009-09-24 | National Institute For Materials Science | 試料作製評価装置 |
CN101819030B (zh) | 2009-02-27 | 2012-05-30 | 北京京东方光电科技有限公司 | 磁控溅射靶材表面粗糙度的监测方法和系统 |
EP2399863A1 (en) | 2010-06-22 | 2011-12-28 | Valtion Teknillinen Tutkimuskeskus | Multi-layer substrate structure and manufacturing method for the same |
FI20106359A (fi) | 2010-12-21 | 2012-06-22 | Teknologian Tutkimuskeskus Vtt Oy | Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne |
FI125897B (fi) | 2011-06-06 | 2016-03-31 | Teknologian Tutkimuskeskus Vtt Oy | Mikromekaanisesti säädettävä Fabry-Perot-interferometri ja menetelmä sen valmistamiseksi |
DE102012214664A1 (de) * | 2012-08-17 | 2014-02-20 | Leica Microsystems Cms Gmbh | Objektträger mit Bezugspunkten |
CN104937415A (zh) * | 2012-10-08 | 2015-09-23 | 科罗拉多州立大学研究基金会 | 使用毛细管基分析设备的基于距离的定量分析 |
-
2016
- 2016-04-26 FI FI20165361A patent/FI128447B/fi active IP Right Grant
-
2017
- 2017-04-25 US US16/096,083 patent/US11385049B2/en active Active
- 2017-04-25 KR KR1020187033138A patent/KR102359008B1/ko active IP Right Grant
- 2017-04-25 CN CN201780025310.0A patent/CN109416247B/zh active Active
- 2017-04-25 WO PCT/FI2017/050312 patent/WO2017187016A1/en active Application Filing
- 2017-04-25 EP EP17725289.7A patent/EP3449210B1/en active Active
- 2017-04-25 JP JP2018555770A patent/JP6936813B2/ja active Active
-
2022
- 2022-05-23 US US17/750,580 patent/US11668561B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN109416247B (zh) | 2021-07-13 |
CN109416247A (zh) | 2019-03-01 |
US20190120620A1 (en) | 2019-04-25 |
JP2019518939A (ja) | 2019-07-04 |
EP3449210C0 (en) | 2023-06-07 |
WO2017187016A1 (en) | 2017-11-02 |
FI128447B (fi) | 2020-05-15 |
JP6936813B2 (ja) | 2021-09-22 |
KR20180135001A (ko) | 2018-12-19 |
US11668561B2 (en) | 2023-06-06 |
US11385049B2 (en) | 2022-07-12 |
EP3449210A1 (en) | 2019-03-06 |
US20220290986A1 (en) | 2022-09-15 |
EP3449210B1 (en) | 2023-06-07 |
KR102359008B1 (ko) | 2022-02-04 |
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