FI20165361A - Laite ja menetelmä laitteen valmistamiseksi - Google Patents

Laite ja menetelmä laitteen valmistamiseksi

Info

Publication number
FI20165361A
FI20165361A FI20165361A FI20165361A FI20165361A FI 20165361 A FI20165361 A FI 20165361A FI 20165361 A FI20165361 A FI 20165361A FI 20165361 A FI20165361 A FI 20165361A FI 20165361 A FI20165361 A FI 20165361A
Authority
FI
Finland
Prior art keywords
making
Prior art date
Application number
FI20165361A
Other languages
English (en)
Swedish (sv)
Other versions
FI128447B (fi
Inventor
Riikka Puurunen
Feng Gao
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Priority to FI20165361A priority Critical patent/FI128447B/fi
Priority to US16/096,083 priority patent/US11385049B2/en
Priority to JP2018555770A priority patent/JP6936813B2/ja
Priority to PCT/FI2017/050312 priority patent/WO2017187016A1/en
Priority to CN201780025310.0A priority patent/CN109416247B/zh
Priority to KR1020187033138A priority patent/KR102359008B1/ko
Priority to EP17725289.7A priority patent/EP3449210B1/en
Publication of FI20165361A publication Critical patent/FI20165361A/fi
Application granted granted Critical
Publication of FI128447B publication Critical patent/FI128447B/fi
Priority to US17/750,580 priority patent/US11668561B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Chemical Vapour Deposition (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FI20165361A 2016-04-26 2016-04-26 Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä FI128447B (fi)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FI20165361A FI128447B (fi) 2016-04-26 2016-04-26 Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä
US16/096,083 US11385049B2 (en) 2016-04-26 2017-04-25 Apparatus associated with analysis of thin film layer and manufacturing method thereof
JP2018555770A JP6936813B2 (ja) 2016-04-26 2017-04-25 薄膜層の分析に関連する装置及びその製造方法
PCT/FI2017/050312 WO2017187016A1 (en) 2016-04-26 2017-04-25 Apparatus associated with analysis of thin film layer and manufacturing method thereof
CN201780025310.0A CN109416247B (zh) 2016-04-26 2017-04-25 与薄膜层分析有关的设备及其制造方法
KR1020187033138A KR102359008B1 (ko) 2016-04-26 2017-04-25 박막층 분석과 관련된 장치 및 그 제조 방법
EP17725289.7A EP3449210B1 (en) 2016-04-26 2017-04-25 Apparatus associated with analysis of thin film layer and manufacturing method thereof
US17/750,580 US11668561B2 (en) 2016-04-26 2022-05-23 Apparatus associated with analysis of thin film layer and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20165361A FI128447B (fi) 2016-04-26 2016-04-26 Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä

Publications (2)

Publication Number Publication Date
FI20165361A true FI20165361A (fi) 2017-10-27
FI128447B FI128447B (fi) 2020-05-15

Family

ID=58765860

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20165361A FI128447B (fi) 2016-04-26 2016-04-26 Ohutkalvokerroksen analysointiin liittyvä laite ja sen valmistusmenetelmä

Country Status (7)

Country Link
US (2) US11385049B2 (fi)
EP (1) EP3449210B1 (fi)
JP (1) JP6936813B2 (fi)
KR (1) KR102359008B1 (fi)
CN (1) CN109416247B (fi)
FI (1) FI128447B (fi)
WO (1) WO2017187016A1 (fi)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3901997A1 (en) 2020-04-22 2021-10-27 Murata Manufacturing Co., Ltd. Electrical device for characterizing a deposition step such as atomic layer deposition (ald), and corresponding methods of fabricating and characterizing

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4134066A (en) 1977-03-24 1979-01-09 International Business Machines Corporation Wafer indexing system using a grid pattern and coding and orientation marks in each grid cell
FI98325C (fi) * 1994-07-07 1997-05-26 Vaisala Oy Selektiivinen infrapunadetektori
FI114755B (fi) 2001-10-01 2004-12-15 Valtion Teknillinen Menetelmä ontelorakenteen muodostamiseksi SOI-kiekolle sekä SOI-kiekon ontelorakenne
US6787387B2 (en) * 2002-06-24 2004-09-07 Matsushita Electric Industrial Co., Ltd. Electronic device and method for fabricating the electronic device
JP4166712B2 (ja) * 2004-01-29 2008-10-15 株式会社デンソー ファブリペローフィルタ
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
JP2009218151A (ja) 2008-03-12 2009-09-24 National Institute For Materials Science 試料作製評価装置
CN101819030B (zh) * 2009-02-27 2012-05-30 北京京东方光电科技有限公司 磁控溅射靶材表面粗糙度的监测方法和系统
EP2399863A1 (en) * 2010-06-22 2011-12-28 Valtion Teknillinen Tutkimuskeskus Multi-layer substrate structure and manufacturing method for the same
FI20106359A (fi) 2010-12-21 2012-06-22 Teknologian Tutkimuskeskus Vtt Oy Menetelmä ultraäänianturin valmistamiseksi ja anturirakenne
FI125897B (fi) * 2011-06-06 2016-03-31 Teknologian Tutkimuskeskus Vtt Oy Mikromekaanisesti säädettävä Fabry-Perot-interferometri ja menetelmä sen valmistamiseksi
DE102012214664A1 (de) * 2012-08-17 2014-02-20 Leica Microsystems Cms Gmbh Objektträger mit Bezugspunkten
US20140178978A1 (en) * 2012-10-08 2014-06-26 Colorado State University Research Foundation Distance-based quantitative analysis using a capillarity-based analytical device

Also Published As

Publication number Publication date
KR102359008B1 (ko) 2022-02-04
WO2017187016A1 (en) 2017-11-02
JP6936813B2 (ja) 2021-09-22
CN109416247A (zh) 2019-03-01
JP2019518939A (ja) 2019-07-04
EP3449210B1 (en) 2023-06-07
EP3449210A1 (en) 2019-03-06
US20220290986A1 (en) 2022-09-15
KR20180135001A (ko) 2018-12-19
US11385049B2 (en) 2022-07-12
US20190120620A1 (en) 2019-04-25
US11668561B2 (en) 2023-06-06
EP3449210C0 (en) 2023-06-07
CN109416247B (zh) 2021-07-13
FI128447B (fi) 2020-05-15

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