FI20105906A0 - Anordning - Google Patents

Anordning

Info

Publication number
FI20105906A0
FI20105906A0 FI20105906A FI20105906A FI20105906A0 FI 20105906 A0 FI20105906 A0 FI 20105906A0 FI 20105906 A FI20105906 A FI 20105906A FI 20105906 A FI20105906 A FI 20105906A FI 20105906 A0 FI20105906 A0 FI 20105906A0
Authority
FI
Finland
Application number
FI20105906A
Other languages
English (en)
Finnish (fi)
Inventor
Jari Sinkko
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105906A priority Critical patent/FI20105906A0/sv
Publication of FI20105906A0 publication Critical patent/FI20105906A0/sv
Priority to PCT/FI2011/050743 priority patent/WO2012028776A1/en
Priority to CN201180041755.0A priority patent/CN103108985B/zh
Priority to TW100130644A priority patent/TW201219596A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FI20105906A 2010-08-30 2010-08-30 Anordning FI20105906A0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20105906A FI20105906A0 (sv) 2010-08-30 2010-08-30 Anordning
PCT/FI2011/050743 WO2012028776A1 (en) 2010-08-30 2011-08-25 Apparatus
CN201180041755.0A CN103108985B (zh) 2010-08-30 2011-08-25 用于处理柔性基底的表面的装置
TW100130644A TW201219596A (en) 2010-08-30 2011-08-26 Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105906A FI20105906A0 (sv) 2010-08-30 2010-08-30 Anordning

Publications (1)

Publication Number Publication Date
FI20105906A0 true FI20105906A0 (sv) 2010-08-30

Family

ID=42669410

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105906A FI20105906A0 (sv) 2010-08-30 2010-08-30 Anordning

Country Status (4)

Country Link
CN (1) CN103108985B (sv)
FI (1) FI20105906A0 (sv)
TW (1) TW201219596A (sv)
WO (1) WO2012028776A1 (sv)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8470718B2 (en) 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
WO2013140021A1 (en) * 2012-03-23 2013-09-26 Picosun Oy Atomic layer deposition method and apparatuses
FI125341B (sv) * 2012-07-09 2015-08-31 Beneq Oy Apparatur och metod för processing av substrat
DE102012111484A1 (de) * 2012-11-27 2014-05-28 Aixtron Se Vorrichtung und Verfahren zum Bearbeiten streifenförmiger Substrate
NL2027074B1 (en) 2020-12-08 2022-07-07 Kalpana Tech B V Roll-to-roll processing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133165A (ja) * 2003-10-31 2005-05-26 Masahito Yonezawa 帯状基板の処理装置及び処理方法
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
JP5092624B2 (ja) * 2007-08-24 2012-12-05 大日本印刷株式会社 ガスバリア膜の作製方法及び作製装置
US20110023775A1 (en) * 2009-07-31 2011-02-03 E.I. Du Pont De Nemours And Company Apparatus for atomic layer deposition
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface
EP2360293A1 (en) * 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate

Also Published As

Publication number Publication date
WO2012028776A1 (en) 2012-03-08
CN103108985B (zh) 2015-02-11
TW201219596A (en) 2012-05-16
CN103108985A (zh) 2013-05-15

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Legal Events

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