FI20105472A0 - Lähde ja järjestely substraatin käsittelemiseksi - Google Patents
Lähde ja järjestely substraatin käsittelemiseksiInfo
- Publication number
- FI20105472A0 FI20105472A0 FI20105472A FI20105472A FI20105472A0 FI 20105472 A0 FI20105472 A0 FI 20105472A0 FI 20105472 A FI20105472 A FI 20105472A FI 20105472 A FI20105472 A FI 20105472A FI 20105472 A0 FI20105472 A0 FI 20105472A0
- Authority
- FI
- Finland
- Prior art keywords
- outlets
- processing substrates
- substrates
- processing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105472A FI124414B (fi) | 2010-04-30 | 2010-04-30 | Lähde ja järjestely substraatin käsittelemiseksi |
EP11726460.6A EP2563948B1 (en) | 2010-04-30 | 2011-04-29 | Source and arrangement for processing a substrate |
CN201180021683.3A CN102869809B (zh) | 2010-04-30 | 2011-04-29 | 用于加工基底的源和布置 |
EA201291110A EA027960B1 (ru) | 2010-04-30 | 2011-04-29 | Источник и устройство для обработки подложки |
PCT/FI2011/050391 WO2011135190A1 (en) | 2010-04-30 | 2011-04-29 | Source and arrangement for processing a substrate |
US13/639,394 US9394610B2 (en) | 2010-04-30 | 2011-04-29 | Source and arrangement for processing a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105472A FI124414B (fi) | 2010-04-30 | 2010-04-30 | Lähde ja järjestely substraatin käsittelemiseksi |
FI20105472 | 2010-04-30 |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20105472A0 true FI20105472A0 (fi) | 2010-04-30 |
FI20105472A FI20105472A (fi) | 2011-10-31 |
FI124414B FI124414B (fi) | 2014-08-29 |
Family
ID=42133311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20105472A FI124414B (fi) | 2010-04-30 | 2010-04-30 | Lähde ja järjestely substraatin käsittelemiseksi |
Country Status (6)
Country | Link |
---|---|
US (1) | US9394610B2 (fi) |
EP (1) | EP2563948B1 (fi) |
CN (1) | CN102869809B (fi) |
EA (1) | EA027960B1 (fi) |
FI (1) | FI124414B (fi) |
WO (1) | WO2011135190A1 (fi) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2360293A1 (en) * | 2010-02-11 | 2011-08-24 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
FI124414B (fi) * | 2010-04-30 | 2014-08-29 | Beneq Oy | Lähde ja järjestely substraatin käsittelemiseksi |
FI124113B (fi) | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
KR102420015B1 (ko) * | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3384049A (en) * | 1966-10-27 | 1968-05-21 | Emil R. Capita | Vapor deposition apparatus including centrifugal force substrate-holding means |
US3637434A (en) * | 1968-11-07 | 1972-01-25 | Nippon Electric Co | Vapor deposition apparatus |
FR2490246A1 (fr) | 1980-09-17 | 1982-03-19 | Cit Alcatel | Dispositif de deposition chimique activee sous plasma |
US4501766A (en) * | 1982-02-03 | 1985-02-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Film depositing apparatus and a film depositing method |
US4597986A (en) * | 1984-07-31 | 1986-07-01 | Hughes Aircraft Company | Method for photochemical vapor deposition |
US5114770A (en) * | 1989-06-28 | 1992-05-19 | Canon Kabushiki Kaisha | Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method |
US5629054A (en) * | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
JP3101330B2 (ja) * | 1991-01-23 | 2000-10-23 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
US6096389A (en) * | 1995-09-14 | 2000-08-01 | Canon Kabushiki Kaisha | Method and apparatus for forming a deposited film using a microwave CVD process |
US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
US6209480B1 (en) * | 1996-07-10 | 2001-04-03 | Mehrdad M. Moslehi | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US6083355A (en) * | 1997-07-14 | 2000-07-04 | The University Of Tennessee Research Corporation | Electrodes for plasma treater systems |
WO2001012873A1 (en) * | 1999-08-17 | 2001-02-22 | Tokyo Electron Limited | Pulsed plasma processing method and apparatus |
DE10060002B4 (de) * | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Vorrichtung zur Oberflächenbehandlung |
US6764658B2 (en) * | 2002-01-08 | 2004-07-20 | Wisconsin Alumni Research Foundation | Plasma generator |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
WO2004032214A1 (ja) * | 2002-10-07 | 2004-04-15 | Sekisui Chemical Co., Ltd. | プラズマ成膜装置 |
KR101100963B1 (ko) * | 2003-03-12 | 2011-12-29 | 도요 세이칸 가부시키가이샤 | 마이크로파 플라즈마 처리장치 및 플라즈마 처리용가스공급부재 |
WO2004099490A1 (en) * | 2003-05-05 | 2004-11-18 | Commonwealth Scientific And Industrial Research Organisation | Plasma treatment apparatus and method |
US20050103265A1 (en) * | 2003-11-19 | 2005-05-19 | Applied Materials, Inc., A Delaware Corporation | Gas distribution showerhead featuring exhaust apertures |
KR100558922B1 (ko) | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | 박막 증착장치 및 방법 |
US7968145B2 (en) * | 2005-04-26 | 2011-06-28 | First Solar, Inc. | System and method for depositing a material on a substrate |
US7413982B2 (en) | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
US20070281089A1 (en) | 2006-06-05 | 2007-12-06 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
US8187679B2 (en) * | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
US8043432B2 (en) | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US8287647B2 (en) | 2007-04-17 | 2012-10-16 | Lam Research Corporation | Apparatus and method for atomic layer deposition |
JP5202050B2 (ja) * | 2008-03-14 | 2013-06-05 | 東京エレクトロン株式会社 | シャワーヘッド及び基板処理装置 |
JP5179389B2 (ja) * | 2008-03-19 | 2013-04-10 | 東京エレクトロン株式会社 | シャワーヘッド及び基板処理装置 |
JP2010050046A (ja) * | 2008-08-25 | 2010-03-04 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
FI124414B (fi) * | 2010-04-30 | 2014-08-29 | Beneq Oy | Lähde ja järjestely substraatin käsittelemiseksi |
US9184028B2 (en) * | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
EP2557198A1 (en) * | 2011-08-10 | 2013-02-13 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
EP2765218A1 (en) * | 2013-02-07 | 2014-08-13 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
JP6320824B2 (ja) * | 2014-03-31 | 2018-05-09 | 株式会社東芝 | ガス供給管、およびガス処理装置 |
-
2010
- 2010-04-30 FI FI20105472A patent/FI124414B/fi active IP Right Grant
-
2011
- 2011-04-29 CN CN201180021683.3A patent/CN102869809B/zh active Active
- 2011-04-29 EA EA201291110A patent/EA027960B1/ru not_active IP Right Cessation
- 2011-04-29 EP EP11726460.6A patent/EP2563948B1/en active Active
- 2011-04-29 US US13/639,394 patent/US9394610B2/en active Active
- 2011-04-29 WO PCT/FI2011/050391 patent/WO2011135190A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP2563948B1 (en) | 2018-06-27 |
FI20105472A (fi) | 2011-10-31 |
US9394610B2 (en) | 2016-07-19 |
EA027960B1 (ru) | 2017-09-29 |
CN102869809B (zh) | 2015-06-03 |
WO2011135190A1 (en) | 2011-11-03 |
FI124414B (fi) | 2014-08-29 |
CN102869809A (zh) | 2013-01-09 |
EA201291110A1 (ru) | 2013-04-30 |
EP2563948A1 (en) | 2013-03-06 |
US20130047921A1 (en) | 2013-02-28 |
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