FI20070939A - Säteilyanturi menetelmä säteilyanturin valmistamiseksi ja anturin käyttö säteilyn mittaamiseksi - Google Patents

Säteilyanturi menetelmä säteilyanturin valmistamiseksi ja anturin käyttö säteilyn mittaamiseksi Download PDF

Info

Publication number
FI20070939A
FI20070939A FI20070939A FI20070939A FI20070939A FI 20070939 A FI20070939 A FI 20070939A FI 20070939 A FI20070939 A FI 20070939A FI 20070939 A FI20070939 A FI 20070939A FI 20070939 A FI20070939 A FI 20070939A
Authority
FI
Finland
Prior art keywords
radiation
sensor
manufacturing
measure
radiation sensor
Prior art date
Application number
FI20070939A
Other languages
English (en)
Swedish (sv)
Other versions
FI20070939A0 (fi
FI121828B (fi
Inventor
Francisco Garcia
Risto Orava
Manuel Lozano
Giulio Pellegrini
Original Assignee
Teknoflow Oy
Consejo Superior Investigacion
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknoflow Oy, Consejo Superior Investigacion filed Critical Teknoflow Oy
Priority to FI20070939A priority Critical patent/FI121828B/fi
Publication of FI20070939A0 publication Critical patent/FI20070939A0/fi
Priority to EP08858023A priority patent/EP2227828A2/en
Priority to EP16162571.0A priority patent/EP3139409A1/en
Priority to PCT/EP2008/066716 priority patent/WO2009071587A2/en
Publication of FI20070939A publication Critical patent/FI20070939A/fi
Priority to US12/794,627 priority patent/US8461541B2/en
Application granted granted Critical
Publication of FI121828B publication Critical patent/FI121828B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T3/00—Measuring neutron radiation
    • G01T3/08—Measuring neutron radiation with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035263—Doping superlattices, e.g. nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
FI20070939A 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen FI121828B (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20070939A FI121828B (fi) 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen
EP08858023A EP2227828A2 (en) 2007-12-04 2008-12-03 Back-thinned radiation detector with "3d" active region and corresponding methods of manufacturing and use
EP16162571.0A EP3139409A1 (en) 2007-12-04 2008-12-03 Radiation detector, method of manufacturing a radiation detector and use of the detector for measuring radiation
PCT/EP2008/066716 WO2009071587A2 (en) 2007-12-04 2008-12-03 Back-thinned radiation detector with '3d' active region and corresponding methods of manufacturing and use
US12/794,627 US8461541B2 (en) 2007-12-04 2010-06-04 Radiation detector, method of manufacturing a radiation detector and use of the detector for measuring radiation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20070939A FI121828B (fi) 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen
FI20070939 2007-12-04

Publications (3)

Publication Number Publication Date
FI20070939A0 FI20070939A0 (fi) 2007-12-04
FI20070939A true FI20070939A (fi) 2009-06-05
FI121828B FI121828B (fi) 2011-04-29

Family

ID=38951476

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20070939A FI121828B (fi) 2007-12-04 2007-12-04 Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen

Country Status (4)

Country Link
US (1) US8461541B2 (fi)
EP (2) EP2227828A2 (fi)
FI (1) FI121828B (fi)
WO (1) WO2009071587A2 (fi)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766392B2 (en) 2007-05-07 2014-07-01 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US8005326B2 (en) * 2008-07-10 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Optical clock signal distribution using through-silicon vias
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
EP2256810A1 (en) * 2009-05-29 2010-12-01 Fondazione Bruno Kessler Method for the production of a 3D solid-state radiation detector
US8263940B2 (en) 2009-10-26 2012-09-11 Finphys Oy Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus
GB2474720A (en) 2009-10-26 2011-04-27 Finphys Oy Neutron Detector
UA111585C2 (uk) * 2010-01-08 2016-05-25 Трай Альфа Енерджи, Інк. Перетворення високоенергетичних фотонів в електрику
US8822897B2 (en) 2010-03-19 2014-09-02 Invisage Technologies, Inc. Image sensors employing sensitized semiconductor diodes
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
GB201107076D0 (en) 2011-04-27 2011-06-08 Finphys Oy Neutron detector
US8798229B2 (en) * 2011-09-30 2014-08-05 General Electric Company Detector modules and methods of manufacturing
WO2013121078A1 (en) * 2012-02-15 2013-08-22 Hs Foils Oy Method and arrangement for manufacturing a radiation window
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US10054691B1 (en) 2013-03-01 2018-08-21 The United States of America as Represented by the Admin of National Aeronautics and Space Administration Fast, large area, wide band GAP UV photodetector for cherenkov light detection
US9739898B2 (en) 2014-03-26 2017-08-22 California Institute Of Technology Subnanosecond scintillation detector
US10078142B2 (en) 2014-03-26 2018-09-18 California Institute Of Technology Sensor integrated metal dielectric filters for solar-blind silicon ultraviolet detectors
WO2015191734A1 (en) 2014-06-10 2015-12-17 Edward Hartley Sargent Multi-terminal optoelectronic devices for light detection
US9754992B2 (en) 2015-01-21 2017-09-05 Terapede Systems Inc. Integrated scintillator grid with photodiodes
CN109155321A (zh) 2016-05-11 2019-01-04 G射线工业公司 用于粒子检测的单片硅像素检测器以及系统和方法
WO2017213622A1 (en) * 2016-06-06 2017-12-14 Terapede Systems Inc. Integrated scintillator grid with photodiodes
CN109863603B (zh) * 2016-10-20 2023-02-17 因维萨热技术公司 具有电子收集电极和空穴收集电极的图像传感器
GB201703785D0 (en) * 2017-03-09 2017-04-26 Univ Bristol Radiation detector
US10126437B1 (en) * 2017-05-15 2018-11-13 Prismatic Sensors Ab Detector for x-ray imaging
EP3658959A4 (en) * 2017-07-26 2020-12-23 Shenzhen Xpectvision Technology Co., Ltd. RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE
EP3444843B8 (en) * 2017-08-14 2021-03-24 ams International AG Assembly for detecting electromagnetic radiation and method of producing an assembly for detecting electromagnetic radiation
KR102583562B1 (ko) * 2017-12-27 2023-09-26 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 엑스레이 검출기
WO2020142975A1 (en) * 2019-01-10 2020-07-16 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor radiation detector
CN112083470B (zh) * 2020-09-02 2023-11-24 重庆中易智芯科技有限责任公司 一种阻态敏感CdZnTe辐射探测器及其制造方法
US11927616B2 (en) 2021-03-30 2024-03-12 International Business Machines Corporation Evaluation of wafer carcass alpha particle emission

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129380A (en) * 1980-03-13 1981-10-09 Fuji Electric Co Ltd Semiconductor radioactive rays detector
FR2656738B1 (fr) * 1989-12-29 1995-03-17 Telemecanique Procede pour fabriquer un dispositif semiconducteur, dispositif et composant semiconducteur obtenus par le procede.
FR2666453A1 (fr) * 1990-08-31 1992-03-06 Commissariat Energie Atomique Batterie de photopiles montees en serie.
FR2715250B1 (fr) 1994-01-19 1996-04-05 Commissariat Energie Atomique Dispositif tridimensionnel de détection de rayonnement et procédé de fabrication de ce dispositif.
US6259099B1 (en) * 1996-12-18 2001-07-10 Commissariat A L'energie Atomique Ultra-thin ionizing radiation detector and methods for making same
DE10127952A1 (de) * 2001-06-08 2002-12-19 Infineon Technologies Ag Laterale PIN-Diode und Verfahren zur Herstellung derselben
US6667528B2 (en) * 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
WO2005003816A2 (en) * 2003-07-01 2005-01-13 Bae Systems Plc A solid state neutron detector
US6943409B1 (en) * 2004-05-24 2005-09-13 International Business Machines Corporation Trench optical device
EP1833095B1 (en) * 2006-03-06 2018-08-01 ams AG Photo diode having reduced dark current

Also Published As

Publication number Publication date
WO2009071587A2 (en) 2009-06-11
FI20070939A0 (fi) 2007-12-04
WO2009071587A3 (en) 2009-09-17
US20110079728A1 (en) 2011-04-07
EP3139409A1 (en) 2017-03-08
US8461541B2 (en) 2013-06-11
FI121828B (fi) 2011-04-29
EP2227828A2 (en) 2010-09-15

Similar Documents

Publication Publication Date Title
FI20070939A (fi) Säteilyanturi menetelmä säteilyanturin valmistamiseksi ja anturin käyttö säteilyn mittaamiseksi
BRPI0907576A2 (pt) Método de perfilar um poço usando um material de absorção de nêutrons térmicos
FI20080236A0 (fi) Menetelmä ja järjestelmä tapahtumien havaitsemiseen
BRPI0916804A2 (pt) medição de elemento de utilidade
DK2264676T3 (da) Sensor
DK4282332T3 (da) Analytsensor
EP2257218A4 (en) MANAGING THE CALIBRATION OF AN ANALYTE DETECTOR
GB0724630D0 (en) Temperature sensor and method for measuring temperature
FR2939920B1 (fr) Capteur matriciel
FI20085665A0 (fi) Menetelmä ja laite etäisyyden mittaamiseen
FI20070584A (fi) Ohutparisto ja menetelmä ohutpariston valmistamiseksi
FR2948436B1 (fr) Capteur optoelectronique
FI20075390A (fi) Järjestely ja menetelmä joukkokorjuun mahdollistamiseksi
FI20060211A (fi) Uudenlainen antennirakenne ja menetelmä sen valmistamiseksi
DE112008003283A5 (de) Linearsensor
FI20085671A0 (fi) Menetelmä jäähdytyselementin valmistamiseksi ja jäähdytyselementti
FI20095880A0 (fi) Menetelmä sensorin valmistamiseksi ja sensori
DE112009001045A5 (de) Linearsensor
FI20095619A0 (fi) Järjestelmä ja menetelmä suhteellisen liikkeen mittaamiseksi
FI20041344A (fi) Anturi ja menetelmä komponenttiin kohdistuvan suureen mittaamiseksi
FI20106065A0 (fi) Menetelmä ja mitta-anturi lämpötilan mittaamiseksi
DE112009002067A5 (de) Sensor mit interner kalibrierstruktur
FI20070351A (fi) Menetelmä ja laitteisto anturamuotin muodostamiseksi
FI20085359A0 (fi) Optinen mittausanturi ja menetelmä fysikaalisen suureen määrittämiseksi
FI20085669A (fi) Menetelmä jäähdytyselementin valmistamiseksi ja jäähdytyselementti

Legal Events

Date Code Title Description
PC Transfer of assignment of patent

Owner name: FINPHYS OY

Free format text: FINPHYS OY

FG Patent granted

Ref document number: 121828

Country of ref document: FI