FI20055188A - Reaktori - Google Patents
Reaktori Download PDFInfo
- Publication number
- FI20055188A FI20055188A FI20055188A FI20055188A FI20055188A FI 20055188 A FI20055188 A FI 20055188A FI 20055188 A FI20055188 A FI 20055188A FI 20055188 A FI20055188 A FI 20055188A FI 20055188 A FI20055188 A FI 20055188A
- Authority
- FI
- Finland
- Prior art keywords
- reactor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20055188A FI119478B (fi) | 2005-04-22 | 2005-04-22 | Reaktori |
RU2007137545/02A RU2405063C2 (ru) | 2005-04-22 | 2006-04-21 | Реактор |
PCT/FI2006/050158 WO2006111617A1 (en) | 2005-04-22 | 2006-04-21 | Reactor |
KR1020077024244A KR20080000600A (ko) | 2005-04-22 | 2006-04-21 | 리액터 |
US11/918,137 US20090031947A1 (en) | 2005-04-22 | 2006-04-21 | Reactor |
EP06725933A EP1874979A4 (en) | 2005-04-22 | 2006-04-21 | REACTOR |
JP2008507107A JP2008537021A (ja) | 2005-04-22 | 2006-04-21 | 反応容器 |
CN2006800135426A CN101163818B (zh) | 2005-04-22 | 2006-04-21 | 反应器 |
JP2011258729A JP2012072501A (ja) | 2005-04-22 | 2011-11-28 | 反応容器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20055188 | 2005-04-22 | ||
FI20055188A FI119478B (fi) | 2005-04-22 | 2005-04-22 | Reaktori |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20055188A0 FI20055188A0 (fi) | 2005-04-22 |
FI20055188A true FI20055188A (fi) | 2006-10-23 |
FI119478B FI119478B (fi) | 2008-11-28 |
Family
ID=34508187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20055188A FI119478B (fi) | 2005-04-22 | 2005-04-22 | Reaktori |
Country Status (8)
Country | Link |
---|---|
US (1) | US20090031947A1 (fi) |
EP (1) | EP1874979A4 (fi) |
JP (2) | JP2008537021A (fi) |
KR (1) | KR20080000600A (fi) |
CN (1) | CN101163818B (fi) |
FI (1) | FI119478B (fi) |
RU (1) | RU2405063C2 (fi) |
WO (1) | WO2006111617A1 (fi) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI121750B (fi) * | 2005-11-17 | 2011-03-31 | Beneq Oy | ALD-reaktori |
FI20115073A0 (fi) * | 2011-01-26 | 2011-01-26 | Beneq Oy | Laitteisto, menetelmä ja reaktiokammio |
KR102265704B1 (ko) * | 2011-04-07 | 2021-06-16 | 피코순 오와이 | 플라즈마 소오스를 갖는 퇴적 반응기 |
FI127503B (fi) * | 2016-06-30 | 2018-07-31 | Beneq Oy | Menetelmä substraatin päällystämiseksi ja laite |
CN109536927B (zh) * | 2019-01-28 | 2023-08-01 | 南京爱通智能科技有限公司 | 一种适用于超大规模原子层沉积的给料系统 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1244733B (de) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern |
JPS5315466B2 (fi) * | 1973-04-28 | 1978-05-25 | ||
US4369031A (en) * | 1981-09-15 | 1983-01-18 | Thermco Products Corporation | Gas control system for chemical vapor deposition system |
US4582720A (en) | 1982-09-20 | 1986-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for forming non-single-crystal layer |
JPS5950435U (ja) * | 1982-09-27 | 1984-04-03 | 沖電気工業株式会社 | Cvd装置 |
GB2135254A (en) * | 1983-02-17 | 1984-08-30 | Leyland Vehicles | Vehicle suspensions |
US4573431A (en) * | 1983-11-16 | 1986-03-04 | Btu Engineering Corporation | Modular V-CVD diffusion furnace |
US4756272A (en) * | 1986-06-02 | 1988-07-12 | Motorola, Inc. | Multiple gas injection apparatus for LPCVD equipment |
US4854266A (en) | 1987-11-02 | 1989-08-08 | Btu Engineering Corporation | Cross-flow diffusion furnace |
JPH01259174A (ja) * | 1988-04-07 | 1989-10-16 | Fujitsu Ltd | Cvd装置の不要成長膜付着防止方法 |
KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
US5547706A (en) * | 1994-07-27 | 1996-08-20 | General Electric Company | Optical thin films and method for their production |
FI97730C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
JPH08306632A (ja) * | 1995-04-27 | 1996-11-22 | Shin Etsu Handotai Co Ltd | 気相エピタキシャル成長装置 |
JP3153138B2 (ja) * | 1996-12-10 | 2001-04-03 | 沖電気工業株式会社 | 半導体装置の製造方法 |
US6315512B1 (en) * | 1997-11-28 | 2001-11-13 | Mattson Technology, Inc. | Systems and methods for robotic transfer of workpieces between a storage area and a processing chamber |
US6200911B1 (en) * | 1998-04-21 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power |
US6080241A (en) * | 1998-09-02 | 2000-06-27 | Emcore Corporation | Chemical vapor deposition chamber having an adjustable flow flange |
JP4021125B2 (ja) * | 2000-06-02 | 2007-12-12 | 東京エレクトロン株式会社 | ウェハ移載装置の装置ユニット接続時に用いられるレールの真直性保持装置 |
US6730367B2 (en) * | 2002-03-05 | 2004-05-04 | Micron Technology, Inc. | Atomic layer deposition method with point of use generated reactive gas species |
US6893506B2 (en) * | 2002-03-11 | 2005-05-17 | Micron Technology, Inc. | Atomic layer deposition apparatus and method |
US7163586B2 (en) | 2003-11-12 | 2007-01-16 | Specialty Coating Systems, Inc. | Vapor deposition apparatus |
US7437944B2 (en) * | 2003-12-04 | 2008-10-21 | Applied Materials, Inc. | Method and apparatus for pressure and mix ratio control |
US7780787B2 (en) * | 2004-08-11 | 2010-08-24 | First Solar, Inc. | Apparatus and method for depositing a material on a substrate |
JP2006210727A (ja) * | 2005-01-28 | 2006-08-10 | Hitachi High-Technologies Corp | プラズマエッチング装置およびプラズマエッチング方法 |
-
2005
- 2005-04-22 FI FI20055188A patent/FI119478B/fi active IP Right Grant
-
2006
- 2006-04-21 JP JP2008507107A patent/JP2008537021A/ja not_active Withdrawn
- 2006-04-21 EP EP06725933A patent/EP1874979A4/en not_active Withdrawn
- 2006-04-21 WO PCT/FI2006/050158 patent/WO2006111617A1/en active Application Filing
- 2006-04-21 RU RU2007137545/02A patent/RU2405063C2/ru active
- 2006-04-21 US US11/918,137 patent/US20090031947A1/en not_active Abandoned
- 2006-04-21 KR KR1020077024244A patent/KR20080000600A/ko not_active Application Discontinuation
- 2006-04-21 CN CN2006800135426A patent/CN101163818B/zh active Active
-
2011
- 2011-11-28 JP JP2011258729A patent/JP2012072501A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2008537021A (ja) | 2008-09-11 |
EP1874979A4 (en) | 2008-11-05 |
CN101163818A (zh) | 2008-04-16 |
US20090031947A1 (en) | 2009-02-05 |
RU2007137545A (ru) | 2009-05-27 |
FI119478B (fi) | 2008-11-28 |
RU2405063C2 (ru) | 2010-11-27 |
FI20055188A0 (fi) | 2005-04-22 |
EP1874979A1 (en) | 2008-01-09 |
WO2006111617A1 (en) | 2006-10-26 |
WO2006111617A8 (en) | 2006-12-28 |
CN101163818B (zh) | 2010-11-03 |
KR20080000600A (ko) | 2008-01-02 |
JP2012072501A (ja) | 2012-04-12 |
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Legal Events
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FG | Patent granted |
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