FI20020133A0 - Menetelmõ optisen sõteilyn tuottamiseksi, ja optisen sõteilyn lõhde - Google Patents

Menetelmõ optisen sõteilyn tuottamiseksi, ja optisen sõteilyn lõhde

Info

Publication number
FI20020133A0
FI20020133A0 FI20020133A FI20020133A FI20020133A0 FI 20020133 A0 FI20020133 A0 FI 20020133A0 FI 20020133 A FI20020133 A FI 20020133A FI 20020133 A FI20020133 A FI 20020133A FI 20020133 A0 FI20020133 A0 FI 20020133A0
Authority
FI
Finland
Prior art keywords
optical irradiation
methods
fiber
producing
producing optical
Prior art date
Application number
FI20020133A
Other languages
English (en)
Swedish (sv)
Inventor
Sergey Vainshtein
Juha Tapio Kostamovaara
Larisa Shestak
Michail Sverdlov
Original Assignee
Juha Tapio Kostamovaara
Sergey Vainshtein
Larisa Shestak
Michail Sverdlov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Juha Tapio Kostamovaara, Sergey Vainshtein, Larisa Shestak, Michail Sverdlov filed Critical Juha Tapio Kostamovaara
Priority to FI20020133A priority Critical patent/FI20020133A0/fi
Publication of FI20020133A0 publication Critical patent/FI20020133A0/fi
Priority to EP03700325A priority patent/EP1476925A1/en
Priority to PCT/FI2003/000057 priority patent/WO2003063311A1/en
Priority to RU2004125651/28A priority patent/RU2306650C2/ru
Priority to US10/350,068 priority patent/US6870194B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
FI20020133A 2002-01-24 2002-01-24 Menetelmõ optisen sõteilyn tuottamiseksi, ja optisen sõteilyn lõhde FI20020133A0 (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20020133A FI20020133A0 (fi) 2002-01-24 2002-01-24 Menetelmõ optisen sõteilyn tuottamiseksi, ja optisen sõteilyn lõhde
EP03700325A EP1476925A1 (en) 2002-01-24 2003-01-23 Method of generating optical radiation, and optical radiation source
PCT/FI2003/000057 WO2003063311A1 (en) 2002-01-24 2003-01-23 Method of generating optical radiation, and optical radiation source
RU2004125651/28A RU2306650C2 (ru) 2002-01-24 2003-01-23 Способ генерации оптического излучения и источник оптического излучения
US10/350,068 US6870194B2 (en) 2002-01-24 2003-01-24 Method of generating optical radiation, and optical radiation source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20020133A FI20020133A0 (fi) 2002-01-24 2002-01-24 Menetelmõ optisen sõteilyn tuottamiseksi, ja optisen sõteilyn lõhde

Publications (1)

Publication Number Publication Date
FI20020133A0 true FI20020133A0 (fi) 2002-01-24

Family

ID=8562903

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20020133A FI20020133A0 (fi) 2002-01-24 2002-01-24 Menetelmõ optisen sõteilyn tuottamiseksi, ja optisen sõteilyn lõhde

Country Status (5)

Country Link
US (1) US6870194B2 (fi)
EP (1) EP1476925A1 (fi)
FI (1) FI20020133A0 (fi)
RU (1) RU2306650C2 (fi)
WO (1) WO2003063311A1 (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20085512A0 (fi) * 2008-05-28 2008-05-28 Oulun Yliopisto Puolijohdelaser
KR101103963B1 (ko) * 2009-12-01 2012-01-13 엘지이노텍 주식회사 발광소자 및 그 제조방법
RU2494533C1 (ru) * 2012-11-08 2013-09-27 Открытое акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" Способ оптической накачки лазера
RU2494532C1 (ru) * 2012-11-08 2013-09-27 Открытое акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" Генератор импульсов тока

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4806997A (en) * 1985-06-14 1989-02-21 AT&T Laboratories American Telephone and Telegraph Company Double heterostructure optoelectronic switch
US5010374A (en) * 1990-06-05 1991-04-23 At&T Bell Laboratories Quantum well laser utilizing an inversion layer
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
DE19703612A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Halbleiterlaser-Bauelement

Also Published As

Publication number Publication date
RU2004125651A (ru) 2005-04-10
US6870194B2 (en) 2005-03-22
EP1476925A1 (en) 2004-11-17
US20040012012A1 (en) 2004-01-22
RU2306650C2 (ru) 2007-09-20
WO2003063311A1 (en) 2003-07-31

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