ES545887A0 - Un dispositivo fotosensible mejorado - Google Patents

Un dispositivo fotosensible mejorado

Info

Publication number
ES545887A0
ES545887A0 ES545887A ES545887A ES545887A0 ES 545887 A0 ES545887 A0 ES 545887A0 ES 545887 A ES545887 A ES 545887A ES 545887 A ES545887 A ES 545887A ES 545887 A0 ES545887 A0 ES 545887A0
Authority
ES
Spain
Prior art keywords
photosensitive device
improved photosensitive
improved
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES545887A
Other languages
English (en)
Other versions
ES8700503A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8700503A1 publication Critical patent/ES8700503A1/es
Publication of ES545887A0 publication Critical patent/ES545887A0/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10F77/1668—Amorphous semiconductors including only Group IV materials presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging
ES545887A 1984-08-06 1985-08-05 Un dispositivo fotosensible mejorado Expired ES8700503A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/637,984 US4555586A (en) 1984-08-06 1984-08-06 Photovoltiac device having long term energy conversion stability and method of producing same

Publications (2)

Publication Number Publication Date
ES8700503A1 ES8700503A1 (es) 1986-10-01
ES545887A0 true ES545887A0 (es) 1986-10-01

Family

ID=24558176

Family Applications (1)

Application Number Title Priority Date Filing Date
ES545887A Expired ES8700503A1 (es) 1984-08-06 1985-08-05 Un dispositivo fotosensible mejorado

Country Status (9)

Country Link
US (1) US4555586A (es)
EP (1) EP0171274B1 (es)
JP (1) JPS6143486A (es)
AU (1) AU4566385A (es)
BR (1) BR8503628A (es)
CA (1) CA1226657A (es)
DE (1) DE3581012D1 (es)
ES (1) ES8700503A1 (es)
ZA (1) ZA855545B (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
JPH01100975A (ja) * 1987-10-14 1989-04-19 Sanyo Electric Co Ltd 光起電力装置
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
JP3315575B2 (ja) * 1996-02-07 2002-08-19 キヤノン株式会社 太陽光エネルギー変換装置、建築物、及び光電変換素子の温度制御方法
US6806415B2 (en) * 2000-11-10 2004-10-19 Canon Kabushiki Kaisha Method for controlling a solar power generation system having a cooling mechanism
KR100539639B1 (ko) * 2003-07-22 2005-12-29 전자부품연구원 태양전지 및 그의 제조방법
NZ546718A (en) * 2006-04-19 2008-08-29 Waikatolink Ltd Energy conversion system
US7456042B2 (en) * 2006-06-04 2008-11-25 Robert Bosch Gmbh Microelectromechanical systems having stored charge and methods for fabricating and using same
KR100905132B1 (ko) 2007-08-21 2009-06-29 강효신 젤 로션 제조 방법
WO2009043662A2 (en) * 2007-10-01 2009-04-09 Suinno Oy Thermodynamically shielded solar cell
US9634165B2 (en) * 2009-11-02 2017-04-25 International Business Machines Corporation Regeneration method for restoring photovoltaic cell efficiency
CN101924166B (zh) * 2010-08-04 2013-03-06 中国科学院光电技术研究所 一种太阳能电池表面减反射结构的制作系统及制作方法
KR20160068338A (ko) * 2014-12-05 2016-06-15 현대자동차주식회사 차량용 차체 일체형 태양전지
CN115207219B (zh) * 2021-04-13 2023-10-03 宁德时代新能源科技股份有限公司 钙钛矿太阳能电池及其制备方法、用电设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3597281A (en) * 1969-05-02 1971-08-03 Nasa Recovery of radiation damaged solar cells through thermanl annealing
JPS5944645B2 (ja) * 1976-09-21 1984-10-31 日本電気株式会社 太陽電池電源装置
US4371738A (en) * 1981-05-04 1983-02-01 Rca Corporation Method of restoring degraded solar cells
JPS57187972A (en) * 1981-05-15 1982-11-18 Agency Of Ind Science & Technol Manufacture of solar cell
US4409424A (en) * 1982-06-21 1983-10-11 Genevieve Devaud Compensated amorphous silicon solar cell
JPS5954275A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
IN172491B (es) * 1982-12-20 1993-09-04 Energy Conversion Devices Inc

Also Published As

Publication number Publication date
ES8700503A1 (es) 1986-10-01
DE3581012D1 (de) 1991-02-07
EP0171274B1 (en) 1991-01-02
EP0171274A3 (en) 1987-04-15
BR8503628A (pt) 1986-04-29
AU4566385A (en) 1986-02-13
CA1226657A (en) 1987-09-08
ZA855545B (en) 1986-03-26
JPS6143486A (ja) 1986-03-03
US4555586A (en) 1985-11-26
EP0171274A2 (en) 1986-02-12

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