ES508968A0 - "dispositivo transistor perfeccionado". - Google Patents

"dispositivo transistor perfeccionado".

Info

Publication number
ES508968A0
ES508968A0 ES508968A ES508968A ES508968A0 ES 508968 A0 ES508968 A0 ES 508968A0 ES 508968 A ES508968 A ES 508968A ES 508968 A ES508968 A ES 508968A ES 508968 A0 ES508968 A0 ES 508968A0
Authority
ES
Spain
Prior art keywords
perfected
transistor device
transistor
perfected transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES508968A
Other languages
English (en)
Other versions
ES8303820A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES508968A0 publication Critical patent/ES508968A0/es
Publication of ES8303820A1 publication Critical patent/ES8303820A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Hall/Mr Elements (AREA)
ES508968A 1981-04-13 1982-01-22 "dispositivo transistor perfeccionado". Expired ES8303820A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25312881A 1981-04-13 1981-04-13

Publications (2)

Publication Number Publication Date
ES508968A0 true ES508968A0 (es) 1983-02-01
ES8303820A1 ES8303820A1 (es) 1983-02-01

Family

ID=22958987

Family Applications (1)

Application Number Title Priority Date Filing Date
ES508968A Expired ES8303820A1 (es) 1981-04-13 1982-01-22 "dispositivo transistor perfeccionado".

Country Status (7)

Country Link
EP (1) EP0063209B1 (es)
JP (1) JPS57177573A (es)
AU (1) AU547478B2 (es)
BR (1) BR8202017A (es)
CA (1) CA1182585A (es)
DE (1) DE3261792D1 (es)
ES (1) ES8303820A1 (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58220474A (ja) * 1982-06-15 1983-12-22 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応ダイオ−ド
JPS59222969A (ja) * 1983-05-27 1984-12-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応トランジスタ
US5390061A (en) 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
US5591996A (en) * 1995-03-24 1997-01-07 Analog Devices, Inc. Recirculating charge transfer magnetic field sensor
US5872384A (en) * 1997-01-17 1999-02-16 Lucent Technologies Inc. Component arrangement having magnetic field controlled transistor
JP4287905B2 (ja) * 2003-07-31 2009-07-01 光照 木村 半導体磁気センサとこれを用いた磁気計測装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132553B2 (es) * 1973-05-19 1976-09-13
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor

Also Published As

Publication number Publication date
JPH0351116B2 (es) 1991-08-05
AU8178082A (en) 1982-10-21
AU547478B2 (en) 1985-10-24
CA1182585A (en) 1985-02-12
EP0063209B1 (en) 1985-01-09
DE3261792D1 (en) 1985-02-21
BR8202017A (pt) 1983-03-15
ES8303820A1 (es) 1983-02-01
EP0063209A1 (en) 1982-10-27
JPS57177573A (en) 1982-11-01

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19970401