ES508366A0 - "procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio". - Google Patents

"procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio".

Info

Publication number
ES508366A0
ES508366A0 ES508366A ES508366A ES508366A0 ES 508366 A0 ES508366 A0 ES 508366A0 ES 508366 A ES508366 A ES 508366A ES 508366 A ES508366 A ES 508366A ES 508366 A0 ES508366 A0 ES 508366A0
Authority
ES
Spain
Prior art keywords
transpositions
polygons
bands
stretch
procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES508366A
Other languages
English (en)
Other versions
ES8302807A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heliotronic GmbH
Original Assignee
Heliotronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliotronic GmbH filed Critical Heliotronic GmbH
Publication of ES508366A0 publication Critical patent/ES508366A0/es
Publication of ES8302807A1 publication Critical patent/ES8302807A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
ES508366A 1980-12-29 1981-12-28 "procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio". Expired ES8302807A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803049376 DE3049376A1 (de) 1980-12-29 1980-12-29 Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze

Publications (2)

Publication Number Publication Date
ES508366A0 true ES508366A0 (es) 1982-12-01
ES8302807A1 ES8302807A1 (es) 1982-12-01

Family

ID=6120484

Family Applications (1)

Application Number Title Priority Date Filing Date
ES508366A Expired ES8302807A1 (es) 1980-12-29 1981-12-28 "procedimiento para la produccion de transposiciones pn verticales en el estirado de bandas, poligonos o tubos de silicio".

Country Status (7)

Country Link
US (1) US4428783A (es)
EP (1) EP0055372B1 (es)
JP (1) JPS5945634B2 (es)
AU (1) AU543147B2 (es)
DE (2) DE3049376A1 (es)
ES (1) ES8302807A1 (es)
ZA (1) ZA818929B (es)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3231268A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3518829A1 (de) * 1985-05-24 1986-11-27 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen
EP0235467B1 (en) * 1986-02-24 1990-05-09 Shimadzu Corporation Rotary fluid energy converter
JPS6424089A (en) * 1987-07-21 1989-01-26 Shinetsu Handotai Kk Device for adjusting initial position of melt surface
US4927489A (en) * 1988-06-02 1990-05-22 Westinghouse Electric Corp. Method for doping a melt
US5106763A (en) * 1988-11-15 1992-04-21 Mobil Solar Energy Corporation Method of fabricating solar cells
US5156978A (en) * 1988-11-15 1992-10-20 Mobil Solar Energy Corporation Method of fabricating solar cells
US4997628A (en) * 1989-08-24 1991-03-05 Westinghouse Electric Corp. Web growth configuration for higher productivity and 100% feed rate capability at wide widths
JP2804455B2 (ja) * 1995-03-24 1998-09-24 科学技術振興事業団 温度変動を制御したＳｉ単結晶の育成方法
JP2804456B2 (ja) * 1995-03-24 1998-09-24 科学技術振興事業団 半径方向に関する不純物濃度分布が均一なＳｉ単結晶の育成方法
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
KR19990063990A (ko) * 1995-10-05 1999-07-26 로시 리차드 부분적으로 깊게 확산된 에미터가 있는 자가조정식(salde) 태양 전지 및 그 제조 방법
JP4607307B2 (ja) * 2000-09-28 2011-01-05 信越半導体株式会社 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
JP4723071B2 (ja) * 2000-10-24 2011-07-13 信越半導体株式会社 シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
US8064071B2 (en) * 2008-03-14 2011-11-22 Varian Semiconductor Equipment Associates, Inc. Floating sheet measurement apparatus and method
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US7816153B2 (en) * 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
WO2009152368A1 (en) 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Application specific implant system and method for use in solar cell fabrications
US8545624B2 (en) * 2008-06-20 2013-10-01 Varian Semiconductor Equipment Associates, Inc. Method for continuous formation of a purified sheet from a melt
US9567691B2 (en) 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
US8475591B2 (en) * 2008-08-15 2013-07-02 Varian Semiconductor Equipment Associates, Inc. Method of controlling a thickness of a sheet formed from a melt
US7998224B2 (en) 2008-10-21 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Removal of a sheet from a production apparatus
JP2012521642A (ja) * 2009-03-20 2012-09-13 インテバック・インコーポレイテッド 太陽電池及びその製造方法
US8790460B2 (en) * 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
FR2994982B1 (fr) 2012-09-04 2016-01-08 Commissariat Energie Atomique Procede de fabrication d'une plaquette en silicium monolithique a multi-jonctions verticales.
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
KR102514915B1 (ko) 2018-10-12 2023-03-27 글로벌웨이퍼스 씨오., 엘티디. 잉곳 품질을 향상시키기 위한 실리콘 용융물에서의 도펀트 농도 제어
SG11202111451WA (en) 2019-04-18 2021-11-29 Globalwafers Co Ltd Methods for growing a single crystal silicon ingot using continuous czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
CN112195515B (zh) * 2020-09-29 2022-03-01 晶科能源股份有限公司 硅晶体及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1023146B (de) * 1953-09-30 1958-01-23 Gen Electric Verfahren zur Herstellung von Halbleitern mit p-n-Schicht und/oder von n-p-n-Transistoren
DE941743C (de) * 1954-03-20 1956-04-19 Licentia Gmbh Elektrisch unsymmetrisch leitendes System, insbesondere zur Verwendung als Hochspannungsgleichrichter und Verfahren zu seiner Herstellung
US2999776A (en) 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
US2950219A (en) 1955-02-23 1960-08-23 Rauland Corp Method of manufacturing semiconductor crystals
US2822308A (en) 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
DE1052571B (de) * 1955-03-29 1959-03-12 Gen Electric Halbleiter mit pn-UEbergang und Verfahren zu seiner Herstellung
US2852420A (en) 1956-06-28 1958-09-16 Rauland Corp Method of manufacturing semiconductor crystals
US2879189A (en) 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
BE567569A (es) 1957-06-25 1900-01-01
GB916385A (en) * 1958-05-27 1963-01-23 Philips Electrical Ind Ltd Improvements in or relating to methods of producing rods of semi-conductive material
US3082130A (en) 1958-10-30 1963-03-19 Texas Instruments Inc Compensated grown junction transistor
NL262176A (es) 1960-03-11 1900-01-01
US3192082A (en) 1962-10-23 1965-06-29 Hitachi Ltd Process for the production of npn or pnp junction
FR1393063A (fr) * 1963-05-13 1965-03-19 Kokusai Electric Co Ltd Perfectionnement au procédé de production de monocristaux par tirage
US3969746A (en) 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US4155781A (en) 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4359487A (en) 1980-07-11 1982-11-16 Exxon Research And Engineering Co. Method for applying an anti-reflection coating to a solar cell

Also Published As

Publication number Publication date
AU7818581A (en) 1982-07-08
EP0055372A1 (de) 1982-07-07
ZA818929B (en) 1982-11-24
EP0055372B1 (de) 1985-09-04
DE3172150D1 (en) 1985-10-10
AU543147B2 (en) 1985-04-04
JPS57118089A (en) 1982-07-22
ES8302807A1 (es) 1982-12-01
JPS5945634B2 (ja) 1984-11-07
US4428783A (en) 1984-01-31
DE3049376A1 (de) 1982-07-29

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