ES484359A1 - Una pila fotovoltaica mejorada - Google Patents

Una pila fotovoltaica mejorada

Info

Publication number
ES484359A1
ES484359A1 ES484359A ES484359A ES484359A1 ES 484359 A1 ES484359 A1 ES 484359A1 ES 484359 A ES484359 A ES 484359A ES 484359 A ES484359 A ES 484359A ES 484359 A1 ES484359 A1 ES 484359A1
Authority
ES
Spain
Prior art keywords
absorber
generator
zinc phosphide
photovoltaic cells
cells employing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES484359A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Delaware
Original Assignee
University of Delaware
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Delaware filed Critical University of Delaware
Publication of ES484359A1 publication Critical patent/ES484359A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Una pila fotovoltaica mejorada del tipo que consiste como componente sucesivos en la trayectoria eléctrica a través del dispositivo, un primer medio de contacto eléctrico, un absorbedor-generador en el contacto eléctrico óhmico con el primer medio de contacto; un colector para rectificar el contacto eléctrico con el absorbedor -generador y para formar una junta con el mismo, y un medio para poner en contacto eléctricamente el colector, comprendiendo la mejora que el absorbedor-generador consiste de fosfuro de zinc.
ES484359A 1978-09-22 1979-09-21 Una pila fotovoltaica mejorada Expired ES484359A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/944,971 US4477688A (en) 1978-09-22 1978-09-22 Photovoltaic cells employing zinc phosphide

Publications (1)

Publication Number Publication Date
ES484359A1 true ES484359A1 (es) 1980-04-16

Family

ID=25482398

Family Applications (1)

Application Number Title Priority Date Filing Date
ES484359A Expired ES484359A1 (es) 1978-09-22 1979-09-21 Una pila fotovoltaica mejorada

Country Status (8)

Country Link
US (1) US4477688A (es)
EP (1) EP0009401A1 (es)
JP (1) JPS5550584A (es)
BR (1) BR7906007A (es)
CA (1) CA1142632A (es)
ES (1) ES484359A1 (es)
IL (1) IL58272A0 (es)
ZA (1) ZA794966B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342879A (en) * 1980-10-24 1982-08-03 The University Of Delaware Thin film photovoltaic device
JPS59190979U (ja) * 1983-06-03 1984-12-18 大平洋機工株式会社 往復動複列シリンダ型容積ポンプの吐出弁装置
US6541695B1 (en) * 1992-09-21 2003-04-01 Thomas Mowles High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production
KR100475414B1 (ko) * 2002-03-27 2005-03-10 김영창 산화아연 박막상에서의 피-엔 접합 형성방법 및 피-엔접합 박막
US7303632B2 (en) * 2004-05-26 2007-12-04 Cree, Inc. Vapor assisted growth of gallium nitride
US20060070653A1 (en) * 2004-10-04 2006-04-06 Palo Alto Research Center Incorporated Nanostructured composite photovoltaic cell
US7763794B2 (en) * 2004-12-01 2010-07-27 Palo Alto Research Center Incorporated Heterojunction photovoltaic cell
US20060130890A1 (en) * 2004-12-20 2006-06-22 Palo Alto Research Center Incorporated. Heterojunction photovoltaic cell
KR101503557B1 (ko) * 2007-09-25 2015-03-17 퍼스트 솔라, 인코포레이티드 계면 층을 포함한 광기전 장치
JP2013528956A (ja) * 2010-06-16 2013-07-11 ダウ グローバル テクノロジーズ エルエルシー 光電池デバイスにおける使用に適する改良されたｉｉｂ／ｖａ族半導体
JP5649435B2 (ja) * 2010-12-17 2015-01-07 株式会社フジクラ 色素増感太陽電池
US9034685B2 (en) 2011-02-11 2015-05-19 Dow Global Technologies Llc Methodology for forming pnictide compositions suitable for use in microelectronic devices
US20160071994A1 (en) * 2012-01-31 2016-03-10 Dow Global Technologies Llc Method of making photovoltaic devices with reduced conduction band offset between pnictide absorber films and emitter films
WO2013116323A2 (en) 2012-01-31 2013-08-08 Dow Global Technologies Llc Method of making photovoltaic devices incorporating improved pnictide semiconductor films
ES2836852T3 (es) * 2013-11-04 2021-06-28 Columbus Photovoltaics LLC Células fotovoltaicas
CN114538397A (zh) * 2022-03-11 2022-05-27 先导薄膜材料（广东）有限公司 一种磷化镉的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368125A (en) * 1965-08-25 1968-02-06 Rca Corp Semiconductor gallium arsenide with germanium connecting layer
JPS50153885A (es) * 1974-05-31 1975-12-11

Also Published As

Publication number Publication date
US4477688A (en) 1984-10-16
JPS5550584A (en) 1980-04-12
EP0009401A1 (en) 1980-04-02
ZA794966B (en) 1980-11-26
CA1142632A (en) 1983-03-08
IL58272A0 (en) 1979-12-30
BR7906007A (pt) 1980-07-08

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