ES482395A1 - Transistor con tension de avalancha mandada - Google Patents

Transistor con tension de avalancha mandada

Info

Publication number
ES482395A1
ES482395A1 ES482395A ES482395A ES482395A1 ES 482395 A1 ES482395 A1 ES 482395A1 ES 482395 A ES482395 A ES 482395A ES 482395 A ES482395 A ES 482395A ES 482395 A1 ES482395 A1 ES 482395A1
Authority
ES
Spain
Prior art keywords
magnetic
new
avalanche
devices
avalanche voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES482395A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES482395A1 publication Critical patent/ES482395A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

Transistor con tensión de avalancha mandada, siendo mantenido el modo bruscamente conductor de generación de corriente de avalancha estable a poca impedancia, estando caracterizado este transistor porque comprende: un cuerpo de una materia semiconductora de un primer tipo de portadores mayoritarios; al menos un emisor de una materia semiconductora de un segundo tipo de portadores mayoritarios, opuesto al del cuerpo, un primer contacto eléctricamente conductor dispuesto sobre el emisor, al menos un colector de una materia semiconductora del tipo de portadores mayoritarios opuesto al del cuerpo, un segundo contacto eléctricamente conductor dispuesto sobre el colector, medios de mando del rendimiento de inyección, medios de mando del rendimiento de transporte y medios que favorecen la ionización por impacto.
ES482395A 1978-07-13 1979-07-11 Transistor con tension de avalancha mandada Expired ES482395A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/924,489 US4276555A (en) 1978-07-13 1978-07-13 Controlled avalanche voltage transistor and magnetic sensor

Publications (1)

Publication Number Publication Date
ES482395A1 true ES482395A1 (es) 1980-02-16

Family

ID=25450264

Family Applications (1)

Application Number Title Priority Date Filing Date
ES482395A Expired ES482395A1 (es) 1978-07-13 1979-07-11 Transistor con tension de avalancha mandada

Country Status (11)

Country Link
US (1) US4276555A (es)
EP (1) EP0006983B1 (es)
JP (1) JPS5515298A (es)
AU (1) AU526203B2 (es)
BR (1) BR7904454A (es)
CA (1) CA1136772A (es)
DE (1) DE2960810D1 (es)
ES (1) ES482395A1 (es)
IL (1) IL57544A (es)
IT (1) IT1164503B (es)
ZA (1) ZA792857B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
US4288708A (en) * 1980-05-01 1981-09-08 International Business Machines Corp. Differentially modulated avalanche area magnetically sensitive transistor
US4654684A (en) * 1981-04-13 1987-03-31 International Business Machines Corp. Magnetically sensitive transistors utilizing Lorentz field potential modultion of carrier injection
ES8303820A1 (es) * 1981-04-13 1983-02-01 Ibm "dispositivo transistor perfeccionado".
JPS58220474A (ja) * 1982-06-15 1983-12-22 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応ダイオ−ド
JPS59222969A (ja) * 1983-05-27 1984-12-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応トランジスタ
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
US6232822B1 (en) * 1988-01-08 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
JP4543142B2 (ja) * 2002-03-01 2010-09-15 独立行政法人産業技術総合研究所 電子雪崩効果による抵抗変化を磁場によって制御した素子及びそれを用いた磁気感応装置
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
KR100590211B1 (ko) * 2002-11-21 2006-06-15 가부시키가이샤 덴소 자기 임피던스 소자, 그를 이용한 센서 장치 및 그 제조방법
US8639065B2 (en) * 2010-06-18 2014-01-28 Kotura, Inc. System having avalanche effect light sensor with enhanced sensitivity
EP2736080B1 (en) * 2011-08-22 2017-02-01 Japan Science and Technology Agency Spin rectifying device, spin transistor, and spin rectifying method
EP3194991A1 (en) * 2014-09-05 2017-07-26 Fondazione Bruno Kessler Hall effect magnetic sensor of the improved type and matrix comprising a plurality of said hall effect magnetic sensors.
CN111881635B (zh) * 2020-06-23 2024-04-05 西安理工大学 一种基于Mextram模型RF雪崩效应建模方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2887423A (en) * 1956-06-18 1959-05-19 Beale Julian Robert Anthony Semi-conductor device
US3140438A (en) * 1959-05-08 1964-07-07 Clevite Corp Voltage regulating semiconductor device
US3196329A (en) * 1963-03-08 1965-07-20 Texas Instruments Inc Symmetrical switching diode
US3829889A (en) * 1963-12-16 1974-08-13 Signetics Corp Semiconductor structure
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3714523A (en) * 1971-03-30 1973-01-30 Texas Instruments Inc Magnetic field sensor
US3714559A (en) * 1971-08-10 1973-01-30 Texas Instruments Inc Method of measuring magnetic fields utilizing a three dram igfet with particular bias
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
US3990091A (en) * 1973-04-25 1976-11-02 Westinghouse Electric Corporation Low forward voltage drop thyristor
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS52115671A (en) * 1977-01-21 1977-09-28 Agency Of Ind Science & Technol Multi-terminal type semiconductor element

Also Published As

Publication number Publication date
US4276555A (en) 1981-06-30
BR7904454A (pt) 1980-04-08
JPS5515298A (en) 1980-02-02
JPH0126181B2 (es) 1989-05-22
DE2960810D1 (en) 1981-12-03
IL57544A0 (en) 1979-10-31
EP0006983B1 (fr) 1981-09-16
EP0006983A1 (fr) 1980-01-23
IT7924143A0 (it) 1979-07-06
AU526203B2 (en) 1982-12-23
IL57544A (en) 1981-09-13
IT1164503B (it) 1987-04-15
AU4868379A (en) 1980-01-17
CA1136772A (en) 1982-11-30
ZA792857B (en) 1981-01-28

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