ES450690A1 - Dispositivo semiconductor encapsulado y pasivado. - Google Patents

Dispositivo semiconductor encapsulado y pasivado.

Info

Publication number
ES450690A1
ES450690A1 ES450690A ES450690A ES450690A1 ES 450690 A1 ES450690 A1 ES 450690A1 ES 450690 A ES450690 A ES 450690A ES 450690 A ES450690 A ES 450690A ES 450690 A1 ES450690 A1 ES 450690A1
Authority
ES
Spain
Prior art keywords
passivated
semiconductor
encapsulated
conductive
making same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES450690A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24420755&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES450690(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of ES450690A1 publication Critical patent/ES450690A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
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    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01039—Yttrium [Y]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
ES450690A 1975-08-14 1976-08-13 Dispositivo semiconductor encapsulado y pasivado. Expired ES450690A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/604,722 US3996602A (en) 1975-08-14 1975-08-14 Passivated and encapsulated semiconductors and method of making same

Publications (1)

Publication Number Publication Date
ES450690A1 true ES450690A1 (es) 1977-12-01

Family

ID=24420755

Family Applications (1)

Application Number Title Priority Date Filing Date
ES450690A Expired ES450690A1 (es) 1975-08-14 1976-08-13 Dispositivo semiconductor encapsulado y pasivado.

Country Status (12)

Country Link
US (1) US3996602A (es)
JP (1) JPS5237772A (es)
BR (1) BR7605354A (es)
CA (1) CA1057420A (es)
DE (1) DE2636580A1 (es)
ES (1) ES450690A1 (es)
FR (1) FR2321192A1 (es)
GB (1) GB1510294A (es)
IE (1) IE44200B1 (es)
IT (1) IT1062666B (es)
NL (1) NL7609034A (es)
SE (1) SE7608988L (es)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187599A (en) * 1975-04-14 1980-02-12 Motorola, Inc. Semiconductor device having a tin metallization system and package containing same
US4198444A (en) * 1975-08-04 1980-04-15 General Electric Company Method for providing substantially hermetic sealing means for electronic components
JPS531469A (en) * 1976-06-26 1978-01-09 Hitachi Ltd Glass seal type semiconductor device
JPS5819125B2 (ja) * 1976-08-11 1983-04-16 株式会社日立製作所 半導体装置の製造方法
US4161746A (en) * 1978-03-28 1979-07-17 Westinghouse Electric Corp. Glass sealed diode
GB2031223A (en) * 1978-09-22 1980-04-16 Gen Instrument Corp Method for bonding a refractory metal contact member to a semiconductor body
US4571093A (en) * 1983-11-04 1986-02-18 Burroughs Corporation Method of testing plastic-packaged semiconductor devices
US4564885A (en) * 1984-09-10 1986-01-14 General Instrument Corporation Rectifier with slug construction and mold for fabricating same
USRE32829E (en) * 1984-09-10 1989-01-10 General Instrument Corp. Rectifier with slug construction and mold for fabricating same
NL8503023A (nl) * 1985-11-05 1987-06-01 Philips Nv Diode en metalen stud daarvoor.
US4745455A (en) * 1986-05-16 1988-05-17 General Electric Company Silicon packages for power semiconductor devices
US4888634A (en) * 1987-07-24 1989-12-19 Linear Technology Corporation High thermal resistance bonding material and semiconductor structures using same
US4987476A (en) * 1988-02-01 1991-01-22 General Instrument Corporation Brazed glass pre-passivated chip rectifier
US5151118A (en) * 1988-07-08 1992-09-29 Kabushiki Kaisha Goto Seisakusho Method for producing a package-type semiconductor assembly
US5008735A (en) * 1989-12-07 1991-04-16 General Instrument Corporation Packaged diode for high temperature operation
US5304429A (en) * 1992-03-24 1994-04-19 General Instrument Corporation Semiconductor devices having copper terminal leads
US5439849A (en) * 1994-02-02 1995-08-08 At&T Corp. Encapsulation techniques which include forming a thin glass layer onto a polymer layer
US6099783A (en) * 1995-06-06 2000-08-08 Board Of Trustees Operating Michigan State University Photopolymerizable compositions for encapsulating microelectronic devices
US5751061A (en) * 1995-12-18 1998-05-12 Motorola, Inc. Semiconductor diode device with non-planar heatsink and method of manufacture
US6111316A (en) * 1997-08-29 2000-08-29 Motorola, Inc. Electronic component encapsulated in a glass tube
DE102007041229A1 (de) * 2007-08-31 2009-03-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schaltungsanordnung und ein Verfahren zum Verkapseln derselben
WO2019027893A1 (en) 2017-07-31 2019-02-07 Corning Incorporated LAMINATE ARTICLE HAVING A CENTRAL NON-GLASS PART AND A GLASS ENVELOPE AND ASSOCIATED METHODS

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device
US3913127A (en) * 1971-10-01 1975-10-14 Hitachi Ltd Glass encapsulated semiconductor device containing cylindrical stack of semiconductor pellets
US3844029A (en) * 1972-02-02 1974-10-29 Trw Inc High power double-slug diode package
JPS4970858U (es) * 1972-10-04 1974-06-20
DE2261302A1 (de) * 1972-12-15 1974-07-04 Licentia Gmbh Halbleiteranordnung aus einem halbleiterbauelement

Also Published As

Publication number Publication date
FR2321192A1 (fr) 1977-03-11
IE44200B1 (en) 1981-09-09
GB1510294A (en) 1978-05-10
DE2636580A1 (de) 1977-02-17
SE7608988L (sv) 1977-02-15
AU1678376A (en) 1978-02-16
IT1062666B (it) 1984-10-20
CA1057420A (en) 1979-06-26
BR7605354A (pt) 1977-08-16
IE44200L (en) 1977-02-14
JPS5237772A (en) 1977-03-23
FR2321192B1 (es) 1979-03-02
NL7609034A (nl) 1977-02-16
US3996602A (en) 1976-12-07

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