ES438666A1 - Integrated circuit structure - Google Patents

Integrated circuit structure

Info

Publication number
ES438666A1
ES438666A1 ES438666A ES438666A ES438666A1 ES 438666 A1 ES438666 A1 ES 438666A1 ES 438666 A ES438666 A ES 438666A ES 438666 A ES438666 A ES 438666A ES 438666 A1 ES438666 A1 ES 438666A1
Authority
ES
Spain
Prior art keywords
cells
lines
resistors
transistors
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES438666A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES438666A1 publication Critical patent/ES438666A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11801—Masterslice integrated circuits using bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Improvements introduced in a semiconductor chip structure of integrated circuits in a plane, a structure that comprises a surface from which a plurality of regions of different types of conductivity extend that enter the chip forming transistors and resistors, the improvement in which said transistors and resistors are arranged in a plurality of repetitive cells, each of said cells containing a sufficient number of transistors and resistors to form a chosen type of logic circuit, and said cells being arranged in an orthogonal formation, with cells in essentially parallel rows in both orthogonal directions; and in which the structure includes a metallization level arranged above said formation and isolated from it by at least one layer of electrically insulating material, said metallization level comprising a plurality of groups of essentially parallel lines, respectively arranged above of and parallel to a corresponding plurality of interfacial zones or transition faces between rows of said cells in one of said orthogonal directions, each group of lines being connected to a plurality of cells that apply to the transition face below said group, providing interconnections between said cells, and voltage level supplies for them, and distribution designs or guidelines of lines respectively arranged between said groups of lines and at a certain separation distance from them and above said cells, providing intracellular connections. (Machine-translation by Google Translate, not legally binding)
ES438666A 1974-06-26 1975-06-18 Integrated circuit structure Expired ES438666A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48346374A 1974-06-26 1974-06-26

Publications (1)

Publication Number Publication Date
ES438666A1 true ES438666A1 (en) 1977-03-16

Family

ID=23920133

Family Applications (1)

Application Number Title Priority Date Filing Date
ES438666A Expired ES438666A1 (en) 1974-06-26 1975-06-18 Integrated circuit structure

Country Status (8)

Country Link
JP (2) JPS5125085A (en)
CA (1) CA1024661A (en)
CH (1) CH583970A5 (en)
DE (1) DE2523221A1 (en)
ES (1) ES438666A1 (en)
FR (1) FR2276693A1 (en)
GB (1) GB1513893A (en)
IT (1) IT1038108B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL185431C (en) * 1977-05-31 1990-04-02 Fujitsu Ltd INTEGRATED SEMICONDUCTOR CIRCUIT, INCLUDING A SEMICONDUCTOR BODY WITH AT LEAST TWO BASIC CIRCUITS OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH INSULATED CONTROL ELECTRODE.
CA1102009A (en) * 1977-09-06 1981-05-26 Algirdas J. Gruodis Integrated circuit layout utilizing separated active circuit and wiring regions
DE2822011B2 (en) * 1978-05-19 1980-06-04 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Semiconductor device and method for the production thereof
US4249193A (en) * 1978-05-25 1981-02-03 International Business Machines Corporation LSI Semiconductor device and fabrication thereof
FR2443185A1 (en) * 1978-11-30 1980-06-27 Ibm TOPOLOGY OF INTEGRATED SEMICONDUCTOR CIRCUITS AND METHOD FOR OBTAINING THIS TOPOLOGY
JPS5712534A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
FR2495834A1 (en) * 1980-12-05 1982-06-11 Cii Honeywell Bull INTEGRATED CIRCUIT DEVICE OF HIGH DENSITY
JPS57186350A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor integrated circuit device
JPS58112343A (en) * 1981-12-26 1983-07-04 Olympus Optical Co Ltd Semiconductor and manufacture thereof
JPS58143550A (en) * 1982-02-22 1983-08-26 Nec Corp Semiconductor device
JPS5943548A (en) * 1982-09-06 1984-03-10 Hitachi Ltd Semiconductor integrated circuit device
JPS59103455U (en) * 1982-12-28 1984-07-12 富士通株式会社 semiconductor equipment
EP0113828B1 (en) * 1983-01-12 1990-02-28 International Business Machines Corporation Master slice semiconductor chip having a new multi-function fet cell
JPS59159558A (en) * 1983-03-01 1984-09-10 Toshiba Corp Semiconductor substrate
JPS63278249A (en) * 1986-12-26 1988-11-15 Toshiba Corp Wiring of semiconductor integrated circuit device
EP0387812A3 (en) * 1989-03-14 1992-08-05 Fujitsu Limited Bipolar integrated circuit having a unit block structure
DE10317018A1 (en) * 2003-04-11 2004-11-18 Infineon Technologies Ag Multichip module with several semiconductor chips and printed circuit board with several components

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1064185A (en) * 1967-05-23 1954-05-11 Philips Nv Method of manufacturing an electrode system
DE1789137A1 (en) * 1967-06-23 1973-05-03 Rca Corp CIRCUIT CONSTRUCTED FROM UNIT CELLS
US3558992A (en) * 1968-06-17 1971-01-26 Rca Corp Integrated circuit having bonding pads over unused active area components
US3584269A (en) * 1968-10-11 1971-06-08 Ibm Diffused equal impedance interconnections for integrated circuits
US3656028A (en) * 1969-05-12 1972-04-11 Ibm Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereon
US3621562A (en) * 1970-04-29 1971-11-23 Sylvania Electric Prod Method of manufacturing integrated circuit arrays
US3771217A (en) * 1971-04-16 1973-11-13 Texas Instruments Inc Integrated circuit arrays utilizing discretionary wiring and method of fabricating same
US3725743A (en) * 1971-05-19 1973-04-03 Hitachi Ltd Multilayer wiring structure
US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method

Also Published As

Publication number Publication date
FR2276693A1 (en) 1976-01-23
JPS5753984B2 (en) 1982-11-16
DE2523221C2 (en) 1992-09-17
DE2523221A1 (en) 1976-01-15
CA1024661A (en) 1978-01-17
JPS5125085A (en) 1976-03-01
IT1038108B (en) 1979-11-20
FR2276693B1 (en) 1977-04-15
CH583970A5 (en) 1977-01-14
JPS5989435A (en) 1984-05-23
GB1513893A (en) 1978-06-14

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