ES410245A1 - Perfeccionamientos en los rectificadores gobernables. - Google Patents
Perfeccionamientos en los rectificadores gobernables.Info
- Publication number
- ES410245A1 ES410245A1 ES410245A ES410245A ES410245A1 ES 410245 A1 ES410245 A1 ES 410245A1 ES 410245 A ES410245 A ES 410245A ES 410245 A ES410245 A ES 410245A ES 410245 A1 ES410245 A1 ES 410245A1
- Authority
- ES
- Spain
- Prior art keywords
- emitter
- zones
- zone
- adulterated
- conductive coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000035515 penetration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
Abstract
Perfeccionamientos en los rectificadores gobernables, a base de semiconductor, con por lo menos cuatro zonas de tipo de conductividad alternativamente opuesto, de las cuales por lo menos una de las zonas interiores débilmente adulteradas que se encuentran contiguas a las zonas de emisor exteriores intensamente adulteradas se extiende a través de la zona de emisor correspondiente hasta la superficie exterior de esta última y está unida directamente con un recubrimiento conductivo dispuesto en dicha superficie, el cual sirve para la contactación, caracterizados porque para la penetración de la zona interior a través de la zona de emisor hasta el recubrimiento conductivo se ha previsto en la zona de emisor una escotadura que comprende una pluralidad de sectores en forma de brazos unidos que forman una figura geométrica conexa
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712164644 DE2164644C3 (de) | 1971-12-24 | 1971-12-24 | Steuerbarer Halbleitergleichrichter |
Publications (1)
Publication Number | Publication Date |
---|---|
ES410245A1 true ES410245A1 (es) | 1975-12-01 |
Family
ID=5829270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES410245A Expired ES410245A1 (es) | 1971-12-24 | 1972-12-20 | Perfeccionamientos en los rectificadores gobernables. |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS4874792A (es) |
AR (1) | AR192995A1 (es) |
BR (1) | BR7209060D0 (es) |
CH (1) | CH558984A (es) |
DE (1) | DE2164644C3 (es) |
ES (1) | ES410245A1 (es) |
FR (1) | FR2164901B1 (es) |
GB (1) | GB1421146A (es) |
IT (1) | IT972837B (es) |
SE (1) | SE408354B (es) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2254880B1 (es) * | 1973-12-12 | 1978-11-10 | Alsthom Cgee | |
JPS5516497A (en) * | 1978-06-14 | 1980-02-05 | Gen Electric | Gate turnnoff semiconductor switching device |
DE4410461C1 (de) * | 1994-03-25 | 1995-06-01 | Siemens Ag | Halbleiterbauelement mit anodenseitiger Getterung |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3619738A (en) * | 1969-10-13 | 1971-11-09 | Tokyo Shibaura Electric Co | Semiconductor device with improved connection to control electrode region |
-
1971
- 1971-12-24 DE DE19712164644 patent/DE2164644C3/de not_active Expired
-
1972
- 1972-12-05 CH CH1769972A patent/CH558984A/xx not_active IP Right Cessation
- 1972-12-19 SE SE1662472A patent/SE408354B/xx unknown
- 1972-12-19 JP JP12684072A patent/JPS4874792A/ja active Pending
- 1972-12-20 GB GB5883972A patent/GB1421146A/en not_active Expired
- 1972-12-20 ES ES410245A patent/ES410245A1/es not_active Expired
- 1972-12-21 BR BR906072A patent/BR7209060D0/pt unknown
- 1972-12-21 AR AR24579172A patent/AR192995A1/es active
- 1972-12-22 IT IT3349272A patent/IT972837B/it active
- 1972-12-22 FR FR7245991A patent/FR2164901B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2164901B1 (es) | 1977-08-26 |
BR7209060D0 (pt) | 1973-09-13 |
GB1421146A (en) | 1976-01-14 |
FR2164901A1 (es) | 1973-08-03 |
CH558984A (de) | 1975-02-14 |
DE2164644A1 (de) | 1973-07-05 |
SE408354B (sv) | 1979-06-05 |
DE2164644B2 (de) | 1979-02-01 |
JPS4874792A (es) | 1973-10-08 |
IT972837B (it) | 1974-05-31 |
AR192995A1 (es) | 1973-03-21 |
DE2164644C3 (de) | 1979-09-27 |
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