ES385916A1 - Un dispositivo amplificador de tension integrado a transis-tores. - Google Patents

Un dispositivo amplificador de tension integrado a transis-tores.

Info

Publication number
ES385916A1
ES385916A1 ES385916A ES385916A ES385916A1 ES 385916 A1 ES385916 A1 ES 385916A1 ES 385916 A ES385916 A ES 385916A ES 385916 A ES385916 A ES 385916A ES 385916 A1 ES385916 A1 ES 385916A1
Authority
ES
Spain
Prior art keywords
transistor
collector
direct current
voltage amplifier
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES385916A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES385916A1 publication Critical patent/ES385916A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0783—Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
ES385916A 1969-11-28 1970-11-26 Un dispositivo amplificador de tension integrado a transis-tores. Expired ES385916A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6917885A NL6917885A (es) 1969-11-28 1969-11-28

Publications (1)

Publication Number Publication Date
ES385916A1 true ES385916A1 (es) 1973-11-16

Family

ID=19808499

Family Applications (1)

Application Number Title Priority Date Filing Date
ES385916A Expired ES385916A1 (es) 1969-11-28 1970-11-26 Un dispositivo amplificador de tension integrado a transis-tores.

Country Status (7)

Country Link
US (1) US3694762A (es)
CA (1) CA946052A (es)
DE (1) DE2054863C3 (es)
ES (1) ES385916A1 (es)
FR (1) FR2072301A5 (es)
GB (1) GB1331279A (es)
NL (1) NL6917885A (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (es) * 1971-05-22 1972-11-24
US3784923A (en) * 1971-06-09 1974-01-08 Motorola Inc Controllable audio amplifier for miniature receiver provided by a thick film module including an integrated circuit
US4145621A (en) * 1972-03-04 1979-03-20 Ferranti Limited Transistor logic circuits
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits
US3848139A (en) * 1973-09-14 1974-11-12 Fairchild Camera Instr Co High-gain comparator circuit
US3987477A (en) * 1974-09-25 1976-10-19 Motorola, Inc. Beta compensated integrated current mirror
US3979689A (en) * 1975-01-29 1976-09-07 Rca Corporation Differential amplifier circuit
DE2538910C3 (de) * 1975-09-02 1980-01-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung zur Erhöhung der Schaltgeschwindigkeit einer integrierten Schaltung
DE3012365C2 (de) * 1980-03-29 1982-04-22 Robert Bosch Gmbh, 7000 Stuttgart Differenzverstärker
US4408167A (en) * 1981-04-03 1983-10-04 International Business Machines Corporation Current amplifier stage with diode interstage connection
IT1212720B (it) * 1983-03-23 1989-11-30 Ates Componenti Elettron Convertitore tensione-corrente ad alta precisione, particolarmente per basse tensioni di alimentazione.
US4831281A (en) * 1984-04-02 1989-05-16 Motorola, Inc. Merged multi-collector transistor

Also Published As

Publication number Publication date
NL6917885A (es) 1971-06-02
DE2054863C3 (de) 1980-01-03
GB1331279A (en) 1973-09-26
DE2054863B2 (de) 1976-05-06
US3694762A (en) 1972-09-26
CA946052A (en) 1974-04-23
FR2072301A5 (es) 1971-09-24
DE2054863A1 (de) 1971-06-09

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