ES375285A1 - A semiconductor device (Machine-translation by Google Translate, not legally binding) - Google Patents

A semiconductor device (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES375285A1
ES375285A1 ES0375285A ES375285A ES375285A1 ES 375285 A1 ES375285 A1 ES 375285A1 ES 0375285 A ES0375285 A ES 0375285A ES 375285 A ES375285 A ES 375285A ES 375285 A1 ES375285 A1 ES 375285A1
Authority
ES
Spain
Prior art keywords
type
island
conductivity
layer
translation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0375285A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to ES0375285A priority Critical patent/ES375285A1/en
Publication of ES375285A1 publication Critical patent/ES375285A1/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

A semiconductor device comprising a semiconductor substrate of a first type of conductivity, on a first surface of which is provided an epitaxial semiconductor layer, of the opposite conductivity type, said layer being divided into a number of parts, called islands, of the type of opposite conductivity, by separation zones of the first type of conductivity, which extend across the entire thickness of the epitaxial layer, a lateral transistor being provided on at least one island, whose emitter and collector zones are located adjacent to one another and comprising surface areas of a first type of conductivity, being located, a buried layer of the opposite conductivity type, in the vicinity of the junction between the first island and the substrate, characterized in that, from the surface of the first island, the emitter zone extends deeper in said island than the collector zone, and, contrary to the collector zone, it reaches this is the buried layer. (Machine-translation by Google Translate, not legally binding)
ES0375285A 1970-01-09 1970-01-09 A semiconductor device (Machine-translation by Google Translate, not legally binding) Expired ES375285A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES0375285A ES375285A1 (en) 1970-01-09 1970-01-09 A semiconductor device (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES0375285A ES375285A1 (en) 1970-01-09 1970-01-09 A semiconductor device (Machine-translation by Google Translate, not legally binding)

Publications (1)

Publication Number Publication Date
ES375285A1 true ES375285A1 (en) 1972-08-16

Family

ID=59033086

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0375285A Expired ES375285A1 (en) 1970-01-09 1970-01-09 A semiconductor device (Machine-translation by Google Translate, not legally binding)

Country Status (1)

Country Link
ES (1) ES375285A1 (en)

Similar Documents

Publication Publication Date Title
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
ES421881A1 (en) Semiconductor devices
ES329618A1 (en) A method of manufacturing a transistor. (Machine-translation by Google Translate, not legally binding)
ES401854A1 (en) Semiconductor device manufacture
ES438593A1 (en) Semiconductor device having complementary transistors and method of manufacturing same
ES375285A1 (en) A semiconductor device (Machine-translation by Google Translate, not legally binding)
ES402165A1 (en) Monolithic semiconductor device
GB1334745A (en) Semiconductor devices
ES374056A1 (en) Barrier layer devices and methods for their manufacture
GB1287247A (en) Improved semiconductor device with high junction breakdown voltage and method of manufacture
GB1053428A (en)
GB1021147A (en) Divided base four-layer semiconductor device
GB1531811A (en) Complementary transistors and their manufacture
FR2363897A1 (en) Darlington amplifier with heavily doped buried regions - forming a diode with high breakdown voltage
GB1362852A (en) High frequency planar transistor employing highly resistive guard ring
ES352147A1 (en) Integrated circuit having matched complementary transistors
GB1335037A (en) Field effect transistor
ES392398A1 (en) Semiconductor devices
ES377825A1 (en) Semiconductor devices
ES393036A1 (en) Compact semiconductor device for monolithic integrated circuits
GB1007936A (en) Improvements in or relating to semiconductive devices
ES401687A1 (en) Semiconductor device manufacture
ES363184A1 (en) Method for the manufacture of monolithic semiconductor devices. (Machine-translation by Google Translate, not legally binding)
GB1428742A (en) Semiconductor devices
GB1260567A (en) Improvements in or relating to semiconductor devices