ES346841A1 - Thin Film Silicon Layer and Microcircuit on an Insulating Substrate - Google Patents

Thin Film Silicon Layer and Microcircuit on an Insulating Substrate

Info

Publication number
ES346841A1
ES346841A1 ES346841A ES346841A ES346841A1 ES 346841 A1 ES346841 A1 ES 346841A1 ES 346841 A ES346841 A ES 346841A ES 346841 A ES346841 A ES 346841A ES 346841 A1 ES346841 A1 ES 346841A1
Authority
ES
Spain
Prior art keywords
microcircuit
thin film
silicon layer
insulating substrate
film silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES346841A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES346841A1 publication Critical patent/ES346841A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Geology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

An epitaxial layer of monocrystalline silicon is deposited from, e.g. a silane-hydrogen mixture on a spinel substrate having a MgO : A1 2 0 3 molar ratio of 1: 1 to 1 : 1À5. The silicon may be doped P- or N-type using diborane- or phosphine-hydrogen.
ES346841A 1966-11-09 1967-11-07 Thin Film Silicon Layer and Microcircuit on an Insulating Substrate Expired ES346841A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59297866A 1966-11-09 1966-11-09

Publications (1)

Publication Number Publication Date
ES346841A1 true ES346841A1 (en) 1969-02-16

Family

ID=24372851

Family Applications (1)

Application Number Title Priority Date Filing Date
ES346841A Expired ES346841A1 (en) 1966-11-09 1967-11-07 Thin Film Silicon Layer and Microcircuit on an Insulating Substrate

Country Status (4)

Country Link
DE (1) DE1646974B1 (en)
ES (1) ES346841A1 (en)
FR (1) FR1552021A (en)
GB (1) GB1176258A (en)

Also Published As

Publication number Publication date
FR1552021A (en) 1969-01-03
DE1646974B1 (en) 1971-05-27
GB1176258A (en) 1970-01-01

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