GB1176258A - Thin Film Silicon Layer and Microcircuit on an Insulating Substrate - Google Patents

Thin Film Silicon Layer and Microcircuit on an Insulating Substrate

Info

Publication number
GB1176258A
GB1176258A GB48291/67A GB4829167A GB1176258A GB 1176258 A GB1176258 A GB 1176258A GB 48291/67 A GB48291/67 A GB 48291/67A GB 4829167 A GB4829167 A GB 4829167A GB 1176258 A GB1176258 A GB 1176258A
Authority
GB
United Kingdom
Prior art keywords
microcircuit
thin film
silicon layer
insulating substrate
film silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48291/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1176258A publication Critical patent/GB1176258A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

1,176,258. Semi-conductor devices. RCA CORPORATION. 24 Oct., 1967 [9 Nov., 1966], No. 48291/67. Heading H1K. [Also in Divisions C1 and C7] An epitaxial layer of monocrystalline silicon is deposited from, e.g. a silane-hydrogen mixture on a spinel substrate having a MgO : A1 2 0 3 molar ratio of 1: 1 to 1 : 1À5. The silicon may be doped P- or N-type using diborane- or phosphine-hydrogen.
GB48291/67A 1966-11-09 1967-10-24 Thin Film Silicon Layer and Microcircuit on an Insulating Substrate Expired GB1176258A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59297866A 1966-11-09 1966-11-09

Publications (1)

Publication Number Publication Date
GB1176258A true GB1176258A (en) 1970-01-01

Family

ID=24372851

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48291/67A Expired GB1176258A (en) 1966-11-09 1967-10-24 Thin Film Silicon Layer and Microcircuit on an Insulating Substrate

Country Status (4)

Country Link
DE (1) DE1646974B1 (en)
ES (1) ES346841A1 (en)
FR (1) FR1552021A (en)
GB (1) GB1176258A (en)

Also Published As

Publication number Publication date
DE1646974B1 (en) 1971-05-27
FR1552021A (en) 1969-01-03
ES346841A1 (en) 1969-02-16

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