ES344416A1 - Un metodo de fabricar un rectificador de alta tension. - Google Patents

Un metodo de fabricar un rectificador de alta tension.

Info

Publication number
ES344416A1
ES344416A1 ES344416A ES344416A ES344416A1 ES 344416 A1 ES344416 A1 ES 344416A1 ES 344416 A ES344416 A ES 344416A ES 344416 A ES344416 A ES 344416A ES 344416 A1 ES344416 A1 ES 344416A1
Authority
ES
Spain
Prior art keywords
elements
diode elements
stack
holder
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES344416A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES344416A1 publication Critical patent/ES344416A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Rectifiers (AREA)
ES344416A 1966-08-26 1967-08-24 Un metodo de fabricar un rectificador de alta tension. Expired ES344416A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6612022A NL6612022A (en, 2012) 1966-08-26 1966-08-26

Publications (1)

Publication Number Publication Date
ES344416A1 true ES344416A1 (es) 1968-12-01

Family

ID=19797506

Family Applications (1)

Application Number Title Priority Date Filing Date
ES344416A Expired ES344416A1 (es) 1966-08-26 1967-08-24 Un metodo de fabricar un rectificador de alta tension.

Country Status (10)

Country Link
US (1) US3543395A (en, 2012)
JP (1) JPS4841073B1 (en, 2012)
AT (1) AT276567B (en, 2012)
CH (1) CH460958A (en, 2012)
DE (1) DE1614273B2 (en, 2012)
DK (1) DK116072B (en, 2012)
ES (1) ES344416A1 (en, 2012)
GB (1) GB1190048A (en, 2012)
NL (1) NL6612022A (en, 2012)
SE (1) SE334679B (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3811180A (en) * 1971-11-12 1974-05-21 Hughes Aircraft Co Method of manufacture of liquid crystal device
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen
GB0724318D0 (en) * 2007-12-13 2008-01-30 Arora Gmbh An electronic device
CN104576419B (zh) * 2014-05-30 2017-12-01 扬州虹扬科技发展有限公司 一种cell芯片的生产工艺

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2750540A (en) * 1950-08-17 1956-06-12 Siemens Ag Selenium rectifiers and their manufacture
US2844771A (en) * 1956-01-23 1958-07-22 Siemens Reiniger Werke Ag High-tension barrier-layer rectification unit for installation in the high-tension generator of an X-ray apparatus
US2922091A (en) * 1956-10-19 1960-01-19 Int Rectifier Corp Cartridge assembly for rectifier
NL262934A (en, 2012) * 1960-03-30
US3151382A (en) * 1961-01-10 1964-10-06 Cornell Dubilier Electric Method for making mica condensers
US3303549A (en) * 1964-03-23 1967-02-14 Sanders Associates Inc Method of making semiconductor devices utilizing vacuum welding
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor

Also Published As

Publication number Publication date
DK116072B (da) 1969-12-08
SE334679B (en, 2012) 1971-05-03
JPS4841073B1 (en, 2012) 1973-12-04
DE1614273B2 (de) 1976-06-16
GB1190048A (en) 1970-04-29
NL6612022A (en, 2012) 1968-02-27
US3543395A (en) 1970-12-01
DE1614273A1 (de) 1970-05-27
AT276567B (de) 1969-11-25
CH460958A (de) 1968-08-15

Similar Documents

Publication Publication Date Title
US3067485A (en) Semiconductor diode
US3640806A (en) Semiconductor device and method of producing the same
US2819414A (en) Radioactive battery employing stacked semi-conducting devices
US3290753A (en) Method of making semiconductor integrated circuit elements
US2930950A (en) High power field-effect transistor
US3013955A (en) Method of transistor manufacture
WO2021136526A1 (zh) 发热元件及其制备方法
ES344416A1 (es) Un metodo de fabricar un rectificador de alta tension.
US2793178A (en) Method of providing insulator with multiplicity of conducting elements
US3846198A (en) Method of making semiconductor devices having thin active regions of the semiconductor material
US3839164A (en) Method of manufacturing capacitors in an electronic microstructure
US3010885A (en) Method for electrolytically etching and thereafter anodically oxidizing an essentially monocrystalline semiconductor body having a p-n junction
US3890178A (en) Method of manufacturing a semiconductor device having a multi-thickness region
GB992963A (en) Semiconductor devices
US3636418A (en) Epitaxial semiconductor device having adherent bonding pads
US3371836A (en) Device for making semiconductor arrangements
US3419480A (en) Anodic oxidation
US20210119099A1 (en) Thermoelectric module and method for manufacturing thermoelectric module post
GB996721A (en) Improvements in and relating to semiconductor devices
US3264201A (en) Method of producing a silicon semiconductor device
US3656228A (en) Semi-conductor devices and the manufacture thereof
GB1293807A (en) Semiconductor wafers sub-dividable into pellets and methods of fabricating same
US3537920A (en) Process for the production of diodes by electric pulses
US3476661A (en) Process for increasing the reverse voltage of thermally oxidized silicon members with at least one barrier layer
CH362752A (de) Halbleiteranordnung und Verfahren zur Herstellung derselben