ES339179A1 - Method of producing layers of grains particularly monolayers of grains embedded in a filler - Google Patents

Method of producing layers of grains particularly monolayers of grains embedded in a filler

Info

Publication number
ES339179A1
ES339179A1 ES339179A ES339179A ES339179A1 ES 339179 A1 ES339179 A1 ES 339179A1 ES 339179 A ES339179 A ES 339179A ES 339179 A ES339179 A ES 339179A ES 339179 A1 ES339179 A1 ES 339179A1
Authority
ES
Spain
Prior art keywords
grains
filler
monolayers
embedded
producing layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES339179A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES339179A1 publication Critical patent/ES339179A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Abstract

A method of manufacturing an electrical device in which a liquid electrically insulating filler substance is applied to a layer of electrically active grains which filler is allowed to contract thus exposing the peaks of the grains after which it is allowed to harden. The filler is preferably a resin hardenable by polymerization or by polycondensation in a liquid solution with a volatile solvent, for example polyurethane.
ES339179A 1966-04-14 1967-04-12 Method of producing layers of grains particularly monolayers of grains embedded in a filler Expired ES339179A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL666604960A NL154876B (en) 1966-04-14 1966-04-14 PROCESS FOR THE MANUFACTURE OF ELECTRICAL ACTIVE DEVICES WITH MONO-GRAIN LAYERS WITH ACTIVE GRAINS IN AN INSULATING FILLER, AS WELL AS ELECTRICAL EFFECTIVE DEVICE OBTAINED ACCORDING TO THIS PROCEDURE.

Publications (1)

Publication Number Publication Date
ES339179A1 true ES339179A1 (en) 1968-04-16

Family

ID=19796278

Family Applications (1)

Application Number Title Priority Date Filing Date
ES339179A Expired ES339179A1 (en) 1966-04-14 1967-04-12 Method of producing layers of grains particularly monolayers of grains embedded in a filler

Country Status (15)

Country Link
US (1) US3649354A (en)
JP (1) JPS4412777B1 (en)
AT (1) AT287807B (en)
BE (1) BE697073A (en)
CH (1) CH522276A (en)
DE (1) DE1621761C3 (en)
DK (1) DK126609B (en)
ES (1) ES339179A1 (en)
FR (1) FR1519072A (en)
GB (2) GB1186075A (en)
IL (1) IL27796A (en)
NL (1) NL154876B (en)
NO (1) NO123291B (en)
OA (1) OA02587A (en)
SE (1) SE338624B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US3980494A (en) * 1975-01-02 1976-09-14 Beatty Charles L Method of reducing friction in blade cleaning of imaging surfaces
US3954466A (en) * 1975-01-02 1976-05-04 Xerox Corporation Electrostatographic photoreceptor
US4015985A (en) * 1975-04-09 1977-04-05 Xerox Corporation Composite xerographic photoreceptor with injecting contact layer
US4074010A (en) * 1975-05-12 1978-02-14 Lyle V. Anderson Ceramic-paint coatings
JP2811613B2 (en) * 1991-09-02 1998-10-15 ティーディーケイ株式会社 Manufacturing method and apparatus for electronic components
US5240493A (en) * 1992-01-16 1993-08-31 Institute Of Gas Technology Process for preparing submicron/nanosize ceramic powders from precursors incorporated within a polymeric foam
US5338334A (en) * 1992-01-16 1994-08-16 Institute Of Gas Technology Process for preparing submicron/nanosize ceramic powders from precursors incorporated within a polymeric foam
TW277152B (en) * 1994-05-10 1996-06-01 Hitachi Chemical Co Ltd
US6657225B1 (en) * 1998-03-25 2003-12-02 Seiko Epson Corporation Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
JP4592333B2 (en) * 2004-05-31 2010-12-01 三洋電機株式会社 Circuit device and manufacturing method thereof
WO2013053052A1 (en) 2011-10-14 2013-04-18 Diftek Lasers, Inc. Planarized semiconductor particles positioned on a substrate
US9455307B2 (en) 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
US9209019B2 (en) 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2201196A (en) * 1939-06-27 1940-05-21 Carborundum Co Manufacture of granular coated materials
US2567186A (en) * 1943-11-12 1951-09-11 Minnesota Mining & Mfg Inverse method of forming particulate coated sheets
US3031344A (en) * 1957-08-08 1962-04-24 Radio Ind Inc Production of electrical printed circuits
US2904613A (en) * 1957-08-26 1959-09-15 Hoffman Electronics Corp Large area solar energy converter and method for making the same
US3108021A (en) * 1961-06-12 1963-10-22 Int Rectifier Corp Cadmium sulfide photo-cell
US3291578A (en) * 1963-11-04 1966-12-13 Gen Electric Metallized semiconductor support and mounting structure

Also Published As

Publication number Publication date
FR1519072A (en) 1968-03-29
SE338624B (en) 1971-09-13
OA02587A (en) 1970-05-05
DK126609B (en) 1973-07-30
DE1621761C3 (en) 1981-02-05
US3649354A (en) 1972-03-14
IL27796A (en) 1971-11-29
NO123291B (en) 1971-10-25
GB1186075A (en) 1970-04-02
DE1621761A1 (en) 1972-04-13
NL6604960A (en) 1967-10-16
DE1621761B (en)
GB1186076A (en) 1970-04-02
CH522276A (en) 1972-06-15
JPS4412777B1 (en) 1969-06-09
AT287807B (en) 1971-02-10
BE697073A (en) 1967-10-16
NL154876B (en) 1977-10-17

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