ES327650A1 - Una disposicion de circuito mezclador autooscilante con transistor. - Google Patents

Una disposicion de circuito mezclador autooscilante con transistor.

Info

Publication number
ES327650A1
ES327650A1 ES0327650A ES327650A ES327650A1 ES 327650 A1 ES327650 A1 ES 327650A1 ES 0327650 A ES0327650 A ES 0327650A ES 327650 A ES327650 A ES 327650A ES 327650 A1 ES327650 A1 ES 327650A1
Authority
ES
Spain
Prior art keywords
transistor
translation
machine
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0327650A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES327650A1 publication Critical patent/ES327650A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Junction Field-Effect Transistors (AREA)
ES0327650A 1965-06-09 1966-06-07 Una disposicion de circuito mezclador autooscilante con transistor. Expired ES327650A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24377/65A GB1146671A (en) 1965-06-09 1965-06-09 Self-oscillating mixer circuits with automatic gain control

Publications (1)

Publication Number Publication Date
ES327650A1 true ES327650A1 (es) 1967-07-16

Family

ID=10210781

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0327650A Expired ES327650A1 (es) 1965-06-09 1966-06-07 Una disposicion de circuito mezclador autooscilante con transistor.

Country Status (5)

Country Link
BE (1) BE682210A (enrdf_load_stackoverflow)
ES (1) ES327650A1 (enrdf_load_stackoverflow)
FR (1) FR1483119A (enrdf_load_stackoverflow)
GB (1) GB1146671A (enrdf_load_stackoverflow)
NL (1) NL6607801A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2522902A1 (fr) * 1982-03-03 1983-09-09 Labo Electronique Physique Utilisation d'un transistor a effet de champ, du type a double-grille et ile ohmique intercalee, en vue de la rejection d'une bande de frequences
DE3216776C2 (de) * 1982-05-05 1985-07-11 Telefunken electronic GmbH, 7100 Heilbronn Hochfrequenzmischstufe

Also Published As

Publication number Publication date
BE682210A (enrdf_load_stackoverflow) 1966-12-07
NL6607801A (enrdf_load_stackoverflow) 1966-12-12
FR1483119A (fr) 1967-06-02
GB1146671A (en) 1969-03-26

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