ES324967A1 - Celula de memoria de diodo-tunel - Google Patents

Celula de memoria de diodo-tunel

Info

Publication number
ES324967A1
ES324967A1 ES0324967A ES324967A ES324967A1 ES 324967 A1 ES324967 A1 ES 324967A1 ES 0324967 A ES0324967 A ES 0324967A ES 324967 A ES324967 A ES 324967A ES 324967 A1 ES324967 A1 ES 324967A1
Authority
ES
Spain
Prior art keywords
diode
translation
machine
memory cell
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0324967A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of ES324967A1 publication Critical patent/ES324967A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
ES0324967A 1965-04-02 1966-03-31 Celula de memoria de diodo-tunel Expired ES324967A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11797A FR1441559A (fr) 1965-04-02 1965-04-02 Cellule de mémoire à diode tunnel

Publications (1)

Publication Number Publication Date
ES324967A1 true ES324967A1 (es) 1967-04-01

Family

ID=8575570

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0324967A Expired ES324967A1 (es) 1965-04-02 1966-03-31 Celula de memoria de diodo-tunel

Country Status (8)

Country Link
BE (1) BE678565A (de)
CH (1) CH454226A (de)
DE (1) DE1499612B1 (de)
ES (1) ES324967A1 (de)
FR (1) FR1441559A (de)
GB (1) GB1081570A (de)
LU (1) LU50810A1 (de)
NL (1) NL6604315A (de)

Also Published As

Publication number Publication date
LU50810A1 (de) 1966-06-01
FR1441559A (fr) 1966-06-10
CH454226A (fr) 1968-04-15
BE678565A (de) 1966-09-01
DE1499612B1 (de) 1970-11-12
NL6604315A (de) 1966-10-03
GB1081570A (en) 1967-08-31

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