ES323958A1 - Un conjunto transistor de alta potencia. - Google Patents
Un conjunto transistor de alta potencia.Info
- Publication number
- ES323958A1 ES323958A1 ES0323958A ES323958A ES323958A1 ES 323958 A1 ES323958 A1 ES 323958A1 ES 0323958 A ES0323958 A ES 0323958A ES 323958 A ES323958 A ES 323958A ES 323958 A1 ES323958 A1 ES 323958A1
- Authority
- ES
- Spain
- Prior art keywords
- support
- transistor
- collector
- translation
- high power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000000615 nonconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43796065A | 1965-03-08 | 1965-03-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES323958A1 true ES323958A1 (es) | 1966-11-16 |
Family
ID=23738642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0323958A Expired ES323958A1 (es) | 1965-03-08 | 1966-03-08 | Un conjunto transistor de alta potencia. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3506886A (es) |
DE (1) | DE1564126C3 (es) |
ES (1) | ES323958A1 (es) |
GB (1) | GB1109211A (es) |
NL (1) | NL6603046A (es) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL164703C (nl) * | 1968-06-21 | 1981-01-15 | Philips Nv | Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen. |
DE1789063A1 (de) * | 1968-09-30 | 1971-12-30 | Siemens Ag | Traeger fuer Halbleiterbauelemente |
US4546374A (en) * | 1981-03-23 | 1985-10-08 | Motorola Inc. | Semiconductor device including plateless package |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3259814A (en) * | 1955-05-20 | 1966-07-05 | Rca Corp | Power semiconductor assembly including heat dispersing means |
NL101297C (es) * | 1956-06-12 | |||
US3079254A (en) * | 1959-01-26 | 1963-02-26 | George W Crowley | Photographic fabrication of semiconductor devices |
US3025437A (en) * | 1960-02-05 | 1962-03-13 | Lear Inc | Semiconductor heat sink and electrical insulator |
US3095526A (en) * | 1961-02-20 | 1963-06-25 | Philco Corp | Semiconductor unit |
US3187240A (en) * | 1961-08-08 | 1965-06-01 | Bell Telephone Labor Inc | Semiconductor device encapsulation and method |
US3195026A (en) * | 1962-09-21 | 1965-07-13 | Westinghouse Electric Corp | Hermetically enclosed semiconductor device |
NL296170A (es) * | 1962-10-04 | |||
US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
-
1965
- 1965-03-08 US US437960A patent/US3506886A/en not_active Expired - Lifetime
-
1966
- 1966-02-28 GB GB8600/66A patent/GB1109211A/en not_active Expired
- 1966-03-05 DE DE1564126A patent/DE1564126C3/de not_active Expired
- 1966-03-08 NL NL6603046A patent/NL6603046A/xx unknown
- 1966-03-08 ES ES0323958A patent/ES323958A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1564126A1 (de) | 1970-01-15 |
US3506886A (en) | 1970-04-14 |
DE1564126C3 (de) | 1974-05-22 |
DE1564126B2 (de) | 1972-03-23 |
GB1109211A (en) | 1968-04-10 |
NL6603046A (es) | 1966-09-09 |
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