ES278662A1 - Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding) - Google Patents
Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES278662A1 ES278662A1 ES278662A ES278662A ES278662A1 ES 278662 A1 ES278662 A1 ES 278662A1 ES 278662 A ES278662 A ES 278662A ES 278662 A ES278662 A ES 278662A ES 278662 A1 ES278662 A1 ES 278662A1
- Authority
- ES
- Spain
- Prior art keywords
- semiconductive
- film
- substrate
- translation
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Process for forming on a semiconductive substrate, a semiconductor epitaxial film, gallium arsenide or gallium phosphide; characterized in that a generating material, constituted essentially by the semiconductive compound that is to form the film, is heated in an atmosphere constituted in substance by a hydrogen halide in a gas or vapor state, and that film material is deposited on the surface of the substrate, maintaining a temperature difference between the substrate and the generator material. (Machine-translation by Google Translate, not legally binding)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES278662A ES278662A1 (en) | 1962-06-19 | 1962-06-19 | Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES278662A ES278662A1 (en) | 1962-06-19 | 1962-06-19 | Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES278662A1 true ES278662A1 (en) | 1962-10-16 |
Family
ID=66650571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES278662A Expired ES278662A1 (en) | 1962-06-19 | 1962-06-19 | Procedure to form on a semiconductive substrate a semiconductive epitaxil film. (Machine-translation by Google Translate, not legally binding) |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES278662A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020124278A1 (en) * | 2018-12-21 | 2020-06-25 | Oatech Spa | Mobile offshore farm for the growth of hydrobiological species |
-
1962
- 1962-06-19 ES ES278662A patent/ES278662A1/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020124278A1 (en) * | 2018-12-21 | 2020-06-25 | Oatech Spa | Mobile offshore farm for the growth of hydrobiological species |
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