ES2772449T3 - Sistema de capas para células solares de película delgada con una capa de amortiguación de naxinisyclz - Google Patents
Sistema de capas para células solares de película delgada con una capa de amortiguación de naxinisyclz Download PDFInfo
- Publication number
- ES2772449T3 ES2772449T3 ES13729727T ES13729727T ES2772449T3 ES 2772449 T3 ES2772449 T3 ES 2772449T3 ES 13729727 T ES13729727 T ES 13729727T ES 13729727 T ES13729727 T ES 13729727T ES 2772449 T3 ES2772449 T3 ES 2772449T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- sodium
- buffer layer
- atomic
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12172699 | 2012-06-20 | ||
| PCT/EP2013/062703 WO2013189968A1 (de) | 2012-06-20 | 2013-06-19 | SCHICHTSYSTEM FÜR DÜNNSCHICHTSOLARZELLEN MIT NaxInlSyClz-PUFFERSCHICHT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2772449T3 true ES2772449T3 (es) | 2020-07-07 |
Family
ID=47002500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES13729727T Active ES2772449T3 (es) | 2012-06-20 | 2013-06-19 | Sistema de capas para células solares de película delgada con una capa de amortiguación de naxinisyclz |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9871155B2 (enExample) |
| EP (1) | EP2865011B1 (enExample) |
| JP (1) | JP5985052B2 (enExample) |
| KR (1) | KR101742541B1 (enExample) |
| CN (1) | CN105144401B (enExample) |
| ES (1) | ES2772449T3 (enExample) |
| IN (1) | IN2014KN02866A (enExample) |
| WO (1) | WO2013189968A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9382618B2 (en) * | 2014-07-18 | 2016-07-05 | UChicago Argnonne, LLC | Oxygen-free atomic layer deposition of indium sulfide |
| KR20180103676A (ko) * | 2014-12-22 | 2018-09-19 | 벵부 디자인 앤드 리서치 인스티튜트 포 글래스 인더스트리 | 나트륨 인듐 술피드 버퍼 층을 갖는 박층 태양 전지용 층 시스템의 제조 방법 |
| KR101671002B1 (ko) | 2015-07-24 | 2016-11-01 | 청주대학교 산학협력단 | 태양전지 반사방지막 및 그 제조방법 |
| WO2025184813A1 (en) * | 2024-03-06 | 2025-09-12 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Method and apparatus for producing a layer system for the manufacture of thin-film solar cells |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4442824C1 (de) | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| JPH11204810A (ja) * | 1998-01-08 | 1999-07-30 | Asahi Chem Ind Co Ltd | 化合物半導体太陽電池 |
| DE19956735B4 (de) | 1999-11-25 | 2008-08-21 | Shell Erneuerbare Energien Gmbh | Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung |
| FR2820241B1 (fr) | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
| HUE052503T2 (hu) * | 2007-09-12 | 2021-05-28 | Flisom Ag | Berendezés kompozit film gyártására |
| US20090235987A1 (en) * | 2008-03-24 | 2009-09-24 | Epv Solar, Inc. | Chemical Treatments to Enhance Photovoltaic Performance of CIGS |
| DE102008024230A1 (de) | 2008-05-19 | 2009-11-26 | Avancis Gmbh & Co. Kg | Schichtsystem für Solarzellen |
| JP2011204810A (ja) | 2010-03-25 | 2011-10-13 | Sumitomo Bakelite Co Ltd | 波長変換部材および光起電装置 |
-
2013
- 2013-06-19 KR KR1020147035727A patent/KR101742541B1/ko active Active
- 2013-06-19 CN CN201380032809.6A patent/CN105144401B/zh active Active
- 2013-06-19 JP JP2015517741A patent/JP5985052B2/ja active Active
- 2013-06-19 ES ES13729727T patent/ES2772449T3/es active Active
- 2013-06-19 IN IN2866KON2014 patent/IN2014KN02866A/en unknown
- 2013-06-19 US US14/409,669 patent/US9871155B2/en active Active
- 2013-06-19 WO PCT/EP2013/062703 patent/WO2013189968A1/de not_active Ceased
- 2013-06-19 EP EP13729727.1A patent/EP2865011B1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9871155B2 (en) | 2018-01-16 |
| US20150295105A1 (en) | 2015-10-15 |
| CN105144401A (zh) | 2015-12-09 |
| JP2015520521A (ja) | 2015-07-16 |
| KR101742541B1 (ko) | 2017-06-01 |
| KR20150013328A (ko) | 2015-02-04 |
| CN105144401B (zh) | 2018-02-09 |
| WO2013189968A1 (de) | 2013-12-27 |
| EP2865011A1 (de) | 2015-04-29 |
| IN2014KN02866A (enExample) | 2015-05-08 |
| JP5985052B2 (ja) | 2016-09-06 |
| EP2865011B1 (de) | 2019-11-13 |
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