ES2772449T3 - Sistema de capas para células solares de película delgada con una capa de amortiguación de naxinisyclz - Google Patents

Sistema de capas para células solares de película delgada con una capa de amortiguación de naxinisyclz Download PDF

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Publication number
ES2772449T3
ES2772449T3 ES13729727T ES13729727T ES2772449T3 ES 2772449 T3 ES2772449 T3 ES 2772449T3 ES 13729727 T ES13729727 T ES 13729727T ES 13729727 T ES13729727 T ES 13729727T ES 2772449 T3 ES2772449 T3 ES 2772449T3
Authority
ES
Spain
Prior art keywords
layer
sodium
buffer layer
atomic
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES13729727T
Other languages
English (en)
Spanish (es)
Inventor
Thomas Happ
Stefan Jost
Jörg Palm
Stephan Pohlner
Thomas Dalibor
Roland Dietmüller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Original Assignee
CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd filed Critical CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Application granted granted Critical
Publication of ES2772449T3 publication Critical patent/ES2772449T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
ES13729727T 2012-06-20 2013-06-19 Sistema de capas para células solares de película delgada con una capa de amortiguación de naxinisyclz Active ES2772449T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12172699 2012-06-20
PCT/EP2013/062703 WO2013189968A1 (de) 2012-06-20 2013-06-19 SCHICHTSYSTEM FÜR DÜNNSCHICHTSOLARZELLEN MIT NaxInlSyClz-PUFFERSCHICHT

Publications (1)

Publication Number Publication Date
ES2772449T3 true ES2772449T3 (es) 2020-07-07

Family

ID=47002500

Family Applications (1)

Application Number Title Priority Date Filing Date
ES13729727T Active ES2772449T3 (es) 2012-06-20 2013-06-19 Sistema de capas para células solares de película delgada con una capa de amortiguación de naxinisyclz

Country Status (8)

Country Link
US (1) US9871155B2 (OSRAM)
EP (1) EP2865011B1 (OSRAM)
JP (1) JP5985052B2 (OSRAM)
KR (1) KR101742541B1 (OSRAM)
CN (1) CN105144401B (OSRAM)
ES (1) ES2772449T3 (OSRAM)
IN (1) IN2014KN02866A (OSRAM)
WO (1) WO2013189968A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382618B2 (en) * 2014-07-18 2016-07-05 UChicago Argnonne, LLC Oxygen-free atomic layer deposition of indium sulfide
US20170345651A1 (en) * 2014-12-22 2017-11-30 Bengbu Design & Research Instute For Glass Industry Method for producing a layer system for thin-film solar cells having a sodium indium sulfide buffer layer
KR101671002B1 (ko) 2015-07-24 2016-11-01 청주대학교 산학협력단 태양전지 반사방지막 및 그 제조방법
WO2025184813A1 (en) * 2024-03-06 2025-09-12 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Method and apparatus for producing a layer system for the manufacture of thin-film solar cells

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH11204810A (ja) * 1998-01-08 1999-07-30 Asahi Chem Ind Co Ltd 化合物半導体太陽電池
DE19956735B4 (de) 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
FR2820241B1 (fr) 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
EP3327170B1 (en) * 2007-09-12 2020-11-04 Flisom AG Apparatus for manufacturing a compound film
US20090235987A1 (en) 2008-03-24 2009-09-24 Epv Solar, Inc. Chemical Treatments to Enhance Photovoltaic Performance of CIGS
DE102008024230A1 (de) 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
JP2011204810A (ja) 2010-03-25 2011-10-13 Sumitomo Bakelite Co Ltd 波長変換部材および光起電装置

Also Published As

Publication number Publication date
EP2865011B1 (de) 2019-11-13
WO2013189968A1 (de) 2013-12-27
JP2015520521A (ja) 2015-07-16
US20150295105A1 (en) 2015-10-15
KR101742541B1 (ko) 2017-06-01
EP2865011A1 (de) 2015-04-29
KR20150013328A (ko) 2015-02-04
US9871155B2 (en) 2018-01-16
IN2014KN02866A (OSRAM) 2015-05-08
CN105144401B (zh) 2018-02-09
CN105144401A (zh) 2015-12-09
JP5985052B2 (ja) 2016-09-06

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