ES271622A1 - Un metodo de fabricar un dispositivo semiconductor - Google Patents

Un metodo de fabricar un dispositivo semiconductor

Info

Publication number
ES271622A1
ES271622A1 ES0271622A ES271622A ES271622A1 ES 271622 A1 ES271622 A1 ES 271622A1 ES 0271622 A ES0271622 A ES 0271622A ES 271622 A ES271622 A ES 271622A ES 271622 A1 ES271622 A1 ES 271622A1
Authority
ES
Spain
Prior art keywords
copper
semi
making
same
conductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0271622A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES271622A1 publication Critical patent/ES271622A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Die Bonding (AREA)
ES0271622A 1960-11-01 1961-10-30 Un metodo de fabricar un dispositivo semiconductor Expired ES271622A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3751360 1960-11-01

Publications (1)

Publication Number Publication Date
ES271622A1 true ES271622A1 (es) 1962-03-16

Family

ID=10397033

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0271622A Expired ES271622A1 (es) 1960-11-01 1961-10-30 Un metodo de fabricar un dispositivo semiconductor

Country Status (6)

Country Link
US (1) US3181981A (OSRAM)
CH (1) CH417774A (OSRAM)
DE (1) DE1166936B (OSRAM)
ES (1) ES271622A1 (OSRAM)
GB (1) GB998939A (OSRAM)
NL (1) NL270684A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448852A (en) * 1982-09-20 1984-05-15 Allied Corporation Homogeneous low melting point copper based alloys
US4485153A (en) * 1982-12-15 1984-11-27 Uop Inc. Conductive pigment-coated surfaces
CN104439282A (zh) * 2014-12-15 2015-03-25 湖南师范大学 一种针状纳米Cu-Sn-B合金及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520380A (OSRAM) * 1952-06-02
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
NL92060C (OSRAM) * 1953-10-26
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
DE1058632B (de) * 1955-12-03 1959-06-04 Deutsche Bundespost Verfahren zur beliebigen Verringerung des Sperrwiderstandes einer Legierungs-elektrode von Halbleiteranordnungen
DE1067936B (OSRAM) * 1958-02-04 1959-10-29
US2964397A (en) * 1958-07-28 1960-12-13 Walter M Weil Copper-boron alloys
US2986481A (en) * 1958-08-04 1961-05-30 Hughes Aircraft Co Method of making semiconductor devices

Also Published As

Publication number Publication date
NL270684A (OSRAM)
US3181981A (en) 1965-05-04
GB998939A (en) 1965-07-21
CH417774A (de) 1966-07-31
DE1166936B (de) 1964-04-02

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