ES2534667T3 - Circuito de control electrónico que comprende transistores de potencia y procedimiento para supervisar la vida útil de los transistores de potencia - Google Patents

Circuito de control electrónico que comprende transistores de potencia y procedimiento para supervisar la vida útil de los transistores de potencia Download PDF

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Publication number
ES2534667T3
ES2534667T3 ES11794061.9T ES11794061T ES2534667T3 ES 2534667 T3 ES2534667 T3 ES 2534667T3 ES 11794061 T ES11794061 T ES 11794061T ES 2534667 T3 ES2534667 T3 ES 2534667T3
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Spain
Prior art keywords
power transistors
ttest
saturation voltage
reference transistor
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES11794061.9T
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English (en)
Inventor
Helmut Lipp
Günter Haas
Martin BÜRKERT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebm Papst Mulfingen GmbH and Co KG
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Ebm Papst Mulfingen GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Ebm Papst Mulfingen GmbH and Co KG filed Critical Ebm Papst Mulfingen GmbH and Co KG
Application granted granted Critical
Publication of ES2534667T3 publication Critical patent/ES2534667T3/es
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/40—Testing power supplies
    • G01R31/42—AC power supplies
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H02M7/53875—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Control Of Electric Motors In General (AREA)

Abstract

Circuito de control electrónico (1) para un dispositivo eléctrico, en particular diseñado como un sistema electrónico de comunicación (2) de un motor conmutado electrónicamente (M), que tiene una pluralidad de transistores de potencia (T1 - T6), los cuales están controlados en un modo de funcionamiento para controlar el dispositivo, caracterizado por un transistor de referencia similar, adicional (Ttest) el cual no está cargado en el modo de funcionamiento de los transistores de potencia (T1 - T6) y está instalado o formado junto con los transistores de potencia (T1 - T6) en un soporte o sustrato común y por medio de la aplicación al transistor de referencia (Ttest) y a por lo menos uno de los transistores de potencia (T1 - T6) respectivamente una corriente de prueba en un modo de prueba y para la medición de la tensión de saturación asociada respectiva (UCE sat) y para la evaluación de una diferencia de tensión de saturación que resulta a partir de las tensiones de saturación medidas (UCE sat) del transistor de referencia (Ttest) y el respectivo transistor de potencia (T1 - T6) teniendo en cuenta la temperatura que prevalece del soporte/sustrato durante la medición como un criterio para un proceso de envejecimiento y una vida útil restante esperada de los transistores de potencia (T1 - T6), en el que están provistos medios adicionales para la evaluación de una velocidad de cambio de las diferencias de tensión de saturación grabadas en cada uno de los modos de prueba consecutivos respectivos.

Description

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Claims (1)

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ES11794061.9T 2011-11-21 2011-11-21 Circuito de control electrónico que comprende transistores de potencia y procedimiento para supervisar la vida útil de los transistores de potencia Active ES2534667T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/070594 WO2013075733A1 (de) 2011-11-21 2011-11-21 Elektronische ansteuerschaltung mit leistungstransistoren sowie verfahren zur lebensdauer-überwachung der leistungstransistoren

Publications (1)

Publication Number Publication Date
ES2534667T3 true ES2534667T3 (es) 2015-04-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
ES11794061.9T Active ES2534667T3 (es) 2011-11-21 2011-11-21 Circuito de control electrónico que comprende transistores de potencia y procedimiento para supervisar la vida útil de los transistores de potencia

Country Status (5)

Country Link
US (1) US9529038B2 (es)
EP (1) EP2773930B1 (es)
CN (1) CN104053976B (es)
ES (1) ES2534667T3 (es)
WO (1) WO2013075733A1 (es)

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DE102013211038B3 (de) * 2013-06-13 2014-10-16 Siemens Aktiengesellschaft Bereitstellen einer Information über einen Alterungszustand eines Halbleiterbauelements
DE102013012133A1 (de) * 2013-07-19 2015-01-22 Liebherr-Components Biberach Gmbh Verfahren zur Überwachung wenigstens eines IGBTs auf Alterung innerhalb einer Arbeitsmaschine
EP2829646B1 (en) * 2013-07-24 2017-09-06 STÄUBLI BAYREUTH GmbH Weft insertion system and weaving machine comprising such a system
CN104251965B (zh) * 2014-09-24 2017-07-04 河北工业大学 一种igbt动态性能测试装置及其运行方法
CN104390715B (zh) * 2014-10-15 2017-02-15 南通大学 一种温度转换方法以及低功耗高精度集成温度传感器
EP3109649B1 (en) * 2015-06-25 2019-08-07 ABB Schweiz AG Aging determination of power semiconductor device in electric drive system
EP3118638B1 (en) 2015-06-25 2019-08-07 ABB Schweiz AG Temperature estimation in power semiconductor device in electric drive system
CN108120915B (zh) * 2017-12-15 2020-05-05 京东方科技集团股份有限公司 应用于显示面板的老化处理方法及老化处理系统
US20190250205A1 (en) * 2018-02-13 2019-08-15 GM Global Technology Operations LLC Thermal model based health assessment of igbt
CN109188232B (zh) * 2018-09-06 2021-04-27 河北工业大学 一种igbt模块状态评估与剩余寿命预测模型的构建方法
CN110907787B (zh) * 2018-09-17 2022-07-08 国网浙江省电力公司 一种igct驱动电路高温特性批量检测装置及方法
CN108919085B (zh) * 2018-10-17 2024-05-31 北京交通大学 Igbt老化测试电路及方法
JP7118019B2 (ja) * 2019-02-05 2022-08-15 三菱電機株式会社 半導体モジュール、および半導体モジュールの寿命予測システム
JP7118940B2 (ja) * 2019-10-31 2022-08-16 株式会社日立産機システム 圧縮機、監視システム、及び圧縮機の監視方法
CN112713599B (zh) * 2020-12-17 2023-03-03 郑州轻工业大学 分布式电源电压支撑能力的综合评价方法
CN117406055A (zh) * 2023-10-24 2024-01-16 广州赛睿检测设备有限公司 一种可换向高温反偏老化试验系统

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DE19610065A1 (de) 1996-03-14 1997-09-18 Siemens Ag Verfahren zur Abschätzung der Lebensdauer eines Leistungshalbleiter-Bauelements
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Also Published As

Publication number Publication date
US9529038B2 (en) 2016-12-27
CN104053976A (zh) 2014-09-17
US20140253170A1 (en) 2014-09-11
WO2013075733A1 (de) 2013-05-30
EP2773930B1 (de) 2015-01-28
EP2773930A1 (de) 2014-09-10
CN104053976B (zh) 2016-01-27

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