ES2349453T3 - METHOD AND APPLIANCE FOR MANUFACTURING A SEMICONDUCTOR DEVICE. - Google Patents

Abstract

Method of manufacturing a semiconductor device by forming a thin film of a substrate (10), comprising the steps of: (a-i) washing the substrate (10) with a washing liquid, by using a brush; (a-ii) rinse the substrate (10) brush wash; and (a-iii) wash the rinsed substrate using ultrasonic waves; (b) extracting the washed liquid from the substrate (10), in a solution extraction section (2), blowing compressed air to the washed substrate; and (c) immediately transfer the substrate (10) from the solution extraction section (2), to a film forming section (3), without performing another step, in which a thin film is formed on the substrate

Description

The present invention relates to a method and an apparatus for manufacturing a semiconductor device made by forming a thin film on a substrate, such as a thin film photovoltaic module.

To make a thin film photovoltaic module, for example, a thin film such as a semiconductor film or a metal film is formed on a substrate made of glass, and with a transparent electrode formed therein.

When the thin film is formed on the substrate, particles can be attached to the substrate. If this occurs, defects will develop. Therefore, the substrate is usually washed before the film is formed on the substrate, to remove the particles.

When the substrate is allowed to stand and therefore it dries, the washing liquid attached to the substrate can form a watermark (stain). Therefore, the substrate is forcedly dried after washing.

To dry the washed substrate, a cleaning oven is used with a conventional method. The cleaning oven is designed so that clean air is introduced into the interior. In the cleaning oven, the air is heated by a heater and put into circulation.

Therefore, if the washed substrate is placed in the cleaning oven, it can be dried with heated air circulating in the cleaning oven.

As indicated above, the cleaning oven is designed to dry the substrate while circulating the heated air, the oven being clean and, therefore, the air gradually contains particles that remain in the cleaning oven, even if the air was clean when it was introduced into the cleaning oven.

EP 0 408 216 refers to a process for manufacturing semiconductor integrated circuit devices, in which the dry process and the wet process are carried out continuously for the manufacture of the wafers, and the wafers are transferred between processes under vacuum conditions or in a purge gas, without allowing them to come into contact with the outdoors, to avoid adverse effects that would be caused by the outdoors. A washing unit performs a centrifuge wash, and a drying unit performs a centrifugal drying.

US 5 762 749 relates to an apparatus for removing a treatment liquid from the main surfaces of a substrate that has been subjected to a wet surface treatment, and includes a transport device for transporting the substrate, a first device for gas jet having a first jet opening to launch a gas jet to a first upper, main surface of the substrate transported by the transport device, and a liquid extraction chamber to prevent the treatment liquid extracted from the main substrate surfaces are dispersed to the environment, the liquid extraction chamber having a substrate inlet and a substrate outlet.

Therefore, it is easy for the particles to attach to the dried substrate in the cleaning oven. Therefore, defects in the thin film formed in the substrate are likely to develop.

An object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device, characterized in that the washed substrate is without contamination while it is being dried.

The object of the invention is described in claims 1 and 7.

In the method, the substrate is dried with clean air, blowing compressed air into the substrate. The contamination of the substrate in the drying process can be prevented.

This summary of the invention does not necessarily describe all the necessary features, so that the invention can also be a secondary combination of these described features.

The invention can be better understood from the following detailed description, taken together with the accompanying drawings, in which:

Figure 1 is a view showing an apparatus for manufacturing a device

semiconductor, according to a first embodiment of the present

invention;

Figure 2 is a schematic view showing the wash section of the

apparatus; Figure 3 is a schematic plan view of the extraction section of liquid the apparatus; Figure 4 is a side view of the liquid extraction section; Figure 5 is a schematic view of the film forming section, of the apparatus; Figure 6 is a cross-sectional view of the substrate, with a film thin subject to engraving; Figure 7 is a schematic side view of a chord wash unit with a second embodiment of the invention; Figure 8 is an enlarged view of part A of Figure 7; Figure 9 is a schematic perspective view of the blower mechanism air of the washing unit; Figure 10 is a schematic perspective view of a mechanism air blower according to a third embodiment of the invention, Figure 11 is a plan view of a liquid extraction section of according to a fourth embodiment of the present invention; Y Figure 12 is a side view of the liquid extraction section. The embodiments of the present invention will be described by reference.

to the attached drawings.

Figure 1 shows an apparatus for manufacturing a semiconductor device, which is the first embodiment of the invention. The apparatus has a washing section 1, a liquid extraction section 2, and a film forming section 3.

The washing section 1 is designed to wash a glass substrate 10 having a transparent conductive film formed thereon and used as an electrode film, as shown in Figures 2, 3 and 4. The substrate 10 is a component of a semiconductor device, more specifically a thin film type photovoltaic module. The substrate is washed in the washing section 1, and dried in the liquid extraction section 2. Next, a thin film, such as a semiconductor film or a metal film, is formed on that surface of the substrate on which an electrode film (hereinafter referred to as "top surface") is provided, in the section 3 film formation.

As shown in Figures 2 and 3, a transfer mechanism 5 is provided in the washing section and in the liquid extraction section 2. The transfer mechanism 5 comprises a series of transfer rollers 4. The transfer mechanism 5 transfers the substrate from the washing section 1, to the liquid extraction section 2.

As shown in Figure 2, the wash section 1 comprises a brush wash section 6, a rinse section 7 and an ultrasonic wash section 8. Sections 6, 7 and 8 are arranged in the transfer direction of the substrate 10.

The brush wash section 6 has a pair of wash brushes 9 and an injector body 11. The brushes 9 are in contact respectively with the upper and lower surfaces of the substrate 10, which is to be transferred by the transfer roller 4. The injector body 11 supplies washing liquid such as detergent or pure water, to a position where the washing brushes 9 contact the substrate 10. The upper surface of the substrate 10 is brush washed with the washing liquid.

The injector body 11 is a tube 11a longer than the width of the substrate 10. The tube 11a has a series of injection holes 11b arranged at predetermined intervals.

In this embodiment, the washing liquid is supplied by the injector body 11 only to both upper and lower surfaces of the substrate 10 on which the thin film is to be formed. However, the injector body 11 could be located only above the substrate 10, to wash only the upper surface.

The rinsing section 7 has a rinsing vessel 12. The rinsing vessel 12 has a loading hole 13 and a discharge hole 14, the loading hole 13 being made in the side wall located upstream from the transfer path of the substrate 10. The discharge hole 14 is made in the opposite side wall, located downstream of the transfer path. The loading hole 13 and the discharge hole 14 are formed at almost the same level

that the substrate 10 to be transferred by the transfer roller 4.

Inside the rinse container 12, the transfer roller 4 constituting the transfer mechanism 5 is arranged at the same level of transfer roller 4 disposed outside. The mechanism 5 can transfer the substrate 10 through the loading hole 13 to the rinse vessel 12, and from the container 12 through the discharge hole 11, as shown by arrows in Figures 1 and 2.

By means of the supply injector (not shown), rinsing liquid such as pure water is supplied to the rinsing container 12. The rinsing liquid flows out of the rinsing container 12, through the loading hole 13 and the discharge hole 14. The rinsing liquid is supplied to the rinsing vessel 12, at a rate equal to or slightly greater than the rate at which the liquid exits through the loading hole 13 and the discharge hole 14.

With this mechanism, the surface of the rinse liquid in the rinse container 12 can be maintained at a level higher than the substrate 10. In this way, the substrate 10 is transferred into the rinse liquid. Therefore, the upper surface of the substrate 10 passing through the rinse container 12 is rinsed without failures with the rinse liquid. In addition, the particles extracted from the substrate 10 by the rinse treatment, rarely remain in the rinse container

12. This is because the rinse liquid is always allowed to flow out of the loading hole 13 and the discharge hole 14.

In this embodiment, a single rinse container is used. However, a series of rinse containers can be arranged in the transfer direction of the substrate 10, to more reliably rinse the washed substrate 10 with the washing liquid.

The substrate 10 rinsed in the container 12 is washed in the ultrasonic washing section 8, which has a washing container 15. The washing container 15 has a loading hole 16 made in the side wall located upstream, in the path of substrate transfer 10. The container 15 has a discharge orifice 17 made in the opposite side wall, located downstream of the transfer path. Both holes 16 and 17 are substantially at the same level as the substrate 10 to be transferred.

Inside the wash container 15, the transfer rollers 14 are arranged in the same manner as in the rinse container 12. In the lower part an ultrasonic generator 18 is provided, to generate an ultrasonic vibration of approximately 20 to 40 kHz. As the washing liquid, pure water is supplied to the washing vessel 15. The ultrasonic vibration generated by the sonic wave generator 18 is applied to the washing liquid.

The rate of delivery of the washing liquid is almost equal to, or slightly greater than the rate at which the liquid flows out through the loading hole 16 and the discharge hole 17. As mentioned above, the surface of the liquid wash in the wash container 15 is slightly higher than the upper surface of the substrate 10 to be transferred by the transfer rollers 4. Therefore, both upper and lower surfaces of the substrate 10 can be washed by the washing liquid subjected to vibration by the ultrasonic wave.

Furthermore, since part of the washing liquid flows from the loading hole 16 and the discharge hole 17, the particles extracted from the substrate 10 by ultrasonic washing can also flow out.

The substrate 10 washed in the ultrasonic washing section 8, is dried in the liquid extraction section 2, shown in Figures 3 and 4. The solution extraction section 2 is constituted by a pair of air blades 21 oriented towards the upper and lower surfaces of the substrate to be transferred. Through a tube 19, compressed air cleaned by a filter is applied to the air knife

twenty-one.

On the tube 19, a heater 20 for heating the compressed air and an ionizing part 23 for ionizing the compressed air are arranged. Note that the compressed air is adjusted to a pressure of about 5 kg / cm2, by means of a pressure control valve 24, coupled to the tube 19. The air blades 21 are longer than the width of the substrate 10. As shown in figures 3 and 4, each air blade 21 has a groove 22 that extends along almost the entire length of the blade, and opens at one edge thereof. The slots 22 of the air blades 21 are oriented towards the upper or lower surface of the substrate 10, respectively.

Each air knife 21 is inclined at a certain angle α, relative to the transfer direction X of the substrate. Compressed air is applied through the groove 22 in a Z direction, inclined at an angle β with respect to the V direction perpendicular to the transfer direction X, as shown in Figure 3

The compressed air applied to each air knife 21 is blown towards the upper or lower surface of the substrate 10, from the hole 22 of the groove. Thus, the washing liquid on the upper and lower surface of the substrate 10 is pushed towards the rear edge of the substrate 10, in the direction of transfer of the substrate, as indicated by an arrow Y in Figure 3. As a result , the washing liquid drops dropwise and gently from the end of the substrate. Therefore, the washing liquid is extracted from the substrate 10.

The compressed air to be applied to the air knife is heated by the heater 20 to a temperature greater than the ambient temperature, for example up to about 40 to 50 ° C. Accordingly, the washing liquid is extracted from the substrate 10 by the force of the compressed air, and the substrate 10 is dried with the heat of the compressed air. Therefore, the substrate 10 can be dried without failures efficiently.

Even if the compressed air is not heated, the substrate can be dried to a predetermined degree. On the other hand, if the compressed air is ionized and substrate 10 applied, the substrate 10 can be prevented from being electrically charged during the drying process. As a result, static electricity will not be generated, nor will particles be attached to the substrate 10. Therefore, the substrate 10 is not contaminated during the drying process.

The dried substrate 10 in the solution extraction section 2 is immediately transferred to the film forming section 3. More specifically, the substrate 10 is unloaded by the transfer rollers 4 and transferred to the film forming section 3, by means of a robot (not shown). In other words, the substrate 10, from which the washing liquid has been removed, is transferred directly to the film forming section 3, without being subjected to any other process.

The substrate 10 dried in the liquid extraction section 2 and discharged therefrom is continuously loaded in the film formation section 3. Therefore, the chances that the particles in the atmosphere bind to the dry substrate 10 are reduced. The substrate 10 is transferred to the film formation process 3, keeping clean.

In addition, the substrate 10 is dried with compressed air, not in a cleaning oven as in the conventional method. Therefore, the drying process can be carried out immediately after the washing process.

Therefore, in the case where the washed substrates 10 are dried in batches in a cleaning oven, the time between the washing process and the drying process can be reduced. Therefore, it is possible to prevent the washing liquid applied to the substrate 10 during the washing process from partially drying out before the drying process by making a watermark (stain) on the substrate

10.

The film-forming section 3 has a film-forming chamber 25, as shown in Figure 5. The film-forming chamber 25 is used to form a thin film on the upper surface of the substrate 10, through a plasma process (CVD). The film-forming chamber 25 has a loading hole 26 on one side, and a discharge hole 27 on the opposite side. Arranged in the film-forming chamber 25, there is a table 28 and a high frequency electrode 29. Table 28 incorporates a heater 28a. The electrode 29 is arranged in front of the upper surface of the table 28.

In addition, two supply tubes 31 and 32 are connected to the top of the film forming chamber 25. The first supply tube 31 is used to supply gaseous matter. The second supply tube 32 is arranged to supply an inert gas to the film-forming chamber 25. An exhaust pipe 34 having a vacuum pump 33 is connected to the bottom of the chamber 25.

In the loading hole 26 of the film-forming chamber 25, a load-blocking chamber 35 is arranged. In the discharge hole 27 of the chamber 25, a discharge lock chamber 36 is arranged. Chambers 35 and 36 have loading holes 35a and 36a and discharge holes 35b and 36b, respectively.

A preheater 37 and a support table 38 are arranged in the load blocking chamber 35. An exhaust duct 40 having a vacuum pump 39 is

connected to the bottom of the load blocking chamber 35.

The discharge port 35a of the load-blocking chamber 35, and the loading port 26 of the film-forming chamber 25, are connected tightly to the air by a first connection body 41. The discharge orifice 27 of the film-forming chamber 25, and the loading orifice 26 of the discharge-blocking chamber 36, are tightly connected to the air by means of a second connection body 42.

The loading orifices and the discharge orifices of the chambers 25, 35 and 36 are sealed in the air by means of valves 43. The first and second connection bodies 41 and 42 incorporate transfer robots (not shown). In addition, a mounting table 44 is disposed in the discharge lock chamber 36. An exhaust duct 46 having a vacuum pump 45 is connected to the bottom of the chamber 36.

When the substrate 10 dried in the liquid extraction section 2, is placed on the support table 38 in the loading block chamber 35, the loading hole 35a is closed and the loading block chamber 35 is depressurized. Simultaneously, the substrate 10 is preheated by the preheater 37. During preheating, the load blocking chamber 38 is depressurized by the vacuum pump 39.

When the substrate 10 is preheated, the loading opening 35a of the loading blocking chamber 38 is closed, and the discharge opening 35b is opened. Next, the robot disposed in the first connection body 41 enters the load blocking chamber 35 and receives the substrate 10 from the support table 38.

At the same time, the discharge orifice 35b of the load-blocking chamber 35 is closed in an air-tight manner, by means of the valve 43. Simultaneously, the loading orifice 26 of the film-forming chamber 25 is opened. The substrate 10 is preheated and placed on the table 28, in the film-forming chamber 25, by means of the robot arranged in the first connection body 41. Next, the robot moves back. Then, the loading hole 26 is closed, and the film forming chamber is depressurized by the vacuum pump 33

When the film forming chamber 25 is depressurized to a predetermined pressure, an inert gas is supplied from the second supply tube 32 to the chamber 25. Simultaneously, high frequency power is supplied to a high frequency electrode 29, activating inert gas The activated gas has a cleaning function. Therefore, the substrate 10 washed in the wash section 1 is still cleaned with the inert gas.

When the substrate 10 has been cleaned with the inert gas for a predetermined period, gaseous matter, instead of the inert gas, is supplied from the first supply tube 31 to the film-forming chamber 25. The gaseous matter is reacted in a plasma generated by supplying high frequency power to the high frequency electrode 29.

As a result, a solid substance generated in the reaction is deposited on the upper surface of the substrate 10, forming a thin film on the upper surface of the substrate 10.

The substrate 10 is washed in the washing section 1, and is then transferred to the solution extraction section 2, in which the substrate 10 is dried without contamination. Next, the substrate 10 is transferred to the film forming chamber 25.

Since no particles are contained in the thin film deposited on the substrate 10, it is possible to prevent defects in the thin film from developing. As a result, the semiconductor device can be manufactured with high performance.

In the case of a photovoltaic module with 50 cells connected in series, manufactured using a cleaning oven in a conventional drying process of the substrate 10, 40 cells are defective as the experiments show. In the case of the photovoltaic module according to the present invention, in which the substrate has been dried with compressed air, defects develop in only 10 cells or less.

To detect if a cell has defects or not, a reverse voltage is applied to the cell. If the particles are incorporated into the film during the film manufacturing process, they cause a short circuit. If defects have developed

or not, it can be determined depending on whether the applied voltage changes or not.

When the formation of the film on the substrate 10 is completed, the discharge opening 27, of the film forming chamber 25, is opened, and a robot is moved from the second connection body 42 and enters the chamber 25 of forming the film, and receiving the substrate 10. Simultaneously, the loading hole 36a of the discharge blocking chamber 36 is opened.

The robot loads the substrate 10, on which the film is formed in the film-forming chamber 25, in the discharge lock chamber 36, and mounts it on a mounting table 44. Next, the robot is removed to the second connection body 42. Simultaneously, the discharge opening 27 of the film forming chamber 25 and the loading opening 36a of the film forming chamber 36 are closed.

In this embodiment, the load blocking chamber 35 and the discharge blocking chamber 36 are connected tightly to the air, by the loading orifice 26 and in the discharge orifice 27 of the film-forming chamber 25, respectively. By virtue of this structural characteristic, the substrate 10 can be transferred without significantly degrading the depressurized state of the film-forming chamber 25.

The substrate 10 mounted on the mounting table 44 of the discharge blocking chamber 36, is removed by a robot (not shown) located outside the discharge hole 43 of the chamber 36. Next, the substrate 10 is subjected to the next process.

The present invention is not limited to the aforementioned embodiment. For example, a single brush wash unit, a single rinse unit or a single ultrasonic wash unit, all used in the wash section of the aforementioned embodiment can, however, each be replaced by a series of units.

An injector washing unit for applying the washing liquid to which it is vibrated ultrasonically, from the injector to the substrate, can be combined with the mentioned washing units.

On the upstream side of the film-forming chamber, in the film-forming section, a single load-blocking chamber is located, to preheat the substrate and maintain the reduced pressure state of the film-forming chamber. the movie. However, a series of load-blocking chambers can be used to continuously carry out a series of processes on the substrate, without waiting period, if the efficiency in the preheating of the substrate is improved, and if each of the Periods required for the washing section and the liquid extraction section is equal to the period required for film formation, in the film formation section.

The semiconductor device of the present invention is not limited to a photovoltaic module. On the contrary, it can be a liquid crystal display panel and a semiconductor wafer. In summary, the present invention can be applied to any case in which a thin film is formed on the substrate.

In section 3 of the film formation, shown in Figure 1, a transparent conductive film 51, a semiconductor film 52 for use in photovoltaic conversion, and an electrode film 53 of the rear surface, are stacked on top of each other. the substrate 10, as shown in Figure 6. When these films are stacked, each of the films is recorded as indicated by an engraving line 54 in the figure. Engraving lines are formed by a laser beam.

When the thin film is recorded with the laser beam, waste particles are generated. The particles bind to the substrate 10 and remain therein. The particles that remain in the substrate 10, sometimes cause defects in the thin film formed on it.

It is necessary to wash the substrate 10 after the transparent conductive film 51 is formed and etched, after the semiconductor film 52 is formed on the transparent conductive film 51 and etched, and after the surface electrode is formed and etched rear 53.

Figures 7 to 9 show a second embodiment of the present invention. This embodiment is a washing unit, for washing the substrate 10 after the transparent conductive film 51 is formed on the substrate 10 and recorded, after the semiconductor film 52 for photovoltaic conversion is formed and etched, and formed and Engraved electrode film 53 from the rear surface.

Next, the washing unit will be explained. Figure 7 is a schematic vertical longitudinal section view of the washing unit for the substrate 10 for a photovoltaic module. Figure 8 is an enlarged sectional view of part A of Figure 7. Figure 9 is a perspective view of an air blower mechanism.

The washing unit for washing the substrate 10 has a base 111. A washing container 112 is arranged on the base 111. A loading hole 113 for the substrate 10 is made in the side wall, in the washing container 112. The wall at the other end has a discharge hole 114. A roller conveyor 115 is provided as a transfer mechanism, both inside and outside the washing vessel 112, substantially at the same level as the loading hole 113 and the discharge hole 114 The roller conveyor 115 transports the substrate 10 horizontally. While the substrate 10 is being transported in this way, its surface, on which the transparent electrode 51 is formed, remains turned upwards.

The rollers 115a that constitute the roller conveyor 115, are rotated by a rotation drive mechanism (not shown). With this rotation, the substrate 10 is loaded into the wash container 112 through the loading hole 113, and is discharged through the discharge hole 114.

A loading section 116 is arranged in the loading hole 113 of the wash container 112, for loading the unwashed substrate 10. A discharge section 117 is arranged in the discharge hole 114, to discharge the washed substrate 10. The roller conveyor 115 extends from the loading section 116 to the unloading section 117.

The lower part of the wash container 112 has a pure water supply hole 118 for supplying, for example, pure water W. The pure water hole 118 is connected to a source of pure water (not shown). In addition, an ultrasonic oscillator 119 (0.2 to 1.0 W / cm2 outlet) is disposed inside the bottom of the wash container 112.

A series of rotating brushes 120 with high-pressure air injectors 121 are arranged above the roller conveyor 115. The rotation brush 120 consists of a rotation axis 120a, which is rotated by means of the rotary drive mechanism (not shown), and of nylon bristles 120b placed around the axis of rotation 120a and configured in the form of a roller.

The rotating brush 120 is arranged to remove particles such as debris and burrs that remain inside the engraving line 54, rubbing the substrate 10 and the engraving line 54 with the tips of the bristles 120b on them. Pressurized air is applied to the rubbed and etched part by means of the rotation brush 120, from the high pressure air injector 121, thereby eliminating the particles.

In addition, an air knife 122 is provided in the discharge port 114 of the wash container 112, to evacuate pure water W and particles from the upper and lower surface of the substrate 10

Note that the purity of the water present in the source of pure water supply, or in an outlet of a pure water production unit, is as follows:

Resistivity: 16 to 18 M · cm (25 ° C)

Number of fine particles of 0.2 µm or more: 100 to 150 / ml.

Number of viable bacteria: 0 to 10 / ml.

Organic material: 0.5 to 1.0 ppm.

As shown in Figures 8 and 9, an air blower mechanism 123 is provided in the discharge section 117 of the wash container 112, for blowing high pressure air to an outer peripheral part 10a of the substrate 10 to be transferred by the roller conveyor 115.

The air blower mechanism 123 has a main body 125 of injectors. The body 125 has the same rectangular structure shape as the outer peripheral part 10a of the substrate 10, and has an air passage 124 inside. The lower surface of the main nozzle body 125 has a series of injector holes 126, for spraying high pressure air to the outer peripheral part 10a of the substrate 10.

The air blower mechanism 123 is disposed above the substrate 10 located in the roller conveyor 115. The air duct 124 is connected to a high pressure air source (not shown), by the air supply tube 127.

It will be described how the substrate 10 is washed by the washing apparatus mentioned above. Pure water W is supplied through the pure water supply hole 118, to the washing vessel 112. When the pure water W reaches the level of the loading hole 113 and the discharge hole 114, the water W begins to flow out of through the loading hole 113 and the discharge opening 112. Therefore, the level of pure water W in the washing vessel 112 remains constant. When power is supplied to ultrasonic oscillator 119, ultrasonic vibration is transmitted to pure water W.

When the substrate 10 is mounted on the roller conveyor 115 of the discharge section 116, the substrate 10 is transferred to the loading hole 113. When the substrate 10 is displaced in the pure water W of the wash container 112 by the conveyor of rollers 115, particles such as debris and burrs are extracted from the etching line 54 of the substrate 10. This is because the pure water is vibrated ultrasonically. The removed particles are discharged together with the water that emanates, or precipitates in pure water W. Therefore, no particles are reattached to the substrate 10. Therefore, it is possible to effectively reduce the contamination of the wash container 111 with particles.

The substrate 10 is washed while it is transferred. Therefore, a series of substrates 10 are continuously washed. In addition, the entire surface of the substrate can be vibrated uniformly and ultrasonically, since the substrate 10 moves on the ultrasonic oscillator 119.

The washed substrate 10 is discharged from the discharge hole 114 of the wash vessel 111, to the discharge section 117. The pure water W and the particles are extracted from the upper and lower surface of the substrate 10 discharged from the discharge hole 114, when the high pressure air from the air knife 122 is blown. The substrate 10 can be washed and dried continuously.

When the washed substrate 10 is transported to the discharge section 117 by the roller conveyor 115, high pressure air is blown to the substrate 10 from the blowing injector holes 116, of the air blowing mechanism. The main body 125 of injectors has the same rectangular structure shape as the outer peripheral part of the substrate 10.

Since the high pressure air is blown strongly to the periphery 10a of the substrate 10, water droplets can be extracted from the outer surface 10a of the substrate 10, that is, from the four sides thereof.

The high pressure air can be blown to the periphery 10a of the substrate 10, while the substrate 10 is being transferred by the roller conveyor 115.

When the substrate 10 faces the air blower mechanism 123, the roller conveyor 115 stops at a stop zone B, shown in Figure 8. Therefore, high pressure air can be intensively blown to the periphery 10a of the substrate 10.

Note that the air blower mechanism 123 (not shown) can be displaced for a predetermined time, synchronized with the movement of the substrate 10 transferred by the roller conveyor 115.

Figure 10 shows a modified example of the air blower mechanism 108, according to a third embodiment.

In the discharge section 117 of the wash container 112, pulleys 130a, 130b, 130c of the upper platform are arranged for a first corner part 129a, a second corner part 129b and a third corner part 129c, respectively. An endless belt 131 of the upper platform is wound around these pulleys of the upper platform 130a, 130b, 130c.

The pulleys 132a, 132b, 132c of the lower platform are arranged respectively in the parts oriented towards the first corner part 129a, a quarter corner 129d and the third corner part 129c. An endless belt 133 of the lower platform is wound around the pulleys 132a, 132b, 132c of the lower platform.

The pulley 130a of the upper platform and the pulley 132a of the lower platform, which are arranged in the first corner portion 129a, are coaxially supported with the pulley 130c of the upper platform and the pulley 132c of the lower platform, which are arranged in the third part of corner 129c. A motor 134 is connected to the pulley shaft 130a of the upper platform and the pulley 132a of the lower platform, both arranged in the first corner portion 129.

The air application injectors 135a 135b are respectively coupled to parts of the endless belt 131 of the upper platform and the endless belt 133 of the lower platform. The 135a and 135b air injectors are connected to a high pressure air supply source.

Since the air blower mechanism 128 is constructed in this way, the endless belt 131 of the upper platform and the endless belt 133 of the lower platform are displaced in the directions indicated by arrows, respectively, when the upper pulley 130a and the lower pulley 132a is rotated by the rotation of the motor 134.

Therefore, the air spray nozzle 135a moves along the substrate 10 defining the second corner portion 129b of the substrate 10. The air application nozzle 135b moves along the two sides of the substrate 10 which define the fourth corner portion 129d of the substrate 10. When high pressure air is blown from the application injectors 135a and 135b, the high pressure air is blown intensively towards the periphery 10a of the substrate 10, that is, to the four surfaces sides of it. Therefore, it is possible to evacuate water droplets from the periphery 10a of the substrate 10.

The high pressure air is blown to the periphery 10a of the substrate (ie, to the four lateral surfaces thereof), while the substrate 10 is transferred by the roller conveyor 115. Alternatively, the air can be intensively blown to the periphery 10a of the substrate 10, stopping the roller conveyor 115 in the stop zone B, when the substrate 10 faces the air blower mechanism 123.

In the third embodiment, the air application injectors 135a and 135b are displaced along the periphery 10a of the substrate 10 (i.e., the four lateral surfaces) by means of pulleys and endless belts. As a mechanism to drive the injectors 135a and 135b, a spherical screw mechanism and a linear motor can be used. However, the drive mechanism is not limited to this type.

In the second and third embodiments, the roller conveyor 115 is used to transport the substrate 10. The substrate can be transferred by an endless belt permeable to water, made in the form of a mesh or scale.

The washing liquid is not limited to pure water W. Tap water or a chemical washing liquid can be used. The chemical washing liquid used may be water containing a detergent or an organic solvent such as acetone, methanol, ethanol, trichlorethylene or freon.

In the second and third embodiments shown in Figures 7 to 10, a substrate having a transparent conductive film with an etching line formed by a laser beam is washed on a surface. The substrate to be washed is not limited to this. The washing apparatus according to the second and third embodiments, can wash a substrate having a semiconductor film and an electrode on the back surface, successively formed on a transparent conductive film and etched by a laser beam.

The air blower mechanisms of the second and third embodiments can be arranged downstream with respect to the liquid extraction section 2 of the first embodiment. With this arrangement, the washing liquid can be extracted without failures, even if washing liquid remains on the periphery of the substrate after the substrate has been dried in the liquid extraction section 2.

Figures 11 and 12 show a liquid extraction section 210 according to a fourth embodiment, which may be used in place of the liquid extraction section 2 of the first embodiment and the water extraction air knife 122 of The second embodiment.

As shown in Figure 11, the substrate 10 is washed, after the transparent conductive film 51, the semiconductor film 52, or the electrode film 53 of the rear surface, are laser etched. The substrate 10 is transferred to the liquid extraction section 210 by the transfer roller 206, with the engraving lines 55 (only some engraving lines are shown, in Figure 11) in perpendicular arrangement to the transfer direction indicated by the date X.

In the liquid extraction section 210, 3 air blades 207a, 207b and 207c are arranged in the order mentioned, from the top to the bottom. The air blades are inclined in the direction perpendicular to the transfer direction X of the substrate. In other words, they cover the substrate 10 over the entire width thereof.

As Figure 11 is shown, the distance D from one end of the air knife 207a to the other end of the air knife 207c, along the transfer direction of the substrate, exceeds the interval R of the rollers of adjacent transfer 206. In addition, the air blades are inclined more towards the direction perpendicular to the transfer of the substrate, than in the case where a single blade is used.

The adjacent air blades (207a and 207b, or 207b and 207c in Figure 11) are arranged with their closest end portions spatially spaced apart from each other, in the direction of substrate transfer, and overlapping in the direction perpendicular to the direction of substrate transfer. More specifically, as shown in Figure 11, the lower end of the air knife 207a is spatially separated from the upper end of the air knife 207b, in an interval S in the direction of substrate transfer. In addition, the lower end of the air knife 207a and the upper end of the air knife 207b overlap, as shown by the letter L in Figure 11. The liquid is extracted by blowing compressed air to the substrate 10 from the injectors of slot 208, each of which extends over the entire length of the air blades 207a, 207b and 207c, in the direction indicated by a date P in Figure 11.

In this embodiment, 3 air blades 207a, 207b and 207c are arranged above the interval R between adjacent transfer rollers 206, and very inclined with respect to the direction perpendicular to the transfer direction of the substrate. In addition, the overlapping part L extends in the direction perpendicular to the transfer direction of the substrate. With this arrangement, compressed air can be blown reliably into the area corresponding to the interval R of the transfer roller 206. Therefore, the liquid from the substrate 10 can be sufficiently extracted.

Since the air knife is very inclined, sufficient force is generated to evacuate the washing liquid from the substrate 10, in the direction perpendicular to the transfer direction of the substrate.

First, the washing liquid is separated through grooves engraved lines 55 through the compressed air applied from the injector 208 of the knife 207a air. When the substrate 10 reaches the intermediate part (range S) between the air knife 207a and the air knife 207b, along the transfer direction of the substrate, the compressed air is no longer applied to the washing liquid. Compressed air is not applied to the washing liquid for a short period of time, and during this period no force is applied to the washing liquid.

However, just before the washing liquid begins to flow in the opposite direction, the compressed air applied from the injector 208 of the air knife 207b evacuates the washing liquid through the grooves of the engraving lines 55. The liquid is similarly evacuated by air blades 207b and 207c.

When compressed air is applied, the washing liquid forms waves in the grooves of the engraving lines 55. The waves are not too high. Therefore, when the waves are reduced in the intermediate zone (interval S) between the air blades, without rupture or dispersion, the washing liquid is caused to flow again, by means of the compressed air blowing from the next blade air. With this mechanism, the washing liquid is successfully extracted from the substrate 10.

It is possible to improve the efficiency of the photovoltaic conversion of the photovoltaic module, thanks to the fact that the waves of washing liquid that contain particles do not break by moistening the area from which the water has been completely extracted.

In the photovoltaic modules manufactured using the substrate 10 washed with the method according to this embodiment, the current / voltage characteristics were verified using a 1.5 solar simulator (AM = 1.5, 100 mM / cm2). As a result, the load factor (FF) was 67%. On the other hand, the photovoltaic module manufactured using the substrate 10 washed by a conventional method, had a load factor (FF) of 65%. Therefore, the washing method of this embodiment is effective by improving the photovoltaic conversion efficiency of the photovoltaic module.

"AM" as used herein, means "air mass" ("Air Mass"), which indicates a solar spectrum, and more specifically, the thickness of the atmospheric layer through which the sunlight. For example, AM is 0 in space and 1 exactly in Ecuador.

"FF" as used herein, means "load factor" ("Fill Factor"). The maximum value of V x I in curve VI of a photovoltaic module is denoted by "Pmax". FF is a value obtained by dividing Pmax by the product of multiplying the open circuit voltage (Voc) by the short-circuit current (Ise).

REFERENCES CITED IN THE DESCRIPTION

The list of references cited by the applicant is for the convenience of the reader only. It is not part of the European Patent document. Although special care has been taken in collecting references, errors or omissions cannot be ruled out and the EPO disclaims all responsibility in this regard.

Patent documents cited in the description:

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EP 0 408 216 A [0008]

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US 5 762 749 A [0009]

Claims (12)

1.-Method of manufacturing a semiconductor device by forming a thin film of a substrate (10), comprising the steps of: (a-i) wash the substrate (10) with a washing liquid, by using a brush; (a-ii) rinse the substrate (10) brush wash; Y (a-iii) wash the rinsed substrate using ultrasonic waves;

(b)

extract the washed liquid from the substrate (10), in a solution extraction section (2), blowing compressed air to the washed substrate; Y

(C)

Immediately transfer the substrate (10) from the solution extraction section (2), to a film-forming section (3), without performing another step, in which a thin film is formed on the substrate. 2. The method according to claim 1, wherein in step (b), the air

tablet to blow on the substrate is heated to a predetermined temperature. 3. The method according to claim 1 or 2, wherein in step (b), the compressed air to blow on the substrate is ionized. 4. The method according to claim 1, 2 or 3, wherein step (c) further comprises the step of heating the substrate to a predetermined temperature, before the thin film is formed on the substrate. 5. The method according to claim 1, 2 or 3, wherein the substrate from which the washing liquid has been extracted in step (b), is directly subjected to step (c) to form a film thin. 6. The method according to any of claims 1 to 4, wherein in step (c), the substrate is washed with an inert gas in the form of plasma, before the thin film is formed. 7.-Apparatus for manufacturing a semiconductor device with a film thin on a substrate (10), comprising: a washing section (1) for washing the substrate with a washing liquid; a liquid extraction section (2), to extract the washing liquid from the substrate by blowing compressed air to the washed substrate; Y a section (3) of film formation, to form a thin film on the substrate from which the washing liquid has been extracted, where the washing section (12) comprises a brush washing section (6), a rinse section (7), and an ultrasonic wash section (8), in the The substrate is washed. 8. The apparatus according to claim 7, wherein The air extraction section (2) has an air knife (21) which is inclined with respect to the direction perpendicular to the transfer direction of the substrate (10) and the vertical direction, to blow compressed air to the back of the section of substrate transfer. 9. The apparatus according to claim 8, characterized in that it further comprises a heater (20) for heating compressed air to be supplied to the air knife. 10. The apparatus according to claim 8 or 9, characterized in that it further comprises a ionization section (23) to ionize the compressed air supplied to the air knife (21). 11. The apparatus according to claim 7, 8, 9 or 10, wherein The liquid extraction section has at least two air blades (207a, 207b, 207c) located above and below the substrate to be transferred, inclined with respect to the direction perpendicular to the transfer direction of the substrate, and arranged so that the nearest ends of the adjacent air knives are spatially separated at a predetermined interval in the transfer direction of the substrate, and overlap over a predetermined distance in the direction perpendicular to the transfer direction of the substrate. 12. The apparatus according to any of claims 7 to 11, wherein The film-forming section (3) comprises a film-forming chamber (25), to form a film on the substrate, and a load-blocking chamber (35), in order to heat the substrate (10) to a predetermined temperature , before the film is formed in the film forming chamber (25). 13. The apparatus according to any of claims 7 to 12, wherein a first supply tube (31) is connected to the film-forming chamber, to supply a gaseous material to form a film, and a second supply tube (32), to supply an inert gas that is ionized, to a plasma before the movie is formed. Six sheets of drawings follow.