ES2223279A1 - Configuration for e.g. semi bridge of electronic circuits of commutation, has superior switch connected through diode with inferior switch, and inferior sinking connected through another diode to door of superior switch - Google Patents
Configuration for e.g. semi bridge of electronic circuits of commutation, has superior switch connected through diode with inferior switch, and inferior sinking connected through another diode to door of superior switchInfo
- Publication number
- ES2223279A1 ES2223279A1 ES200301650A ES200301650A ES2223279A1 ES 2223279 A1 ES2223279 A1 ES 2223279A1 ES 200301650 A ES200301650 A ES 200301650A ES 200301650 A ES200301650 A ES 200301650A ES 2223279 A1 ES2223279 A1 ES 2223279A1
- Authority
- ES
- Spain
- Prior art keywords
- switch
- diode
- inferior
- bridge
- configuration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006378 damage Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
Landscapes
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
Configuración de semipuente o puente no cortocircuitable para circuitos electrónicos de conmutación.Semi-bridge or bridge configuration no Short circuit for electronic switching circuits.
La siguiente invención, según se expresa en el enunciado de la presente memoria descriptiva, se refiere a una configuración de semipuente o puente no cortocircuitable para circuitos electrónicos de conmutación, siendo del tipo de circuitos electrónicos de conmutación en los que se utilizan configuraciones de las llamadas semipuente o puente, de forma que en la configuración que se presenta tiene por objeto evitar que se produzca un cortocircuito.The following invention, as expressed in the set forth herein, refers to a semi-bridge or non-short-circuit bridge configuration for electronic switching circuits, being of the type of circuits switching electronics in which configurations are used of the semipuente or bridge calls, so that in the configuration presented is intended to prevent produce a short circuit.
De esta forma, se trata de obtener una configuración de semipuente o puente en la que no se pueda producir un cortocircuito y con ello su destrucción, con el inconveniente que representa.This way, it's about getting a semi-bridge or bridge configuration where it cannot be produced a short circuit and with it its destruction, with the inconvenience represents.
En la presente memoria se describe una configuración de semipuente o puente no cortocircuitable para circuitos electrónicos de conmutación, cuyos circuitos electrónicos son de aplicación general en equipos, tales como fuentes de alimentación, UPS's, balastos electrónicos, control de motores, etc..This document describes a semi-bridge or non-short-circuit bridge configuration for electronic switching circuits, whose electronic circuits they are of general application in equipment, such as sources of Power, UPS's, electronic ballasts, motor control, etc..
Convencionalmente, los circuitos electrónicos de conmutación incorporan dispositivos o configuraciones de las denominadas semipuente o puente completo, los cuales están manejados por un circuito de control y un circuito HSD (High Side Driver - Manejador de la parte alta), de forma que, dependiendo de las cargas conmutadas y las frecuencias, pueden hacer que ambos switch o interruptores electrónicos del circuito electrónico de conmutación, independientemente, del tipo que sea (MOSFET, IGBT, BIPOLAR), conduzcan simultáneamente provocando un cortocircuito con la consiguiente rotura de los transistores y su destrucción, con el inconveniente que ello representa.Conventionally, the electronic circuits of switching incorporate devices or configurations of called semipuente or complete bridge, which are managed by a control circuit and an HSD circuit (High Side Driver - Driver high part), so that, depending on the switched loads and frequencies, can make both switches or switches electronic circuit electronic switching, regardless of the type (MOSFET, IGBT, BIPOLAR), drive simultaneously causing a short circuit with the consequent breakage of the transistors and their destruction, with the inconvenient this represents.
Así, cuando se produce un cortocircuito se produce su destrucción no siendo válidos, debiendo ser cambiados, de forma que, actualmente, ninguno de los medios existentes en el mercado garantizan una total fiabilidad.Thus, when a short circuit occurs produces its destruction not being valid, and must be changed, so that, currently, none of the existing means in the Market guarantee total reliability.
En la presente memoria se describe una configuración de semipuente o puente no cortocircuitable para circuitos electrónicos de conmutación, siendo del tipo de dispositivos semipuente o puente manejados por un circuito de control y un circuito HSD (High Side Driver) conformantes de circuitos electrónicos de conmutación, de forma que la fuente del interruptor superior se conecta, a través de un primer diodo, con el drenador del interruptor inferior, y, asimismo, el drenador inferior se conecta, a través de un segundo diodo, a la puerta del interruptor superior.This document describes a semi-bridge or non-short-circuit bridge configuration for electronic switching circuits, being of the type of semipuente or bridge devices managed by a circuit of control and a circuit HSD (High Side Driver) circuit components switching electronics, so that the source of the switch upper is connected, through a first diode, to the drain of the lower switch, and also the lower drain is connect, through a second diode, to the switch door higher.
En definitiva, de una forma sencilla, muy económica y de total fiabilidad, se logra evitar que la configuración de semipuente o puente completo sufra un cortocircuito que conlleve la rotura de los transistores y su consiguiente destrucción.In short, in a simple way, very economic and of total reliability, it is possible to avoid that the semi-bridge or full bridge configuration suffer a short circuit leading to breakage of transistors and their consequent destruction
Para complementar la descripción que seguidamente se va a realizar, y con objeto de ayudar a una mejor comprensión de las características de la invención, se acompaña a la presente memoria descriptiva, de un juego de planos, en cuyas figuras de forma ilustrativa y no limitativa, se representan los detalles más característicos de la invención.To complement the description below is going to be done, and in order to help a better understanding of The characteristics of the invention are accompanied by the present descriptive memory, of a set of planes, in whose figures of illustrative and non-limiting, the details are represented characteristic of the invention.
Figura 1. Muestra un esquema de un montaje de una configuración semipuente y puente completo, de acuerdo a una configuración convencional.Figure 1. Shows a schematic of an assembly of a semipuente configuration and complete bridge, according to a conventional configuration.
Figura 2. Muestra un esquema de un montaje de una configuración semipuente y puente completo, de acuerdo a la invención en las que los dos switch o interruptores electrónicos se conectan a través de un primer diodo conectando la puerta superior con el drenador inferior.Figure 2. Shows a schematic of an assembly of a semipuente configuration and complete bridge, according to the invention in which the two electronic switches or switches are connect through a first diode connecting the upper door with the bottom drain.
Figura 3. Muestra un esquema de un montaje práctico aplicable a una fuente de alimentación conmutada.Figure 3. Shows a diagram of an assembly practical applicable to a switched power supply.
A la vista de las comentadas figuras y de acuerdo con la numeración adoptada podemos observar como en la figura 1 de los diseños se ha representado un esquema de una configuración semipuente y puente completo, para alimentación de una carga 2, según un montaje convencional, estando manejados por un circuito de control 1 y un circuito HSD (High Side Driver), con objeto de que los switch o interruptores electrónicos 3 y 4 no conduzcan simultáneamente.In view of the commented figures and agree with the numbering adopted we can observe as in figure 1 of the designs a schematic of a configuration has been represented semipuente and complete bridge, for feeding a load 2, according to a conventional assembly, being handled by a circuit of control 1 and an HSD (High Side Driver) circuit, in order that electronic switches or switches 3 and 4 do not drive simultaneously.
En la figura 2 de los diseños se ha representado un montaje de una configuración semipuente y puente completo, de alimentación a una carga 11, de acuerdo a la invención, pudiendo observar como, partiendo de una configuración de un circuito electrónico convencional, provisto del correspondiente circuito de control 1 y circuito HSD de manejo, los dos switch o interruptores electrónicos 5 y 6 quedan conectados a través de un primer diodo 7, a la vez que la puerta superior 8 queda conectada al drenador inferior 9 a través de un segundo diodo 10.In figure 2 of the designs it has been represented an assembly of a semipuente configuration and complete bridge, of feeding a load 11, according to the invention, being able to observe how, starting from a circuit configuration conventional electronic, provided with the corresponding circuit control 1 and HSD control circuit, both switches or switches electronic 5 and 6 are connected through a first diode 7, at the same time that the upper door 8 is connected to the drain lower 9 through a second diode 10.
Este montaje imposibilita un cortocircuito, ya que, si el interruptor electrónico 6 inferior conduce lo primero que hace es cortar, a través de la puerta superior 8 al interruptor electrónico 5 superior.This assembly makes a short circuit impossible, since that, if the lower electronic switch 6 conducts the first what it does is cut, through the upper door 8 to the switch 5 electronic top.
Finalmente, en la figura 3 de los diseños se ha representado un montaje práctico de un circuito electrónico para conmutación, de acuerdo a la invención, aplicable a una fuente de alimentación conmutada, de forma que la unión de los dos switch o interruptores electrónicos 5 y 6 se efectúa a través del diodo 7 y en caso de conducción simultánea el switch o interruptor superior 5 es abierto a través de la conexión 8 haciendo imposible un cortocircuito.Finally, in figure 3 of the designs it has been represented a practical assembly of an electronic circuit for switching, according to the invention, applicable to a source of switching power, so that the union of the two switches or electronic switches 5 and 6 are done through diode 7 and in case of simultaneous driving the switch or upper switch 5 it is opened through connection 8 making impossible a short circuit.
Asimismo, la puerta del switch o interruptor superior se conecta al drenador inferior por medio de un segundo diodo 10.Also, the switch or switch door upper is connected to the lower drain by means of a second diode 10.
Así, de una forma sencilla, muy económica y con una total fiabilidad se logra evitar que se produzca un cortocircuito.Thus, in a simple way, very economical and with total reliability is achieved to prevent a short circuit.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES200301650A ES2223279B1 (en) | 2003-07-14 | 2003-07-14 | CONFIGURATION OF SEMIPUENTE OR BRIDGE NOT CORTOCIRCUITABLE FOR ELECTRONIC SWITCHING CIRCUITS. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES200301650A ES2223279B1 (en) | 2003-07-14 | 2003-07-14 | CONFIGURATION OF SEMIPUENTE OR BRIDGE NOT CORTOCIRCUITABLE FOR ELECTRONIC SWITCHING CIRCUITS. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES2223279A1 true ES2223279A1 (en) | 2005-02-16 |
ES2223279B1 ES2223279B1 (en) | 2006-04-16 |
Family
ID=34354819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES200301650A Expired - Fee Related ES2223279B1 (en) | 2003-07-14 | 2003-07-14 | CONFIGURATION OF SEMIPUENTE OR BRIDGE NOT CORTOCIRCUITABLE FOR ELECTRONIC SWITCHING CIRCUITS. |
Country Status (1)
Country | Link |
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ES (1) | ES2223279B1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855666A (en) * | 1988-10-11 | 1989-08-08 | Jones Thad M | AC current switch |
WO1995007570A1 (en) * | 1993-09-08 | 1995-03-16 | Siemens Aktiengesellschaft | Current limiting device |
EP0851584A2 (en) * | 1996-12-19 | 1998-07-01 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
DE10227832C1 (en) * | 2002-06-21 | 2003-11-13 | Infineon Technologies Ag | Bridge circuit for controlling inductive load using MOSFETs has at least one transistor of each series transistor pair provided with floating or high ohmic body zone |
-
2003
- 2003-07-14 ES ES200301650A patent/ES2223279B1/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855666A (en) * | 1988-10-11 | 1989-08-08 | Jones Thad M | AC current switch |
WO1995007570A1 (en) * | 1993-09-08 | 1995-03-16 | Siemens Aktiengesellschaft | Current limiting device |
EP0851584A2 (en) * | 1996-12-19 | 1998-07-01 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
DE10227832C1 (en) * | 2002-06-21 | 2003-11-13 | Infineon Technologies Ag | Bridge circuit for controlling inductive load using MOSFETs has at least one transistor of each series transistor pair provided with floating or high ohmic body zone |
Also Published As
Publication number | Publication date |
---|---|
ES2223279B1 (en) | 2006-04-16 |
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