ES2162147T3 - Procedimiento para la preparacion de trimetilhidroquinona. - Google Patents

Procedimiento para la preparacion de trimetilhidroquinona.

Info

Publication number
ES2162147T3
ES2162147T3 ES97105669T ES97105669T ES2162147T3 ES 2162147 T3 ES2162147 T3 ES 2162147T3 ES 97105669 T ES97105669 T ES 97105669T ES 97105669 T ES97105669 T ES 97105669T ES 2162147 T3 ES2162147 T3 ES 2162147T3
Authority
ES
Spain
Prior art keywords
preparation
procedure
acid
trimethyl hydroquinone
trimethylhydroquinone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97105669T
Other languages
English (en)
Inventor
Frank Dr Hubner
Steffen Dr Krill
Bernd Drapal
Hermann Schmitt
Klaus Dr Huthmacher
Herbert Dr Tanner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Degussa GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19627977A external-priority patent/DE19627977A1/de
Application filed by Degussa GmbH filed Critical Degussa GmbH
Application granted granted Critical
Publication of ES2162147T3 publication Critical patent/ES2162147T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/01—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by replacing functional groups bound to a six-membered aromatic ring by hydroxy groups, e.g. by hydrolysis
    • C07C37/055—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by replacing functional groups bound to a six-membered aromatic ring by hydroxy groups, e.g. by hydrolysis the substituted group being bound to oxygen, e.g. ether group
    • C07C37/0555—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by replacing functional groups bound to a six-membered aromatic ring by hydroxy groups, e.g. by hydrolysis the substituted group being bound to oxygen, e.g. ether group being esterified hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C07C67/08—Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides with the hydroxy or O-metal group of organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

LA INVENCION TRATA DE UN PROCEDIMIENTO PERFECCIONADO PARA LA PRODUCCION DE 2, 3, 5 ANSPOSICION DE 4 TRIMETILCICLOHEX METILHIDROQUINONA, Y SU POSTERIOR SAPONIFICACION. LA TRIMETILHIDROQUINONA ES A SU VEZ UN PRODUCTO DE PARTIDA ESENCIAL PARA LA PRODUCCION DE VITAMINA E.
ES97105669T 1996-05-14 1997-04-05 Procedimiento para la preparacion de trimetilhidroquinona. Expired - Lifetime ES2162147T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19619387 1996-05-14
DE19627977A DE19627977A1 (de) 1996-05-14 1996-07-11 Verfahren zur Herstellung von Trimethylhydrochinon

Publications (1)

Publication Number Publication Date
ES2162147T3 true ES2162147T3 (es) 2001-12-16

Family

ID=26025681

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97105669T Expired - Lifetime ES2162147T3 (es) 1996-05-14 1997-04-05 Procedimiento para la preparacion de trimetilhidroquinona.

Country Status (7)

Country Link
US (1) US6063968A (es)
EP (1) EP0808815B1 (es)
JP (1) JPH1053548A (es)
CN (1) CN1102138C (es)
AT (1) ATE204251T1 (es)
DK (1) DK0808815T3 (es)
ES (1) ES2162147T3 (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0850910B1 (en) * 1996-12-27 2001-11-21 Daicel Chemical Industries, Ltd. A method for producing trimethylhydroquinone diester
US6211418B1 (en) * 1997-08-01 2001-04-03 Nippon Petrochemicals Company Limited Method for producing trimethylhydroquinone
DE19805690A1 (de) * 1998-02-12 1999-08-19 Degussa Verfahren zur Herstellung von Trimethydrochinondiestern und von Trimethylhydrochinon
DE19905685A1 (de) * 1999-02-11 2000-08-17 Degussa Verfahren zur Herstellung von 2,3,5-Trimethylhydrochinondiestern
DE19951006A1 (de) * 1999-10-22 2001-04-26 Degussa Verfahren zur Herstellung von veresterten Chromanverbindungen
KR100645669B1 (ko) * 2001-10-04 2006-11-13 에스케이 주식회사 고수율 및 고순도로ｔｍｈｑ-디에스테르를 제조하는 방법
CN1874988B (zh) * 2003-11-07 2010-09-08 帝斯曼知识产权资产管理有限公司 用于制备2,3,5-三甲基对苯二酚二酰化物的方法
US7102191B2 (en) * 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates
JP2009079024A (ja) * 2007-09-27 2009-04-16 Air Water Inc ２−ナフトール誘導体の製造方法
JP5195236B2 (ja) * 2008-09-30 2013-05-08 Ｄｉｃ株式会社 ２−ナフトール誘導体の製造方法
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
TWI822659B (zh) 2016-10-27 2023-11-21 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
US10515913B2 (en) 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
US10446441B2 (en) 2017-06-05 2019-10-15 Invensas Corporation Flat metal features for microelectronics applications
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
US11056348B2 (en) 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
US11244916B2 (en) 2018-04-11 2022-02-08 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US10790262B2 (en) 2018-04-11 2020-09-29 Invensas Bonding Technologies, Inc. Low temperature bonded structures
CN120413551A (zh) 2018-06-13 2025-08-01 隔热半导体粘合技术公司 作为焊盘的tsv
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
US11244920B2 (en) 2018-12-18 2022-02-08 Invensas Bonding Technologies, Inc. Method and structures for low temperature device bonding
US11735523B2 (en) 2020-05-19 2023-08-22 Adeia Semiconductor Bonding Technologies Inc. Laterally unconfined structure
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
EP4268274A4 (en) 2020-12-28 2024-10-30 Adeia Semiconductor Bonding Technologies Inc. STRUCTURES COMPRISING THROUGH-THROUGH-SUBSTRATE VIA HOLES AND METHODS OF FORMING SAME
JP2024501016A (ja) 2020-12-28 2024-01-10 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 基板貫通ビアを有する構造体及びそれを形成する方法
KR20230126736A (ko) 2020-12-30 2023-08-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 전도성 특징부를 갖는 구조 및 그 형성방법
JP2025514099A (ja) 2022-04-25 2025-05-02 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド ダイレクトボンディング用膨張制御型構造体及びその形成方法
US12545010B2 (en) 2022-12-29 2026-02-10 Adeia Semiconductor Bonding Technologies Inc. Directly bonded metal structures having oxide layers therein
US12506114B2 (en) 2022-12-29 2025-12-23 Adeia Semiconductor Bonding Technologies Inc. Directly bonded metal structures having aluminum features and methods of preparing same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
UST900015I4 (en) * 1970-10-01 1972-07-25 defensive publication

Also Published As

Publication number Publication date
EP0808815A3 (de) 1998-02-04
EP0808815B1 (de) 2001-08-16
ATE204251T1 (de) 2001-09-15
JPH1053548A (ja) 1998-02-24
US6063968A (en) 2000-05-16
CN1165133A (zh) 1997-11-19
DK0808815T3 (da) 2001-11-26
CN1102138C (zh) 2003-02-26
EP0808815A2 (de) 1997-11-26

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