ES2147281T3 - Procedimiento para hacer crecer una pelicula epitaxial sobre una superficie de un oxido y producto. - Google Patents

Procedimiento para hacer crecer una pelicula epitaxial sobre una superficie de un oxido y producto.

Info

Publication number
ES2147281T3
ES2147281T3 ES95904844T ES95904844T ES2147281T3 ES 2147281 T3 ES2147281 T3 ES 2147281T3 ES 95904844 T ES95904844 T ES 95904844T ES 95904844 T ES95904844 T ES 95904844T ES 2147281 T3 ES2147281 T3 ES 2147281T3
Authority
ES
Spain
Prior art keywords
perovskite
spinel
built
metal oxide
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES95904844T
Other languages
English (en)
Inventor
Rodney A Mckee
Frederick J Walker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Energy Systems Inc
Original Assignee
Lockheed Martin Energy Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Martin Energy Systems Inc filed Critical Lockheed Martin Energy Systems Inc
Application granted granted Critical
Publication of ES2147281T3 publication Critical patent/ES2147281T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Memories (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

UN PROCESO Y ESTRUCTURA EN DONDE UN FILME QUE CONSTA DE UNA PEROVSQUITA O UNA ESPINELA SE CONSTRUYE EPITAXIALMENTE EN UNA SUPERFICIE (22), COMO UNA SUPERFICIE DE OXIDOS ALCALINOTERREOS, INVOLUCRA LA CONSTRUCCION EPITAXIAL DE PLANOS DE CONSTITUYENTES ALTERNANTES DE OXIDOS METALICOS DE PEROVSQUITA O ESPINELA (20, 26, 28). LA PRIMERA CAPA DE OXIDO ME TALICO CONTRUIDA SOBRE LA SUPERFICIE (22) INCLUYE UN ELEMENTO METALICO QUE PROPORCIONA UN CATION PEQUEÑO EN LA ESTRUCTURA CRISTALINA DE LA PEROVSQUITA O ESPINELA, Y LA SEGUNDA CAPA DE OXIDO METALICO CONSTRUIDA SOBRE LA SUPERFICIE (22) INCLUYE UN ELEMENTO METALICO QUE PROPORCIONA UN CATION GRANDE EN LA ESTRUCTURA CRISTALINA DE LA PEROVSQUITA O ESPINELA. LA SECUENCIA DE CAPAS QUE INCLUYE LA CONSTRUCCION DEL FILME REDUCE PROBLEMAS QUE RESULTAN EN OTROS CASOS DEBIDOS A LA ELECTROSTATICA INTERFACIAL DE LA PRIMERA CAPA ATOMICA, Y ESTOS OXIDOS SE PUEDEN ESTABILIZAR COMO COMO PELICULAS FINAS COMENSURADAS EN UN ESPESOR DE LA CELULA DE LA UNIDAD O CRECER CON ALTA CALIDAD CRISTALINA HASTA ESPESORES DE 0,5 - 0,7 {ZE}M PARA APLICACIONES EN EQUIPOS OPTICOS.
ES95904844T 1993-12-08 1994-12-08 Procedimiento para hacer crecer una pelicula epitaxial sobre una superficie de un oxido y producto. Expired - Lifetime ES2147281T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/163,427 US5450812A (en) 1993-07-30 1993-12-08 Process for growing a film epitaxially upon an oxide surface and structures formed with the process

Publications (1)

Publication Number Publication Date
ES2147281T3 true ES2147281T3 (es) 2000-09-01

Family

ID=22589967

Family Applications (1)

Application Number Title Priority Date Filing Date
ES95904844T Expired - Lifetime ES2147281T3 (es) 1993-12-08 1994-12-08 Procedimiento para hacer crecer una pelicula epitaxial sobre una superficie de un oxido y producto.

Country Status (11)

Country Link
US (1) US5450812A (es)
EP (1) EP0819187B1 (es)
JP (1) JP3671055B2 (es)
AT (1) ATE194172T1 (es)
CA (1) CA2178656C (es)
DE (1) DE69425078T2 (es)
DK (1) DK0819187T3 (es)
ES (1) ES2147281T3 (es)
GR (1) GR3034394T3 (es)
PT (1) PT819187E (es)
WO (1) WO1995016061A1 (es)

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US6080235A (en) * 1997-06-03 2000-06-27 Ut-Battelle, Llc Geometric shape control of thin film ferroelectrics and resulting structures
US6093242A (en) * 1996-08-05 2000-07-25 Ut-Battelle, Llc Anisotropy-based crystalline oxide-on-semiconductor material
US6023082A (en) * 1996-08-05 2000-02-08 Lockheed Martin Energy Research Corporation Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US5767543A (en) * 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
US6020024A (en) * 1997-08-04 2000-02-01 Motorola, Inc. Method for forming high dielectric constant metal oxides
US6103008A (en) * 1998-07-30 2000-08-15 Ut-Battelle, Llc Silicon-integrated thin-film structure for electro-optic applications
US6241821B1 (en) 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459B1 (en) 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6270568B1 (en) * 1999-07-15 2001-08-07 Motorola, Inc. Method for fabricating a semiconductor structure with reduced leakage current density
US6306668B1 (en) 1999-09-23 2001-10-23 Ut-Battelle, Llc Control method and system for use when growing thin-films on semiconductor-based materials
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6479173B1 (en) 1999-12-17 2002-11-12 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6224669B1 (en) 2000-09-14 2001-05-01 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
US20020152953A1 (en) * 2001-04-23 2002-10-24 Chambers Scott A. Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US20030044154A1 (en) * 2001-08-03 2003-03-06 Martin Mogaard Oxide structure useable for optical waveguide and method of forming the oxide structure
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
WO2004023194A2 (en) * 2002-09-04 2004-03-18 Massachusetts Institute Of Technology Optical isolator with magneto-optical material and manufacturing method
US9023662B2 (en) 2011-05-09 2015-05-05 Board Of Regents, The University Of Texas System Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor material
US20130320813A1 (en) * 2012-06-04 2013-12-05 Tdk Corporation Dielectric device
US20180151301A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Epitaxial perovskite materials for optoelectronics
US11342484B2 (en) 2020-05-11 2022-05-24 Silanna UV Technologies Pte Ltd Metal oxide semiconductor-based light emitting device
EP4430674A1 (en) 2021-11-10 2024-09-18 Silanna UV Technologies Pte Ltd Epitaxial oxide materials, structures, and devices
KR20240095343A (ko) 2021-11-10 2024-06-25 실라나 유브이 테크놀로지스 피티이 리미티드 에피택셜 산화물 물질, 구조 및 소자

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Also Published As

Publication number Publication date
US5450812A (en) 1995-09-19
EP0819187A1 (en) 1998-01-21
GR3034394T3 (en) 2000-12-29
CA2178656C (en) 2005-06-28
JPH09509640A (ja) 1997-09-30
EP0819187B1 (en) 2000-06-28
DE69425078T2 (de) 2000-11-02
PT819187E (pt) 2000-10-31
ATE194172T1 (de) 2000-07-15
WO1995016061A1 (en) 1995-06-15
JP3671055B2 (ja) 2005-07-13
EP0819187A4 (es) 1998-01-21
DE69425078D1 (de) 2000-08-03
CA2178656A1 (en) 1995-06-15
DK0819187T3 (da) 2000-08-28

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