ES2100178T3 - STRUCTURES AND MANUFACTURING PROCEDURES FOR FIELD EMISSION CATHODES. - Google Patents

STRUCTURES AND MANUFACTURING PROCEDURES FOR FIELD EMISSION CATHODES.

Info

Publication number
ES2100178T3
ES2100178T3 ES90916570T ES90916570T ES2100178T3 ES 2100178 T3 ES2100178 T3 ES 2100178T3 ES 90916570 T ES90916570 T ES 90916570T ES 90916570 T ES90916570 T ES 90916570T ES 2100178 T3 ES2100178 T3 ES 2100178T3
Authority
ES
Spain
Prior art keywords
structures
field emission
cathode
field
issuance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90916570T
Other languages
Spanish (es)
Inventor
Stephen Michael Zimmerman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of ES2100178T3 publication Critical patent/ES2100178T3/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

ESTE INVENTO MUESTRA DE MANERA GENERAL NUEVAS ESTRUCTURAS PARA UN CATODO DE EMISION DE CAMPO Y PROCESOS PARA FABRICAR LOS MISMOS. LA EMISION DE CAMPO ESTA REALIZADA DE CUALQUIER MATERIAL CAPAZ DE EMITIR ELECTRONES BAJO INFLUENCIA DE UN POTENCIAL ELECTRICO. UN PROCESO PARA FABRICAR UNA INCORPORACION DEL INVENTO INCLUYE LOS PASOS: FORMAR UN ORIFICIO (15) EN UN SUSTRATO (5), DEPOSITAR A UN PRIMER MATERIAL (20) EN DICHO ORIFICIO PARA FORMAR UNA CUSPIDE (21), DEPOSITAR UN MATERIAL EMISOR DE ELECTRON (30) PARA RELLENAR AL MENOS PARCIALMENTE DICHA CUSPIDE Y ELIMINAR EL PRIMER MATERIAL PARA EXPONER UNA PARTE (31) DEL MATERIAL EMISOR DE ELECTRON. EL CATODO DE EMISION DE CAMPO POSEE VARIAS ESTRUCTURAS UNICAS TRIDIMENSIONALES. LA ESTRUCTURA BASICA COMPRENDE UNA CAPA DE MATERIAL CON PUNTAS DE CATODOS. PARA UNA ESTRUCTURA MAS COMPLEJA SE ALINEA PREFERENTEMENTE LA PUNTA DEL CATODO EXACTAMENTE DENTRO DE UNA ESTRUCTURA DE ELECTRODO DE EXTRACCION/CONTROL, PREFERENTEMENTE EN UN MEDIO DE VACIO. LAS ESTRUCTURAS DE ESTE INVENTO PUEDEN FABRICARSE PARA CONECTARSE A OTROS CATODOS DE EMISION DE CAMPO SIMILARES O A OTROS DISPOSITIVOS ELECTRONICOS.THIS INVENTION GENERALLY SHOWS NEW STRUCTURES FOR A FIELD EMISSION CATHODE AND PROCESSES FOR MANUFACTURING THEM. THE FIELD ISSUANCE IS MADE OF ANY MATERIAL CAPABLE OF ISSUING ELECTRONS UNDER THE INFLUENCE OF AN ELECTRICAL POTENTIAL. A PROCESS TO MANUFACTURE AN INCORPORATION OF THE INVENTION INCLUDES THE STEPS: FORMING A HOLE (15) IN A SUBSTRATE (5), DEPOSITING A FIRST MATERIAL (20) IN SUCH HOLE (21), DEPOSITING AN ELECTRONIC EMITTING MATERIAL (30) TO FILL AT LEAST PARTIALLY SAID, CUSP AND REMOVE THE FIRST MATERIAL TO DISPLAY A PART (31) OF THE ELECTRONIC EMITTING MATERIAL. THE FIELD ISSUANCE CATHODE HAS SEVERAL THREE-DIMENSIONAL STRUCTURES. THE BASIC STRUCTURE INCLUDES A LAYER OF MATERIAL WITH CATODE POINTS. FOR A MORE COMPLEX STRUCTURE THE CATHODE TIP IS PREFERABLY ALIGNED WITHIN AN EXTRACTION / CONTROL ELECTRODE STRUCTURE, PREFERABLY IN A VACUUM MEDIUM. THE STRUCTURES OF THIS INVENTION MAY BE MADE TO CONNECT TO OTHER SIMILAR FIELD EMISSION CATHODES OR OTHER ELECTRONIC DEVICES.

ES90916570T 1990-07-18 1990-10-17 STRUCTURES AND MANUFACTURING PROCEDURES FOR FIELD EMISSION CATHODES. Expired - Lifetime ES2100178T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55521390A 1990-07-18 1990-07-18

Publications (1)

Publication Number Publication Date
ES2100178T3 true ES2100178T3 (en) 1997-06-16

Family

ID=24216420

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90916570T Expired - Lifetime ES2100178T3 (en) 1990-07-18 1990-10-17 STRUCTURES AND MANUFACTURING PROCEDURES FOR FIELD EMISSION CATHODES.

Country Status (12)

Country Link
EP (1) EP0539365B1 (en)
JP (1) JP2602584B2 (en)
KR (1) KR950001485B1 (en)
CN (1) CN1021389C (en)
AU (1) AU639342B2 (en)
CA (1) CA2085982C (en)
DE (1) DE69030589T2 (en)
DK (1) DK0539365T3 (en)
ES (1) ES2100178T3 (en)
MY (1) MY106537A (en)
NZ (1) NZ238590A (en)
WO (1) WO1992002031A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9210419D0 (en) * 1992-05-15 1992-07-01 Marconi Gec Ltd Cathode structures
US5795208A (en) * 1994-10-11 1998-08-18 Yamaha Corporation Manufacture of electron emitter by replica technique
US5599749A (en) * 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
KR100343205B1 (en) * 2000-04-26 2002-07-10 김순택 Field emission array using carbon nanotube and fabricating method thereof
US6986693B2 (en) 2003-03-26 2006-01-17 Lucent Technologies Inc. Group III-nitride layers with patterned surfaces
US7952109B2 (en) 2006-07-10 2011-05-31 Alcatel-Lucent Usa Inc. Light-emitting crystal structures
US7266257B1 (en) 2006-07-12 2007-09-04 Lucent Technologies Inc. Reducing crosstalk in free-space optical communications
CN104064434A (en) * 2013-03-22 2014-09-24 海洋王照明科技股份有限公司 Field transmission plane light source and preparation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753022A (en) * 1971-04-26 1973-08-14 Us Army Miniature, directed, electron-beam source
DE2951287A1 (en) * 1979-12-20 1981-07-02 Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt METHOD FOR PRODUCING PLANE SURFACES WITH THE FINEST TIPS IN THE MICROMETER AREA
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
US5012153A (en) * 1989-12-22 1991-04-30 Atkinson Gary M Split collector vacuum field effect transistor
US5100355A (en) * 1991-06-28 1992-03-31 Bell Communications Research, Inc. Microminiature tapered all-metal structures

Also Published As

Publication number Publication date
NZ238590A (en) 1993-07-27
CN1058295A (en) 1992-01-29
EP0539365B1 (en) 1997-04-23
MY106537A (en) 1995-06-30
JPH05507580A (en) 1993-10-28
CA2085982A1 (en) 1992-01-19
AU639342B2 (en) 1993-07-22
DE69030589T2 (en) 1997-11-13
CN1021389C (en) 1993-06-23
WO1992002031A1 (en) 1992-02-06
AU7849491A (en) 1992-01-23
DK0539365T3 (en) 1997-10-27
KR950001485B1 (en) 1995-02-25
JP2602584B2 (en) 1997-04-23
DE69030589D1 (en) 1997-05-28
EP0539365A1 (en) 1993-05-05
CA2085982C (en) 1999-03-09

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