Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Globe Union Inc
Original Assignee
Globe Union Inc
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Filing date
Publication date
Application filed by Globe Union IncfiledCriticalGlobe Union Inc
Priority to ES0141516UpriorityCriticalpatent/ES141516U/en
Publication of ES141516UpublicationCriticalpatent/ES141516U/en
An elementary electrical circuit device comprising a material body of high dielectric constant having properties of a semiconductor and conductive electrodes subject to that in a barrier formation relationship said semiconductor barium titanate material comprising a small or secondary amount of bismuth trioxide . (Machine-translation by Google Translate, not legally binding)
ES0141516U1967-06-151967-06-15An elementary electrical circuit device (Machine-translation by Google Translate, not legally binding)
PendingES141516U
(en)
Semiconductor device that has a plurality of circuit elements formed on the semiconductor body. (Machine-translation by Google Translate, not legally binding)
An electrical device of the type that has a layer or conductive film on a non-conductive base (Machine-translation by Google Translate, not legally binding)
Semiconductor device comprising a field-effect transistor of the type having an insulated gate electrode and circuit arrangements comprising such a semiconductor device