EP4690304A1 - Module de puissance - Google Patents
Module de puissanceInfo
- Publication number
- EP4690304A1 EP4690304A1 EP24715208.5A EP24715208A EP4690304A1 EP 4690304 A1 EP4690304 A1 EP 4690304A1 EP 24715208 A EP24715208 A EP 24715208A EP 4690304 A1 EP4690304 A1 EP 4690304A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductor
- transistors
- ths
- power module
- kelvin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W72/631—Shapes of strap connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/871—Bond wires and strap connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
- H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the present invention relates to a power module.
- the power module implementing a switching arm with a high-side switch formed of several transistors, called high-side, and a low-side switch also formed of several transistors, called low-side.
- the transistors on each side are distributed over two parallel rows.
- the power module further comprises a control circuit with two parts, spaced apart from each other, for controlling respectively the high-side transistors and the low-side transistors.
- Each of the two parts comprises pins projecting upwards or downwards to be connected to drivers.
- a power module comprises: a first conductor comprising one or more portions; a second conductor comprising a portion; a third conductor comprising first and second portions; the portions of the conductors succeeding one another in a first direction in the order: the portion of the second conductor, the second portion of the third conductor, the portion(s) of the first conductor and the first portion of the third conductor; a first switch formed of aligned first transistors, the first transistors being pressed against the second portion of the third conductor and electrically connected to the portion of the second conductor; a second switch formed of aligned second transistors, the second transistors being pressed against the portion(s) of the first conductor and electrically connected to the first portion of the third conductor; and between the first transistors and the second transistors, a transistor control circuit.
- oscillations can be reduced by aligning the high-side transistors and the low-side transistors, each time in a single alignment, and by positioning the control circuit between the two alignments, while allowing easy-to-make connections.
- This is achieved by splitting the phase conductor to alternate a negative conductive portion, a phase conductive portion, a positive conductive portion, and again a phase conductive portion. This allows the connections with the high-side transistors to extend in one direction, while the low-side connections extend in the opposite direction, thereby freeing up space between the transistors to accommodate the control circuit. This particularly concerns the high-current connections of the upper face of the high-side transistors.
- Aligning the transistors also helps reduce the risk of oscillations during switching due to a phase shift between the switching times of the transistors.
- the invention may further comprise one or more of the following optional features, in any technically possible combination.
- the portions of the conductors succeeding one another in the first direction in the aforementioned order are done without any other intermediate conductor between said portions. That is to say that said portions succeeding one another in the first direction are adjacent to one another.
- the portion of the second conductor is adjacent to the second portion of the third conductor which is itself adjacent to the portion(s) of the first conductor which is itself adjacent to the first portion of the third conductor.
- each switch is formed from a single row of aligned transistors.
- the power module comprises only two switches.
- a conductor is formed in one piece. That is, a conductor is formed in one piece. In other words, a conductor is a single piece. It will be understood, in this example, that the conductor is not formed of different portions separated from each other. In particular, in an exemplary embodiment, the third conductor is formed in one piece.
- the third conductor comprises a connecting portion connecting the first portion of the third conductor and the second portion of the third conductor.
- the portions of the conductors are flat. This makes it possible to improve the compactness of the power module and to simplify their manufacture.
- the flat portions extend parallel to each other. This makes it possible to improve the compactness of the power module.
- the first conductor comprises first and second planar portions, a portion of the second transistors being pressed against the first planar portion of the first conductor and the remainder of the second transistors being pressed against the second planar portion of the first conductor, and the third conductor comprises a connecting portion connecting the first and second planar portions by passing between the first and second planar portions of the first conductor.
- one half of the second transistors is plated against the first planar portion of the first conductor and the other half of the second transistors is plated against the second planar portion of the first conductor.
- the second transistors are pressed against the flat portion of the first conductor and the third conductor comprises a connecting portion connecting the first and second flat portions by passing above the flat portion of the first conductor. This makes it possible to simplify the connections between the conductors.
- the first conductor comprises at least one first terminal located before the flat portion of the second conductor in the first direction and, for each first terminal, a connecting portion connecting the flat portion to the first terminal considered, passing next to the second flat portion of the third conductor and the flat portion of the second conductor.
- the first conductor comprises at least one first terminal located before the flat portion of the second conductor in the first direction and, for each first terminal, a connecting portion connecting the flat portion to the first terminal considered by passing above the second flat portion of the third conductor and the flat portion of the second conductor.
- each of the first transistors comprises a Kelvin terminal and the control circuit comprises a first Kelvin track to which all of the Kelvin terminals of the first transistors are connected and/or each of the second transistors comprises a Kelvin terminal and the control circuit comprises a second Kelvin track to which all of the Kelvin terminals of the second transistors are connected.
- control circuit comprises a first Kelvin pin and a resistor connected between the first Kelvin track and the first Kelvin pin and/or a second Kelvin pin and a resistor connected between the second Kelvin track and the second Kelvin pin.
- the resistor makes it possible to reduce parasitic inductances in the control loop and to have a better balance in the switching of the transistors.
- each of the first transistors comprises a control terminal and the control circuit comprises a first global control pin and, for each control terminal of the first transistors, a respective resistor connected between the control terminal considered and the first global control pin and/or each of the second transistors comprises a control terminal and the control circuit comprises a second global control pin and, for each control terminal of the second transistors, a respective resistor connected between the control terminal considered and the second global control pin.
- the resistor makes it possible to reduce the parasitic inductances in the control loop and to have a better balance in the switching of the transistors.
- the power module comprises a so-called control substrate, for example pressed against the second portion of the third conductor, on which the control circuit extends.
- control circuit comprises control electronics, such as a high-side transistor driver and/or a low-side transistor driver.
- FIG. 1 is a schematic view of a land motor vehicle in which the invention can be implemented
- FIG. 2 is an electrical diagram of a switching circuit that can be used in the land motor vehicle of FIG. 1
- FIG. 3 is a three-dimensional view of a first example of a power module according to the invention
- FIG. 4 is a top view of the power module of FIG. 3
- FIG. 5 is a top view of a second example of a power module according to the invention
- FIG. 6 is a three-dimensional view of a type of low-side switch connection strips of the power module
- FIG. 7 is a three-dimensional view of a low-side switch connection clip of the power module.
- the vehicle 100 comprises one or more drive wheels 102 designed to put the vehicle 100 in motion.
- the mobility device 100 To drive the drive wheel(s) 102, the mobility device 100 further comprises an electric drive device 104 and a direct voltage source 106, such as a battery, designed to electrically power the electric drive device 104.
- a direct voltage source 106 such as a battery
- the electric drive device 104 comprises an electric machine 108, in particular polyphase, for example three-phase, connected to the drive wheel(s) 102 to drive the latter.
- the electric drive device 104 further comprises an AC-DC electric voltage converter 110 connected between the DC voltage source 106 and the electric machine 108.
- the electric voltage converter 110 is configured to transfer electric power between the DC voltage source 106 and the electric machine 108.
- the AC-DC converter 110 is configured to operate as an inverter to transfer electric power from the DC voltage source 106 to the electric machine 108 operating as an electric motor.
- the AC-DC converter 110 may also be configured to operate as a rectifier to transfer electrical power from the electrical machine 108 operating as an electrical generator to the DC voltage source 106, for example to recharge the latter.
- the conductors C+, C-, C- are arranged to present the following succession in a direction D1: a portion P-1 of the negative conductor C-, then a portion P-2 of the phase conductor C-, then at least one portion P+1, P+2 of the positive conductor C+, then another portion P-1 of the phase conductor C ⁇ .
- the direction D1 is parallel to the direction Y.
- the preceding portions follow one another from the back to the front.
- the high side switch HS is formed by several high side transistors THS pressed against the positive conductor C+ and electrically connected to the alternating conductor C-, for example by respective RUBHS strips (with for example two contact areas as for the RUBLS strips) or by one or more clips each connecting several high side transistors THS (as for the low side transistors TLS).
- RUBHS strips with for example two contact areas as for the RUBLS strips
- clips each connecting several high side transistors THS (as for the low side transistors TLS).
- a part of the high side transistors THS for example, half
- the other part of the high-side transistors THS e.g. the other half
- the positive conductor C+ further comprises at least one terminal called positive B+1, B+2
- the negative conductor C- further comprises at least one terminal called negative B-
- the alternating conductor C- comprises at least one terminal called alternating B ⁇ .
- the positive conductor C+ has a single portion P+1 on which all the high side transistors THS are plated. To connect together the two portions P ⁇ 1, P-2 of the alternating conductor C-, the connecting part PL- passes above the portion P+1 of the positive conductor C+.
- the connecting portions PL+1, PL+2 pass above the portion P-2 of the alternating conductor C- and the portion P-1 of the negative conductor C-. This solution allows the portion P+1 to have a large surface area for plating the high-side transistors THS.
- the positive conductor C+ comprises, for example, a third connection portion PL+3 connecting the two other connection portions PL+1, PL+2.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2303208A FR3147461A1 (fr) | 2023-03-31 | 2023-03-31 | Module de puissance |
| PCT/EP2024/058747 WO2024200805A1 (fr) | 2023-03-31 | 2024-03-29 | Module de puissance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP4690304A1 true EP4690304A1 (fr) | 2026-02-11 |
Family
ID=87554457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP24715208.5A Pending EP4690304A1 (fr) | 2023-03-31 | 2024-03-29 | Module de puissance |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP4690304A1 (fr) |
| CN (1) | CN120917571A (fr) |
| FR (1) | FR3147461A1 (fr) |
| WO (1) | WO2024200805A1 (fr) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5707302B2 (ja) * | 2011-11-02 | 2015-04-30 | 株式会社 日立パワーデバイス | パワー半導体モジュール |
| CA2989672C (fr) * | 2015-06-23 | 2022-11-29 | Tm4 Inc. | Topologie physique pour convertisseur de puissance |
| KR102787083B1 (ko) * | 2019-01-10 | 2025-03-26 | 울프스피드 인코포레이티드 | 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른 스위칭을 갖는 고전력 다층 모듈 |
| JP7142784B2 (ja) * | 2019-07-24 | 2022-09-27 | 日立Astemo株式会社 | 電気回路装置 |
| JP7532813B2 (ja) * | 2020-03-06 | 2024-08-14 | 富士電機株式会社 | 半導体モジュール |
| DE102020106406B4 (de) * | 2020-03-10 | 2025-12-24 | Semikron Danfoss Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
| DE102020119169B4 (de) * | 2020-07-21 | 2022-03-10 | Danfoss Silicon Power Gmbh | Schaltkomponenten |
-
2023
- 2023-03-31 FR FR2303208A patent/FR3147461A1/fr active Pending
-
2024
- 2024-03-29 CN CN202480022729.0A patent/CN120917571A/zh active Pending
- 2024-03-29 EP EP24715208.5A patent/EP4690304A1/fr active Pending
- 2024-03-29 WO PCT/EP2024/058747 patent/WO2024200805A1/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024200805A1 (fr) | 2024-10-03 |
| CN120917571A (zh) | 2025-11-07 |
| FR3147461A1 (fr) | 2024-10-04 |
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Legal Events
| Date | Code | Title | Description |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: UNKNOWN |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
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| 17P | Request for examination filed |
Effective date: 20250915 |
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| AK | Designated contracting states |
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| DAX | Request for extension of the european patent (deleted) | ||
| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: VALEO ELECTRIFICATION |