Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
  • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
  • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
• • G—PHYSICS
  • G06—COMPUTING OR CALCULATING; COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
  • G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control

Definitions

• micromagnets in the field of micro and nano electronics.
• An aim of the invention is to propose a new magnetic component architecture making it possible to optimize the shape of the profile of the magnetic field generated by micromagnets, and thus to improve the performance of these components.
• quantum dot or quantum dot, a portion of the nano-object in which an electron is trapped/confined in three dimensions; it can only occupy discrete levels of energy;
• an electrode one end of an electrical conductor arranged to release or capture an electric current
• a magnet a magnetic element which becomes magnetized under the effect of an external magnetic field
• electrostatic potentials allowing the formation of the two quantum dots, the electrostatic potentials which make it possible to modulate the potential energy barriers and create a double quantum dot;
• - Quantum gate a logical operation that can change the superposition state of a qubit.
• a qubit may have a 50/50 chance of ending up in either of two states;
• inhomogeneous magnetic field a magnetic field generated so as to generate a magnetic dipole, preferably by any variation of the magnetic field around and/or along the at least one nano-object element; for example, a vertical and/or horizontal component of the magnetic field changes sign along or around the at least one nano-object element, preferably at the level or directly above the at least one magnetic grid electrode ; according to a particular example a horizontal magnetic field gradient or along the at least one nano-object element which makes the total field inhomogeneous along said at least one nano-object element, preferably the component of the magnetic field according to axis or direction of the at least one nano-object changes sign along the at least one nano-object element;
• spatial extent the area located along and/or around, preferably radially, the at least one nano-object element, preferably between the suspension electrodes, according to one embodiment an extent corresponding to the distance between two quantum dots;
• At least two suspension electrodes a source electrode connected to a source of electrons and a drain electrode connected to a reference potential, designed to receive a quantum element integrating a double quantum dot,
• a magnetic component according to the invention designed to exert an antisymmetric magnetic field with a strong magnetic field gradient along a second direction orthogonal to the first direction, under the effect of a magnetic field produced by external magnetic means, this antisymmetric magnetic field being applied to said quantum element.
• a method of manufacturing a quantum component according to the invention comprising the following steps:
• nanotube or a nanowire (not visible on the ) connected to the suspension electrodes, the nanotube or the nanowire being suspended in a rectilinear manner above the gate electrodes and above a set of magnets arranged in a substantially parallel manner, this nanotube or this nanowire being preferably produced in carbon.
• the magnetic device 8 comprises permanent magnets arranged in the form of two combs 2A, 2B facing each other, a first comb and a second comb.
• Each comb 2A, 2B comprises a plurality of magnets 20A, 21A; 21A, 21B of generally rectangular shape arranged parallel to each other.
• the series of magnets of each comb is connected along the Z axis to the two opposite ends of the opposite.
• each comb 2A, 2B comprises 15 magnets.
• Each magnet has a width of 1.5 micrometers and a length of 8.5 micrometers. The width is chosen so as to make the magnetic moments parallel to the boundaries due to the internal dipolar energies.
• each magnet is spaced laterally, along the Y axis, by a distance of 0.75 micrometers.
• each comb 2A, 2B has a thickness of 400 nanometers.
• each magnet comprises iron and cobalt, preferably with high remanence.
• Each magnet 21A of a first comb 2A has, with reference to Figures 2 and 3, an interaction end or magnetic pole 41A, arranged to be opposite an interaction end or pole 41B of a magnet 21B of the second comb 2B.
• Each transverse face faces a transverse face of a magnet of the second comb.
• the spacing between two interacting ends or facing magnet poles is between 0.4 and 1 micrometer. The spacing is measured between the distal points of said interaction ends.
• each interaction end has a rounded shape seen along a two-dimensional plane, or longitudinal plane, illustrated by the XY plane of the .
• Figures 3, 4 and 5 illustrate the optimal shapes of a saturated nanomagnet in the case of quantum dots of finite extension, in particular the uniform magnetization imposed along x, maximizing a field difference Bz.
• the distal part in a rounded shape, in particular of an ovoid shape in three dimensions contributes the most to the optimization of the magnetic field.
• the shape of the interaction tip allows the magnetic moments to be aligned in a single direction.
• each magnet 21A has a connecting end 31A, opposite the interaction end 41A.
• Each comb 2A, 2B further comprises a connecting part 200A, 200B of the magnets, so that each magnet of a comb 2A, 2B is connected to the connecting part 200A, 200B of said comb 2A, 2B via the end of connection.
• the connecting part 200A, 200B has a width of 4 micrometers.
• the quantum component thus proposes to exert an antisymmetric magnetic field with a strong magnetic field gradient along the Z direction orthogonal to the X direction, under the effect of a magnetic field generated by external magnetic means.
• the antisymmetric field constant reaches 26.8 micro-eV and the symmetric field constant reaches 29 micro-eV, making it possible to optimize spin-photon coupling.
• the different colors correspond to CoFe (line with squares), Co (line with triangles) and NiFe (line with circles).

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Theoretical Computer Science (AREA)
• General Physics & Mathematics (AREA)
• Data Mining & Analysis (AREA)
• General Engineering & Computer Science (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Mathematical Analysis (AREA)
• Mathematical Optimization (AREA)
• Pure & Applied Mathematics (AREA)
• Computing Systems (AREA)
• Evolutionary Computation (AREA)
• Mathematical Physics (AREA)
• Software Systems (AREA)
• Computational Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Artificial Intelligence (AREA)
• Hall/Mr Elements (AREA)
• Thin Magnetic Films (AREA)

Applications Claiming Priority (2)

Publications (1)

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• 2022
  • 2022-09-08 FR FR2209018A patent/FR3139660A1/fr active Pending
• 2023
  • 2023-09-08 EP EP23764966.0A patent/EP4584802A1/de active Pending
  • 2023-09-08 WO PCT/EP2023/074739 patent/WO2024052533A1/fr not_active Ceased
  • 2023-09-08 CN CN202380064273.XA patent/CN120019456A/zh active Pending
  • 2023-09-08 JP JP2025514325A patent/JP2025530215A/ja active Pending

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