EP4339339A8 - Liaison de morceaux de diamant sur des substrats de silicium à l'aide d'un agent de liaison fluide - Google Patents
Liaison de morceaux de diamant sur des substrats de silicium à l'aide d'un agent de liaison fluide Download PDFInfo
- Publication number
- EP4339339A8 EP4339339A8 EP22195693.1A EP22195693A EP4339339A8 EP 4339339 A8 EP4339339 A8 EP 4339339A8 EP 22195693 A EP22195693 A EP 22195693A EP 4339339 A8 EP4339339 A8 EP 4339339A8
- Authority
- EP
- European Patent Office
- Prior art keywords
- bonding
- flowable
- silicon substrates
- bonding agent
- diamond pieces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 5
- 239000010432 diamond Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000007767 bonding agent Substances 0.000 title abstract 2
- 230000009969 flowable effect Effects 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP22195693.1A EP4339339A1 (fr) | 2022-09-14 | 2022-09-14 | Liaison de morceaux de diamant sur des substrats de silicium à l'aide d'un agent de liaison fluide |
PCT/NL2023/050474 WO2024058664A1 (fr) | 2022-09-14 | 2023-09-14 | Liaison de pièces de diamant à des substrats de silicium à l'aide d'un agent de liaison fluide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP22195693.1A EP4339339A1 (fr) | 2022-09-14 | 2022-09-14 | Liaison de morceaux de diamant sur des substrats de silicium à l'aide d'un agent de liaison fluide |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4339339A1 EP4339339A1 (fr) | 2024-03-20 |
EP4339339A8 true EP4339339A8 (fr) | 2024-05-01 |
Family
ID=83594092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP22195693.1A Pending EP4339339A1 (fr) | 2022-09-14 | 2022-09-14 | Liaison de morceaux de diamant sur des substrats de silicium à l'aide d'un agent de liaison fluide |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP4339339A1 (fr) |
WO (1) | WO2024058664A1 (fr) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6696352B1 (en) * | 2001-09-11 | 2004-02-24 | Silicon Wafer Technologies, Inc. | Method of manufacture of a multi-layered substrate with a thin single crystalline layer and a versatile sacrificial layer |
JP5297219B2 (ja) * | 2008-02-29 | 2013-09-25 | 信越化学工業株式会社 | 単結晶薄膜を有する基板の製造方法 |
CN109913954B (zh) * | 2019-03-13 | 2021-08-06 | 电子科技大学 | 具有隔离层的单晶薄膜的制备方法、单晶薄膜及谐振器 |
-
2022
- 2022-09-14 EP EP22195693.1A patent/EP4339339A1/fr active Pending
-
2023
- 2023-09-14 WO PCT/NL2023/050474 patent/WO2024058664A1/fr unknown
Also Published As
Publication number | Publication date |
---|---|
WO2024058664A1 (fr) | 2024-03-21 |
EP4339339A1 (fr) | 2024-03-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN PUBLISHED |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MICHALAK, DAVID JASON Inventor name: DALLE, JACUB-ADAM Inventor name: WILLIGERS, TIMO JEAN JOZEF Inventor name: DE JONG, NICKY Inventor name: VOLLMER, RENE Inventor name: PAPADOPOULOS, NIKOLAOS Inventor name: TSAPANOU-KATRANARA, EFTYCHIA |