Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0236—Special surface textures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
  • H01L31/0264—Inorganic materials
  • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
  • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
  • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
  • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
  • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
  • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
  • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
  • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
  • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/81—Electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/84—Layers having high charge carrier mobility
  • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/84—Layers having high charge carrier mobility
  • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/87—Light-trapping means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• the present invention relates to a perovskite-based multi-junction solar cell and a method for its production.
• the invention is located in particular in the field of optoelectronics. In principle, however, other applications are also conceivable.
• an adjustable band gap of these perovskites by varying the composition of the halide anion in a perovskite crystal structure enables strong light absorption in a broad spectral range.
• perovskites fundamentally qualify as promising candidates for a next generation of multi-junction solar cells.
• Several absorbers are combined in multiple solar cells, which means that the level of efficiency is far above that of single solar cells. Therefore, perovskites are of particular interest for these multi-junction solar cells, since the efficiency can be increased through a combination of established photovoltaic technologies, such as wafer-based silicon or copper-indium-gallium-diselenide solar cells. This means that perovskite-based solar cells are currently a promising technology for the future photovoltaic market. Perovskite solar cells therefore always show high efficiencies and are basically ideal for multiple solar cells due to their good optoelectronic properties.
• US Pat. No. 1,0,229,791 B2 describes a method for producing a perovskite solar cell by a non-deposition method. Specifically, the method includes preparing a first substrate by forming a hole-transport layer on a light-absorbing layer in a half-dried state, and pressurizing and drying a second substrate having an electrode opposed to the first substrate.
• WO 2017/200732 A1 describes production of a laminated structure by providing a first substrate with an n-type oxide layer on a first surface and a second substrate with a p-type oxide layer on a first surface.
• the first surface of the first substrate, the first surface of the second substrate, or both have a liquid halide layer.
• the first substrate is pressed into contact with the second substrate such that the first surface of the first substrate touches the first surface of the second substrate.
• the halide layer is then solidified to form the laminated structure.
• WO 2019/173803 A1 describes a method that includes positioning a stack that has at least one of the following layers between a first surface and a second surface: a first perovskite layer and/or a second perovskite layer; and treating the stack for a period of time by heating the stack and/or by pressurizing the stack, wherein a device having the first surface and the second surface provides for heating and pressurizing the stack.
• a device having the first surface and the second surface provides for heating and pressurizing the stack.
• individual layers of solar cells or perovskite-based multiple solar cells can be produced by various processes. These include, for example, vacuum coating processes, liquid-phase processes and a combination of both.
• the application of the perovskite layer in a perovskite solar cell and further layers on the silicon solar cell can be achieved by a sequential sequence of the layers.
• US2020/0212243 A1 describes a method for producing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded to a silicon solar cell.
• a first precursor microporous thin film is formed by a sputtering method on a substrate having an unevenly structured texture, and then a halide thin film is formed on the first precursor microporous thin film to form a perovskite absorption layer form, whereby a light reflection can be reduced and a light path can be increased. Accordingly, a light absorption rate can be increased.
• EP 3 244 455 A1 describes a method for producing a device comprising an organic/organic hybrid perovskite compound film.
• the method comprises the following steps: a) laminating a first structure and a second structure to allow contact between the first surface layer and the second surface layer, the first structure comprising a first surface layer comprising at least one of the materials i) to v), wherein the second structure comprises a second surface layer, which independently of the first surface layer has at least one of the materials i) to v); and b) applying heat and physical force to the laminate, thereby laminating the first structure and the second structure: i) an inorganic/organic hybrid perovskite compound, ii) an organic halide, iii) a metal halide, iv) an inorganic/organic shear hybrid perovskite compound precursor and v) a metal halide precursor.
• patents and publications basically deal with a connection from one perovskite layer to another layer for perovskite solar cells using a transparent conductive adhesive.
• US 2016/0111223 A1 describes an optoelectronic device.
• the device comprises: (a) an upper device component comprising: a counter electrode made of a metal, a conductive oxide or a conductive organic compound; (b) a lower device component comprising: a glass or polymeric support substrate, a working electrode comprising a transparent conductive coating adjacent to the glass or polymeric substrate, a blocking layer, an active layer, a hole conducting layer, (c) a conductive adhesive disposed between the upper device component and the lower upper device component, and (d) a contact layer to facilitate injection of electrons into the active layer between and in contact with the conductive adhesive and the hole transporting layer.
• perovskite-based solar cells still has a few challenges to master, such as ensuring improved long-term stability and stability at high temperatures.
• a material selection in the sequential layer deposition is fundamentally limited by process or material incompatibilities. This is basically because it must be ensured that each additional layer that is applied does not destroy the previous one. In principle, the destruction can be caused by incompatible solvents, excessive process temperatures or mechanical destruction by particles of high energy, such as in physical vapor deposition.
• a lamination with a conductive transparent adhesive basically requires an additional layer that can generate additional and/or unwanted optical and/or electrical losses.
• Lamination over a “semi-”dried hole transport layer fundamentally limits the process by the choice of possible hole transport materials. Since a dry and semi-dried layer is required on one of the layer stacks, only a solvent-based approach can be used, which fundamentally entails solvent incompatibilities.
• the lamination of a wet perovskite layer is fundamentally difficult to scale up.
• the lamination of two perovskite layers basically requires the application of the perovskite to both layer stacks. On the one hand, this is fundamentally more expensive/complex, and on the other hand, it fundamentally limits the choice of material under the perovskite layer.
• the object of the present invention is to provide a perovskite-based multi-junction solar cell and a method for its production, which at least partially overcomes the listed disadvantages and limitations of the prior art.
• the perovskite-based multi-junction solar cell and the Processes for their production increase the long-term stability of perovskite-based multi-junction solar cells and enable new material and layer combinations.
• the terms “have”, “have”, “comprise” or “include” or any grammatical variations thereof are used in a non-exclusive manner. Accordingly, these terms can refer both to situations in which, apart from the features introduced by these terms, no further features are present, or to situations in which one or more further features are present.
• the expression “A has B”, “A has B”, “A comprises B” or “A includes B” can both refer to the situation in which, apart from B, there is no other element in A ( i.e. to a situation in which A consists exclusively of B), as well as to the situation in which, in addition to B, there are one or more other elements in A, e.g. element C, elements C and D or even other elements .
• first and second are to be regarded as pure descriptions, without specifying an order or ranking and, for example, without excluding the possibility that several types of first elements or second elements or exactly one type can be provided. Furthermore, additional elements, for example one or more third elements, can be present.
• a method for producing a perovskite-based multi-junction solar cell is described.
• the method can include the method steps described below.
• the method steps can in particular be carried out in the specified order. However, a different order is also conceivable.
• one or more method steps can be carried out simultaneously or with a time overlap.
• one, several or all of the method steps can be carried out once or repeatedly.
• the method can also include further procedural steps.
• the method comprises the following steps: a) producing a first layer stack, the first layer stack having at least one substrate, at least one first electrode and at least one first layer; b) producing a second layer stack, the second layer stack having at least one absorber layer and at least one second layer.
• a perovskite layer is introduced into the first layer stack, or in step b), the perovskite layer is introduced into the second layer stack.
• a perovskite layer can optionally be introduced into the first layer stack in step a) and a perovskite layer can be introduced into the second layer stack in step b).
• the procedure further includes the following steps: c) applying the first layer stack to the second layer stack; d) laminating the first layer stack with the second layer stack in such a way that at least one connection selected from the group consisting of: a mechanical, an electrical connection forms between the first layer stack and the second layer stack, the perovskite-based multi-junction solar cell is formed.
• the first layer and the second layer are each selected from the group consisting of: a hole transport layer, an electron transport layer, a buffer layer, a recombination layer, an electrode layer.
• the perovskite layer forms either a layer of the first layer stack or of the second layer stack that forms a laminate.
• the second layer stack can furthermore have at least one second electrode.
• the first or second layer stack can have a recombination layer.
• the term "multiple solar cell” refers to a solar cell that has two or more absorber layers that convert incident light into electrical current.
• the absorber layers can be stacked one on top of the other.
• the top absorber layer facing the light absorbs light with a short wavelength and lets longer-wave light through.
• the second absorber layer arranged underneath absorbs part of the spectrum up to a cut-off wavelength, which is determined by a so-called band gap energy in semiconductors.
• the multi-junction solar cell can therefore also be described as a “stack solar cell”.
• it can be a multi-junction solar cell with exactly two absorber layers.
• the multiple solar cell with exactly two absorber layers can also be referred to as a tandem solar cell.
• perovskite-based multi-junction solar cell therefore basically refers to a multi-junction solar cell in which at least one of the absorber layers has perovskite.
• the other absorber layer can in particular have silicon.
• the further absorber layer can be or include a solar cell, in particular a silicon solar cell.
• the further absorber layer can have perovskite.
• the further absorber layer can be an organic or inorganic absorber layer, which includes, for example, copper indium gallium diselenide (CIGS). In principle, other configurations are also possible. Other possible materials for the additional absorber layer are described below.
• the term "layer” basically refers to any element with a cuboid shape, the extent of which in one dimension is referred to as thickness.
• the layer can in particular have a thickness in the nanometer range to the micrometer range. In particular, the layer can have a thickness of up to 5 mil.
• the layer can be a continuous layer. Alternatively, however, the layer can be interrupted at one or more points, for example by indentations or interruptions.
• the layer can be deposited or applied onto a substrate or onto another layer. Exemplary manufacturing processes are described in more detail below.
• a "stack of layers” is to be understood in principle as meaning a sequence of at least two layers which are applied to one another directly or with the interposition of one or more intermediate layers.
• the layer stack can have multiple layers of the same material. Furthermore, the layer stack can have layers of different materials. In principle, other embodiments are also conceivable.
• the layer stack can in particular have at least three layers. A different number of layers is also conceivable in principle.
• the layers can be separated from one another by interfaces. The interfaces can be planar or textured.
• the "stack of layers” can therefore also be referred to as "layer structure".
• the stack of layers can also include elements other than layers.
• the first electrode and/or the second electrode can optionally be formed as a finger electrode, grid or grid-like electrode.
• the first electrode and/or the second electrode can be arranged in particular between layers of the first layer stack or of the second layer stack.
• the layers of the first layer stack can be arranged one on top of the other. Furthermore, the layers of the second layer stack can be arranged one on top of the other.
• the term "superimposed” basically refers to a layer of one surface to another surface, with the two surfaces being arranged opposite one another.
• the first surface and the second surface can be in direct contact with one another.
• the second layer can lie on the first layer, with the first surface and the second surface touching at least partially.
• the second layer can, for example, have smaller dimensions, in particular a smaller length and/or width, than the first layer or vice versa.
• parts of the second surface can be uncovered by the first layer or vice versa.
• the first layer and the second layer can be offset from one another, i.e. part of the second layer can protrude over an edge of the first layer or vice versa.
• the “production of a layer stack” basically refers to any process which can include depositing or applying one or more layers of the layer stack onto a substrate or onto another layer.
• a deposition method can be used selected from the group consisting of: sputtering, electron beam evaporation, thermal evaporation, spin coating, blade coating, ink jet printing, spray coating, slot die coating, roller coating, gravure printing, atomic layer deposition.
• a layer of SnO x can be deposited by atomic layer deposition.
• aborber layer basically designates any layer which has at least one charge carrier-generating layer.
• the perovskite layer can be set up as an absorber layer.
• the term “perovskite” basically refers to any layer that has or includes perovskite.
• the term “perovskite” basically describes any material.
• An example are 3D perovskites with an ABX3 chemical structure, where X can correspond to iodine, bromine or chlorine (or any mixture of these), where B can correspond to lead or tin (or any mixture of these), where A can correspond to methylammonium, formamidinium, cesium, potassium or rubidium (or any mixture of these). Any deviations and impurities from the named chemical structure of the 3D perovskites are also fundamentally included.
• the perovskite layer can be produced in particular by means of at least one deposition method selected from the group consisting of: thermal evaporation, spin coating, knife coating, inkjet printing, spray coating, slot nozzle coating, roller coating, gravure printing. In principle, however, other methods are also conceivable.
• the perovskite layer can be applied to the first layer stack or to the second layer stack using at least one method, selected from the group consisting of: thermal evaporation, spin coating, doctor blade coating, inkjet printing, spray coating, slot nozzle coating, roller coating, gravure printing.
• the perovskite layer is introduced into the first layer stack in step a) or the perovskite layer is introduced into the second layer stack in step b).
• the first layer stack or the second layer stack can have the perovskite layer.
• the first layer stack can have multiple layers and one of the layers can be the perovskite layer.
• the second layer stack can have multiple layers and one of the layers may be the perovskite layer.
• the first layer stack and/or the second layer stack can each have at least one further perovskite layer.
• the absorber layer of the second layer stack can in particular have or comprise silicon.
• the absorber layer of the second layer stack can therefore also be referred to as a "silicon layer".
• the silicon can be present in particular as monocrystalline, polycrystalline or amorphous silicon with a p-n junction or a p-i-n junction.
• the silicon can be either planar or textured, as discussed in more detail below.
• the absorber layer of the second layer stack can be or comprise a solar cell, in particular a silicon solar cell. In principle, however, other configurations are also conceivable.
• the term "substrate” basically refers to any element with the property of carrying one or more other elements and which accordingly has mechanical stability.
• the substrate of the first layer stack can, in particular, be transparent.
• the substrate of the first layer stack can also be in the form of a flexible substrate.
• the substrate of the first layer stack can be made from a polymer, in particular from polyethylene terephthalate (PET) and/or polyethylene naphthalate (PEN) and/or ethylene vinyl acetate (EVA).
• PET polyethylene terephthalate
• PEN polyethylene naphthalate
• EVA ethylene vinyl acetate
• the substrate of the first layer stack can also be made of glass.
• the glass can have a thickness of 5 ⁇ m to 5 mm, in particular 25 ⁇ m.
• the substrate of the first layer stack can be designed as a rigid substrate, in particular as a rigid substrate made of glass.
• the substrate can be set up for encapsulating the perovskite-based multiple solar cell, in particular after step d) has been carried out.
• the encapsulation can be set up by sequential production in order to protect the perovskite-based multi-junction solar cell from external influences such as water, oxygen and/or reactive substances.
• the substrate in particular glass or a foil, can already form a delimiting layer directly after the lamination.
• a greatly simplified sequence of process steps is possible in principle.
• the stability of the perovskite-based multi-junction solar cell can in principle be increased.
• the substrate can be a colored substrate.
• the colored substrate can in particular have or comprise a foil and/or glass. A color or a visual perception of the perovskite-based multi-junction solar cell can thus be adjusted.
• Perovskite-based multi-junction solar cells with colored substrates can be used in building-integrated photovoltaics in particular.
• the substrate can optionally be removed from the perovskite silicon multi-junction solar cell.
• an anti-adhesive layer can be applied to the substrate, which can be set up in particular for removing the substrate from the perovskite silicon multiple solar cell.
• the substrate and/or at least one layer of the first layer stack and/or the second layer stack can have at least one rough surface.
• the rough surface can be caused by the manufacturing process.
• the rough surface can in particular have a root-mean-squared roughness of 1 nm to 2 ⁇ m, in particular of 50 nm to 300 nm.
• the rough surface can also have a distance between a highest point and a lowest point (peak to valley) of 1 nm to 10 pm, in particular 10 nm to 1 pm.
• the process of the invention can circumvent this roughness, which can be inherent in certain manufacturing processes, and can therefore represent an advantage for industrial applications. This can be particularly relevant, for example, for CIGS bottom solar cells, which basically have a rough surface due to the manufacturing process.
• the substrate and/or at least one layer of the first layer stack and/or the second layer stack can have at least one textured surface with at least one texture.
• the texture can be specifically generated by a manufacturing process.
• the textured surface can have a root-mean-squared roughness of greater than 2 nm, in particular greater than 250 nm.
• the textured surface can have a distance between a highest point and a lowest point (peak to valley) of 20 nm to 100 ⁇ m, in particular of 500 nm to 10 ⁇ m.
• a surface of the laminate-forming layer of the first layer stack and/or a surface of the laminate-forming layer of the second layer stack can be the textured surface.
• silicon solar cells that are textured on one or both sides, the texture of which enables better light coupling, which can improve absorption. Thus higher efficiencies can be achieved.
• the texture can be generated either periodically or randomly.
• the texture can have a large number of elements.
• the texture can be nanotexturing or microtexturing.
• nanotexturing is basically to be understood as meaning any texture in which the elevations and/or depressions on the surface have dimensions which are in the range of 1 or more nanometers, in particular in the range from 10 nm to 1000 nm, preferably in the range from 50 nm to 800 nm, particularly preferably in the range from 100 nm to 500 nm.
• microtexturing is to be understood in principle as meaning any texture in which the elevations and/or depressions on the surface have dimensions in the range of 1 or more micrometers, in particular in the range from 2 ⁇ m to 500 ⁇ m, preferably in the range from 5 pm to 100 pm, particularly preferably in the range from 10 pm to 50 pm.
• the dimensions can in particular be a height, a width and/or a depth of the elevations or the depressions.
• the elements can be designed as an elevation on a surface of a layer of the first layer stack and/or the second layer stack.
• the elements can be isolated elements which are at a distance from neighboring elements.
• the elements can be designed without contact with one another. Alternatively, the elements can at least partially touch.
• the elements can in particular have at least one shape selected from the group consisting of: a cone shape, in particular a truncated cone shape; a tetrahedron shape, in particular a pyramid shape; a cylindrical shape, in particular a circular cylindrical shape or elliptical cylindrical shape; a spherical shape.
• the texture can have at least one structure selected from the group consisting of: a cone shape, in particular a truncated cone shape; a tetrahedron shape, in particular a pyramid shape; a cylindrical shape, in particular a circular cylindrical shape or elliptical cylindrical shape; a spherical shape.
• the textured surface can have a self-cleaning effect.
• the textured surface can improve optical properties of the perovskite-based multijunction solar cell, in particular so that light can be absorbed effectively and high efficiencies of the perovskite-based multijunction solar cell can be achieved.
• the at least one texture can be formed on the substrate during step d).
• the substrate may be or comprise a film and at least one surface of the film may be textured during lamination by hot stamping.
• An additional functionality of the perovskite-based multi-junction solar cell can thus be achieved without carrying out an additional process step.
• the textured surface can also be formed on the substrate before carrying out step d). will.
• a textured foil and/or a textured glass can be provided.
• the substrate and/or at least one layer of the first layer stack and/or of the second layer stack can have at least one surface with defects.
• the defects can arise in particular as a result of imperfections in the manufacturing processes, the treatment steps or as a result of degradation.
• the defects include in particular impurities, residual process materials, scratches and/or foreign bodies, in particular dust and/or particles.
• the method according to the invention is, in particular in contrast to conventional production methods, fundamentally tolerant of defects and therefore represents an advantage for industrial production. In particular, a production error rate can be reduced.
• one or more further layers of the first layer stack and/or the second layer stack can have the textured surface and/or the rough surface.
• the further layers can in particular be layers which have a layer thickness of greater than 5 ⁇ m, in particular greater than 10 ⁇ m.
• the further layer can be the absorber layer, in particular the solar cell.
• the solar cell can be selected from the group consisting of: a silicon solar cell, a perovskite solar cell. Other solar cells are also conceivable.
• the further layer can be the perovskite layer.
• the textured surface of a layer or of the substrate can be continued by applying additional layers, in particular additional layers with a layer thickness of less than 5 ⁇ m, within the first layer stack or within the second layer stack.
• electrode basically refers to any electron and/or hole conductor which interacts with at least one other electrode, with a medium between each two of these electrodes being located with which these electrodes interact.
• the electrode can comprise at least one electrically conductive material.
• the first electrode of the first layer stack can, in particular, be transparent.
• the first electrode can in particular have at least one transparent conductive oxide selected from the group consisting of: indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), hydrogen-doped indium oxide (IO:H), aluminum undoped zinc oxide (AZO).
• ITO indium tin oxide
• IZO indium zinc oxide
• FTO fluorine-doped tin oxide
• IO:H hydrogen-doped indium oxide
• AZO aluminum undoped zinc oxide
• the first electrode can have at least one metal selected from the group consisting of: gold, silver, aluminum, copper, molybdenum (Mo).
• the first electrode can be formed as a layer.
• the first electrode can be produced in particular by means of at least one deposition method selected from the group consisting of: sputtering, electron beam evaporation, thermal evaporation. In principle, however
• the second electrode of the second layer stack can in particular have at least one transparent conductive oxide selected from the group consisting of: indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), hydrogen-doped indium oxide (IO:H), aluminum-doped zinc oxide (AZO).
• the second electrode can have at least one metal selected from the group consisting of: gold, silver, aluminum, copper.
• Other materials are also conceivable in principle.
• the second electrode can in particular have a combination of two or more materials.
• the combination can comprise two or more materials on top of one another and/or two or more materials next to one another.
• the combination can include narrow gold lines on a continuous ITO layer.
• the second electrode can in particular be formed as a layer.
• the second electrode can be produced in particular by means of at least one deposition method selected from the group consisting of: sputtering, electron beam evaporation, thermal evaporation. In principle, however, other methods are also conceivable.
• the first electrode and/or the second electrode can have at least one conductive oxide and can have a layer thickness of 15 nm to 300 nm, preferably 50 nm to 200 nm, particularly preferably 100 nm to 150 nm.
• the first electrode and/or the second electrode can also have at least one metal and can have a layer thickness of 10 nm to 200 nm, preferably 50 nm to 100 nm.
• the first electrode and/or the second electrode can each be formed as a layer, in particular as a layer of the first layer stack or of the second layer stack.
• the first electrode and/or the second electrode can therefore be designed as a layer electrode.
• the first electrode and/or the second electrode do not necessarily have to be in the form of a layer.
• the first electrode and / or the second elec rode as a finger electrode, preferably as a finger electrode made of silver (Ag), as a grid or be designed as a grid-like electrode. In principle, other embodiments are also conceivable.
• the term “recombination layer” basically refers to any layer of a solar cell in which recombination takes place, i.e. a spontaneous reunion of electrons with a hole.
• the recombination layer can have at least one transparent conductive oxide selected from the group consisting of: indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), hydrogen-doped indium oxide (IO:H), aluminum-doped zinc oxide (AZO) .
• the recombination layer can have at least one metal selected from the group consisting of: gold, silver, aluminum, copper. Other materials are also conceivable in principle.
• the recombination layer can in particular have a combination of two or more materials.
• the combination can comprise two or more materials on top of each other and/or two or more materials next to each other.
• the recombination layer can be produced in particular by means of at least one separation method selected from the group consisting of: sputtering, electron beam evaporation, thermal evaporation. In principle, however, other methods are also conceivable.
• the recombination layer can have at least one conductive oxide and can have a layer thickness of 1 nm to 100 nm, preferably 5 nm to 50 nm, particularly preferably 10 nm to 20 nm.
• the recombination layer can also have at least one metal and can have a layer thickness of 1 nm to 10 nm, preferably 2 nm to 5 nm.
• the terms “hole transport layer” and “electron transport layer” refer to any charge transport layers that allow the corresponding charge carriers to move.
• the hole transport layer can have at least one organic material selected from the group consisting of: a polymer, PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), PEDOT:PSS (poly(ethylenedioxythio- phene):poly(styrene sulfonate)), Poly-TPD (poly[ N , N '-bis(4-butylphenyl)- N , N '- bis(phenyl)benzidine]), P3HT (poly(3-hexylthiophene)) .
• PTAA poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]
• PEDOT:PSS poly(ethylenedioxythio- phene):poly(styrene sulfonate)
• the hole transport layer can contain at least one material based on small molecules, in particular Spiro-OMe-TAD (2,2',7,7'-tetraakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene ), exhibit.
• the hole transport layer can have at least one self-organizing monolayer selected from the group: 2PACz ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid), (7)MeO-2PACz ([2-(3,6 -dimethoxy-9H-carbazol-9-yl)ethyl] phosphonic acid.
• the hole transport layer can have at least one inorganic material selected from the group consisting of: a metal oxide, in particular copper oxide (CuO), in particular nickel oxide (NiO), cupperiodide (Cul) , copper thiocyanates (CuSCN), wherein the inorganic material can be crystalline or have nanoparticles.
• a metal oxide in particular copper oxide (CuO), in particular nickel oxide (NiO), cupperiodide (Cul) , copper thiocyanates (CuSCN), wherein the inorganic material can be crystalline or have nanoparticles.
• CuO copper oxide
• NiO nickel oxide
• Cul cupperiodide
• CuSCN copper thiocyanates
• Other materials are also conceivable in principle.
• the hole transport layer can also be doped with one of the materials from the group consisting of: Li-TFSI (lithium bis(trifluoromethanesulfonyl)imide), TBP (4-tert-butylpyridine), FK209 (tris[2-(1H-pyrazole-1 -yl)-4-tert-butylpyridine] - cobalt(III), tri s [bis(trifluoromethylsulfonyl)imide]), F4-TCNQ (2,3,5,6-tetrafluoro-7,7,8 ,8-tetracyanoquinodimethane).
• the hole transport layer can in particular have a combination of two or more materials.
• the combination can include two or more materials on top of each other and/or two or more materials next to each other and/or a mixture of two or more materials.
• the hole transport layer can be produced in particular by means of at least one deposition method selected from the group consisting of: sputtering, electron beam evaporation, thermal evaporation, rotary coating, doctor blade coating, inkjet printing. In principle, however, other methods are also conceivable.
• the electron transport layer can have at least one organic material selected from the group consisting of: PCBM (6,6-phenyl C61 butyric methyl ester), ICBA (indene-C60 bisadduct), C60. Furthermore, the electron transport layer can have at least one inorganic material selected from the group consisting of: a metal oxide, in particular tin oxide (SnCh), in particular titanium oxide (TiO 2 ), wherein the organic material can be crystalline or can have nanoparticles. Other materials are also conceivable in principle. In particular, the electron transport layer can have a combination of two or more materials. The combination can include two or more materials on top of each other and/or two or more materials next to each other and/or a mixture of two or more materials.
• the electron transport layer can be produced in particular by means of at least one deposition process selected from the group consisting of: sputtering, electron beam evaporation, thermal evaporation, spin coating, doctor blade coating, ink jet printing. In principle, however, other methods are also conceivable.
• the electron transport layer and the hole transport layer can each have a layer thickness of from 0 nm to 500 nm, preferably from 10 nm to 200 nm. However, other dimensions are also conceivable in principle.
• the first layer stack and/or the second layer stack can have one or more buffer layers.
• the buffer layer can have at least one material selected from the group consisting of: bathocuproine (BCP), lithium fluoride (LiF), polyflu- oren (PFN).
• BCP bathocuproine
• LiF lithium fluoride
• PFN polyflu- oren
• the buffer layer can have at least one inorganic material comprising nanoparticles, for example based on Al2O3, ZnO or TiCh. Other materials are also conceivable in principle.
• the buffer layer can be applied in particular to the electron transport layer and/or to the hole transport layer. In principle, other configurations are also conceivable.
• the buffer layer can have a material of the hole transport layer or a material of the electron transport layer.
• the buffer layer can in particular have at least one material selected from the group consisting of: PCBM (6,6-phenyl C61 butyric methyl ester); ICBA (indene-C60 bisadduct); C60; a metal oxide, in particular tin oxide (SnO 2 ), in particular titanium oxide (TiO 2 ).
• the metal oxide can in particular be crystalline or can have nanoparticles.
• the buffer layer can have at least one material selected from the group consisting of: a polymer, PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), PEDOT:PSS (poly( ethylenedioxythiophene):poly(styrene sulfonate)), Poly-TPD (poly[ N , N '-bis(4- butylphenyl)- N , N '-bis(phenyl)benzidine]), P3HT (poly(3-hexylthiophene )).
• PTAA poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]
• PEDOT:PSS poly( ethylenedioxythiophene):poly(styrene sulfonate)
• Poly-TPD poly[ N , N '-bis(4- butylphenyl)- N , N '-bis(phenyl)
• the buffer layer can contain at least one material based on small molecules, in particular Spiro-OMeTAD (2,2′,7,7′-tetraakis-(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene ), exhibit.
• the buffer layer can have at least one self-assembling monolayer selected from the group: 2PACz ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid), (7)MeO-2PACz ([2-(3,6-dimethoxy- 9H-carbazol-9-yl)ethyl] phosphonic acid.
• the buffer layer can have at least one inorganic material selected from the group consisting of: a metal oxide, in particular copper oxide (CuO), in particular nickel oxide (NiO), cupperiodide (Cul), Copper thiocyanates (CuSCN), where the inorganic material can be crystalline or have nanoparticles.
• a metal oxide in particular copper oxide (CuO), in particular nickel oxide (NiO), cupperiodide (Cul), Copper thiocyanates (CuSCN), where the inorganic material can be crystalline or have nanoparticles.
• CuO copper oxide
• NiO nickel oxide
• Cul cupperiodide
• CuSCN Copper thiocyanates
• the buffer layer can also be doped with one of the materials from the group consisting of: Li-TFSI (lithium bis(trifluoromethanesulfonyl )imide), TBP (4-tert-butylpyridine), FK209 (tris[2-(lH-pyrazol-l-yl)-4-tert-butylpyridine]-cobalt(III), tris[bis(trifluoromethylsulfonyl) imide]), F4-TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquino-dimethane).
• Li-TFSI lithium bis(trifluoromethanesulfonyl )imide
• TBP 4-tert-butylpyridine
• FK209 tris[2-(lH-pyrazol-l-yl)-4-tert-butylpyridine]-cobalt(III), tris[bis(trifluoromethylsulfonyl
• the buffer layer can have a layer thickness of 0 nm to 30 nm, preferably 10 nm to 20 nm. However, other dimensions are also conceivable in principle.
• the first layer stack and/or the second layer stack can have one or more passivation layers.
• the passivation layer can have at least one material selected from the group consisting of: PEAI/PEABr/PEACl (phenylethylam- monium iodide/bromide/chloride), OAI/OABr/OACl (octylammonium iodide/bromide/chloride), BAI/BABr/BACl (butylammonium iodide/bromide/chloride), LiF (lithium fluoride), PMMA (poly(methyl methacrylate) ), AI2O3 (alumina), Lewis bases, Lewis acids. Other materials are also conceivable in principle.
• the passivation layer can be applied, for example, to the electron transport layer and/or to the hole transport layer. In principle, other configurations are also conceivable.
• the passivation layer can be used for surface functionalization. This fundamentally changes the chemical properties of the adjacent layer.
• the passivation layer can be produced in particular by means of at least one deposition method selected from the group consisting of: spin coating, thermal evaporation, sputtering, electron beam evaporation, doctor blade coating, inkjet printing. In principle, however, other methods are also conceivable.
• the passivation layer can have a layer thickness of 1 nm to 10 nm, preferably 2 nm to 5 nm.
• step c) the first stack of layers is applied to the second stack of layers.
• application refers to a superimposition! against the two layer stacks.
• the first layer stack can have a first final layer.
• the second layer stack can have a second final layer.
• the term “closing layer” basically refers to any layer of a layer stack or a layer structure with several superimposed layers, which is adjacent to an outer environment of the layer stack or the layer structure with one long side of the layer.
• the first layer stack can be applied to the second layer stack in such a way that the first final layer of the first layer stack and the second final layer of the second layer stack lie on top of one another.
• overlying reference is made to the definition of the term “overlying” above in an analogous manner.
• the perovskite layer can form the first final layer and the electron transport layer or the hole transport layer can form the second final layer. This can also be done in the opposite way, ie the perovskite layer can form the second final layer and the electron transport layer or the hole transport layer can form the first final layer.
• the first final layer or the second final layer may be buffer layers, respectively.
• the first layer and/or the second layer can be applied to further layers of the first layer stack or the second layer stack. The first layer and/or the second layer therefore does not necessarily have to be applied to the perovskite layer. As a result of the lamination, the first layer and/or the second layer can in principle be applied to the perovskite layer.
• inorganic hole-transport layers and/or electron-transport layers can be produced from a vacuum phase.
• a high quality and a compact structure can be present here. This is basically not possible or only possible to a limited extent with materials from the liquid phase, which use nanoparticles, for example, and thus always produce porous layers.
• compact layers can contribute to the stability of the component architecture.
• the perovskite layer can be applied to the first layer and/or to the second layer.
• other versions are also conceivable.
• the first layer stack is laminated with the second layer stack.
• laminate basically refers to any material-locking, thermal joining process of at least two elements, in particular without additional auxiliary materials such as adhesives. The two elements can be placed one on top of the other in a hot press and the joining process can be carried out under the influence of temperature and pressure.
• laminate designates in particular any cohesive, thermal joining process of the first final layer of the first layer stack with the second final layer of the second layer stack.
• the term “mechanical connection” basically refers to a connection between two or more elements in such a way that the two or more elements are prevented from becoming detached when the elements are used as intended.
• electrical connection basically refers to a connection between two or more elements in such a way that an electrical contact is formed between the elements, i.e. a charge carrier can be transported via a contact area between the elements.
• more than two layer stacks can also be laminated together during step d).
• the first stack of layers and the second stack of layers can be laminated with at least one further stack of layers, in particular at least one third stack of layers, during step d).
• the first stack of layers and the second stack of layers can be introduced into a hot press.
• the hot press may have a first platen and a second platen.
• the first plate and the second plate can first be heated at a holding pressure, in particular from 5 MPa to 20 MPa.
• a process temperature is reached, the pressure can be increased to a process pressure.
• the process temperature can be in particular between 50°C and 300°C, in particular between 60°C and 150°C.
• the process pressure can in particular be between 10 MPa and 250 MPa, in particular between 20 MPa and 150 MPa.
• step d) can take place at a process temperature of 90° C., a process pressure of 80 MPa and with a duration of 10 minutes.
• the perovskite-based multi-junction solar cell can then be cooled down and the pressure released.
• the order can vary.
• the perovskite-based multi-junction solar cell can first be cooled down and then the pressure can be released.
• the pressure can first be reduced and then the perovskite-based multi-junction solar cell can be cooled down.
• the perovskite layer forms either the layer forming the laminate of the first layer stack or of the second layer stack.
• laminate-forming layer basically refers to a layer of the first stack of layers, which is bonded to a layer of the second stack of layers under the influence of temperature and pressure.
• laminate-forming layer can designate a layer of the second stack of layers, which is bonded to a layer of the first stack of layers under the action of temperature and pressure.
• the perovskite layer can form the laminate-forming layer of the first layer stack and the laminate-forming layer of the second layer stack cannot be a perovskite layer.
• the perovskite layer can form the laminate-forming layer of the second layer stack and the laminate-forming layer of the first layer stack cannot be a perovskite layer.
• the layer forming the laminate can be the first final layer of the first stack of layers or the second final layer of the second stack of layers.
• the laminate-forming layer can be the first final layer of the first stack of layers or the second final layer of the second stack of layers and can comprise a surface treatment.
• a further layer can be applied to the perovskite layer.
• the further layer can in particular be selected from the group consisting of: a buffer layer, a passivation layer.
• Other exemplary embodiments are also conceivable in principle.
• the perovskite layer can be a layer selected from the group consisting of: the first final layer of the first layer stack; the second final layer of the second layer stack; a layer of the first layer stack, which is connected to the first final layer; a layer of the second layer stack, which adjoins the second concluding layer.
• the layer of the first stack of layers which adjoins the first final layer and the layer of the second stack of layers which adjoins the second final layer may also be referred to as layers underlying the first and second final layers, respectively.
• the first layer stack and/or the second layer stack can also optionally include further perovskite layers.
• the perovskite-based multi-junction solar cell can be produced in a monolithic (n+l)-terminal connection by multiple lamination, where n corresponds to a number of absorber layers. In this way, a series connection with (n+1) contacts can be established. Each electrode or between electrodes can be contacted and/or interconnected by offsetting the layer stack. In principle, other approaches are also conceivable.
• the perovskite of the perovskite layer can be present in the solid phase.
• phase refers to a physical state of a substance that can be transformed into another physical state simply by changing the temperature and/or pressure. Therefore, the perovskite layer can be a solid layer.
• further layers of the first layer stack in particular the first electrode and/or the first layer, and/or further layers of the second layer stack, in particular the second electrode, and/or the absorber layer, and/or the recombination layer and/or the buffer layer and/or the second layer are in the solid phase before carrying out step d).
• Step d) a connection between the first layer stack and the second layer stack can be established by recrystallizing the solid perovskite layer.
• Steps a) to d) can be adhesive-free process steps.
• the term “adhesive-free process step” basically refers to a process step that takes place without using any adhesive. There is no need to use an additional adhesive, also as an add-on in other layers of the stack. This eliminates the need for an additional layer of adhesive.
• only optical and electrical functional layers can be present in the perovskite-based multi-junction solar cell. Additional optical, mechanical and/or electrical losses can therefore be avoided in principle. In principle, this can lead to a high stability of the perovskite-based multi-junction solar cell.
• the efficiency of the perovskite-based multi-junction solar cell can be increased.
• the method according to the invention can thus be a scalable process, since no liquid phase is involved in the connection of the first Layer stack is present with the second layer stack. Furthermore, a simple construction element structure can be present. Production costs can basically be reduced.
• perovskite-based multiple solar cells with different configurations by means of the method according to the invention.
• the method according to the invention enables new configurations of the first stack of layers and/or the second stack of layers that are fundamentally not accessible with existing methods.
• electron transport layers and/or hole transport layers can also be produced from compact and/or continuous layers.
• the layers can be non-porous layers.
• the layers cannot be nano- and/or microparticle-based layers.
• combinations can be produced which include perovskite, an electron transport layer with at least one material selected from the group consisting of: SnCh, T1O2, cadmium-selenium quantum dots (Cd x Se y ), tungsten oxide (W x O y ), strontium titanate (SrTiCb), tin oxide (ZnO), and a hole transport layer with at least one other material selected from the group consisting of: nickel oxide (NiO x ), (copper oxide) CO, copper thiocyanate (CuSCN), copper oxide (CuO x ), copper-chromium oxide (Cu:CrO x ), molybdenum(VI) oxide (M0O3), vanadium oxide (V x O y ),
• the perovskite layer can have a layer thickness of 800 nm to 10 ⁇ m, in particular from 1 ⁇ m to 5 ⁇ m. Furthermore, the perovskite layer can have a layer thickness of 50 nm to 800 nm, in particular 500 nm to 600 nm.
• a thick perovskite layer can compensate for a texture or roughness on an upper side of the absorber layer and ensure at least almost complete coverage.
• the perovskite layer can adapt to the texture of the absorber layer and can have a defined/controlled texture, such as a planar, a rough or a structured texture, on a side facing away from the texture of the absorber layer.
• a stack of layers can in principle be laminated several times.
• a stack of layers can be laminated multiple times onto another stack of layers.
• a substrate for example a planar silicon wafer, a planar glass, or another substrate can be used on which, for example, an anti-adhesion layer made of polydimethylsiloxane (PDMS), polytetrafluoroethylene (PTFE), FTO, ITO, SnO 2 , NiO x is applied can be.
• PDMS polydimethylsiloxane
• PTFE polytetrafluoroethylene
• FTO tetrafluoroethylene
• ITO ITO
• SnO 2 SnO 2
• NiO x NiO x
• Other layers, from which the layer stack can be detached again as a unit from the non-stick layer after lamination, are also fundamentally possible.
• a multiple solar cell can be produced by multiple lamination of one layer stack onto another layer stack, which can have, for example, more than two absorb
• the perovskite layer can be formed as a planar layer.
• a planar formation of the perovskite layer can be produced by laminating a detachable layer onto the perovskite layer. A limitation in the processing of the multi-junction solar cell due to a rough perovskite layer can thus be avoided.
• the perovskite-based multiple solar cell can in particular have more than two absorbers.
• the perovskite-based multiple solar cell with more than two absorbers can in particular have more than two layer stacks which are laminated together. An efficiency of the perovskite-based multi-junction solar cell can thus be increased.
• the perovskite-based multi-junction solar cell can have more than two absorbers.
• other configurations are also conceivable.
• the perovskite-based multi-junction solar cell can have three absorbers, a perovskite layer, a first absorber layer and a second absorber layer.
• the first and/or the second absorber layer can have a material selected from the group consisting of: perovskite, crystalline or amorphous silicon, copper indium gallium diselenide (CIGS), cadmium telluride (CdTe), gallium arsenide (GaAs), Germanium (Ge), indium gallium arsenide (InGaAs), indium gallium phosphide (InGaP).
• CIGS copper indium gallium diselenide
• CdTe cadmium telluride
• GaAs gallium arsenide
• Germanium Ge
• InGaAs indium gallium arsenide
• InGaP indium gallium phosphide
• the layer stacks can in particular be arranged one on top of the other.
• a perovskite-based multi-junction solar cell includes at least a first layer stack.
• the first layer stack has at least one first electrode and at least one first layer up.
• the first layer stack can have at least one substrate.
• the perovskite-based multi-junction solar cell includes at least one second layer stack.
• the second layer stack has at least one absorber layer and at least one second layer.
• the second layer stack can have at least one second electrode.
• the second layer stack can have a recombination layer. The first stack of layers is applied to the second stack of layers.
• the first layer stack is laminated to the second layer stack in such a way that at least one connection selected from the group consisting of: a mechanical connection, an electrical connection between the first layer stack and the second layer stack is formed.
• the first layer and the second layer are each selected from the group consisting of: a hole transport layer, an electron transport layer, a buffer layer, a recombination layer, an electrode layer.
• the first layer stack or the second layer stack has a perovskite layer.
• the perovskite layer forms either a layer of the first layer stack or of the second layer stack that forms a laminate.
• the perovskite silicon multiple solar cell can be produced using the method for producing a perovskite-based multiple solar cell, as has already been described or will be described below. With regard to further details on configurations and designs of the perovskite silicon multiple solar cell, reference can therefore be made in an analogous manner to the description above and to the following description of the method for producing a perovskite-based multiple solar cell.
• the first layer stack can have the first electrode.
• the first electrode can be applied to the substrate.
• the substrate can comprise glass, in particular flexible glass.
• the substrate can have a thickness of 50 ⁇ m to 5 mm, in particular from 100 ⁇ m to 250 ⁇ m.
• the first electrode can include indium tin oxide (ITO).
• ITO indium tin oxide
• the first electrode can have a thickness of 100 nm to 500 nm, in particular 120 nm to 300 nm.
• the second layer stack in the exemplary embodiment can have a further substrate, the second electrode can have the absorber layer, and the second layer, which is a recombination layer.
• the further substrate can comprise glass.
• the further substrate can have a thickness of 50 ⁇ m to 5 mm, in particular 1 mm.
• the second electrode can comprise molybdenum (Mo).
• Mo molybdenum
• the second electrode can have a thickness of 0.1 ⁇ m to 2 ⁇ m, in particular from 0.2 ⁇ m to 1 ⁇ m.
• the absorber layer can include a copper indium gallium diselenide (CIGS) solar cell.
• the CIGS solar cell can in particular have a thickness of 1 ⁇ m to 5 ⁇ m.
• a surface of CIGS solar cells can in particular have a square roughness of 1 nm to 2 m2. The surface can in particular be a surface facing away from the further substrate.
• the second layer in particular the recombination layer, can in particular lie on the surface of the CIGS solar cell.
• the second layer can have a thickness of 1 square meter to 5 square meters.
• the recombination layer can in particular include indium tin oxide (ITO).
• ITO indium tin oxide
• the recombination layer can in particular have a thickness of 15 nm to 100 nm, in particular 30 nm to 70 nm.
• the first layer stack and the second layer stack can also each comprise further layers, in particular at least one perovskite layer, in particular with a thickness of 100 nm to 2 m2, in particular from 300 nm to 800 nm, at least one Hole transport layer and/or at least one electron transport layer.
• the hole-transport layer can comprise nickel oxide (NiO x ).
• the hole transport layer made of nickel oxide (NiO x ) can in particular have a thickness of 10 nm to 50 nm, in particular of 20 nm to 30 nm.
• the hole transport layer can in particular comprise a self-organizing monolayer, in particular 2PACz ([2-(9H-carbazol-9-yl)ethyl]phosphonic acid).
• the hole transport layer made of 2PACz can lie on the hole transport layer made of nickel oxide and thus form a double hole transport layer.
• the electron transport layer can in particular comprise tin oxide (SnO x ) and in particular have a thickness of 10 nm to 50 nm, in particular 30 nm to 40 nm.
• the electron transport layer can in particular comprise fullerenes (C60) and in particular have a thickness of 10 nm to 30 nm, in particular 20 nm to 25 nm.
• the electron transport layer made of tin oxide can in particular rest on the electron transport layer made of fullerene and thus form a double electron transport layer.
• the first layer stack can include the hole transport layer and the perovskite layer.
• the hole transport layer can in particular lie on the first electrode.
• the perovskite layer can in particular lie on the hole transport layer.
• the second layer stack may include the electron transport layer.
• the electron transport layer can in particular lie on the recombination layer.
• the first layer stack can include the electron transport layer and the perovskite layer.
• the electron transport layer can in particular lie on the first electrode.
• the perovskite layer can in particular lie on the electron transport layer.
• the second layer stack may comprise the hole transport layer.
• the hole transport layer can in particular lie on the recombination layer.
• the first layer stack can comprise the hole transport layer.
• the hole-transport layer can lie on the first electrode.
• the second layer stack can include the electron transport layer and the perovskite layer.
• the electron transport layer can in particular lie on the recombination layer.
• the perovskite layer can lie on the electron transport layer.
• the first layer stack can include the electron transport layer.
• the electron transport layer can in particular lie on the first electrode.
• the second layer stack can include the hole transport layer and the perovskite layer.
• the hole transport layer can in particular lie on the recombination layer.
• the perovskite layer can lie on the hole-transport layer.
• the first layer stack can include the hole transport layer and the perovskite layer.
• the hole transport layer can in particular lie on the first electrode.
• the perovskite layer can in particular rest on the hole transport layer.
• the second layer stack can include the electron transport layer and a further perovskite layer.
• the electron transport layer can in particular lie on the recombination layer.
• the further perovskite layer in particular, can lie on the electron transport layer.
• the first layer stack can include the electron transport layer and the perovskite layer.
• the electron transport layer can in particular lie on the first electrode.
• the perovskite layer can in particular lie on the electron transport layer.
• the second layer stack can include the hole transport layer and the further perovskite layer.
• the hole-transport layer can lie in particular on the recombination layer.
• the further perovskite layer can lie in particular on the hole-transport layer.
• the first layer stack can include the hole transport layer.
• the hole-transport layer can lie on the first electrode.
• the second layer stack can include the electron transport layer, the perovskite layer and the further perovskite layer.
• the Electron transport layer can in particular lie on the recombination layer.
• the perovskite layer can in particular lie on the electron transport layer.
• the further perovskite layer in particular, can rest on the perovskite layer.
• the perovskite layer and the further perovskite layer can in particular be applied one after the other by sequential lamination.
• the first layer stack can include the electron transport layer.
• the electron transport layer can in particular lie on the first electrode.
• the second layer stack can include the hole transport layer, the perovskite layer and the further perovskite layer.
• the hole transport layer can overlie the recombination layer.
• the perovskite layer can in particular rest on the hole transport layer.
• the additional perovskite layer can rest in particular on the perovskite layer.
• the first layer stack can have the substrate, the first electrode, two first layers and the perovskite layer.
• the first electrode can be placed on the substrate.
• the two first layers can be applied to the first electrode.
• the perovskite layer can be applied to the first two layers.
• the first two layers can in particular be electron transport layers, in particular two essentially superimposed electron transport layers.
• the substrate can comprise polyethylene naphthalate (PEN).
• the substrate can be or comprise a film made of polyethylene naphthalate (PEN).
• the substrate can have a thickness of 125 ⁇ m.
• the first electrode can have indium tin oxide (ITO).
• the first electrode can have a thickness of 300 nm.
• the two first layers can in particular be two electron transport layers, in particular a first electron transport layer and a second electron transport layer.
• the first electron transport layer can comprise tin oxide (SnO x ).
• the first electron transport layer can in particular have a thickness of 35 nm.
• the second electron transport layer can in particular include fullerenes (C60).
• the second electron transport layer can in particular have a thickness of 20 nm.
• the perovskite layer can be Cso .i (MAo .i 7FAo . 83)o . 9Pb(Io . 83Bro .i 7)3.
• the perovskite layer in particular can have a thickness of 370 nm.
• the second layer stack can in particular have the second electrode, the absorber layer, and three second layers.
• the absorber layer can be applied to the second electrode.
• the three second layers can be applied to the absorber layer.
• the three second layers can be, in particular, two hole-transport layers and a recombination layer, in particular three second layers lying essentially one on top of the other.
• the second electrode can have indium tin oxide (ITO).
• ITO indium tin oxide
• the second electrode can in particular have a thickness of 70 nm.
• the absorber layer can in particular comprise a silicon solar cell.
• the silicon solar cell can in particular have the following architecture: a-Si:H ⁇ n>/a-Si:H ⁇ i>/c-Si wafer ⁇ n>/a-Si:H ⁇ i>/a-Si:H ⁇ p>.
• a heterojunction can be present.
• the silicon solar cell can in particular be polished on both sides. In particular, the silicon solar cell can have a thickness of 280 ⁇ m.
• the recombination layer can rest on the absorber layer.
• the recombination layer can include indium tin oxide (ITO).
• ITO indium tin oxide
• the recombination layer can in particular have a thickness of 30 nm.
• the two hole-transport layers in particular a first hole-transport layer and a second hole-transport layer, can lie on the recombination layer.
• the first hole transport layer can in particular lie on the recombination layer and the second hole transport layer can lie in particular on the first hole transport layer.
• the first hole-transport layer can comprise nickel oxide (NiO x ).
• the first hole-transport layer can have a thickness of 20 nm.
• the second hole transport layer may comprise a self-assembling monolayer, in particular 2PACz ([2-(9H-carbazol-9-yl)ethyl]phosphonic acid).
• the substrate can be made of glass.
• the substrate can have a thickness of 1 mm.
• the first electrode may include indium tin oxide.
• the first electrode can have a thickness of 100 nm or 150 nm.
• the electron transport layer may include tin oxide (SnCh).
• the electron transport layer can have a thickness of 10 nm or 20 include nm.
• the perovskite layer can have a thickness of 350 nm or 700 nm.
• the hole transport layer can comprise PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) and have a thickness of 5 nm or 10 nm.
• the perovskite-based multi-junction solar cell can have a further hole transport layer.
• the further hole transport layer can comprise nickel oxide (NiO x ).
• the further hole transport layer can have a thickness of 10 nm or 20 nm.
• the recombination layer may include indium tin oxide.
• the recombination layer can have a thickness of 15 nm or 70 nm.
• the perovskite-based multiple solar cell can include a silicon solar cell.
• the silicon solar cell can have a thickness of 200 pm or 300 pm.
• the substrate can be made of glass.
• the substrate can have a thickness of 1 mm.
• the first electrode may include indium tin oxide.
• the first electrode can have a thickness of 100 nm.
• the electron transport layer may include tin oxide (SnCh).
• the electron transport layer may have a thickness of 10 nm.
• the perovskite layer can have a thickness of 350 nm.
• the hole transport layer may include nickel oxide (NiO x ).
• the hole transport layer can have a thickness of 10 nm.
• the recombination layer may comprise indium tin oxide.
• the recombination layer can have a thickness of 15 nm.
• the perovskite-based multi-junction solar cell can include a silicon solar cell.
• the silicon solar cell can have a thickness of 200 ⁇ m.
• the perovskite-based multi-junction solar cell can have a further recombination layer.
• the further recombination layer can comprise indium tin oxide.
• the further recombination layer can have a thickness of 15 nm.
• the perovskite-based multi-junction solar cell can have the further hole transport layer.
• the further hole transport layer can include PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]).
• the further hole transport layer can have a thickness of 5 nm.
• the perovskite-based multi-junction solar cell can have an absorber layer.
• the absorber layer may include perovskite.
• the absorber layer can have a thickness of 300 nm.
• the perovskite-based multi-junction solar cell can have a further electron transport layer.
• the further electron transport layer can comprise tin oxide (SnCh).
• the further electron transport layer can have a thickness of 10 nm.
• the second electrode may include indium tin oxide.
• the second electrode can have a thickness of 100 nm.
• the perovskite-based multi-junction solar cell can have a further substrate.
• the further substrate can be made of polyethylene naphthalate.
• the further substrate can have a thickness of 125 ⁇ m.
• Electrode, buffer and/or passivation layers can in principle be processed at higher temperatures under the perovskite layer of the first layer stack and/or the second layer stack. Properties of the electrode, buffer and/or passivation layers that are processed at higher temperatures can fundamentally be improved compared to electrode, buffer and/or passivation layers that are processed at lower temperatures on a layer stack. In principle, improved long-term stability of perovskite-based multi-junction solar cells can still be achieved.
• the lamination process is particularly suitable for scale-up processes such as roll-to-roll production.
• a parallelization can be achieved by the separate production of the layer stack.
• the larger selection of materials results in a larger selection of possible processes for producing the layers.
• Lamination increases process choices.
• scalable processes are possible in principle. Homogeneity problems in liquid phase processes can thus be avoided.
• multiple solar cells can be produced inexpensively with a simultaneous high throughput.
• Lamination makes fundamentally new solar cell architectures possible. This basically opens up the possibility of higher efficiencies and improved stability.
• the fact that the perovskite layer forms either a layer of the first layer stack or of the second layer stack that forms a laminate basically leads to a free choice of material for the perovskite-based multi-junction solar cell and to a free choice of the deposition process for the deposition of the hole transport layer, the electron transport layer, and the buffer layer , the recombination layer or the electrode.
• a charge carrier-selective layer, in particular the hole-transport layer or the electron-transport layer, and an electrode/recombination layer can be applied to the perovskite layer.
• Lamination allows the required layers to be produced in front of and/or under the perovskite layer in terms of time. In principle, this can minimize incompatibilities and increase a selection of possible materials and/or manufacturing processes for the layers of the perovskite-based multi-junction solar cell. In addition, the choice of material for the further layer forming the laminate can be fundamentally increased, since this does not necessarily have to be produced on the perovskite layer, but can be applied to one of the layer stacks to be laminated.
• FIGS. 1 A to ID show a method according to the invention for producing a perovskite-based multiple solar cell
• FIGS. 2A to 2H show exemplary embodiments of the first layer stack and the second layer stack
• FIG. 3 shows an exemplary embodiment of a perovskite-based
• FIGS. 4A and 4B show another exemplary embodiment of a first layer stack and a second layer stack of a perovskite-based multi-junction solar cell (FIG. 4A) and measurement data of the exemplary embodiment (FIG. 4B); and
• FIGS. 5A to 5H further exemplary embodiments of a first layer stack and a second layer stack of a perovskite-based multiple solar cell.
• Figures 1A to ID show a method according to the invention for producing a perovskite-based multiple solar cell 110.
• the perovskite-based multiple solar cell 110 is shown in Figure IC.
• Figure 1A shows a first layer stack 112 and a second layer stack 114.
• Figure 1B shows the lamination of the first layer stack 112 and the second layer stack 114, and
• Figure ID shows an exemplary example of process parameters in a graphical plot.
• the first layer stack 112 is placed on a substrate 116.
• FIG. The first layer stack 112 has a first electrode 118 which can be formed as a layer on the substrate 116 .
• the first layer stack 112 has a first layer 120 .
• the first layer 120 may be formed on the first electrode 118 .
• the first layer 120 can be a hole transport layer 122 in this exemplary embodiment.
• the first layer stack 112 can have a perovskite layer 124 in this exemplary embodiment.
• the perovskite layer 124 can form a first final layer 126 of the first layer stack 112 .
• the second layer stack 114 can have a second electrode 128 . Furthermore, the second layer stack 114 has an absorber layer 130 . The absorber layer 130 can be formed on the second electrode 128 . Furthermore, the second layer stack 114 has a recombination layer 132 . The recombination layer 132 can be formed on the absorber layer 130 . Furthermore, the second layer stack 114 has a second layer 134 . The second layer 134 can be an electron transport layer 136 in this exemplary embodiment. The second layer 134 can be formed on the recombination layer 132 . The second layer 134 can form a second final layer 138 of the second layer stack 114 .
• the first stack of layers 112 and the second stack of layers 114 can be placed in a hot press for lamination.
• the first layer stack 112 and the second layer stack 114 can be placed one on top of the other in such a way that the first final layer 126 of the first layer stack 112 and the second final layer 138 of the second layer stack 114 rest on one another.
• a bottom platen 140 and a top platen 142 of the hot press are shown.
• the perovskite layer can recrystallize under pressure and temperature, and a mechanical and electrical connection can form between the first layer stack 112 and the second layer stack 114 .
• the perovskite-based multi-junction solar cell 110 is shown in FIG. Incident light is shown schematically with arrow 144 .
• the process parameters temperature T in °C and pressure in MPa are shown graphically as a function of time t in min as an example.
• the procedure can be divided into three phases. In a heating-up phase 146, the temperature can rise. In a lamination phase 148, in which the recrystallization of the perovskite layer takes place, the temperature can be kept essentially constant. At the beginning of the lamination phase 148, a pressure increase can occur. In a cooling phase 150, the temperature can drop continuously. During the cooling phase 150 the pressure can be reduced.
• Figures 2A to 2H show exemplary embodiments of the first layer stack 112 and the second layer stack 114.
• the first layer stack 112 and the second layer stack 114 correspond at least in part to the first layer stack 112 and the second layer stack 114 according to Figure 1A, so that the description of the Figure 1A above can be referenced.
• the first layer stack 112 has the electron transport layer 136 in FIG. 2A and the second layer stack 114 has the hole transport layer 122 .
• the hole transport layer 122 forms the second final layer 138.
• the perovskite layer 124 forms the first final layer 126 from.
• the second layer stack 114 has the perovskite layer 124 in FIG. 2B.
• the perovskite layer 124 forms the second final layer 138.
• the hole transport layer 122 forms the first final layer 126.
• the electron transport layer 136 forms the first final layer 126.
• the first layer stack 112 and the second layer stack 114 according to FIG. 2C correspond at least largely to the first layer stack 112 and the second layer stack 114 according to FIG. 2B.
• the first layer 120 is the electron transport layer 136 and the second layer 134 is the hole transport layer 122.
• the second layer 134 is the electron transport layer 136 which forms the second final layer 138 .
• the first layer stack 112 has two first layers 120, an inner hole transport layer 122 and a buffer layer 137.
• the buffer layer 137 is arranged on the perovskite layer 124 and forms the first final layer 126.
• the first layer stack 112 and the second layer stack 114 according to FIG. 2E correspond at least largely to the first layer stack 112 and the second layer stack 114 according to FIG. 2D.
• the second final layer 138 is the hole transport layer 122.
• the first layer stack 112 has two first layers 120, an internal electron transport layer 136 and the buffer layer 137.
• the buffer layer 137 is arranged on the perovskite layer 124 and forms the first final layer 126.
• the first layer stack 112 has the electron transport layer 136 .
• the second layer stack 114 has the perovskite layer 124 and two second layers 134, an inner hole transport layer 122 and the buffer layer 137.
• the buffer layer 137 forms the second final layer 138.
• the first layer stack 112 and the second layer stack 114 according to FIG. 2G correspond at least largely to the first layer stack 112 and the second layer stack 114 according to FIG. 2F.
• the first layer 120 is the hole transport layer 122.
• the second layer stack 114 has the perovskite layer 124 and two second layers 134, an internal electron transport layer 136 and the buffer layer 137.
• the buffer layer 137 forms the second final layer 138.
• the first layer stack 112 has the hole transport layer 122 in FIG. 2H and the second layer stack 114 has the electron transport layer 136 .
• the electron transport layer 136 forms the second final layer 138.
• the perovskite layer 124 forms the first final layer 126 from.
• FIG. 3 shows an exemplary embodiment of a perovskite-based multiple solar cell 110.
• the perovskite-based multiple solar cell 110 has a second electrode 128 made of silver with a thickness of 100 nm.
• the silicon solar cell 152 can have a thickness of approximately 300 ⁇ m.
• An ITO layer with a layer thickness of 70 nm can be located between the second electrode 128 and the silicon solar cell 152 (not shown in FIG. 3).
• the recombination layer 132 is applied to the silicon solar cell 152 with a thickness of 70 nm.
• the recombination layer 132 can have a thickness of 35 nm.
• the recombination layer 132 may include indium tin oxide.
• a hole transport layer 122 made of nickel oxide with a thickness of 20 nm is applied to the recombination layer 132.
• a further hole transport layer 122 made of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine is applied to the hole transport layer 122 ] with a thickness of less than 10 nm.
• the further hole transport layer 122 can be 2PACz ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid).
• the perovskite layer 124 is applied to the further hole transport layer 122 with a thickness of 370 nm.
• the electron transport layer 136 made of tin oxide is applied to the perovskite layer 124 with a thickness of 20 nm.
• the first electrode 118 is made of indium tin oxide and has a thickness of 100 nm to 150 nm.
• the substrate 116 forms a film of polyethylene naphthalate with a thickness of 125 ⁇
• Figure 4A shows another exemplary embodiment of a first layer stack 112 and a second layer stack 114 of a perovskite-based multi-junction solar cell 110.
• the first layer stack 112 can include the substrate 116 , the first electrode 118 , two first layers 120 and the perovskite layer 124 .
• the first electrode 118 can be applied to the substrate 116 .
• the two first layers 120 can be applied to the first electrode 118 .
• the perovskite layer 124 can be applied to the two first layers 120 .
• the two first layers 120 can be electron transport layers 136, in particular two electron transport layers 136 lying essentially on top of one another.
• the substrate 116 may comprise polyethylene naphthalate (PEN).
• PEN polyethylene naphthalate
• the substrate 116 may be or include a film of polyethylene naphthalate (PEN).
• the substrate 116 can have a thickness of 125 ⁇ m.
• the first electrode 118 may include indium tin oxide (ITO).
• ITO indium tin oxide
• the first electrode 118 may have a thickness of 300 nm.
• the two first layers 120 can be two electron transport layers 136, in particular a first electron transport layer 154 and a second electron transport layer 156.
• the first electron transport layer 154 may include tin oxide (SnO x ).
• the first electron transport layer 154 may have a thickness of 35 nm.
• the second electron transport layer 156 may include fullerenes (C60).
• the second electron transport layer 156 may have a thickness of 20 nm.
• the perovskite layer 124 may be Cso .i (MAo .i 7FAo . 83)o . 9Pb(Io . 83Br 0.i 7)3.
• the perovskite layer 124 may have a thickness of 370 nm.
• the second layer stack 114 can have the second electrode 128 , the absorber layer 130 and three second layers 134 .
• the absorber Layer 130 may be applied.
• the three second layers 134 can be applied to the absorber layer 130 .
• the three second layers 134 can be a recombination layer 132 and two hole-transport layers 122, in particular three second layers 134 lying essentially one on top of the other.
• the second electrode 128 may include indium tin oxide (ITO).
• ITO indium tin oxide
• the second electrode 128 may have a thickness of 70 nm.
• the absorber layer 130 may include a silicon solar cell 152 .
• the silicon solar cell 152 can have the following architecture: a-Si:H ⁇ n>/a-Si:H ⁇ i>/c-Si wafer ⁇ n>/a-Si:H ⁇ i>/a-Si: H ⁇ p>. A heterojunction can be present.
• the silicon solar cell 152 can be polished on both sides.
• the silicon solar cell 152 can have a thickness of 280 ⁇ m.
• the recombination layer 132 can lie on the absorber layer 130 .
• the recombination layer 132 may include indium tin oxide (ITO).
• ITO indium tin oxide
• the recombination layer 132 may have a thickness of 30 nm.
• the two hole transport layers 122 in particular a first hole transport layer 158 and a second hole transport layer 160, can lie on the recombination layer 132.
• the first hole transport layer 158 can lie on the recombination layer 132 and the second hole transport layer 160 can lie on the first hole transport layer 158.
• the first hole transport layer 158 may include nickel oxide (NiO x ).
• the first hole transport layer 158 may have a thickness of 20 nm.
• the second hole transport layer 160 may comprise a self-assembled monolayer, specifically 2PACz ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid).
• the perovskite-based multi-junction solar cell 110 according to FIG. 4A can be produced with the following lamination parameters: 80 MPa, 90° C., 5 min.
• the perovskite-based multiple solar cell 110 according to FIG. 4A can in particular be a laminated monolithic silicon/perovskite multiple solar cell.
• the perovskite-based multiple solar cell 110 according to FIG. 4A can have an efficiency of 20.6%, an open-circuit voltage of 1.75 V, a short-circuit current density of 16.0 mA/cm 2 and a filling factor of 73.7%.
• FIG. 4B shows measurement data of the exemplary embodiment according to FIG. 4A.
• a current density J in mA/cm 2 as a function of a voltage U in V is shown.
• the solid line shows a reverse measurement
• the dashed line shows a forward measurement.
• the efficiency of 20.6% described above, the no-load voltage of 1.75 V, the short-circuit current density of 16.0 mA/cm 2 and the fill factor of 73.7% of a perovskite-based multi-junction solar cell 110 can be read from the JU curve.
• the maximum power point is at (1.45 V; 14.2mA/cm 2 ) in reverse measurement, which corresponds to an output power of 20.6mW/cm 2 .
• the open circuit voltage of a perovskite-based multijunction solar cell 110 approximates the voltage addition of both perovskite and silicon solar cells, showing that both solar cells contribute to the performance.
• the current density-voltage characteristics including the low hysteresis underscores that the perovskite layer 124 and silicon solar cell 152 are of high quality despite the high temperature and pressure applied during the lamination process and no serious degradation is expected .
• Figures 5A to 5H show further exemplary embodiments of a first layer stack 112 and a second layer stack 114 of a perovskite-based multiple solar cell 110.
• the first layer stack 112 can have the substrate 116 and the first electrode 118.
• the first electrode 118 can be applied to the substrate 116 .
• the substrate 116 can comprise glass, in particular flexible glass.
• the substrate 116 can have a thickness of 50 ⁇ m to 5 mm, in particular from 100 ⁇ m to 250 ⁇ m.
• the first electrode 118 may include indium tin oxide (ITO).
• ITO indium tin oxide
• the first electrode 118 can have a thickness of 100 nm to 500 nm, in particular of 120 nm to 300 nm.
• the second layer stack 114 can have a further substrate 162, the second electrode 128, the absorber layer 130 and a second layer 134, which is a recombination layer 132.
• the further substrate 162 can comprise glass.
• the further substrate 162 can have a thickness of 50 ⁇ m to 5 mm, in particular 1 mm.
• the second electrode 128 may include molybdenum (Mo).
• Mo molybdenum
• the second electrode 128 may have a thickness of 0.1 mil to 2 mil, more preferably 0.2 mil to 1 mil.
• the second electrode 128 can be arranged between the additional substrate 162 or the absorber layer 130 .
• the absorber layer 130 may include a copper indium gallium diselenide (CIGS) solar cell 164 .
• the CIGS solar cell 164 may have a thickness of 1 mil to 5 mils.
• a surface 168 of the CIGS solar cell 164 may have a square roughness of 1 nm to 2 mil.
• the surface 168 can be a surface facing away from the further substrate 162 .
• the second layer 134, in particular the recombination layer 132, can lie on the surface 168 of the CIGS solar cell 164 with a thickness of 1 gm to 5 gm.
• the recombination layer 132 may include indium tin oxide (ITO).
• ITO indium tin oxide
• the recombination layer 132 can have a thickness of 15 nm to 100 nm, in particular of 30 nm to 70 nm.
• the first layer stack 122 and the second layer stack 114 of the exemplary embodiments according to FIGS. 5A to 5H can also each include further layers, in particular at least one perovskite layer 124 with a thickness of 100 nm to 2 ⁇ m, in particular from 300 nm to 800 nm. a hole transport layer 122 and an electron transport layer 136.
• the hole transport layer 122 may include nickel oxide (NiO x ).
• the hole transport layer 122 made of nickel oxide (NiO x ) can have a thickness of 10 nm to 50 nm, in particular of 20 nm to 30 nm.
• the hole transport layer 122 may comprise a self-assembling monolayer, specifically 2PACz ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid).
• the electron transport layer 136 may comprise tin oxide (SnO x ) and have a thickness of 10 nm to 50 nm, in particular 30 nm to 40 nm.
• the electron transport layer 136 can include fullerenes (C60) and have a thickness of 10 nm to 30 nm, in particular 20 nm to 25 nm.
• the first layer stack 112 can comprise the hole transport layer 122 and the perovskite layer 124.
• the hole transport layer 122 may overlie the first electrode 118 .
• Perovskite layer 124 may overlie hole transport layer 122 .
• the second layer stack 114 can comprise the electron transport layer 136. Electron transport layer 136 may overlie recombination layer 132 .
• the first layer stack 112 can include the electron transport layer 136 and the perovskite layer 124 .
• Electron transport layer 136 may overlie first electrode 118 .
• Perovskite layer 124 may overlie electron transport layer 136 .
• the second layer stack 114 can comprise the hole transport layer 122.
• Hole transport layer 122 may overlie recombination layer 132 .
• the first layer stack 112 can comprise the hole transport layer 122.
• the hole transport layer 122 may overlie the first electrode 118 .
• the second layer stack 114 can comprise the electron transport layer 136 and the perovskite layer 124. Electron transport layer 136 may overlie recombination layer 132 . Perovskite layer 124 may overlie electron transport layer 136 .
• the first layer stack 112 can comprise the electron transport layer 136. Electron transport layer 136 may overlie first electrode 118 .
• the second layer stack 114 can include the hole transport layer 122 and the perovskite layer 124.
• Hole transport layer 122 may overlie recombination layer 132 .
• Perovskite layer 124 may overlie hole transport layer 122 .
• the first layer stack 112 can include the hole transport layer 122 and the perovskite layer 124.
• the hole transport layer 122 may overlie the first electrode 118 .
• Perovskite layer 124 may overlie hole transport layer 122 .
• the second layer stack 114 can comprise the electron transport layer 136 and a further perovskite layer 166.
• the Electron transport layer 136 may overlie recombination layer 132 .
• the other perovskite layer 166 may overlie the electron transport layer 136 .
• the first layer stack 112 can comprise the electron transport layer 136 and the perovskite layer 124. Electron transport layer 136 may overlie first electrode 118 . Perovskite layer 124 may overlie electron transport layer 136 .
• the second layer stack 114 can include the hole transport layer 122 and the further perovskite layer 166.
• Hole transport layer 122 may overlie recombination layer 132 .
• the further perovskite layer 166 can lie on the hole transport layer 122 .
• the first layer stack 112 can comprise the hole transport layer 122.
• Hole transport layer 122 may overlie first electrode 118 .
• Electron transport layer 136 may overlie recombination layer 132 .
• Perovskite layer 124 may overlie electron transport layer 136 .
• the further perovskite layer 166 can lie on the perovskite layer 124.
• the perovskite layer 124 and the further perovskite layer 166 can be applied one after the other by sequential lamination.
• the first layer stack 112 can comprise the electron transport layer 136. Electron transport layer 136 may overlie first electrode 118 .
• the hole transport layer 122 may overlie the recombination layer 132 .
• Perovskite layer 124 may overlie hole transport layer 122 .
• the other perovskite layer 166 may overlie the perovskite layer 124 .

Landscapes

• Electromagnetism (AREA)
• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Materials Engineering (AREA)
• Power Engineering (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Inorganic Chemistry (AREA)
• Manufacturing & Machinery (AREA)
• Crystallography & Structural Chemistry (AREA)
• Photovoltaic Devices (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=80933839

Family Applications (1)

Country Status (5)

Families Citing this family (5)

Family Cites Families (8)

• 2021
  • 2021-02-24 DE DE102021201746.0A patent/DE102021201746A1/de active Pending
• 2022
  • 2022-02-24 CN CN202280016397.6A patent/CN116998252A/zh active Pending
  • 2022-02-24 EP EP22712309.8A patent/EP4298679A1/de active Pending
  • 2022-02-24 WO PCT/EP2022/054677 patent/WO2022180170A1/de active Application Filing
  • 2022-02-24 KR KR1020237032514A patent/KR20230147195A/ko unknown

Also Published As

Similar Documents

Legal Events