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  • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Definitions

• the present invention relates to the field of imaging for infrared (IR) and in particular a radiation detector or photodetector made with hetero-structures based on semiconductor materials of the III-V type. . More particularly, the invention relates to a device for imaging in the short infrared (SWIR) at non-cryogenic temperatures.
• IR infrared
• SWIR short infrared
• Imagers operating in the infrared range are generally formed by assembling a matrix comprising a plurality of elementary pixels based on photodiodes transforming a flux of incident photons into photogenerated charge carriers, and a reading circuit commonly referred to as ROIC for "Read Out Integrated Circuit" in English to process the electrical signal from the pixels of the detector.
• ROIC Read Out Integrated Circuit
• quantum efficiency of a semiconductor-based infrared detector is understood to mean the ratio of the number of electron/hole pairs generated by photoelectric effect to the number of photons passing through the structure of a pixel belonging to the detector of infrared radiation.
• the quantum efficiency depends on the absorption coefficient and the scattering length in the pixel structure along the pixel axis.
• the absorption coefficient depends on the materials used to produce the pixel structure.
• the diffusion coefficient is inversely proportional to the effective mass of the positive (holes) and negative (electron) charge carriers along the pixel axis.
• the quantum efficiency is a fundamental technical characteristic which determines the electro-optical performance of an infrared detector.
• the invention proposes to solve a technical problem in this field consisting in designing a matrix detector operating in the near infrared with a cut-off wavelength greater than 2 ⁇ m by improving the quantum efficiency of the detector compared to state-of-the-art solutions.
• Figure 1 a illustrates a perspective view of an example of a pixel belonging to an infrared radiation matrix detector operating in the infrared frequency domain.
• the illustration is limited to a single pixel Pxl for the sake of simplification but it does not exclude the integration of the pixel in a matrix comprising a plurality of juxtaposed pixels.
• the Pxl pixel of an infrared detector is produced by a stack of layers of semiconductor materials forming the structure of the pixel on a SUB substrate.
• the axis of pixel A is the axis perpendicular to the horizontal plane (x,y) formed by the upper surface of the SUB substrate.
• Substrate SUB is made of a bulk semiconductor material of III-V type for example. The choice of the material of the SUB substrate is important because it determines the technology of the steps of the manufacturing process of the device but also the technical characteristics (optical, electrical, mechanical, etc.) of the matrix detector.
• the pixel Pxl comprises the following layers, starting from the substrate, in the direction of the axis of the pixel A: a lower contact structure CONT_NF, an absorbing planar structure SPA and an upper contact structure CONT_SUP.
• the lower contact structure CONTJNF is made of solid N+ doped semiconductor material and has a maximum energy level of the valence band lower than the maximum energy level of the valence band of the absorbing planar structure SPA .
• the material constituting the lower contact structure is of the III-V type such as, by way of example, gallium arsenide, indium arsenide, gallium nitride, gallium antimonide, boron phosphide, as well as their ternary or quaternary or quinary alloys.
• the lower contact CONTJNF can also be made with hetero-structures obtained by stacking a plurality of thin layers of semi-conductor materials, preferably of III-V type such as, for example, gallium arsenide, indium arsenide, gallium nitride, gallium antimonide, boron, as well as their ternary or quaternary or quinary alloys.
• the lower contact structure CONTJNF constitutes, by way of example, an N+ doped superlattice exhibiting a large energy gap value.
• the planar absorbing structure SPA is made of solid N- doped semi-conductor material (or a heterostructure of the superlattice type) having an energy gap value less than or equal to that of the lower contact structure.
• the characteristics of the band diagram of the absorbing planar structure SPA (valence band, conduction band, gap energy) are intrinsic in the case of a bulk material, or effective resulting from the combination of the different thin layers in the case of a supernet.
• the absorbing planar structure SPA converts the flux of incident photons with a wavelength ⁇ into carriers of negative charges "electrons" in the conduction band (intrinsic or effective) of the structure SPA and of positive charges "holes” in the valence band (intrinsic or effective) of the SPA structure.
• the semiconductor materials used to produce the absorbing planar structure SPA can be of the III-V type such as, by way of example, gallium arsenide, indium arsenide , gallium nitride, gallium antimonide, boron phosphide, as well as their ternary or quaternary or quinary alloys.
• the structure of the energy bands in the planar absorbing structure SPA is decisive for increasing the cut-off frequency of the matrix detector comprising the pixel Pxl.
• the upper contact structure CONT_SUP is made of solid P+ doped semiconductor materials having a high energy gap value. These materials are preferably of III-V type such as, by way of example, gallium arsenide, indium arsenide, gallium nitride, gallium antimonide, boron phosphide, as well as their ternary or quaternary or quinary alloys .
• the lower contact CONT_SUP can also be made with heterostructures obtained by stacking a plurality of thin layers of semi-conductor materials, preferably of III-V type such as, for example, gallium arsenide, indium arsenide, gallium nitride, gallium antimonide, boron phosphide, as well as their ternary or quaternary or quinary alloys.
• the upper contact structure CONT_SUP constitutes, by way of example, an N+ doped superlattice exhibiting a large energy gap value.
• FIG. 1 has illustrated a pixel having a structure obtained by successive deposition and etching operations. A pixel is thus delimited along the plane (x,y) by its three-dimensional structure obtained by the etching operations.
• Figure 1b illustrates a perspective view of a plurality of pixels belonging to a matrix detector in the infrared frequency domain delimited by the P+ doping zones of the upper contact CONT_SUP.
• the characteristics of the different parts of each pixel along its axis A remain the same with respect to FIG. 1a.
• the major difference consists in the manner of delimitation of the pixels in the matrix resulting from the manufacturing process used for the delimitation (etching in 1 a and doping in 1 b).
• FIG. 1c illustrates a sectional view of an example according to the prior art of an infrared detection pixel comprising a planar absorption structure SPA formed by a superlattice SR0.
• the planar structure of absorption SPA is realized in this illustration via a periodic heterostructure which forms the superlattice SR0.
• the SR0 superlattice is a periodic stacking of an elementary group G0 formed by a plurality of thin layers of semiconductor materials.
• the elementary group is formed by the first layer C0 having a thickness eO and the second layer C'0 having a thickness e'0.
• the period of the superlattice is equal to e0+e’0.
• the effective band diagram is defined by: an effective conduction band, BC e ff having a minimum energy value Ec e tf.
• the use of superlattices in the absorbing planar structures of a pixel makes it possible to reach cut-off frequencies that are not accessible with absorption zones based on bulk materials.
• the design choices of the SPA absorbent planar structure cover but are not limited to the composition of the materials used (materials engineering), the use of a bulk or super-lattice material structure and the thicknesses of layers used (structural design of the device). These design choices open up possibilities for controlling the absorption rate of the detector, increasing the cut-off frequency of the matrix detector, improving the quantum efficiency of the pixel and limiting cross-talk noise between adjacent pixels. .
• the technical solution according to the invention relates to improving the performance of matrix detectors in the field of infrared imaging (wavelength from 1 ⁇ m to 70 ⁇ m, therefore including the THz), and in particular the spectra of the SWIR (short-wave infrared, 1 - 2.5pm).
• the focal plane arrays according to the state of the art with an absorbing planar structure in InGaAs material have very good electro-optical performances but they are limited to a cut-off wavelength of 1.7 pm at 300K.
• a technical problem to be solved in this field therefore consists in designing a matrix detector operating in the near infrared with a cut-off wavelength greater than 2 ⁇ m by improving the internal quantum efficiency of the detector compared to the solutions of the state of the art.
• European patent application EP3482421 B1 describes a matrix infrared image detector comprising a plurality of pixels.
• the planar absorption structure of each pixel according to the solution proposed in this application is made by a massive InGaAsSb material on a GaSb material substrate in a specific vertical architecture.
• European patent EP1642345B1 describes a matrix infrared image detector comprising a plurality of pixels.
• the planar absorption structure of each pixel according to the solution proposed by this patent is produced by a massive InGaAsSb material on a GaSb material substrate.
• the disadvantage of the solutions by these two documents is that the technological sector defining the process for manufacturing such a structure on GaSb substrates presents a complexity of execution and significant production costs resulting from the immaturity of said process.
• the invention provides several embodiments of a pixel structure comprising a specific superlattice structure for the absorption planar structure. More specifically, the invention proposes solutions compatible with the InP sector which has better technological maturity of the manufacturing process compared to other technological sectors such as GaSb.
• the invention details embodiments with examples of choice of materials for the superlattice, composition ranges of the semiconductor alloys forming the superlattice and dimensioning ranges of the thicknesses of the layers of the superlattice according to the invention.
• the periodically repeated elementary group in the superlattice according to the invention consists of at least three thin layers with the insertion of an additional layer with a small gap so as to obtain the following advantages compared to the solutions of the state art :
• the invention relates to an infrared radiation detection device comprising at least one pixel.
• a pixel comprises a first superlattice comprising a stack along a stacking direction of an elementary group of semiconductor layers.
• the semiconductor layers of said elementary group are each arranged according to a crystalline mesh structure.
• Said elementary group includes:
• ⁇ at least a second layer of a second semiconductor material having: o a second energy gap, o and a second conduction band minimum value strictly lower than the first conduction band minimum value;
• ⁇ a third layer of a third semiconductor material having: o a third energy gap lower than the first and the second energy gap; o and a third conduction band minimum value strictly less than the second conduction band minimum value.
• the elementary group is produced according to a first stacking configuration according to the following order: the second layer, the third layer, the second layer then the first layer or according to a second stacking configuration such that the third layer is confined between the first and second layer.
• the first semiconductor material also has a first valence band maximum value and the second semiconductor material also has a second valence band maximum value strictly less than the first valence band maximum value.
• the first superlattice is produced by epitaxy on a substrate made of a fourth semiconductor material arranged in a crystalline mesh structure. Said first superlattice is made such that, for each semiconductor layer of the first superlattice, the meshes of a semiconductor layer undergo internal mechanical stresses to adapt to the meshes of the crystalline structure of the substrate.
• the first, the second, the third and the fourth semiconductor material are of III-V type.
• the fourth semiconductor material is indium phosphide InP.
• the compositions of the materials used to produce the semiconductor layers of said elementary group are chosen such that the conduction and valence band diagram according to the stacking direction of the first super- grating has an effective energy gap, an effective valence band maximum value and a minimum value of effective conduction band. Said effective energy gap being between 400 meV and 750 meV.
• the effective mass of the carriers of positive charges in the superlattice according to the direction of the stacking is less than three times the mass of a free electron.
• the third semiconductor material is the InAs binary composite.
• the second semiconductor material is the ternary alloy In x Gai x As; with x the molar fraction of indium in the In x Gal- x As alloy.
• the molar fraction x of indium In in the second semiconductor material is less than 0.55.
• the first semiconductor material is the ternary alloy GaAs y Sbi- y ; with y the molar fraction of arsenic in the GaAs y Sbi- y alloy.
• the molar fraction y of arsenic As in the first semiconductor material is less than 0.55.
• the ratio between on the one hand the sum of the thicknesses of the layers of the elementary group weighted by the amplitude of the stresses undergone by each layer and on the other hand the total thickness of the group elementary is less than or equal to a predetermined value.
• the stresses undergone by the meshes of the layer of ln x Gai- x As are tensile stresses; and the stresses undergone by the meshes of the layer of GaAs y Sbi- y are compressive stresses.
• the amplitude of a stress undergone by the mesh cells of any layer of the elementary group is less than a limit dislocation stress.
• the thickness of a layer of the elementary group is between 0.3 nm and 10 nm.
• a pixel comprises along the stacking direction (Z) in this order:
• a bottom contact layer made of a fifth N+ doped semiconductor material having: a fifth valence band maximum value strictly lower than the effective valence band maximum value of the first superlattice; o and a fifth energy gap greater than or equal to the effective energy gap value of the first superlattice.
• An absorbent planar structure comprising at least the first superlattice.
• the layers of said first superlattice are N-doped.
• a pixel comprises along the stacking direction in this order:
• a lower contact made by a second N+ doped superlattice presenting: o a second effective valence band maximum value strictly less than the effective valence band maximum value of the first superlattice; o a second effective energy gap value greater than or equal to the effective energy gap value of the first superlattice.
• An absorbing planar structure comprising at least the superlattice.
• the layers of said superlattice are N-doped.
• the absorbent planar structure further comprises a transition layer made of a seventh N-doped semiconductor material having:
• ⁇ a seventh conduction band minimum value comprised between: o on the one hand the effective conduction band minimum value of the first superlattice; o and on the other hand the sixth conduction band minimum value or the third effective conduction band minimum value;
• a seventh valence band maximum value comprised between o on the one hand the effective valence band maximum value of the first superlattice; o and on the other hand the sixth valence band maximum value or the third effective valence band maximum value.
• transition layer is confined between the superlattice and the upper contact layer.
• Figure 1 a illustrates a perspective view of a first example of a pixel belonging to a matrix detector in the infrared frequency domain.
• Figure 1b illustrates a perspective view of a second example of a pixel belonging to a matrix detector in the infrared frequency domain.
• Figure 1 c illustrates a sectional view of an example according to the state of the art of an infrared detection pixel comprising a planar absorption structure formed by a superlattice.
• figure 1d illustrates a potential diagram along the pixel axis in the superlattice of figure 1c obtained by epitaxy in mesh agreement with the substrate.
• figure 1e illustrates a diagram of potential along the axis of the pixel in the superlattice of figure 1 c obtained by epitaxy with a stress compensated on a substrate.
• Figure 2a illustrates a sectional view of an infrared detector pixel comprising a superlattice according to a first embodiment of the invention.
• Figure 2b illustrates a potential diagram along the axis of the pixel in the superlattice according to the first embodiment of the invention.
• Figure 3a illustrates a sectional view of an infrared detector pixel comprising a superlattice according to a second embodiment of the invention.
• FIG. 3b illustrates a potential diagram along the axis of the pixel in the superlattice according to the second embodiment of the invention.
• FIG. 4 illustrates curves of the absorption simulation results for a two-layer superlattice and a superlattice according to the second embodiment of the invention for a cut-off wavelength equal to 2 ,3pm.
• FIG. 5a illustrates a sectional view of a first example of a pixel comprising an absorbing planar structure according to any one of the embodiments of the invention.
• figure 5b illustrates the band diagram along the axis of the pixel of figure 5a.
• FIG. 5c illustrates a sectional view of a second example of a pixel comprising an absorbing planar structure according to any one of the embodiments of the invention.
• figure 5d illustrates the band diagram along the axis of the pixel of figure 5c.
• FIG. 6 illustrates a sectional view of an infrared radiation detection device comprising a plurality of pixels according to the invention.
• a bulk material in the solid state is organized according to a crystalline structure obtained by the spatially periodic repetition of an elementary cell made up of the atoms of said material.
• all the mechanical, physical and electrical characteristics are determined, among other things, by the structure of the crystal lattice.
• the choice of the molar fractions of the different materials that make up the alloy defines the crystalline structure and the geometric parameters of the crystal lattice of the alloy obtained.
• the fabrication of the layers that form the superlattice is carried out via the epitaxy process on a substrate. It is possible to use molecular beam epitaxy or organometallic vapor phase epitaxy.
• the choice of the molar fractions used in the epitaxy step of each component of the alloy makes it possible to control the parameters of the crystal lattice of the deposited layer.
• a judicious choice of the molar fractions it is possible to carry out a deposition by epitaxy of a thin layer in mesh agreement with the crystalline structure of the substrate. We are talking here about a homo-epitaxy.
• FIGS. 1d and 1e serves to detail the limits of the use of a two-layer superlattice for operation at cut-off frequencies beyond 2.1 ⁇ m. Indeed, the realization of the planar absorption structure with a super lattice composed of two layers makes it possible to reach cut-off frequencies in the near infrared beyond 2.1 pm but with mediocre electro-optical performances.
• This type of structure presents a degradation of the quantum efficiency and a drop in the mobility of the positive charge carriers in the axis of the pixel. This degradation is due to a high effective mass of the holes. This increase in the effective mass is explained by a very high potential barrier observed by the holes in the superlattice along the pixel axis. All of these observations and results will be presented in the description of Figures 1c and 1d.
• Figure 1d illustrates a potential diagram along the z direction of the pixel axis in the SR0 superlattice of Figure 1c obtained by epitaxy in mesh agreement with the substrate.
• the thickness e1 of the layer C1 in GaAs y oSbi-yo is equal to 7 nm and the thickness e2 of the layer C2 in ln x oGai- x oAs is equal to 7 nm.
• the potential diagram presents the structure of the valence and conduction bands of the different layers of the superlattice along the z direction of the axis A and therefore by traversing the periodic stacking of the layers of the superlattice.
• the first layer C1 of the elementary group GO is produced with the ternary alloy GaAs y oSbi- y o having a first energy gap Eg1 , a first conduction band minimum value Ec1 and a first value of valence band maximum Ev1.
• the second layer C2 is made with the ternary alloy ln x0 Gai- x0 As having a second energy gap Eg2, a second conduction band minimum value Ec2 and a second valence band maximum value Ev2.
• the materials that make up the superlattice are chosen such that Ec1 >Ec2 and Ev1 >Ev2 to obtain a type 2 potential diagram. This is an alternation of potential barriers in the second layers C2 and potential wells in the first layers C1 seen by carriers of positive charges (holes). It is also an alternation of potential barriers in the first layers C1 and potential wells in the second layers C2 seen by carriers of negative charges (electrons).
• the quantum coupling between the different layers of the super-lattice generates the creation of an effective conduction band with an effective minimum energy level Ec e tf and an effective valence band with a level effective maximum energy Ev eff .
• the effective energy gap of the superlattice Eg eff Eceff - Ev eff f is equal to 0.488eV.
• the holes in the potential wells at the level of the first layer C1 see a high potential obtained by the combination of a large layer thickness (7 nm/7 nm) and a high potential difference between Ev e tf and Ev2 evaluated at 0.350 eV.
• the effect of the potential seen by the holes manifests itself in the increase in the effective mass of the heavy holes in the effective valence band which is quantified in this combination at 71 times the mass of a free electron denoted m 0 .
• This corresponds to a degradation of the optical efficiency by more than a factor of 10 compared to a planar absorption structure having acceptable electro-optical performances.
• an infrared detector exhibits acceptable electro-optical performances for effective hole mass values of less than 3 times the mass of a free electron m 0 .
• the two-layer SR0 superlattice in mesh agreement with a cut-off frequency of 2.1 pm has an effective hole mass equal to 9.8 times the mass of a free electron m 0 .
• the lattice-matched two-layer SR0 superlattice with a cut-off frequency of 2.3 pm has an effective hole mass equal to 52 times the mass of a free electron m 0 .
• the lattice-matched two-layer SRO superlattice with a cut-off frequency of 2.5 pm has an effective hole mass equal to 71.8 times the mass of a free electron m 0 .
• Figure 1 e illustrates a potential diagram along the z direction of the pixel axis in the SRO superlattice of Figure 1 c obtained by epitaxy with a compensated stress on a substrate.
• FIG. 1e shows the same structure of the SRO superlattice of FIG. 1c but with different molar fractions of the alloys making up the layers of the superlattice.
• This change in composition controlled by the proportioning of the components of the alloy during the growth phase by epitaxy generates a deposition of layers which are not in mesh agreement with the InP substrate. It has already been explained that this shift of the meshes generates internal mechanical stresses on the crystal meshes of the layers C1 and C2 to align with the crystal meshes of the SUB substrate, hence the obtaining of the new potential diagram described in the Figure 1d.
• the superlattice S’0 in this case is said to be mounted superlattice “with a compensated constraint”.
• the thickness e1 of the C1 layer in GaAs oSbiyo can be reduced to 2.9 nm and the thickness e2 of the C2 layer in ln X ' O Gai- X 'oAs can be reduced to 2.9nm.
• the meshes of layer C1 in GaAsyoSbiyo undergo compressive stresses; the meshes of the layer C2 in ln x oGai- x oAs undergo tensile stresses.
• the internal stresses applied to the meshes of the superlattice layers must not exceed a dislocation limit.
• the sum of the stresses undergone by the elementary group G'0 is null.
• the potential diagram of FIG. 1e shows the structure of the valence and conduction bands along the same axis A as that of FIG. 1d. It is a type 2 potential diagram as explained previously, presenting different values. Indeed, the internal stresses undergone by the meshes generate a quantum phenomenon known by the term “lifting of degeneracy”.
• the "lifting of the degeneracy" consists of a separation of the energy levels occupied by the heavy holes and the light holes.
• Ev1 -HH maximum energy level of valence band occupied by the heavy holes
• Ev1 -LH maximum energy level of valence band occupied by the light holes
• Ev1 -LH maximum energy level of valence band occupied by the light holes
• the energy gap increases (minimum of the conduction band increases and maximum of the valence band decreases). This makes it possible to reduce the energy overlap of the energy gap to 240 meV making it possible to reduce the thickness of the first layer C1 as well as the thickness of the second layer C2 to 2.9 nm.
• the quantum coupling between the different layers of the superlattice generates the creation of an effective conduction band with an effective minimum energy level Ec e tf and an effective valence band with a maximum energy level.
• the holes in the potential wells at C1 still see a high potential obtained by the combination of a large thickness of layers (2.9nm / 2.9nm) and a high potential difference between Ev eff and Ev2 evaluated at 0.520eV.
• the effect of the potential seen by the holes is manifested in the increase in the effective mass of heavy holes in the effective valence band which is quantified in this combination to 24 times the mass of a free electron.
• the two-layer SR'0 superlattice with a compensated strain and a cut-off frequency of 2.3 pm has an effective hole mass equal to 6 times the mass of a free electron m 0 .
• the two-layer SR'0 superlattice with a compensated strain and a cut-off frequency of 2.5 pm has an effective hole mass equal to 24 times the mass of a free electron m 0 .
• the invention proposes a new superlattice structure allowing to overcome the limitations of two-layer superlattice structures for cutoff frequencies between 2.1 pm and 2.5 pm with good quantum efficiency thanks to the reduction of the effective mass of the holes .
• FIG. 2a illustrates a sectional view of an infrared detector pixel comprising a superlattice according to a first embodiment of the invention.
• FIG. 2b illustrates a potential diagram along the z direction of the pixel axis in the superlattice according to the first embodiment of the invention obtained by epitaxy with a compensated stress on a SUB substrate.
• the pixel Pxl comprises a superlattice SR1 comprising a stack along the axis of the pixel A of an elementary group of semiconductor layers G1.
• the semiconductor layers of said elementary group G1 are made with a compensated strain.
• the periodically repeated elementary group G1 comprises in this order:
• a layer C'2 having the same composition as layer C2 but which may have a different thickness e'2.
• the first semiconductor material SC1 of the layer C1 has a first energy gap Eg1, a first valence band maximum value Ev1 and a first conduction band minimum value Ec1.
• the second semiconductor material SC2 of the layer C2 has a second energy gap Eg2, a second valence band maximum value Ev2 lower than the first valence band maximum value Ev1 and a second value of conduction band minimum Ec2 less than the first conduction band minimum value Ec1.
• the third semiconductor material SC3 of C3 has a third energy gap Eg3 strictly lower than the first and second energy gap Eg1 and Eg2 and a third conduction band minimum value Ec3 lower than the second value. conduction band minimum Ec2.
• the insertion of the third layer C3 in the superlattice with a semiconductor material SC3 with a reduced energy gap makes it possible to reduce the energy overlap of the gap REG.
• the reduction in the energy overlap of the gap REG gives the possibility of opting for a total thickness of the elementary group G1 that is smaller in the range of the targeted cut-off wavelengths. Reducing the thickness of the elementary group G1 makes it possible to lower the potential barrier seen by the holes confined in the potential wells and thus reduce their effective mass, increase the quantum efficiency and the mobility of the positive charge carriers.
• the first layer C1 is in compression
• the second layer C2 is in tension
• the third layer C3 is in compression.
• the superlattice SR1 it is possible to produce the superlattice SR1 according to the first embodiment via a stack of a plurality of thin layers of semiconductor materials, preferably of type III -V such as, by way of example, gallium arsenide, indium arsenide, gallium nitride, gallium antimonide, boron phosphide, as well as their ternary or quaternary or quinary alloys.
• FIG. 2b specifically describes the potential diagram obtained by the superlattice SR1 with the following dimensioning and composition characteristics.
• the target cut-off wavelength is 2.5 ⁇ m.
• the third layer C3 inserted between the two layers (C2, C'2) is made with indium arsenide InAs, a type III-V semiconductor binary composite with a reduced energy gap.
• the thickness of the third layer C3 denoted e3 is equal to 0.7 nm.
• the effect obtained consists in the reduction of the energy overlap of the gap REG and therefore the possibility of using thicknesses e1, e2 and e3 of the order of 1 nm for each layer.
• the gap energy overlap is effective and it corresponds to a combination of the gap energy overlaps of the different layers that make up the superlattice.
• the reduction of these two characteristics makes it possible to lower the potential barrier of the wells (layer C1) in the superlattice SR1 seen by the holes.
• the effective mass of the holes is reduced to 2.8 times the mass of a free electron for a cut-off wavelength of 2.5 pm.
• the superlattice SR1 according to the first embodiment with a cut-off frequency of 2.1 pm has an effective hole mass equal to 0.89 times the mass of a free electron m 0 (compared to 2.1 xm 0 for SR'O and 9.8xm 0 for ORS).
• the superlattice SR1 according to the first embodiment with a cut-off frequency of 2.3 pm has an effective hole mass equal to 1.2 times the mass of a free electron m 0 (compared to 6xm 0 for SR'O and 52xm 0 for ORS).
• the superlattice SR1 according to the first embodiment with a cut-off frequency of 2.5 pm has an effective hole mass equal to 2.8 times the mass of a free electron m 0 (compared to 24xm 0 for SR'O and 71.8xm 0 for ORS). More generally, the insertion of a thin layer in a material with a low energy gap in the elementary group of the superlattice between two C2 layers makes it possible to reduce the effective mass of the holes at the level of the potential wells. . The values obtained are quite close to those of bulk materials and make it possible to obtain a good internal quantum efficiency for wavelengths between 2.1 pm and 2.5 pm at non-cryogenic temperatures.
• FIG. 3a illustrates a sectional view of an infrared detector pixel comprising a superlattice according to a second embodiment of the invention.
• FIG. 3b illustrates a potential diagram along the z direction of the pixel axis in the superlattice according to the second embodiment of the invention obtained by epitaxy with a compensated stress on a SUB substrate.
• the pixel Px1 comprises a superlattice SR2 comprising a stack along the axis of the pixel A of an elementary group of semiconductor layers G2.
• the semiconductor layers of said elementary group G2 are made with a compensated stress.
• the periodically repeated elementary group G2 comprises in this order:
• the first layer C1 is in compression
• the second layer C2 is in tension
• the third layer C3 is in compression.
• the superlattice SR2 it is possible to produce the superlattice SR2 according to the first embodiment via a stack of a plurality of thin layers of semiconductor materials, preferably of type III -V such as, by way of example, gallium arsenide, indium arsenide, gallium nitride, gallium antimonide, boron phosphide, as well as their ternary or quaternary or quinary alloys.
• Figure 3b specifically describes the potential diagram obtained by the superlattice SR2 with the following sizing and composition characteristics:
• the target cut-off wavelength is 2.5 ⁇ m.
• the third layer C3 inserted between the layers C2 and C2 is made with indium arsenide InAs a binary composite semiconductor type III-V with reduced gap energy.
• the thickness of the third layer C3 denoted e3 is equal to 0.7 nm.
• the effect obtained consists in the reduction of the gap energy overlap and therefore the possibility of using thicknesses e1, e2 and e3 of the order of 1 nm for each layer.
• the gap energy overlap is effective and it corresponds to a combination of the gap energy overlaps of the different layers that make up the superlattice.
• the reduction of these two characteristics makes it possible to lower the potential barrier of the wells (layer C1) in the superlattice SR1 seen by the holes.
• the effective mass of the holes is reduced to 2.8 times the mass of a free electron for a cut-off wavelength of 2.5 pm.
• the insertion of a thin layer of a material with a low energy gap in the elementary group of the superlattice makes it possible to reduce the effective mass of the holes at the level of the potential wells.
• the values obtained are quite close to those of bulk materials and make it possible to obtain a good internal quantum efficiency for wavelengths between 2.1 pm and 2.5 pm at non-cryogenic temperatures.
• the thickness of the i th layer Ci of the elementary group G2 With e, the thickness of the i th layer Ci of the elementary group G2, and the stress undergone by the meshes of the i th layer Ci of the elementary group G2.
• the compositions of the materials used to produce the semiconductor layers of the elementary groups G1 are chosen such that the conduction and valence band diagram according to the stacking direction of the superlattice SR1 (or SR2) has an effective energy gap Eg e ff between 400 meV and 750 meV to obtain a detector device having a cut-off frequency (A c ) chosen between 1.6 pm and 3 .1 p.m.
• FIG. 4 illustrates curves of the absorption simulation results for a superlattice according to the state of the art and a superlattice according to the second embodiment of the invention for a length of cutoff wave at 2.3pm.
• FIG. 5a illustrates a sectional view of a first example of a pixel Px1 comprising an absorbing planar structure according to the invention.
• Figure 5b illustrates a band diagram diagram along the axis of pixel Pxl of Figure 5a.
• the pixel Pxl comprises along the stacking direction Z (or the axis of the pixel) in this order: the substrate SUB having the characteristics detailed previously, a lower contact layer CONTJNF in a fifth semiconductor material SC5 doped N+, an absorbing planar structure SPA according to the invention with layers C1, C2 and C3 doped N and an upper contact layer CONT_SUP in a sixth P-doped semiconductor material SC6 having:
• the fifth semiconductor material SC5 has a fifth valence band maximum value Ev5 strictly lower than the effective valence band maximum value Ev e tf of the superlattice SR1 (or SR2) according to the invention such that shown in Figure 5b.
• the fifth semiconductor material SC5 also has an energy gap Eg5 greater than or equal to the effective energy gap value Eg eff of the superlattice SR1 (or SR2) according to the invention as illustrated in Figure 5b.
• the lower contact CONTJNF with an SRJNF superlattice with a stack of N+ doped layers.
• the superlattice used for the lower contact CONTJNF has an effective valence band maximum value Ev e ffjnf strictly lower than the effective valence band maximum value Ev eff of the superlattice SR1 (or SR2) according to the invention.
• the superlattice used for the lower contact CONTJNF also has an effective energy gap Eg e ffjnf greater than or equal to the effective energy gap value Eg eff of the superlattice SR1 (or SR2) according to the invention such that shown in Figure 5b.
• the sixth semiconductor material SC6 used to make the upper contact CONT_SUP has a sixth valence band maximum value Ev6 strictly lower than the effective valence band maximum value Ev e tf of the superlattice SR1 (or SR2 ) according to the invention as illustrated in FIG. 5b.
• the sixth semiconductor material SC6 also has a sixth conduction band minimum value Ec6 strictly greater than the effective conduction band minimum value Ec e tf of the superlattice SR1 (or SR2) according to the invention. as shown in Figure 5b.
• the upper contact CONT_SUP with a superlattice SR_SUP with a stack of P-doped layers.
• the superlattice used for the upper contact CONT_SUP has an effective valence band maximum value Ev ef f_ sup strictly less than the effective valence band maximum value Ev eff of the superlattice SR1 (or SR2) according to the invention.
• the super-network used for the upper contact CONT_SUP also has a conduction band minimum value Ec e ff_ SU p strictly greater than the effective conduction band minimum value Ec e tf of the super-network SR1 (or SR2) according to l invention as shown in Figure 5b.
• FIG. 5b illustrates a sectional view of a second example of a pixel Pxl comprising an absorbing planar structure according to the invention.
• Figure 5d illustrates a band diagram diagram along the axis of the pixel Pxl of Figure 5b.
• the pixel Pxl of FIG. 5c takes up the same characteristics of the pixel described previously, illustrated by FIG. 5a.
• the stacking of the pixel Pxl of figure 5c is distinguished by the insertion of an additional structure denoted transition structure C_trans confined between the planar absorption structure and the upper contact CONT_SUP as illustrated in figure 5d.
• the transition structure C_trans is made of a seventh N-doped semiconductor material SC7 having a seventh band minimum value of conduction Ec7 between, on the one hand, the effective conduction band minimum value Ec e tf of the first superlattice according to the invention SR1 (or SR2) and, on the other hand, the sixth conduction band minimum value Ec6 such that shown in Figure 5d.
• the seventh conduction band minimum value Ec7 is between on the one hand the band minimum value of effective conduction Ec e tf of the first super-network according to the invention SR1 (or SR2) and on the other hand the minimum effective conduction band value Ec e ff_ SU p of the super-network of the upper contact CONT_SUP as illustrated on the Figure 5d.
• the seventh P-doped semiconductor material SC7 also has a seventh valence band maximum value Ev7 comprised between on the one hand the effective valence band maximum value Ev e tf of the first superlattice SR1 (or SR2) according to the invention and on the other hand the sixth valence band maximum value Ev6 as illustrated in FIG. 5d.
• the seventh valence band maximum value Ev7 is between on the one hand the band maximum value effective valence band Ev eff of the first superlattice according to the invention SR1 (or SR2) and on the other hand the maximum effective valence band value Ev e ff_ SU p of the superlattice of the upper contact CONT_SUP.
• the C_TRAN transition structure with a layer of solid semiconductor material such as the ternary alloy ln 0.53Ga 0.47As doped N- with a thickness between 1 ⁇ m and 3 ⁇ m deposited on the superlattice according to the invention having an overall thickness of between 1 ⁇ m and 3 ⁇ m.
• a layer of solid semiconductor material such as the ternary alloy ln 0.53Ga 0.47As doped N- with a thickness between 1 ⁇ m and 3 ⁇ m deposited on the superlattice according to the invention having an overall thickness of between 1 ⁇ m and 3 ⁇ m.
• Figure 6 illustrates a sectional view of a device D1 for detecting infrared radiation comprising a plurality of pixels Pxl according to the invention.
• the device a device D1 for detecting infrared radiation is mounted on the substrate SUB. It is a hybrid optoelectronic system, comprising: an OPT optical part based on a matrix formed by a plurality of pixels arranged in rows and columns and an electronic part consisting of an integrated read circuit ROIC on a semiconductor substrate making it possible to individually read the signal of each pixel of the optical part OPT.
• a pixel belonging to the optoelectronic system can contain a single photosensitive element or a plurality of photosensitive elements connected together.
• optical part OPT with a single pixel Pxl.
• the ROIC read integrated circuit is produced by means of a plurality of transistors and thin layers of conductive, semi-conductive or dielectric material according to CMOS (Complementary Metal-Oxide-Semiconductor) technology on a silicon substrate.
• CMOS Complementary Metal-Oxide-Semiconductor
• a buried electrode is associated to read the signals generated by the photo charge carriers generated by the photo detector structure of a pixel Pxl.
• the invention described proposes a new superlattice structure to produce the absorbing planar structure of a detection pixel in the short infrared range.
• the superlattice structure according to the invention makes it possible to reach the target cut-off wavelengths beyond 2.1 pm while reducing the effective mass of the positive charge carriers (holes) which improves the quantum efficiency of the detector compared to the solutions of the state of the art on InP..
• the manufacturing process and the choices of materials of the superlattice according to the invention are compatible with technological sectors of mature manufacturing process such as the technological sector based on In P substrates.

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