Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/201—Filters in the form of arrays
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
  • G02B2207/123—Optical louvre elements, e.g. for directional light blocking
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B3/00—Simple or compound lenses
  • G02B3/0006—Arrays

Definitions

• TITLE Optical angular filter
• This description relates to an angular optical filter.
• the present description relates to an angular filter intended to be used within an optical system, for example, an imaging system or to be used to collimate the rays of a light source, in particular for a organic light-emitting diode (OLED) directional lighting application or optical inspection.
• an optical system for example, an imaging system or to be used to collimate the rays of a light source, in particular for a organic light-emitting diode (OLED) directional lighting application or optical inspection.
• OLED organic light-emitting diode
• An angular filter is a device making it possible to filter incident radiation as a function of the incidence of this radiation and thus block the rays whose incidence is greater than a maximum incidence.
• Angle filters are frequently used in conjunction with image sensors.
• One embodiment overcomes all or part of the drawbacks of known angular filters.
• One embodiment provides an angular filter for an image acquisition device comprising a stack comprising: a first matrix of first openings delimited by first walls opaque to visible and/or infrared radiation; an array of microlenses; and a second matrix of second openings delimited by second walls opaque to visible and/or infrared radiation.
• the number of second openings is at least twice as high as the number of first openings.
• the number of first openings is at least twice as high as the number of second openings
• the network of microlenses is located between the first matrix and the second matrix.
• the second matrix is located between the array of microlenses and the first matrix.
• the first matrix is located between the array of microlenses and the second matrix.
• the structure comprising the network of microlenses and the first matrix is adapted to block incident rays having an incidence, with respect to the optical axes of the microlenses, greater than a first maximum incidence
• the second matrix is adapted to block incident rays having an incidence, with respect to the optical axes of the microlenses, greater than a second maximum incidence, the second maximum incidence being greater than the first maximum incidence
• the first maximum incidence which corresponds to the half-width at half the maximum transmittance is less than 10°, preferably less than 4°.
• the second maximum incidence which corresponds to the half-width at half the maximum transmittance is greater than 15° and less than 60°.
• the second maximum incidence is less than or equal to 30°.
• the first openings are filled with air, with a partial vacuum or with a material that is at least partially transparent in the visible and infrared domains.
• the second openings are filled with air, with a partial vacuum or with a material that is at least partially transparent in the visible and infrared domains.
• a single microlens is directly above a first opening.
• each microlens is directly above a single first opening.
• the optical axis of each microlens is aligned with the center of a first aperture.
• One embodiment provides an image acquisition device comprising an angular filter as described above and an image sensor.
• Figure 1 illustrates, in a sectional view, partial and schematic, an embodiment of an image acquisition system
• Figure 2 illustrates, in a sectional view, partial and schematic, an embodiment of an image acquisition device comprising an angular filter
• Figure 3 illustrates, in a sectional view, partial and schematic, another embodiment of an image acquisition device
• Figure 4 illustrates, in a sectional view, partial and schematic, another embodiment of an image acquisition device
• FIG. 5 represents, by a graph, the transmittance of the angular filter of the device illustrated in FIG. 2 as a function of the incidence of the rays reaching the angular filter.
• the expression “it comprises only the elements” means that it comprises, at least 90% of the elements, preferably that it comprises at least 95% of the elements.
• a layer or a film is said to be opaque to radiation when the transmittance of the radiation through the layer or the film is less than 10%.
• a layer or a film is said to be transparent to radiation when the transmittance of the radiation through the layer or film is greater than 10%.
• all the elements of the optical system which are opaque to radiation have a transmittance which is less than half, preferably less than a fifth, more preferably less than a tenth, of the transmittance the weakest of the elements of the optical system transparent to said radiation.
• the term "useful radiation” is used to refer to the electromagnetic radiation passing through the optical system in operation.
• the term "optical element of micrometric size" refers to an optical element formed on one face of a support whose maximum dimension, measured parallel to said face, is greater than 1 ⁇ m and less than 1 mm.
• each micrometric-sized optical element corresponds to a micrometric-sized lens, or microlens, composed two diopters.
• each optical element of micrometric size being able to correspond, for example, to a Fresnel lens of micrometric size, to a micron-sized gradient index lens or to a micron-sized diffraction grating.
• visible light is electromagnetic radiation whose wavelength is between 400 nm and 700 nm
• red light is electromagnetic radiation whose wavelength is between 600 nm and 700 nm
• Infrared radiation is radiation electromagnetic wave whose wavelength is between 700 nm and 1 mm.
• near infrared radiation the wavelength of which is between 700 nm and 1.7 ⁇ m.
• Figure 1 illustrates, by a sectional view, partial and schematic, an embodiment of an image acquisition system 11.
• the image acquisition system 11, illustrated in FIG. 1, comprises: an image acquisition device 13 (DEVICE); and a processing unit 15 (Processing Unit - PU).
• DEVICE image acquisition device 13
• processing unit 15 Processing Unit - PU
• the processing unit 15 preferably comprises signal processing means provided by the device 11, not shown in Figure 1.
• the processing unit 15 comprises, for example, a microprocessor.
• the device 13 and the processing unit 15 are preferably connected by a connection 17.
• the device 13 and the processing unit 15 are, for example, integrated in the same circuit.
• Figure 2 illustrates, in a sectional view, partial and schematic, an embodiment of an image acquisition device 19 comprising an angular filter.
• the image acquisition device 19 shown in Figure 2 comprises, from bottom to top in the orientation of the figure: an image sensor 21; and an angular filter 23, covering the image sensor 21.
• the embodiments of the devices of FIGS. 2 to 4 are represented in space according to a direct orthogonal XYZ coordinate system, the Y axis of the XYZ mark being orthogonal to the upper face of the image sensor 21.
• the image sensor 21 comprises an array of photon sensors 25, also called photodetectors.
• the photodetectors 25 are preferably arranged in matrix form.
• the photodetectors 25 may be covered with a protective coating and/or a color filter (not shown).
• the photodetectors 25 preferably all have the same structure and the same properties/characteristics. In other words, all the photodetectors 25 are substantially identical except for manufacturing differences.
• the image sensor 21 further comprises conductive tracks and switching elements, in particular transistors, not shown, allowing the selection of the photodetectors 25.
• the photodetectors 25 are preferably made of organic materials.
• the photodetectors 25 may correspond to organic photodiodes (OPD, Organic Photodiode), to organic photoresistors, to amorphous or monocrystalline silicon photodiodes integrated on a thin-film transistor substrate (TFT, Thin Film Transistor) or a transistor substrate.
• OPD Organic Photodiode
• TFT Thin Film Transistor
• MOS Metal Oxide Semiconductor
• the organic photodiodes 25 of the image sensor 21 comprise, for example, a mixture of poly(3,4-ethylenedioxythiophene) (PEDOT) and sodium poly(styrene sulfonate) (PSS).
• the substrate is for example made of silicon, preferably of monocrystalline silicon.
• the channel, source and drain regions of the TFT transistors are for example made of amorphous silicon (a-Si or amorphous Silicon), of indium, gallium, zinc and oxide (IGZO Indium Gallium Zinc Oxide) or of low temperature polycrystalline silicon (LTPS or Low Temperature Polycrystalline Silicon).
• each photodetector 25 is adapted to detect visible radiation and/or infrared radiation.
• the angular filter 23 comprises: an array 27 of microlenses 29 of micrometric size, for example plano-convex; a first matrix 31 or layer of first holes or openings 33 delimited by first walls 35 that are opaque in the visible and/or infrared domains; and a second matrix 41 of second holes 43 or openings delimited by second walls 45, the network 27 of microlenses 29 being located between the first matrix 31 and the second matrix 41.
• the array 27 of microlenses 29 is formed on and in contact with a substrate or support 28, the substrate 28 then being interposed between the microlenses 29 and the first matrix 31.
• the substrate 28, when present, can be made of a transparent polymer which does not absorb, at least, the wavelengths considered, here in the visible and infrared range.
• This polymer may in particular be poly(ethylene terephthalate) PET, poly(methyl methacrylate) PMMA, inecyclic olefin polymer (COP), polyimide (PI), polycarbonate (PC).
• the thickness of substrate 28 can vary between 1 ⁇ m and 100 ⁇ m, preferably between 10 ⁇ m and 100 ⁇ m.
• the substrate 28 can correspond to a colored filter, to a polarizer, to a half-wave plate or to a quarter-wave plate.
• the microlenses 29 can be made of silica, of PMMA, of a positive photosensitive resin, of PET, of poly(ethylene naphthalate) (PEN), of COP, of polydimethylsiloxane (PDMS)/silicone, epoxy resin or acrylate resin.
• the microlenses 29 can be formed by creeping blocks of a photosensitive resin.
• the microlenses 29 can additionally be formed by molding on a layer of PET, PEN, COP, PDMS/silicone, epoxy resin or acrylate resin.
• the microlenses 29 are convergent microlenses each having a focal distance f of between 1 ⁇ m and 100 ⁇ m, preferably between 1 ⁇ m and 70 ⁇ m. According to one embodiment, all the microlenses 29 are substantially identical.
• the microlenses 29 and the substrate 28, when present, are preferably made of transparent or partially transparent materials, that is to say transparent in part of the spectrum considered for the targeted field, for example, imaging, over the range of wavelengths corresponding to the wavelengths used during the exposure of an object to be imaged.
• the flat faces of the microlenses 29 face the first openings 33.
• the thickness of the first walls 35 is called "hl".
• the walls 35 are, for example, opaque to the radiation detected by the photodetectors 25, for example absorbing and/or reflecting with respect to the radiation detected by the photodetectors 25.
• the walls 35 absorb or reflect in the visible and/or the near infrared and/or the infrared.
• the walls 35 are, for example, opaque at wavelengths comprised between 450 nm and 570 nm, used for imaging (for example biometrics and fingerprint imaging) and/or opaque at wavelengths red and 1 infrared.
• the upper face of the layer 31 is the face of the layer 31 located at the interface between the layer 31 and the substrate 28 (or if necessary the array of microlenses 29). Also referred to as the lower face of the layer 31 is the face of the layer 31 located opposite the upper face.
• each opening 33 can be square, rectangular or funnel-shaped.
• Each opening 33 seen from above (that is to say in the XZ plane), can have a circular, oval or polygonal shape, for example triangular, square, rectangular or trapezoidal.
• Each opening 33 viewed from above, has a preferably circular shape.
• the width of an opening 33 is defined as the characteristic dimension of the opening 33 in the plane XZ. For example, for an opening 33 having a square section in the XZ plane, the width corresponds to the dimension of one side and for an opening 33 having a circular section in the XZ plane, the width corresponds to the diameter of the opening 33.
• the width of the openings 33, at the level of the upper face of the layer 31, is greater than the width of the openings 33, at the level of the lower face of the layer 31.
• the center of an opening 33 is called the point situated at the intersection of the axis of symmetry of the openings 33 and of the lower face of the layer 31.
• the center of each opening 33 is located on the axis of revolution of the opening 33.
• the first openings 33 are arranged in rows and in columns.
• the rows, the columns, can be staggered, that is to say that two successive rows, two successive columns, are misaligned.
• the openings 33 can all have substantially the same dimensions.
• "PI” is the repetition pitch of the openings 33, that is to say the distance, along the X axis or the Z axis, between the centers of two successive openings 33 of a row or a column.
• Each first aperture 33 is preferably associated with a single microlens 29 of the first matrix 31.
• the optical axes of the microlenses 29 are preferably aligned with the centers of the apertures 33 of the first matrix 31.
• the diameter of the microlenses 29 is preferably greater than the maximum section (measured perpendicular to the optical axes) of the openings 33.
• the pitch PI can be between 4 ⁇ m and 50 ⁇ m, for example equal to approximately 15 ⁇ m.
• the height hl can be between 1 ⁇ m and 1 mm, preferably be between 1 ⁇ m and 20 ⁇ m.
• the width wl can preferably be between 1 ⁇ m and 50 ⁇ m, for example be equal to around 10 ⁇ m.
• each photodetector 25 is associated with four openings 33 (it is for example associated with two openings 33 along the axis
• the resolution of the angular filter 23 can be more than four times higher than the resolution of the image sensor 21. In other words, in practice, there can be more than four times more first openings 33 than photodetectors 25.
• the structure 29 and the first matrix 31 is adapted to filter the incident radiation as a function of the incidence of the radiation relative to the optical axes of the microlenses 29 of the array 27.
• the structure is adapted to filter the incident rays, arriving on the microlenses, according to their incidences.
• the structure associating the network 27 of microlenses 29 and the first matrix 31 is adapted to block the rays of the incident radiation whose respective incidences relative to the optical axes of the microlenses 29 of the filter 23 are greater than a first maximum incidence.
• This structure is adapted to allow only rays to pass whose incidence relative to the optical axes of the microlenses 29 is less than the first maximum incidence.
• the structure only lets through incident rays having an incidence of less than 45°, preferably less than 30°, more preferably less than 10°, even more preferably less than 4°, for example of the order of 3 .5° .
• the first openings 33 are, for example, filled with air, with a partial vacuum or with a material that is at least partially transparent in the visible and infrared domains.
• the filling material of the openings 33 optionally forms a layer 37 on the lower face of the first matrix 31 so as to cover the first walls 35 and planarize said lower face of the first matrix 31.
• the microlenses 29 are preferably covered by a layer 39 of planarization.
• Layer 39 is made of a material that is at least partially transparent in the visible and infrared domains, it can then play the role of a color filter.
• the second matrix is located above the network 27 of microlenses 29. More precisely, the second matrix is located on the upper face of the layer 39.
• the thickness of the second walls 45 is called "h2".
• the second walls 45 are, for example, of the same nature and of the same opacity as the first walls 35.
• each opening 33 can have a square, triangular, trapezoidal shape or have the shape of a funnel.
• Each opening 43, seen from above (XZ plane), can have a circular, oval or polygonal shape, for example triangular, square, rectangular or trapezoidal.
• Each opening 43, viewed from above, has a preferably circular shape.
• the second openings 43 are arranged in rows and in columns.
• the openings can be staggered.
• the openings 43 can all have substantially the same dimensions (except for manufacturing variations).
• the width or diameter of the openings 43 is called "w2" (measured at the base of the openings, that is to say at the interface with the layer 39).
• the openings 43 are arranged regularly along the rows and along the columns. “P2” is the repetition pitch of the openings 43, that is to say the distance in top view between the centers of two successive openings 43 of a row or of a column.
• the pitch P2 is less than the pitch PI and the width w2 is less than width wl .
• An advantage of providing a pitch P2 less than the pitch PI, and therefore a number of openings 43 greater than the number of openings 41, is that this makes it possible not to have any impact on the quality of the image formed on the sensor (derived from Nyquist theory) .
• the matrix 41 does not will not be imaged on the sensor through the array 31. This is particularly true when the pitch P2 of the array 41 is at least twice and preferably at least 4 times less than the pitch P1 of the array 31.
• An alternative solution would be to perfectly align the 2 matrices but this can be relatively complex to implement. Providing a difference in pitch, preferably by a factor at least equal to 2, makes it possible not to have to make this alignment.
• the pitch PI is less than the pitch P2 and the width wl is less than the width w2.
• the pitch P2 can be between 4 ⁇ m and 50 ⁇ m, for example equal to around 6 ⁇ m.
• the height h2 can be between 1 ⁇ m and 100 mm, preferably be between 1 ⁇ m and 50 ⁇ m.
• the width w2 can preferably be between 1 ⁇ m and 45 ⁇ m, for example be equal to around 4 ⁇ m.
• the second openings 43 are, for example, filled with air, a partial vacuum or a material at least partially transparent in the visible and infrared domains, for example a material used as a filter. color .
• the second matrix 41 is adapted to filter the incident radiation as a function of the incidence of the radiation with respect to the Y axis.
• the second matrix 41 is adapted to only let through rays having an incidence less than a second maximum incidence, strictly greater than the first maximum incidence.
• the second matrix 41 is adapted to allow only rays to pass, arriving on the matrix 41, having an incidence less than the second maximum incidence.
• the second maximum incidence is preferably greater than 15°.
• the second maximum incidence is preferably less than 60°, preferably less than or equal to 30°.
• the second matrix 41 is adapted to block the incident rays whose respective incidences, with respect to the Y axis, are greater than the second maximum incidence.
• the structure comprising the network 27 of microlenses 29 and the first matrix 31 of openings 33 theoretically makes it possible to block all the rays whose incidence is greater than the first maximum incidence.
• certain rays of incidence greater than the first maximum incidence nevertheless manage to cross the first matrix 31.
• This phenomenon is called optical crosstalk or parasitic coupling and can lead to a drop in resolution of the photodetectors 25.
• the purpose of the second matrix 41 is to block the rays of incidences greater than the second maximum incidence and which could lead to optical crosstalk.
• each ray arrives with the same incidence on the upper face of the matrix 41 and on the microlenses 29.
• the radiation incident on the device 19 comprises: rays 47 of zero incidence (perpendicular to the planar faces of the microlenses 29); rays 49 of incidence a strictly greater than 0° and less than or equal to the first maximum incidence, for example approximately 4°; rays 51 of incidence p strictly greater than the first maximum incidence and less than or equal to the second maximum incidence, for example approximately 20°; and rays 53 of incidence y strictly greater than the second maximum incidence.
• Some of the rays incident on the device 19 are nevertheless blocked by the walls even though they have an incidence lower than the second maximum incidence. These are the rays which arrive on the upper faces of the walls 45 or on the side walls of the walls 45. The proportion of rays of incidence lower than the second maximum incidence and nevertheless blocked depends on the respective incidence of the rays. These rays of Angles of attack lower than the second maximum angle of attack and nevertheless blocked are not represented in figure 2.
• Each ray 47 passes through the second matrix 41 and the array 27 of microlenses 29 emerging from the microlens 29 which it passes through so as to pass through the image focus of said microlens 29.
• the image focus of each microlens 29 is located on or near the lower face of the first array 31 of first apertures 33, at the center of the aperture 33 with which the microlens 29 is associated.
• the structure associating the network 27 of microlenses 29 and the first matrix 31 does not block the rays 47.
• Each ray 47 is therefore picked up by the image sensor 21 and more precisely by the photodetector 25 underlying the microlens 29 through which the ray 47 passes.
• the rays 49 are similar to the rays 47, in their paths throughout the angular filter 23. Neither the second matrix 41 nor the structure associating the array 27 of microlenses 29 and the first matrix 31 block the rays 49. Each ray 49 is therefore picked up by the image sensor 21 and more precisely by the photodetector 25 underlying the microlens 29 through which said ray passes.
• Each spoke 51 crosses the second matrix 41 so as to reach the microlenses 29.
• the spokes 51 are however blocked by the structure associating the array 27 of microlenses 29 and the first matrix 31, unlike the spokes 49 or 47. The spokes 51 therefore do not reach the photodetectors 25.
• the rays 53 having incidences greater than the second maximum incidence are completely blocked by the second matrix 41.
• the rays 53 therefore do not reach the microlenses 29 and the photodetectors 25.
• the image sensor 21 At the output of the angular filter 23, the image sensor 21 only picks up the rays 47 and 49, having incidences lower than the first maximum incidence.
• Figure 3 illustrates, by a sectional view, partial and schematic, another embodiment of an image acquisition device 55.
• FIG. 3 illustrates an image acquisition device 55 similar to device 19 illustrated in FIG. 2, except that second matrix 41 is located between array 27 of microlenses 29 and first matrix 31 .
• the second matrix 41 is located between the array 27 of microlenses 29 and the substrate 28, however in practice, the second matrix 41 can be located between the substrate 28 and the first matrix 31.
• the incident rays first reach the microlenses 29 and are deflected by them.
• the deflected rays are then filtered, by the second matrix 41 then by the first matrix 31.
• each ray 47, 49, 51 and 53 refracted by a microlens 29 is deflected by an angle so as to form an angle 5, a', p', y' with the optical axis of the microlens 29.
• Figure 4 illustrates, by a sectional view, partial and schematic, another embodiment of an image acquisition device 57.
• FIG. 4 illustrates an image acquisition device 57 similar to the device 55 illustrated in FIG. 3, except that the second matrix 41 is located between the first matrix 31 and the image sensor 21 .
• the incident rays first reach the microlenses 29 and are deflected by them.
• the deflected rays are then filtered, by the first matrix 31 then by the second matrix 41.
• each ray 47, 49, 51 and 53 refracted by a microlens 29 is deflected by an angle so as to form an angle 5, a', p', y' with the axis microlens optics 29.
• FIG. 5 represents, by a graph, the transmittance of the angular filter of the device illustrated in FIG. 2 as a function of the incidence of the rays reaching the angular filter.
• FIG. 5 illustrates three curves 59, 61 and 63 each representing the normalized transmittance (Transmission) of the rays in different parts of the angular filter 23 illustrated in FIG. 2, as a function of the incidence of said rays (Angles (°) ) .
• the graph illustrated in FIG. 5 comprises: a curve 59 corresponding to the transmittance of the rays passing through the structure associating the array 27 of microlenses 29 and the first matrix 31; a curve 61 corresponding to the transmittance of the rays passing through the second matrix 41; and a curve 63 corresponding to the transmittance of the rays passing through the whole of the angular filter 23 as illustrated in FIG. 2.
• each of the curves 59, 61 and 63 was obtained by a simulation in which: the focal length of the microlenses 29 is between 10 ⁇ m and 70 ⁇ m; the microlenses 29 are positioned on and in contact with a substrate 28 with a thickness of between 10 ⁇ m and 60 ⁇ m; the first openings 33 are trapezoidal in shape; the openings 33 have a width wl at the upper face of the matrix 31 of between 1 ⁇ m and 45 ⁇ m, a width at the level of the lower face of the matrix 31 of between 1 ⁇ m and 40 ⁇ m, a height hl of between 1% m and 50 ⁇ m, and a pitch PI of the order of 5 ⁇ m; the openings 43 are rectangular in shape; and the openings 43 have a width w2 of between 1 ⁇ m and 45 ⁇ m, a height h2 of between 1 ⁇ m and 50 ⁇ m and a pitch P2 of between 4 ⁇ m and 59 ⁇ m.
• the combination of the network of microlenses and the first matrix, respectively the second matrix does not make it possible to block clearly the rays whose incidence is greater than the first maximum incidence, respectively the second incidence. maximum.
• blocking value that is to say the first maximum incidence, respectively the second maximum incidence, as being the half-width at half the maximum transmittance of the grating 27 and of the matrix 31, respectively the matrix 41 or half-width at half-height of curve 59, respectively curve 61.
• the rays whose incidence is equal to this value are blocked at 50%, the rays whose incidence is greater than this value are mostly unblocked and rays whose incidence is less than this value are mostly blocked by the association of the network of microlenses and the first matrix 31, respectively by the second matrix 41.
• the half-width at half-height of the curve 59 or half-width at half the maximum transmittance of the first matrix (HWHM: Half Width High Maximum) is equal to approximately 3, 5° and the half-width at half-height of the curve 61 or half-width at half the maximum transmittance of the second matrix is equal to approximately 20°.
• the first curve 59 comprises two second peaks, called secondary peaks, for incidences of about 25° and -25°.
• the transmittance of rays having an incidence equal to approximately 25° is approximately equal to 0.05.
• These secondary peaks correspond to the passage, through the network of microlenses 29 or the first matrix 31, of rays having incidences of between about 20° and about 40°, picked up by a photodetector 25 close to the photodetector 25 underlying the microlens 29 or the aperture 33 through which the ray passes.
• the second curve 61 is characteristic of a band pass filter allowing the rays whose incidences are between 20° and -20° to pass.
• the values of curve 63 correspond to a multiplication of the value of curve 59 and the value of curve 61 for the same given incidence.
• the third curve 63 has, in comparison to curve 59, no secondary peaks.
• the transmittance of the rays beyond 20° then tends towards 0.

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• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Optical Elements Other Than Lenses (AREA)
• Transforming Light Signals Into Electric Signals (AREA)
• Photometry And Measurement Of Optical Pulse Characteristics (AREA)
• Studio Devices (AREA)
• Optical Filters (AREA)
• Electroluminescent Light Sources (AREA)

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• 2020
  • 2020-12-14 FR FR2013150A patent/FR3117611B1/fr active Active
• 2021
  • 2021-11-22 EP EP21815505.9A patent/EP4260103A1/de active Pending
  • 2021-11-22 JP JP2023536171A patent/JP2023553659A/ja active Pending
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