EP4231612B1 - Elektronische vorrichtung mit millimeterwellenantennenmodul - Google Patents

Elektronische vorrichtung mit millimeterwellenantennenmodul

Info

Publication number
EP4231612B1
EP4231612B1 EP22871741.9A EP22871741A EP4231612B1 EP 4231612 B1 EP4231612 B1 EP 4231612B1 EP 22871741 A EP22871741 A EP 22871741A EP 4231612 B1 EP4231612 B1 EP 4231612B1
Authority
EP
European Patent Office
Prior art keywords
back cover
circuit board
disposed
millimeter wave
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP22871741.9A
Other languages
English (en)
French (fr)
Other versions
EP4231612A1 (de
EP4231612A4 (de
Inventor
Yu Wang
Zengchao QU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honor Device Co Ltd
Original Assignee
Honor Device Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honor Device Co Ltd filed Critical Honor Device Co Ltd
Publication of EP4231612A1 publication Critical patent/EP4231612A1/de
Publication of EP4231612A4 publication Critical patent/EP4231612A4/de
Application granted granted Critical
Publication of EP4231612B1 publication Critical patent/EP4231612B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
    • H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/08—Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along or adjacent to a rectilinear path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/32—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by mechanical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
    • H01Q3/46—Active lenses or reflecting arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components

Definitions

  • This application relates to the field of communication technologies, and in particular, to an electronic device with a millimeter wave antenna module.
  • an antenna As a component of transmitting and receiving an electromagnetic wave, an antenna is an important part of an electronic device. At present, with the development of 5G technology, a quantity of antennas required by the electronic device is increased. Some antennas are disposed on a circuit board of the electronic device. When the electronic device is assembled, an antenna disposed on the circuit board is blocked by a back cover, and the antenna needs to receive and send a millimeter wave signal through the back cover. Because of the back cover, the millimeter wave signal is reflected or suffers a loss to a certain extent. This results in large attenuation of the millimeter wave signal, and affects radiation performance of the antenna.
  • the document CN 111 146 583 A provides an antenna module and electronic equipment, the antenna module includes: the antenna module comprises a radiation part and a grounding part which are oppositely arranged, and the surface of the grounding part facing the radiation part is a first reflection surface for reflecting radio frequency signals; the antenna housing is arranged on one side, away from the grounding part, of the radiation part and covers the radiation part, the antenna housing comprises at least two layers of dielectric layers, a second reflection surface used for reflecting at least part of radio-frequency signals is formed on an interface between the adjacent dielectric layers, the first reflection surface, the second reflection surface and the part between the first reflection surface and the second reflection surface form a reflection assembly, the reflection assembly is used for enabling the phase difference among the radio-frequency signals emitted from the second reflection surface to be 2N pi +/-theta, wherein N is an integer, and theta is less than or equal to 45 degrees; and the reflection adjusting structure is used for adjusting the reflectivity of the reflection assembly to the radio frequency signal.
  • Embodiments of this application provide an electronic device with a millimeter wave antenna module.
  • the electronic device can improve radiation performance of an antenna and reduce a size of the electronic device.
  • an embodiment of this application provides an electronic device with a millimeter wave antenna according to claim 1.
  • the phases of the millimeter wave signal reaching the back cover each time are the same. Because the millimeter wave signal reaching the back cover is partially transmitted each time, and phases of the transmitted millimeter wave signal are equal to the phases of the millimeter wave signal reaching the back cover, the phases of the millimeter wave signal transmitted each time are the same, and millimeter wave signals with same phases are reinforced and gained each other. Therefore, a final overall return loss is low, so that much of electromagnetic wave energy flows across the back cover, and high gain effect is obtained.
  • the at least one of the back cover and the circuit board is disposed with an in-phase reflection structure A1, so that the phases of the millimeter wave signal reaching the back cover each time are the same when the millimeter wave signal sent by the millimeter wave antenna module is reflected a plurality of times between the circuit board and the back cover in a shorter distance. This reduces a thickness of the whole electronic device and improves radiation performance of the antenna.
  • the back cover or the circuit board that is disposed with the in-phase reflection structure when the back cover or the circuit board is disposed with the in-phase reflection structure, the back cover or the circuit board that is disposed with the in-phase reflection structure reflects the received millimeter wave signal, and the phase of the received millimeter wave signal is the same as that of the reflected millimeter wave signal.
  • the back cover or the circuit board that is not disposed with the in-phase reflection structure reflects the received millimeter wave signal, and a difference between phases of the reflected millimeter wave signal and the received millimeter wave signal is - ⁇ .
  • the phase of the millimeter wave signal received by the in-phase reflection structure is the same as that of the reflected millimeter wave signal, that is, before and after a reflection, a variation of a phase of a millimeter wave signal reflected by the in-phase reflection structure is zero, therefore, only a direction of the millimeter wave signal is varied, but the phase remains unvaried.
  • the distance between the circuit board and the back cover is related to a first variation phase after a reflection by the back cover, a second variation phase after a reflection by the circuit board, and a wavelength of the millimeter wave signal.
  • the distance between the circuit board and the back cover is a distance between the circuit board that is not disposed with the in-phase reflection structure and the back cover that is disposed with the in-phase reflection structure, and is obtained based on a first variation phase after a reflection by the back cover that is disposed with the in-phase reflection structure, a second variation phase after a reflection by the circuit board that is not disposed with the in-phase reflection structure, and the wavelength of the millimeter wave signal.
  • the distance between the circuit board and the back cover is a distance between the circuit board that is disposed with the in-phase reflection structure and the back cover that is not disposed with the in-phase reflection structure, and is obtained based on a first variation phase after a refection by the back cover that is not disposed with the in-phase reflection structure, a second variation phase after a refection by the circuit board that is disposed with the in-phase reflection structure, and the wavelength of the millimeter wave signal.
  • the distance between the circuit board and the back cover is a distance between the circuit board that is disposed with the in-phase reflection structure and the back cover that is disposed with the in-phase reflection structure, and is obtained based on a first variation phase after a reflection by the back cover that is disposed with the in-phase reflection structure, a second variation phase after a reflection reflected by the circuit board that is disposed with the in-phase reflection structure, and the wavelength of the millimeter wave signal.
  • circuit board or the back cover is disposed with the in-phase reflection structure, it should be understood as that the circuit board or the back cover is disposed with the in-phase reflection structure. If the circuit board or the back cover is not disposed with the in-phase reflection structure, it should be understood as that the circuit board or the back cover is not disposed with the in-phase reflection structure.
  • the distance between the circuit board and the back cover is the distance between the circuit board that is disposed with the in-phase reflection structure and the back cover that is disposed with the in-phase reflection structure and is equal to n* ⁇ /2.
  • the in-phase reflection structure is a single-layer structure.
  • the in-phase reflection structure is disposed on a surface of the back cover facing the circuit board.
  • the circuit board is disposed with the in-phase reflection structure, the in-phase reflection structure is disposed on the surface of the circuit board facing the back cover.
  • the in-phase reflection structure is the single-layer structure, only the in-phase reflection structure needs to be disposed on a side of the back cover facing the circuit board. This does not affect an appearance of the back cover and simplifies the process.
  • the in-phase reflection structure includes a plurality of reflection units disposed at intervals, and each reflection unit is a single-layer metal structure.
  • the back cover includes an inner film layer and a back cover body that are stacked in sequence.
  • the inner film layer has a specific pattern and/or color.
  • the back cover body is made of a transparent material, and the inner film layer is disposed on a surface of the back cover body facing the circuit board.
  • the in-phase reflection structure is disposed on a surface of the inner film layer facing the circuit board.
  • the back cover includes only an inner film layer and a back cover body. This simplifies the process.
  • the millimeter wave signal reaching the back cover each time is a millimeter wave signal reaching the reflection unit, and the distance between the circuit board and the back cover satisfies that phases of the millimeter wave signal reaching the reflection unit each time are the same.
  • the in-phase reflection structure is a double-layer structure includes a first structure layer and a second structure layer.
  • the first structure layer of the in-phase reflection structure is disposed on a surface of the back cover facing the circuit board, and the second structure layer is disposed in the back cover.
  • the circuit board is disposed with the in-phase reflection structure
  • the first structure layer of the in-phase reflection structure is disposed on the surface of the circuit board facing the back cover
  • the second structure layer is disposed on a layer of the circuit board or on a surface of the circuit board facing away from the back cover.
  • the in-phase reflection structure includes a plurality of reflection units disposed at intervals. Each reflection unit includes a first reflection structure and a second reflection structure. First reflection structures of all the reflection units form the first structure layer, and second reflection structures of all the reflection units form the second structure layer.
  • the millimeter wave signal reaching the back cover each time is a millimeter wave signal reaching the first reflection structure, and the distance between the circuit board and the back cover satisfies that phases of the millimeter wave signal reaching the first reflection structure each time are the same.
  • the first reflection structure and the second reflection structure of each reflection unit are correspondingly disposed in a thickness direction of the back cover.
  • the first reflection structure is a square metal sheet
  • the second reflection structure is a cross metal sheet. Because the first reflection structure is a square metal sheet, and the second reflection structure is a cross metal sheet, the in-phase reflection property may be effectively improved.
  • a projection of a square metal sheet of each reflection unit coincides with a projection of a geometric center of the cross metal sheet in the thickness direction of the back cover.
  • the back cover includes an inner film layer, a back cover body, and an outer film layer that are stacked in sequence.
  • the inner film layer is disposed on a surface of the back cover body facing the circuit board
  • the outer film layer is disposed on a surface of the back cover body facing away from the circuit board.
  • the first structure layer of the in-phase reflection structure is disposed on a surface of the inner film layer facing the circuit board
  • the second structure layer is disposed between the back cover body and the outer film layer.
  • the inner film layer has a specific pattern and/or color.
  • the back cover body is made of a glass material, and the outer film layer is made of a transparent material.
  • the outer film layer is used to protect the second structure layer.
  • the pattern and/or color of the inner film layer is presented through the back cover body and the outer film layer and adopted as a pattern and/or color of the back cover.
  • the phases of the millimeter wave signal reaching the back cover each time are the same. Because the millimeter wave signal reaching the back cover is partially transmitted each time, and the phase of the transmitted millimeter wave signal are equal to the phases of the millimeter wave signal reaching the back cover, the phases of the millimeter wave signal transmitted each time are the same, and millimeter wave signals with same phases are reinforced and gained each other. Therefore, a final overall return loss is low, so that much of electromagnetic wave energy flows across the back cover, and high gain effect is obtained.
  • the at least one of the back cover and the circuit board is disposed with an in-phase reflection structure, so that the phases of the millimeter wave signal reaching the back cover each time are the same when the millimeter wave signal sent by the millimeter wave antenna module is reflected a plurality of times between the circuit board and the back cover in a shorter distance. This reduces a thickness of the whole electronic device and improves radiation performance of the antenna.
  • FIG. 1 is a schematic diagram of a structure of an electronic device 1000 with a millimeter wave antenna module (referred to as electronic device 1000 for short in this application) according to this embodiment of this application.
  • the electronic device 1000 may be an electronic device having a wireless communication function, for example, a handheld device, an in-vehicle device, a wearable device, a computer device, a wireless local area network (WLAN, wireless local area network) device, or a router.
  • a wireless communication function for example, a handheld device, an in-vehicle device, a wearable device, a computer device, a wireless local area network (WLAN, wireless local area network) device, or a router.
  • WLAN wireless local area network
  • the electronic device 1000 may also be referred to as a different name, for example, user equipment, an access terminal, a subscriber unit, a subscriber station, a mobile site, a mobile station, a remote station, a remote terminal, a mobile device, a user terminal, a wireless electronic device, a user agent or a user apparatus, a cellular phone, a wireless phone, a session initiation protocol (SIP, session initiation protocol) phone, a wireless local loop (WLL, wireless local loop) station, a personal digital assistant (PDA, personal digital assistant), or a terminal device in a 5G network or future evolution network.
  • SIP session initiation protocol
  • WLL wireless local loop
  • PDA personal digital assistant
  • the electronic device 1000 may also be a device deployed in a wireless access network to provide wireless communication functions, including but not limited to: a base station, a relay station, an access point, an in-vehicle device, a wireless-fidelity (Wi-Fi, wireless-fidelity) site, a wireless backhaul node, a small cell, a micro station, or the like.
  • a base station a relay station
  • an access point an in-vehicle device
  • Wi-Fi wireless-fidelity
  • wireless-fidelity wireless backhaul node
  • small cell a micro station, or the like.
  • the base station may be a base transceiver station (BTS, base transceiver station), a node B (Node B, NB), an evolved node B (evolved Node B, eNB, or eNodeB), a transmission node or a transmission reception point (transmission reception point, TRP, or TP) or a next generation node B (generation node B, gNB) in a new radio system (NR, new radio), a base station or a network device in a future communication system, or the like.
  • BTS base transceiver station
  • Node B Node B
  • eNB evolved node B
  • eNodeB evolved node B
  • TRP transmission reception point
  • TP transmission reception point
  • gNB next generation node B
  • NR new radio system
  • NR new radio
  • the electronic device 1000 includes a housing 100, a display module 200, a circuit board 300, a receiver (not shown in the figure), and a speaker (not shown in the figure).
  • the display module 200 is installed in the housing 100 and matched with the housing 100 to form an accommodation cavity.
  • the circuit board 300, the receiver, and the speaker are installed in the accommodation cavity.
  • the housing 100 may include a frame 110 and a back cover 120.
  • the back cover 120 is fastened to one side of the frame 110.
  • the frame 110 and the back cover 120 may be integrally formed to ensure structure stability of the housing 100.
  • the frame 110 and the back cover 120 may be fastened to each other through assembling.
  • the housing 100 is disposed with a speaker hole 1001.
  • the speaker hole 1001 is connected to an inner side of the housing 100 and an outer side of the housing 100.
  • the "hole” described in this embodiment of this application refers to a hole having a complete hole wall.
  • the display module 200 is fastened on the other side of the frame 110.
  • the display module 200 and the back cover 120 are respectively fastened on two sides of the frame 110.
  • the display module 200 is placed toward the user, and the back cover 120 is placed away from the user.
  • the display module 200 is disposed with a receiving hole 2001, and the receiving hole 2001 is a through hole penetrating the display module 200.
  • a surface of the display module 200 is a front face of the electronic device 1000, and a surface of the electronic device 1000 facing away from the display module 200 is a back face of the electronic device 1000.
  • the back cover 120 is configured to encapsulate the back face of the electronic device 1000.
  • the display module 200 includes a display and a driving circuit of the display.
  • the display module 200 may be a touchable display module.
  • the circuit board 300 is located between the back cover 120 and the display module 200.
  • the circuit board 300 may be a main board (main board) of the electronic device 1000.
  • the receiver is located at a top of the electronic device 1000. Sound emitted by the receiver may be transmitted to the outside of the electronic device 1000 from the receiving hole 2001, to implement a sound playing function of the electronic device 1000.
  • the speaker is located at a bottom of the electronic device 1000. Sound emitted by the speaker may be transmitted to the outside of the electronic device 1000 from the speaker hole 1001, to implement a sound playing function of the electronic device 1000.
  • orientations of the electronic device 1000 indicated by terms such as “top” and “bottom” are mainly orientations when the user uses the electronic device 1000 by hand.
  • a position facing a top side of the electronic device 1000 is “top” and a position facing a bottom side of the electronic device 1000 is “bottom”, which does not indicate or imply that the apparatus or element referred to must have a particular orientation, or must be constructed and operated in a particular orientation, and therefore shall not be construed as a limitation on the electronic device 1000 in an actual application scenario.
  • the bottom of the electronic device 1000 is an end portion on which a headphone hole and a USB hole are disposed.
  • the top of the electronic device 1000 is the other end portion opposite to the end portion on which the headphone hole and the USB hole are disposed.
  • a thickness of the back cover 120 refers to a distance between an inner surface and an outer surface of the back cover 120.
  • the inner surface and the outer surface of the back cover 120 refer to surfaces of the back cover 120 that are substantially parallel to a screen surface of the display module 200.
  • a thickness direction refers to a direction that is perpendicular to the inner surface and the outer surface of the back cover 120, that is, a direction that is perpendicular to the screen surface of the display module 200.
  • FIG. 2 is a schematic cross-sectional view of a partial structure of the electronic device 1000 according to this embodiment of this application.
  • the electronic device 1000 includes the circuit board 300, the back cover 120, and a millimeter wave antenna module 400 disposed on the circuit board 300.
  • the millimeter wave antenna module 400 is disposed on a side of the circuit board 300 facing the back cover 120.
  • the millimeter wave antenna module 400 is configured to send and receive a millimeter wave signal.
  • At least one of the back cover 120 and the circuit board 300 is disposed with an in-phase reflection structure A1.
  • a millimeter wave signal sent by the millimeter wave antenna module 400 is reflected a plurality of times between the circuit board 300 and the back cover 120.
  • a distance between the circuit board 300 and the back cover 120 satisfies that phases of a millimeter wave signal reaching the back cover 120 each time are the same.
  • the back cover 120 reflects the millimeter wave signal
  • the phases of the millimeter wave signal reaching the back cover 120 each time are the same. Because the millimeter wave signal reaching the back cover 120 is partially transmitted each time, and phases of the transmitted millimeter wave signal are equal to the phases of the millimeter wave signal reaching the back cover 120, the phases of the millimeter wave signal transmitted each time are the same, and millimeter wave signals with same phases are reinforced and gained each other.
  • the at least one of the back cover 120 and the circuit board 300 is disposed with the in-phase reflection structure A1, so that the phases of the millimeter wave signal reaching the back cover 120 each time are the same when the millimeter wave signal sent by the millimeter wave antenna module 400 is reflected a plurality of times between the circuit board 300 and the back cover 120 in a shorter distance. This reduces a thickness of the whole electronic device and improves radiation performance of an antenna. A specific principle is described later.
  • the back cover 120 or the circuit board 300 when the back cover 120 or the circuit board 300 is not disposed with the in-phase reflection structure, a surface wave is formed when a small amount of millimeter wave signals sent to the back cover 120 or the circuit board 300 propagate along a surface of the back cover 120 or the circuit board 300. This causes an energy loss.
  • the at least one of the back cover 120 and the circuit board 300 is disposed with the in-phase reflection structure A1
  • the surface wave formed when the signal propagates along the surface of the back cover 120 or the circuit board 300 may be reduced or even eliminated. This reduces the energy loss.
  • the back cover 120 is made of a material that partially reflects and partially transmits millimeter wave signal, for example, a glass material, or a ceramic material.
  • phases are the same in this embodiment of this application is not an absolute and strict definition in mathematical sense, and a small amount of deviation is allowed, for example, the "phases are the same” means that the deviation is allowed to be within a preset phase range.
  • the "phases are the same” may mean that a difference between phases is within a range of - ⁇ /30 to ⁇ /30. Because a phase of 2 ⁇ period is equal to 360°, after the phase is converted into an angle, the "phases are the same” means a difference between angles is within a range of -6° to 6°.
  • the preset phase range may also be another smaller range.
  • the in-phase reflection structure A1 has an in-phase reflection property, that is, a phase of a millimeter wave signal received by the in-phase reflection structure A1 is the same as that of a reflected millimeter wave signal, that is, the phase remains unvaried.
  • the back cover 120 or the circuit board 300 is disposed with the in-phase reflection structure A1
  • the back cover 120 or the circuit board 300 that is disposed with the in-phase reflection structure A1 reflects the received millimeter wave signal, and the phase of the received millimeter wave signal is the same as that of the reflected millimeter wave signal, that is, the phase remains unvaried.
  • the back cover 120 or the circuit board 300 When the back cover 120 or the circuit board 300 is not disposed with the in-phase reflection structure A1, as an ordinary object reflects an electromagnetic wave, the back cover 120 or the circuit board 300 that is not disposed with the in-phase reflection structure A1 reflects the received millimeter wave signal, and a difference between phases of the reflected millimeter wave signal and the received millimeter wave signal is - ⁇ , that is, a phase of a millimeter wave signal received by the back cover 120 or the circuit board 300 that is not disposed with the in-phase reflection structure A1 is varied to - ⁇ after the millimeter wave signal is reflected by the back cover 120 or the circuit board 300 that is not disposed with the in-phase reflection structure A1.
  • a specific principle and a structure of the in-phase reflection structure A1 are introduced later.
  • the phase of the millimeter wave signal received by the in-phase reflection structure A1 is the same as that of the reflected millimeter wave signal, that is, before and after a reflection, a variation of a phase of a millimeter wave signal reflected by the in-phase reflection structure A1 is zero, therefore, only a direction of the millimeter wave signal is varied, but the phase remains unvaried.
  • the in-phase reflection structure A1 By disposing the in-phase reflection structure A1 on the at least one of the back cover 120 and the circuit board 300, the phases of the millimeter wave signal reaching the back cover 120 each time are the same when the millimeter wave signal sent by the millimeter wave antenna module 400 is reflected a plurality of times between the circuit board 300 and the back cover 120 in a shorter distance. A more specific principle is described later.
  • FIG. 2 shows an example in which only the back cover 120 is disposed with the in-phase reflection structure A1.
  • that at least one of the back cover 120 and the circuit board 300 is disposed with the in-phase reflection structure A1 includes: Only the back cover 120 is disposed with the in-phase reflection structure A1. Only the circuit board 300 is disposed with the in-phase reflection structure A1. The back cover 120 is disposed with the in-phase reflection structure A1.
  • FIG. 3 is a schematic diagram in which a millimeter wave signal is reflected and transmitted a plurality of times between a circuit board and a back cover according to this embodiment of this application.
  • a first variation phase of the millimeter wave signal after a reflection by the back cover 120 is set to ⁇ 1
  • a second variation phase after a reflection by the circuit board 300 is set to ⁇ 2
  • a difference between a phase of the millimeter wave signal after a reflection by the back cover 120 and the phase of the millimeter wave signal received by the back cover 120 is ⁇ 1
  • a difference between a phase of the millimeter wave signal after a reflection by the circuit board 300 and a phase of a millimeter wave signal received by the circuit board 300 is ⁇ 2.
  • a distance d between the circuit board 300 and the back cover 120 is related to a first variation phase ⁇ 1 after a reflection by the back cover 120, a second variation phase ⁇ 2 after a reflection by the circuit board 300, and a wavelength of the millimeter wave signal. That is, the distance d between the circuit board 300 and the back cover 120 may be obtained based on the first variation phase ⁇ 1 after a reflection by the back cover 120, the second variation phase ⁇ 2 after a reflection by the circuit board 300, and the wavelength of the millimeter wave signal.
  • the millimeter wave signal sent by the millimeter wave antenna module 400 reaches the back cover 120, the millimeter wave is partially transmitted and partially reflected. It is assumed that a phase of a current millimeter wave signal reaching the back cover 120 is set to ⁇ 0.
  • a difference between the phase of the next millimeter wave signal and a phase ⁇ 0 of a previous millimeter wave signal reaching the back cover 120 is ⁇ 0+2n ⁇ - ⁇ 0, that is, the difference is 0 or an integer multiple of 2 ⁇
  • 2 ⁇ is a phase of one period. Therefore, phases with a difference of an integer multiple of 2 ⁇ are still the same, and an in-phase radiation condition is met, that is, the phases of the millimeter wave signal reaching the back cover 120 each time are the same.
  • S represents a transmission distance
  • ⁇ represents a phase varied after the electromagnetic wave is transmitted by the transmission distance S
  • ⁇ represents the wavelength of millimeter wave signal.
  • ⁇ 1 and ⁇ 2 are either 0, or - ⁇ . It can be seen from the second formula, the distance d between the circuit board 300 and the back cover 120 is positively correlated to an absolute value of the first variation phase ⁇ 1 varied after a reflection by the back cover 120 and an absolute value of the second variation phase ⁇ 2 varied after a reflection by the circuit board 300.
  • the in-phase reflection structure A1 by disposing the in-phase reflection structure A1 on at least one of the back cover 120 and the circuit board 300, when the back cover 120 or the circuit board 300 is disposed with the in-phase reflection structure A1, the back cover 120 or the circuit board 300 that is disposed with the in-phase reflection structure A1 reflects the received millimeter wave signal, and the phase of the received millimeter wave signal is the same as that of the reflected millimeter wave signal, that is, the phase remains unvaried. Therefore, when at least one of the first variation phase ⁇ 1 and the second variation phase ⁇ 2 is zero, an absolute value of ( ⁇ 1+ ⁇ 2) is obviously reduced, and when n phases are the same, the distance d is effectively reduced and the thickness of the whole electronic device is reduced.
  • the distance between the circuit board 300 and the back cover 120 is a distance between the circuit board 300 that is not disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1, and is obtained based on a first variation phase ⁇ 1 after a reflection by the back cover 120 that is disposed with the in-phase reflection structure A1, a second variation phase ⁇ 2 after a reflection by the circuit board 300 that is not disposed with the in-phase reflection structure A1, and a wavelength ⁇ of the millimeter wave signal.
  • the distance between the circuit board 300 and the back cover 120 is a distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is not disposed with the in-phase reflection structure A1, and is obtained based on a first variation phase ⁇ l1 after a reflection by the back cover 120 that is not disposed with the in-phase reflection structure A1, a second variation phase ⁇ 2 after a reflection by the circuit board 300 that is disposed with the in-phase reflection structure A1, and a wavelength ⁇ of the millimeter wave signal.
  • the distance between the circuit board 300 and the back cover 120 is a distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1, and is obtained based on a first variation phase ⁇ l1 after a reflection by the back cover 120 that is disposed with the in-phase reflection structure A1, a second variation phase ⁇ 2 after a reflection by the circuit board 300 that is disposed with the in-phase reflection structure A1, and a wavelength ⁇ of the millimeter wave signal.
  • circuit board 300 or the back cover 120 is disposed with the in-phase reflection structure A1
  • the circuit board 300 or the back cover 120 is disposed with the in-phase reflection structure A1.
  • the circuit board 300 or the back cover 120 is not disposed with the in-phase reflection structure A1, it should be understood as that the circuit board 300 or the back cover 120 is not disposed with the in-phase reflection structure A1.
  • FIG. 2 and FIG. 3 are schematic diagrams in which only the back cover 120 is disposed with the in-phase reflection structure A1, that is, in this embodiment, only the back cover 120 is disposed with the in-phase reflection structure A1.
  • the first variation phase ⁇ 1 after a reflection by a back cover 120 that is disposed with an in-phase reflection structure A1 is equal to 0
  • the second variation phase ⁇ 2 after a reflection by the circuit board 300 that is not disposed with the in-phase reflection structure A1 is equal to - ⁇
  • the distance d between the circuit board 300 and the back cover 120 is a distance between the circuit board 300 and the back cover 120 that is disposed with the in-phase reflection structure A1.
  • the shortest distance between the circuit board 300 and the back cover 120 may be ⁇ /4.
  • the in-phase reflection structure A1 may be integrated with the back cover 120 when the back cover 120 is manufactured, that is, the back cover 120 being the in-phase reflection structure A1 may be integrated, so that a process is simplified.
  • FIG. 4 is a schematic cross-sectional view of a partial structure of an electronic device 1000 according to another embodiment of this application.
  • the distance between the circuit board 300 and the back cover 120 is the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is not disposed with the in-phase reflection structure A1, and obtained based on the first variation phase ⁇ 1 after a reflection by the back cover 120 that is not disposed with the in-phase reflection structure A1, the second variation phase ⁇ 2 after a reflection by the circuit board 300 that is disposed with the in-phase reflection structure A1, and the wavelength ⁇ of the millimeter wave signal.
  • a first variation phase ⁇ 1 after a reflection by the back cover 120 that is not disposed with the in-phase reflection structure A1 is equal to - ⁇
  • a second variation phase ⁇ 2 after a reflection by the circuit board 300 that is disposed with the in-phase reflection structure A1 is equal to 0
  • the distance d between the circuit board 300 and the back cover 120 is the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is not disposed with the in-phase reflection structure A1 and is equal to ⁇ /4+n* ⁇ /2.
  • n is equal to 0, the distance d between the circuit board 300 and the back cover 120 is ⁇ /4.
  • the shortest distance between the circuit board 300 and the back cover 120 may be ⁇ /4.
  • the in-phase reflection structure A1 may be integrated with the circuit board 300 when the circuit board 300 is manufactured, that is, the circuit board 300 being the in-phase reflection structure A1 may be integrated, so that a process is simplified.
  • FIG. 5 is a schematic cross-sectional view of a partial structure of an electronic device 1000 according to still another embodiment of this application.
  • the back cover 120 and the circuit board 300 are disposed with the in-phase reflection structure A1, as described previously, when the back cover 120 and the circuit board 300 are disposed with the in-phase reflection structure A1, the distance between the circuit board 300 and the back cover 120 is the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1, and obtained based on the first variation phase ⁇ 1 after a reflection by the back cover 120 that is disposed with the in-phase reflection structure A1, the second variation phase ⁇ 2 after a reflection by the circuit board 300 that is disposed with the in-phase reflection structure A1, and the wavelength ⁇ of the millimeter wave signal.
  • a first variation phase ⁇ 1 after a reflection by the back cover 120 that is disposed with the in-phase reflection structure A1 is equal to 0
  • a second variation phase ⁇ 2 after a reflection by the circuit board 300 that is disposed with the in-phase reflection structure A1 is equal to 0
  • the distance d between the circuit board 300 and the back cover 120 is the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1 and is equal to n* ⁇ /2.
  • the back cover 120 and the circuit board 300 are disposed with the in-phase reflection structure A1
  • the millimeter wave signal sent by the millimeter wave antenna module 400 is reflected a plurality of times between the circuit board 300 and the back cover 120
  • a required distance is shorter in comparison with the case that one of the back cover 120 and the circuit board 300 is disposed with the in-phase reflection structure A1. Therefore, the distance between the back cover 120 and the circuit board 300 may further be reduced and the thickness of the while device may be reduced.
  • the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1 is equal to 0* ⁇ /2, that is, equal to zero.
  • the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1 is approximately zero, but not equal to zero.
  • the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1 is smaller than a preset value, and the preset value may be 1/m of the wavelength ⁇ , and m may be a value of 100, 110, 120, and so on.
  • a transmission distance that the millimeter wave signal reaching the back cover 120 reaches the circuit board 300 and is reflected to the back cover 120, reaches the circuit board 300, and is reflected to the back cover 120 again is 2d, that is, twice the distance d between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1.
  • phase variation is between - ⁇ /30 and ⁇ /30, that is, an absolute value of the phase variation is 0 and ⁇ /30.
  • ⁇ 2 ⁇ *2d/ ⁇
  • d may be a value that is greater than 0 and that is approximately ⁇ /120.
  • a phase variation ⁇ is within a range thereof, and the back cover 120 and the circuit board 300 are disposed with the in-phase reflection structure A1
  • the distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is disposed with the in-phase reflection structure A1 may be another suitable value.
  • the millimeter wave signal sent by the millimeter wave antenna module 400 is reflected a plurality of times between the circuit board 300 and the back cover 120, and the phases of the millimeter wave signal reaching the back cover 120 each time are basically the same, the millimeter wave signal reaching the back cover 120 each time may be gained each other, to achieve high gain effect.
  • FIG. 6 is a schematic diagram of an overall return loss obtained through simulating a millimeter wave signal in a plurality of cases according to this embodiment of this application.
  • an abscissa is frequency (in GHz) and an ordinate is a return loss, also called an S parameter (in dB).
  • the many cases include (1) case 1: free space (there is no back cover above the millimeter wave antenna module); (2) case 2: There is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the back cover and the circuit board are not disposed with the in-phase reflection structure; and (3) case 3: There is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the back cover is disposed with the in-phase reflection structure.
  • the millimeter wave signal is a millimeter wave signal with frequency of 28 GHz and is used as a test signal.
  • a wavelength of the free space is 10.7 mm, where ⁇ represents a propagation speed of the millimeter wave signal in the free space, and is 3* 10 8 m/s, and f represents frequency of the electromagnetic wave, that is, 28 GHz as described earlier previously.
  • the case 1 is assumed that is an input return loss in the free space is S11-1.
  • the case 2 is assumed that there is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the input return loss is S11-2 when the back cover and the circuit board are not disposed with the in-phase reflection structure.
  • the case 3 is assumed that there is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the input return loss is S11-3 when the back cover is disposed with the in-phase reflection structure.
  • the input return loss is a reflection coefficient of the millimeter wave signal sent by the millimeter wave antenna module. When the input return loss is lower, a loss of the millimeter wave signal is smaller.
  • the input return loss S11-1 in the case 1 and the input return loss S11-3 in the case 3 are both smaller and significantly smaller than the input return loss S11-2 in the case 2.
  • the input return loss S11-1 in the case 1 is about -18 dB
  • the input return loss S11-3 in the case 3 is about -13 dB
  • the input return loss S11-2 in the case 2 is about -5 dB.
  • the case 1 is the free space case, that is, there is no back cover above the millimeter wave antenna module. In this case, the millimeter wave signal is not reflected by the back cover, so the return loss is low.
  • the case 2 is that there is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the back cover and the circuit board each are disposed with the in-phase reflection structure.
  • the distance between the back cover and the circuit board is ⁇ /4, and the back cover and the circuit board that is not disposed with the in-phase reflection structure, it does not meet that when the millimeter wave signal sent by the millimeter wave antenna module is reflected a plurality of times between the circuit board and the back cover, the phases of the millimeter wave signal reaching the back cover each time are basically the same. Therefore, the return loss is high.
  • the case 3 is that there is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the back cover is disposed with the in-phase reflection structure.
  • the phases of the millimeter wave signal reaching the back cover each time is basically the same, that is, phases of millimeter wave signals transmitted each time are the same. Therefore, all transmitted millimeter wave signals may be gained each other because of the same phases. In this case, an overall return loss is low, and full transmission effect is basically realized.
  • the return loss diagram obtained by simulation proves that when only the back cover is disposed with the in-phase reflection structure and the distance between the back cover and the circuit board is ⁇ /4, it meets that when the millimeter wave signal sent by the millimeter wave antenna module is reflected a plurality of times between the circuit board and the back cover, the phases of the millimeter wave signal reaching the back cover each time is basically the same.
  • FIG. 6 is specifically a schematic diagram of an overall return loss obtained when a millimeter wave signal is simulated to be transmitted in various cases.
  • FIG. 7 to FIG. 9 are antenna radiation direction diagrams of a millimeter wave signal in the foregoing three cases according to this embodiment of this application.
  • FIG. 7 shows the case 1, that is, an antenna radiation direction diagram of the millimeter wave signal in a free space (there is no back cover above the millimeter wave antenna module).
  • FIG. 8 shows the case 2, that is an antenna radiation direction diagram of the millimeter wave signal obtained when there is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the back cover and the circuit board are not disposed with the in-phase reflection structure.
  • FIG. 7 shows the case 1, that is, an antenna radiation direction diagram of the millimeter wave signal in a free space (there is no back cover above the millimeter wave antenna module).
  • FIG. 8 shows the case 2, that is an antenna radiation direction diagram of the millimeter wave signal obtained when there is the back cover above the millimeter wave antenna module, the distance between the back cover and the circuit board is ⁇ /4, and the
  • the millimeter wave signal with frequency of 28 GHz is also used as the test signal, gain effect under beams in a plurality of directions is shown in the antenna radiation pattern of the millimeter wave signal in each case as shown in FIG. 7 to FIG. 9 .
  • the millimeter wave signal is scanned in a range of plus or minus 45°.
  • 0°, 30°, and 45° are selected as examples for illustration.
  • a large dark part is a main lobe M1
  • a small part beside the main lobe is a side lobe S1.
  • the return loss of the millimeter wave signal is low.
  • the main lobe M1 of the 0° beam of the millimeter wave signal is scattered but the side lobe S1 is larger.
  • the gain is approximately 8.022 dB
  • the radiation energy is not concentrated, resulting in low radiation efficiency.
  • the side lobe S1 of the 30° beam of the millimeter wave signal is large.
  • the gain is approximately 8.050 dB
  • the side lobe S1 is obviously large, and the gain is actually gains of the main lobe M1 and the side lobe S1. Therefore, the 30° beam radiating facing the 30° direction becomes a scattered beam, resulting in low efficiency.
  • the side lobe S1 of the 45° beam of the millimeter wave signal is large.
  • the gain is approximately 8.888 dB
  • the side lobe S1 is large, and the gain is actually mostly a gain of the side lobe S1. Therefore, the 45° beam radiating facing the 45° direction becomes a scattered beam, resulting in low efficiency.
  • the distance between the back cover and the circuit board is ⁇ /4, and the back cover and the circuit board are not disposed with the in-phase reflection structure, the radiation efficiency is low, and the return loss of the millimeter wave signal is low.
  • the distance between the back cover and the circuit board is ⁇ /4, and the back cover is disposed with the in-phase reflection structure
  • the main lobe M1 of 0° beam of the millimeter wave signal is mainly concentrated in the 0° direction but the side lobe S1 is small.
  • the radiation energy is mainly concentrated in the main lobe M1 in the 0° direction
  • the loss of the 0° beam of the millimeter wave signal is small
  • the gain is large, which is approximately 13.94 dB, so that high gain effect of the 0° beam is implemented.
  • the main lobe M1 of the 30° beam of the millimeter wave signal is mainly concentrated in the 30° direction but the side lobe S1 is small. In this case, the radiation energy is mainly concentrated in the main lobe M1 in the 30° direction.
  • the loss of the 30° beam of the millimeter wave signal is small, and the gain is large, which is approximately 14.28 dB, so that high gain effect of the 30° beam is implemented.
  • the main lobe M1 of the 45° beam of the millimeter wave signal is mainly concentrated in the 45° direction but the side lobe S1 is small. In this case, the radiation energy is mainly concentrated in the main lobe M1 in the 45° direction.
  • the loss of the 45° beam of the millimeter wave signal is small, and the gain is large, which is approximately 12.75 dB, so that high gain effect of the 45° beam is implemented.
  • the radiation energy is mainly concentrated in the main lobe M1 in all directions, so the radiation efficiency is high.
  • the distance between the back cover and the circuit board is ⁇ /4, and the back cover is disposed with the in-phase reflection structure, the gain of the millimeter wave signal is large, and the radiation efficiency is high.
  • the antenna radiation patterns of the beams in the plurality of directions also proves that when only the back cover is disposed with the in-phase reflection structure and the distance between the back cover and the circuit board is ⁇ /4, it meets that when the millimeter wave signal sent by the millimeter wave antenna module is reflected a plurality of times between the circuit board and the back cover, the phases of the millimeter wave signal reaching the back cover each time is basically the same.
  • FIG. 7 to FIG. 9 are also specifically antenna radiation direction diagrams of the millimeter wave signal when the millimeter wave signal is simulated to be transmitted in various cases.
  • the in-phase reflection structure A1 is a single-layer structure.
  • the in-phase reflection structure A1 is disposed on a surface of the back cover 120 facing the circuit board 300.
  • the in-phase reflection structure A1 is disposed on a surface of the circuit board 300 facing the back cover 120.
  • FIG. 2 to FIG. 5 shows specific positions when the in-phase reflection structure A1 is the single-layer structure.
  • FIG. 10 is a schematic plan view of the back cover 120 that is disposed with the in-phase reflection structure A1 according to an embodiment of this application.
  • FIG. 10 is a schematic diagram viewed from an inner surface side of the back cover 120, that is, a side closed to the circuit board 300.
  • the in-phase reflection structure A1 may include a plurality of reflection units R1 disposed at intervals, and each reflection unit R1 is a single-layer metal structure.
  • a single-layer metal structure of each reflection unit R1 may constitute a capacitor or an inductor to form an LC parallel resonant circuit, and may implement an in-phase reflection property through the LC parallel resonant circuit.
  • a shape of the reflection unit R1 shown in FIG. 10 is only an example and does not represent an actual shape of the reflection unit R1.
  • an actual shape of each reflection unit R1 may be set based on a requirement of constituting a capacitance and an inductance to form an LC parallel resonant circuit.
  • FIG. 11 is a schematic diagram of a structure of the back cover 120 according to an embodiment of this application.
  • the back cover 120 includes an inner film layer 120a and a back cover body 120b that are stacked in sequence.
  • the inner film layer 120a has a specific pattern and/or color.
  • the back cover body 120b is made of a transparent material.
  • the inner film layer 120a is disposed on a surface of the back cover body 120b facing the circuit board 300.
  • the in-phase reflection structure A1 is disposed on a surface of the inner film layer 120a facing the circuit board 300.
  • the back cover body 120b may specifically be made of glass.
  • the pattern and/or color of the inner film layer 120a is presented through the back cover body 120b and adopted as a pattern and/or color of the back cover 120.
  • the back cover body 120b may be an outermost layer of the back cover 120.
  • Each reflection unit R1 may be formed on the inner film layer 120a by a pad printing process or a screen-printing silver paste process.
  • the in-phase reflection structure A1 is the single-layer structure, only the in-phase reflection structure A1 needs to be disposed on a side of the back cover 120 facing the circuit board 300. Specifically, the in-phase reflection structure A1 needs to be disposed on a side of the inner film layer 120a of the back cover 120 facing the circuit board 300. This does not affect an appearance of the back cover 120 and simplifies the process.
  • a millimeter wave signal reaching the back cover 120 each time is a millimeter wave signal reaching the reflection unit R1
  • a distance between the circuit board 300 and the back cover 120 satisfies that phases of millimeter wave signal reaching the reflection unit R1 each time are the same.
  • the distance between a circuit board 300 and the back cover 120 is specifically a distance between a circuit board 300 that is not disposed with the in-phase reflection structure A1 and a reflection unit R1 of the back cover 120 that is disposed with the in-phase reflection structure A1.
  • the distance between the circuit board 300 and the back cover 120 is a distance between the circuit board 300 that is disposed with the in-phase reflection structure A1 and a reflection unit R1 in a back cover 120 that is not disposed with the in-phase reflection structure A1.
  • the distance between the circuit board 300 and the back cover 120 is a distance between a reflection unit R1 in the circuit board 300 that is disposed with the in-phase reflection structure A1 and the reflection unitR1 in the back cover 120 that is disposed with the in-phase reflection structure A1.
  • a spacing between the reflection units R1 is small, and significantly smaller than a size of the reflection unit R1. Therefore, although the in-phase reflection structure A1 includes a plurality of reflection units R1 disposed at intervals, due to the small spacing between the reflection units R1, when at least one of the circuit board 300 and the back cover 120 is disposed with the in-phase reflection structure A1, a millimeter wave signal reflected between the circuit board 300 and the back cover 120 may be transmitted to a reflection unit R1 of the in-phase reflection structure A1 and reflected by the reflection unit R1.
  • FIG. 12 is a schematic diagram of a structure of the back cover 120 according to invention.
  • FIG. 13 is a schematic diagram of a reflection unit R1 according to the invention.
  • the in-phase reflection structure A1 is the double-layer structure, including a first structure layer A11 and a second structure layer A12. As shown in FIG. 12 , when the back cover 120 is disposed with the in-phase reflection structure A1, a first structure layer A11 of the in-phase reflection structure A1 is disposed on a surface of the back cover 120 facing the circuit board 300, and a second structure layer A12 is disposed in the back cover 120.
  • FIG. 12 shows only a schematic diagram in which the in-phase reflection structure A1 is disposed in the back cover 120.
  • the first structure layer A11 of the in-phase reflection structure A1 is disposed on a surface of the circuit board 300 facing the back cover 120
  • the second structure layer A12 is disposed on a certain layer of the circuit board 300 or on a surface of the circuit board 300 facing away from the back cover 120.
  • the in-phase reflection structure A1 includes a plurality of reflection units R1 disposed at intervals.
  • Each reflection unit R1 includes a first reflection structure R11 and a second reflection structure R12.
  • First reflection structures R11 of all the reflection units R1 form the first structure layer A11
  • the second reflection structures R12 of all the reflection units R1 form the second structure layer A12.
  • the plurality of reflection units R1 disposed at intervals are disposed at intervals along a plane perpendicular to a thickness direction of the back cover 120.
  • Each reflection unit R1 includes a first reflection structure R11 and a second reflection structure R12 that are disposed at intervals in the thickness direction of the back cover 120.
  • the millimeter wave signal reaching the back cover 120 each time is a millimeter wave signal reaching the first reflection structure R11/first structure layer A11, and the distance between the circuit board 300 and the back cover 120 satisfies that phases of the millimeter wave signal reaching the first reflection structure/first structure layer A11 each time are the same.
  • the distance between the circuit board 300 and the back cover 120 is specifically a distance between the circuit board 300 that is not disposed with the in-phase reflection structure A1 and a first reflection structure R11/first structure layer A11 of the back cover 120 that is disposed with the in-phase reflection structure A1.
  • the distance between the circuit board 300 and the back cover 120 is a distance between a first reflection structure R11/first structure layer A11 in the circuit board 300 that is disposed with the in-phase reflection structure A1 and the back cover 120 that is not disposed with the in-phase reflection structure A1.
  • the distance between the circuit board 300 and the back cover 120 is a distance between the first reflection structure R11/first structure layer A11 in the circuit board 300 that is disposed with the in-phase reflection structure A1 and a first reflection structure R11/first structure layer A11 in the back cover 120 that is disposed with the in-phase reflection structure A1.
  • a first reflection structure R11 and a second reflection structure R12 of each reflection unit R1 are correspondingly disposed in the thickness direction of the back cover.
  • the first reflection structure R11 is a square metal sheet
  • the second reflection structure R12 is a cross metal sheet.
  • the first reflection structure R11 is specifically a square metal sheet. In other embodiments, the first reflection structure R11 may also be a rectangular metal sheet.
  • That the first reflection structure R11 and the second reflection structure R12 of each reflection unit R1 are correspondingly disposed in the thickness direction of the back cover may mean that a projection of the first reflection structure R11 of each reflection unit R1 coincides with a projection of a geometric center of the second reflection structure R12 in the thickness direction of the back cover. Because the first reflection structure R11 is configured as a square metal sheet, the second reflection structure R12 is configured as a cross metal sheet, and the projection of the square metal sheet of each reflection unit R1 coincides with the projection of the geometric center of the cross metal sheet in the thickness direction of the back cover 120, in-phase reflection precision may be effectively improved.
  • a size of the first reflection structure R11 that is a square metal sheet may be smaller than a size of the second reflection structure R12 that is a cross metal sheet.
  • the in-phase reflection property of the in-phase reflection structure A1 may be effectively improved.
  • the back cover 120 when the in-phase reflection structure A1 is the double-layer structure, the back cover 120 includes an inner film layer 120a, a back cover body 120b, and an outer film layer 120c that are stacked in sequence.
  • the inner film layer 120a is disposed on the surface of the back cover body 120b facing the circuit board 300
  • the outer film layer 120c is disposed on a surface of the back cover body 120b facing away from the circuit board 300.
  • the back cover 120 is disposed with the in-phase reflection structure A1
  • the first structure layer A11 of the in-phase reflection structure A1 is disposed on the surface of the inner film layer 120a facing the circuit board 300
  • the second structure layer A12 is disposed between the back cover body 120b and the outer film layer 120c.
  • the inner film layer 120a has a specific pattern and/or color.
  • the back cover body 120b is made of a glass material
  • the outer film layer 120c is made of a transparent material.
  • the outer film layer 120c is configured to protect the second structure layer A12.
  • the pattern and/or color of the inner film layer 120a is presented through the back cover body 120b and the outer film layer 120c, and adopted as the pattern and/or color of the back cover 120.
  • the back cover 120 may further include an outer film layer 120c, to protect the in-phase reflection structure A1 as a whole.
  • the outer film layer 120c may also have a pattern and/or color, and cooperate with the inner film layer 120a to present an overall pattern and/or color, and cover the in-phase reflection structure A1.
  • the outer film layer 120c may be made of transparent resin, transparent plastic, and the like.
  • the second structure layer A12 is disposed between the back cover body 120b and the outer film layer 120c in a plurality of manners.
  • the second structure layer A12 may first be formed on a surface of the outer film layer 120c, and a surface of the outer film layer 120c that is disposed with the second structure layer A12 and on which the second structure layer A12 is disposed faces a surface of the back cover body 120b facing away from the inner film layer 120a and is adhered to the surface of the back cover body 120b facing away from the inner film layer 120a by bonding or the like.
  • the surface of the back cover body 120b facing away from the inner film layer 120a is etched to form an accommodating groove corresponding to the second structure layer A12, a metal wire or the like is embedded in the accommodating groove to form the second structure layer A12, and then the outer film layer 120c is covered on the surface of the back cover body 120b facing away from the inner film layer 120a.
  • the outer film layer 120c may include a transparent film layer and a coating film layer that is disposed on a surface of the transparent film layer facing away from the back cover body 120b.
  • the second structure layer A12 is formed on a surface of the transparent film layer opposite to the coating film layer.
  • the coating film layer has a specific pattern and/or color, and cooperated with the inner film layer 120a to present an overall pattern and/or color, and cover the in-phase reflection structure A1.
  • the outer film layer 120c may be only a coating film layer and may be directly covered on the surface of the back cover body 120b facing away from the inner film layer 120a by a process such as coating.
  • FIG. 14 is a schematic plan view of an in-phase reflection structure A1 when the back cover 120 is disposed with the in-phase reflection structure A1 according to the invention.
  • FIG. 14 is a schematic diagram viewed from an outer surface side of the back cover 120, that is, a side facing away from the circuit board 300.
  • the in-phase reflection structure A1 includes a plurality of reflection units R1 disposed at intervals, and the reflection units are distributed in a matrix on the back cover 120. Because the size of a first reflection structure R11 that is a square metal sheet is smaller than the size of the second reflection structure R12 that is a cross metal sheet, and the first reflection structure R11 of the square metal sheet is disposed on a side of the inner film layer 120a facing the circuit board 300, only the second reflection structure R12 that is a cross metal sheet may be seen when FIG. 14 is viewed from the outer surface side of the back cover 120.
  • a spacing between second reflection structures R12 is small.
  • adjacent second reflection structures R12 may be connected to each other, to form an overall second structure layer A12, and facilitates manufacturing and formation in the back cover 120. Because the first reflection structure R11 is smaller than the second reflection structure R12, the first reflection structures R11 of the plurality of reflection units R1 are disposed at intervals.
  • the second reflection structure R12 is a cross metal sheet
  • the adjacent second reflection structures R12 are connected to each other by four protruding parts of the cross metal sheet, and a spacing J1 is formed between the cross metal sheets through the four protruding parts, so that the inner film layer 120a may present a corresponding pattern and/or color, and reflection effect may be ensured.
  • FIG. 14 also shows a position of the millimeter wave antenna module 400. It can be seen from FIG. 14 that a projection of the millimeter wave antenna module 400 on the in-phase reflection structure A1 is approximately located in a middle of the in-phase reflection structure A1.
  • FIG. 12 to FIG. 14 uses an example in which the in-phase reflection structure A1 is disposed in the back cover 120.
  • the in-phase reflection structure A1 is a double-layer structure and the circuit board 300 is disposed with the in-phase reflection structure A1
  • the first structure layer A11 of the in-phase reflection structure A1 is disposed on the surface of the circuit board 300 facing the back cover 120
  • the second structure layer A12 is disposed on the certain layer of the circuit board 300 or on the surface of the circuit board 300 facing away from the back cover 120.
  • an area of the circuit board 300 that is correspondingly provided with the in-phase reflection structure A1 is a clearance area for removing a circuit and a copper foil, and the like, so that transmission of the millimeter wave signal is not blocked and interfered.
  • a structure of the in-phase reflection structure A1 that is disposed in the circuit board 300 is the same as that of the in-phase reflection structure A1 that is disposed in the back cover 120, and more details are described herein.
  • the first structure layer A11 and the second structure layer A12 constitute the LC parallel resonant circuit.
  • the phase of the received millimeter wave signal is the same as that of the reflected millimeter wave signal, to implement the in-phase reflection property.
  • the back cover 120 or the circuit board 300 is disposed with the in-phase reflection structure A1
  • the millimeter wave signal reaching the back cover 120 or the circuit board is first transmitted to the first structure layer A11, to constitute the LC parallel resonant circuit through the first structure layer A11 and the second structure layer A12 for reflection. This may ensure that a phase of a millimeter wave signal transmitted inside any first structure layer A11 is the same as that of a millimeter wave signal transmitted outside the first structure layer A11, to implement the in-phase reflection property.
  • the in-phase reflection structure A1 when the back cover 120 or the circuit board 300 is disposed with the in-phase reflection structure A1, the in-phase reflection structure A1 may be disposed on an entire area of a corresponding surface of the back cover 120 or the circuit board 300, or only on a partial area of the corresponding surface of the back cover 120 or the circuit board 300.
  • the partial area of the corresponding surface of the back cover 120 or the circuit board 300 on which the in-phase reflection structure A1 is disposed may be a target area in which the millimeter wave antenna module 400 radiates towards periphery by a preset radiation range from a projection area on the back cover 120 or the circuit board 300 as a center.
  • the most edge position of the target area may be a position at which reflected energy of the millimeter wave signal is small and may be negligible, for example, 1/100 of original energy.
  • the partial area of the corresponding surface of the back cover 120 or the circuit board 300 on which the in-phase reflection structure A1 is disposed may be a target area in which the millimeter wave antenna module 400 radiates beams of the millimeter wave signal to a preset radiation range from a projection area on the back cover 120 as a center.
  • the partial area of the corresponding surface of the back cover 120 or the circuit board 300 on which the in-phase reflection structure A1 is disposed may be an area corresponding to the target area.
  • the projection range of a beam of the millimeter wave signal sent by the millimeter wave antenna module 400 on the back cover 120 refers to a projection range of a scanning beam of the millimeter wave signal that scans in a range of plus or minus 45° and that is on the back cover 120.
  • the in-phase reflection structure A1 that is disposed on the back cover 120 may be the same as or different from the in-phase reflection structure A1 that is disposed on the circuit board 300.
  • the in-phase reflection structure A1 that is disposed on the back cover 120 and the in-phase reflection structure A1 that is disposed on the circuit board 300 may both be the foregoing single-layer structure or double-layer structure.
  • the in-phase reflection structure A1 that is disposed on the back cover 120 is the single-layer structure
  • the in-phase reflection structure A1 that is disposed on the circuit board 300 is the double-layer structure.
  • the in-phase reflection structure A1 that is disposed on the back cover 120 is the double-layer structure
  • the in-phase reflection structure A1 that is disposed on the circuit board 300 is the single-layer structure.
  • the back cover 120 and the circuit board 300 may select the in-phase reflection structure A1 that is the single-layer structure or the in-phase reflection structure A1 that is the double-layer structure based on respective structures, to batter adapt to their own configurations and meet requirements for overall layout.
  • the millimeter wave signal that is reflected between the circuit board 300 and the back cover 120 may be transmitted to the reflection unit R1 of the in-phase reflection structure A1.
  • a reflection unit R1 in the in-phase reflection structure A1 that is the single-layer structure or a reflection unit R1 in the in-phase reflection structure A1 that is the double-layer structure because there is a certain distance between the foregoing structure and the reflection unit R1, a surface wave may not be formed when the millimeter wave signal propagates along a surface of the circuit board 300 or the back cover 120.
  • the in-phase reflection structure A1 of this application may also reduce or even eliminate the surface wave formed on the back cover 120 and/or the circuit board 300 that is disposed with the in-phase reflection structure A1, to avoid an energy loss due to the formed surface wave.
  • an area that is on the circuit board 300 and on which the in-phase reflection structure A1 is disposed may be smaller than an area that is on the back cover 120 and on which the in-phase reflection structure A1 is disposed.
  • the area that is on the circuit board 300 and on which the in-phase reflection structure A1 is disposed may correspondingly be an area obtained by the area that is on the back cover 120 and on which the in-phase reflection structure A1 is disposed subtracting an area corresponding to the millimeter wave antenna module 400.
  • FIG. 15 is a schematic diagram of a reflection phase obtained when a millimeter wave signal is simulated to pass through a back cover that is disposed with an in-phase reflection structure.
  • FIG. 16 is a schematic diagram of a reflection amplitude obtained when a millimeter wave signal is simulated to pass through a back cover that is disposed with an in-phase reflection structure, that is, a schematic diagram of a return loss/reflection coefficient.
  • a millimeter wave signal with frequency of 28 GHz is used as a test signal.
  • a back cover 120 made of glass back cover and the foregoing in-phase reflection structure A1 that is the double-layer structure, for example, are used in a simulation test.
  • a reflection amplitude of the back cover 120 that is with the in-phase reflection structure is still large, that is, a return loss/reflection coefficient is still large, approximately about -2.15 dB. Therefore, a large amount of millimeter wave signals are reflected, and a small amount of millimeter wave signals are transmitted.
  • phases of the millimeter wave signal reaching the back cover each time are basically the same, that is, phases of a millimeter wave signal transmitted each time are the same. Therefore, all transmitted millimeter wave signals are gained each other because of the same phases.
  • an overall return loss is low, and full transmission effect may be basically achieved.
  • FIG. 16 is only a schematic diagram of a return loss when the millimeter wave signal is simulated to be reflected once by the back cover 120, and a distance factor is not considered.
  • FIG. 6 is a schematic diagram of an overall return loss obtained when the millimeter wave signal is simulated to be transmitted in various cases, for example, a schematic diagram of the overall return loss obtained when the millimeter wave signal is transmitted by the back cover 120 that is disposed with the in-phase reflection structure A1. Therefore, although the return loss/reflection coefficient of the millimeter wave signal reflected once by the back cover 120 is high, the phases of the millimeter wave signal reaching the back cover each time are basically the same, that is, the phases of the millimeter wave signals transmitted each time are the same. Therefore, all the transmitted millimeter wave signals are gained each other because of the same phases. Finally, the overall return loss is low.
  • the plurality of reflection units R1 included in the in-phase reflection structure A1 may be disposed in the matrix as described previously, may be disposed in a plurality of ring arrays that have different radii and that are centered on the millimeter wave antenna module 400, or may be disposed in other ways.
  • the beams of the millimeter wave signal may be disposed in rows and columns along a scanning direction in a projection range on the back cover 120.
  • FIG. 17 is a schematic plan view of a millimeter wave antenna module 400 according to an embodiment of this application.
  • FIG. 18 is a schematic cross-sectional view of a millimeter wave antenna module 400 according to an embodiment of this application.
  • the millimeter wave antenna module 400 includes a plurality of antennas 401.
  • the plurality of antennas 401 form an antenna array.
  • a projection range of a millimeter wave signal beam sent by the millimeter wave antenna module 400 on the back cover 120 refers to a projection range of beams of millimeter wave signals sent by the plurality of antennas on the back cover 120.
  • the projection of the millimeter wave antenna module 400 on the back cover 120 refers to projections of the plurality of antennas on the back cover 120.
  • the antenna 401 is a millimeter wave antenna, and the antenna array including a plurality of antennas 401 is a millimeter wave antenna array.
  • the millimeter wave antenna module 400 further includes an antenna substrate 402.
  • the plurality of antennas 401 are disposed on the antenna substrate 402 in a row at intervals.
  • the antenna substrate 402 is an insulating medium substrate.
  • the antenna substrate 402 includes a first surface 402a and a second surface 402b.
  • the first surface 402a is a surface facing the back cover 120
  • the second surface 402b is a surface facing away from the back cover 120.
  • Each antenna 401 includes an upper metal sheet 401a and a lower metal sheet 401b.
  • the upper metal sheet 401a and the lower metal sheet 401b are disposed at intervals, and a projection of the upper metal sheet 401a substantially coincides with a projection of the lower metal sheet 401b in a direction from the first surface 402a to the second surface 402b.
  • the upper metal sheet 401a is disposed at a position that is in the antenna substrate 402 and that is close to the first surface 402a
  • the lower metal sheet 401b is disposed at a position that is in the antenna substrate 402 and that is close to the second surface 402b.
  • the upper metal sheet 401a and the lower metal sheet 401b are in a patch shape and substantially disposed in parallel to the first surface 402a and the second surface 402b in the antenna substrate 402, that is, substantially parallel to an inner surface of a back cover 120 or a surface of the circuit board 300.
  • the lower metal sheet 401b is disposed with a feed point K1.
  • the lower metal sheet 401b is connected to a feed source (not shown) through the feed point K1, and the lower metal sheet 401b is spatially coupled with the upper metal sheet 401a, to transmit a feed signal to the upper metal sheet 401a, then generate a millimeter wave signal through the upper metal sheet 401a and the lower metal sheet 401b, and radiate the millimeter wave signal toward the back cover 120 through the upper metal sheet 401a.
  • antennas 401 are the same, only one antenna 401 is used as an example for description.
  • Each antenna 401 constitutes a patch antenna by using the upper metal sheet 401a and the lower metal sheet 401b, and is formed on the antenna substrate 402 by a laser process or the like.
  • each antenna 401 may be a flexible printed circuit (FPC, flexible printed circuit) antenna that is disposed on the antenna substrate 402.
  • the FPC antenna refers to a metal antenna pattern formed on the FPC.
  • the FPC antenna may be fastened on the antenna substrate 402 by bonding, embedding, welding, or the like.
  • the millimeter wave antenna module 400 may be carried on a surface of the circuit board 300 facing the back cover 120.
  • a groove that penetrates or does not penetrate the circuit board 300 may be disposed on the surface of the circuit board 300 facing the back cover 120, and the millimeter wave antenna module 400 is accommodated in the groove, to reduce a thickness of the whole electronic device.
  • a structure of the millimeter wave antenna module 400 may be a structure of the millimeter wave antenna module 400 included in the electronic device 1000 or a structure of the millimeter wave antenna module used in the foregoing simulation.
  • the millimeter wave antenna module 400 may also be of another structure.
  • the millimeter wave antenna module includes only one or more antennas 401 and does not include an antenna substrate 402, and a structure of the antenna 401 is different from the foregoing structure, for example, may be a planner invented F antenna (PIFA, Planner Invented F antenna), and the antenna 401 is directly formed on the circuit board 300.
  • PIFA Planner invented F antenna
  • the back cover 120 reflects the millimeter wave signal
  • the phases of the millimeter wave signal reaching the back cover 120 each time are the same. Because the millimeter wave signal reaching the back cover 120 is partially transmitted each time, and phases of the transmitted millimeter wave signal are equal to the phases of the millimeter wave signal reaching the back cover 120, the phases of the millimeter wave signal transmitted each time are the same, and millimeter wave signals with same phases are reinforced and gained each other.
  • the at least one of the back cover 120 and the circuit board 300 is disposed with the in-phase reflection structure A1, so that the phases of the millimeter wave signal reaching the back cover 120 each time are the same when the millimeter wave signal sent by the millimeter wave antenna module 400 is reflected a plurality of times between the circuit board 300 and the back cover 120 in a shorter distance. This reduces a thickness of the whole electronic device and improves radiation performance of the antenna.

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Claims (12)

  1. Eine elektronische Vorrichtung (1000), umfassend:
    eine Leiterplatte (300);
    eine Rückabdeckung (120); und
    ein Millimeterwellen-Antennenmodul (400), das auf einer Oberfläche der Leiterplatte (300) angeordnet ist, die der Rückabdeckung (120) zugewandt ist und mindestens dazu eingerichtet ist, ein Millimeterwellensignal zu senden, wobei
    mindestens eine der Rückabdeckung (120) und der Leiterplatte (300) mit einer In-Phase-Reflexionsstruktur (A1) versehen ist, wobei die In-Phase-Reflexionsstruktur (A1) zum Reflektieren eines empfangenen Millimeterwellensignals konfiguriert ist, die Phase eines Millimeterwellensignals, das von der In-Phase-Reflexionsstruktur (A1) empfangen wird, mit der eines reflektierten Millimeterwellensignals identisch ist, das Millimeterwellensignal, das vom Millimeterwellen-Antennenmodul (400) gesendet wird, mehrfach zwischen der Leiterplatte (300) und der Rückabdeckung (120) reflektiert wird, und ein Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) so ist, dass die Phasen des jedes Mal auf die Rückabdeckung (120) treffenden Millimeterwellensignals identisch sind;
    wobei die In-Phase-Reflexionsstruktur (A1) eine Doppelschichtstruktur ist, die eine erste Strukturschicht (A11) und eine zweite Strukturschicht (A12) umfasst;
    wobei die In-Phase-Reflexionsstruktur (A1) mehrere reflektierende Einheiten (R1) umfasst, die mit Abstand zueinander angeordnet sind, wobei jede reflektierende Einheit (R1) eine erste Reflektionsstruktur (R11) und eine zweite Reflektionsstruktur (R12) umfasst, die ersten Reflektionsstrukturen (R11) aller reflektierenden Einheiten (R1) die erste Strukturschicht (A11) bilden und die zweiten Reflektionsstrukturen (R12) aller reflektierenden Einheiten (R1) die zweite Strukturschicht (A12) bilden;
    wenn die Rückabdeckung (120) mit der In-Phase-Reflexionsstruktur (A1) versehen ist, befindet sich die erste Strukturschicht (A11) auf einer der Leiterplatte (300) zugewandten Oberfläche der Rückabdeckung (120), und die zweite Strukturschicht (A12) befindet sich in der Rückabdeckung (120);
    wenn die Leiterplatte (300) mit der In-Phase-Reflexionsstruktur (A1) versehen ist, befindet sich die erste Strukturschicht (A11) auf der der Rückabdeckung (120) zugewandten Oberfläche der Leiterplatte (300), und die zweite Strukturschicht (A12) befindet sich auf einer Schicht der Leiterplatte (300) oder auf einer von der Rückabdeckung (120) abgewandten Oberfläche der Leiterplatte (300), dadurch gekennzeichnet, dass die erste Reflektionsstruktur (R11) ein quadratisches Metallblech und die zweite Reflektionsstruktur (R12) ein gekreuztes Metallblech ist; und die erste Reflektionsstruktur (R11) kleiner als die zweite Reflektionsstruktur (R12) ist .
  2. Elektronisches Gerät (1000) gemäß Anspruch 1, wobei, wenn die Rückabdeckung (120) oder die Leiterplatte (300) mit der In-Phase-Reflexionsstruktur (A1) versehen ist, die Rückabdeckung (120) oder die Leiterplatte (300), die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, so konfiguriert ist, dass sie das empfangene Millimeterwellensignal reflektiert, und die Phase des empfangenen Millimeterwellensignals dieselbe ist wie die des reflektierten Millimeterwellensignals;
    Wenn die Rückabdeckung (120) nicht mit der In-Phase-Reflexionsstruktur (A1) versehen ist, ist die Rückabdeckung (120), die nicht mit der In-Phase-Reflexionsstruktur (A1) versehen ist, so konfiguriert, dass sie das empfangene Millimeterwellensignal reflektiert, und der Unterschied zwischen den Phasen des reflektierten Millimeterwellensignals und des empfangenen Millimeterwellensignals beträgt -π.
  3. Elektronisches Gerät (1000) gemäß Anspruch 2, wobei der Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) in Beziehung steht zu einer ersten Phasenvariation nach der Reflexion des Millimeterwellensignals durch die Rückabdeckung (120), einer zweiten Phasenvariation nach der Reflexion des Millimeterwellensignals durch die Leiterplatte (300) und einer Wellenlänge des Millimeterwellensignals.
  4. Elektronisches Gerät (1000) gemäß Anspruch 3, wobei der Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) d = n*λ/2 - (Δφ1 + Δφ2)*λ/4π ist, Δφ1 bezeichnet die erste Phasenvariation, die nach der Reflexion des Millimeterwellensignals durch die Rückabdeckung (120) auftritt, Δφ2 bezeichnet die zweite Phasenvariation, die nach der Reflexion des Millimeterwellensignals durch die Leiterplatte (300) auftritt, λ bezeichnet die Wellenlänge des Millimeterwellensignals und n ist 0 oder eine positive ganze Zahl.
  5. Elektronisches Gerät (1000) gemäß Anspruch 4, wobei, wenn nur die Leiterplatte (300) mit der In-Phase-Reflexionsstruktur (A1) versehen ist, der Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) der Abstand (d) zwischen der Leiterplatte (300), die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, und der Rückabdeckung (120), die nicht mit der In-Phase-Reflexionsstruktur (A1) versehen ist, ist und basierend auf einer ersten Phasenvariation nach der Reflexion des Millimeterwellensignals durch die Rückabdeckung (120), die nicht mit der In-Phase-Reflexionsstruktur (A1) versehen ist, einer zweiten Phasenvariation nach der Reflexion des Millimeterwellensignals durch die Leiterplatte (300), die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, und der Wellenlänge des Millimeterwellensignals bestimmt wird;
    Wenn sowohl die Rückabdeckung (120) als auch die Leiterplatte (300) jeweils mit der In-Phase-Reflexionsstruktur (A1) versehen sind, ist der Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) der Abstand (d) zwischen der Leiterplatte (300), die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, und der Rückabdeckung (120), die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, und wird auf Basis einer ersten Phasenänderung berechnet, nachdem das Millimeterwellensignal von der Rückabdeckung (120) mit der In-Phase-Reflexionsstruktur (A1) reflektiert wurde, einer zweiten Phasenänderung, nachdem das Millimeterwellensignal von der Leiterplatte (300) mit der In-Phase-Reflexionsstruktur (A1) reflektiert wurde, sowie der Wellenlänge des Millimeterwellensignals.
  6. Das elektronische Gerät (1000) gemäß Anspruch 5, wobei, wenn nur die Leiterplatte (300) mit der In-Phase-Reflexionsstruktur (A1) versehen ist, Δφ1 = -π und Δφ2 = 0, der Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) der Abstand (d) zwischen der Leiterplatte (300) ist, die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, und der Rückabdeckung (120), und gleich λ/4 + n*λ/2.
  7. Das elektronische Gerät (1000) gemäß Anspruch 5, wobei, wenn sowohl die Leiterplatte (300) als auch die Rückabdeckung (120) jeweils mit der In-Phase-Reflexionsstruktur (A1) versehen sind, Δφ1 = 0 und Δφ2 = 0, der Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) der Abstand (d) zwischen der Leiterplatte (300), die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, und der Rückabdeckung (120), die mit der In-Phase-Reflexionsstruktur (A1) versehen ist, und gleich n*λ/2.
  8. Das elektronische Gerät (1000) gemäß Anspruch 1, wobei, wenn die Rückabdeckung (120) mit der In-Phase-Reflexionsstruktur (A1) versehen ist, das Millimeterwellensignal, das die Rückabdeckung (120) jeweils erreicht, ein Millimeterwellensignal ist, das die erste Reflexionsstruktur (R11) erreicht, und der Abstand (d) zwischen der Leiterplatte (300) und der Rückabdeckung (120) so bemessen ist, dass die Phasen des Millimeterwellensignals, das jeweils die erste Reflexionsstruktur (R11) erreicht, gleich sind.
  9. Das elektronische Gerät (1000) gemäß Anspruch 8, wobei die erste Reflexionsstruktur (R11) und die zweite Reflexionsstruktur (R12) jeder Reflexionseinheit (R1) entsprechend in Richtung der Dicke der Rückabdeckung (120) angeordnet sind.
  10. Das elektronische Gerät (1000) gemäß Anspruch 1, wobei eine Projektion eines quadratischen Metallplättchens jeder Reflexionseinheit (R1) mit einer Projektion des geometrischen Mittelpunkts des Kreuzmetallplättchens in der Dicke der Rückabdeckung (120) zusammenfällt.
  11. Das elektronische Gerät (1000) gemäß Anspruch 1, wobei die Rückabdeckung (120) eine innere Folienschicht (120a), einen Rückabdeckungskörper (120b) und eine äußere Folienschicht (120c) aufweist, die nacheinander gestapelt sind, die innere Folienschicht (120a) auf einer Oberfläche des Rückabdeckungskörpers (120b) angeordnet ist, die zur Leiterplatte (300) zeigt, die äußere Folienschicht (120c) auf einer Oberfläche des Rückabdeckungskörpers (120b) angeordnet ist, die von der Leiterplatte (300) abgewandt ist, und wenn die Rückabdeckung (120) mit der in-Phase-Reflexionsstruktur (A1) als Doppelstrukturschicht versehen ist, befindet sich die erste Strukturschicht (A11) der in-Phase-Reflexionsstruktur (A1) als Doppelstrukturschicht auf einer Oberfläche der inneren Folienschicht (120a), die zur Leiterplatte (300) weist, und die zweite Strukturschicht (A12) ist zwischen dem Rückabdeckungskörper (120b) und der äußeren Folienschicht (120c) angeordnet.
  12. Das elektronische Gerät (1000) gemäß Anspruch 11, wobei die innere Folienschicht (120a) ein spezifisches Muster und/oder eine spezifische Farbe aufweist, der Rückabdeckungskörper (120b) aus einem Glasmaterial besteht, die äußere Folienschicht (120c) aus einem transparenten Material besteht, die äußere Folienschicht (120c) zum Schutz der zweiten Strukturschicht (A12) dient und das Muster und/oder die Farbe der inneren Folienschicht (120a) durch den Rückabdeckungskörper (120b) und die äußere Folienschicht (120c) präsentiert und als Muster und/oder Farbe der Rückabdeckung (120) übernommen wird,
EP22871741.9A 2021-09-24 2022-08-24 Elektronische vorrichtung mit millimeterwellenantennenmodul Active EP4231612B1 (de)

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