EP4196314A1 - Procédé et dispositif d'assemblage à température critique de deux couches de composant - Google Patents

Procédé et dispositif d'assemblage à température critique de deux couches de composant

Info

Publication number
EP4196314A1
EP4196314A1 EP21749631.4A EP21749631A EP4196314A1 EP 4196314 A1 EP4196314 A1 EP 4196314A1 EP 21749631 A EP21749631 A EP 21749631A EP 4196314 A1 EP4196314 A1 EP 4196314A1
Authority
EP
European Patent Office
Prior art keywords
component layer
component
layer
material thickness
energy input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21749631.4A
Other languages
German (de)
English (en)
Inventor
Christoph BANTEL
Emilia SCHWINDT
Nathanael Eisenreich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP4196314A1 publication Critical patent/EP4196314A1/fr
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/12—Copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
    • H01R43/0221—Laser welding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Definitions

  • ultrasonic methods are used to join a copper power connector to a printed circuit board on which temperature-critical components such as capacitors and/or processors are arranged.
  • ultrasonic methods for joining components place high demands on the rigidity of the components to be joined and their surface quality, so that currently only power connectors with a width of up to 2 mm can be joined using an ultrasonic method.
  • soldering methods are known in which a soft solder is applied whose melting point is below the critical temperature of the respective temperature-critical electronic components.
  • the invention presented serves to connect two component layers, of which at least one component layer has a temperature-critical component.
  • the presented invention serves to enable a copper-to-copper connection of a power connector with a 35 pm metallization for supplying semiconductor elements on a printed circuit board.
  • a method for the temperature-critical joining of a first electrically conductive component layer with a first constant material thickness and a second component layer with a second constant material thickness, with at least one electronic component being arranged on the second component layer, the critical temperature of which is below a melting point of the first and the second layer of components.
  • the method comprises an arrangement step for arranging the first component layer over the second component layer without a gap and a movement step for moving a laser beam with constant power along the first component layer with a welding feed, which causes a material forming the first component layer to be melted by an energy input of the laser beam , and that only material in a surface area of the second component layer is melted by the energy input.
  • a critical temperature of a component is to be understood as meaning a temperature at which the component is damaged.
  • a surface area is to be understood as meaning a component layer which is surrounded on one side by a carrier layer, such as a substrate.
  • a surface area is very thin, e.g. 35 pm, thin.
  • a surface area can be made of metal and can be arranged under a protective layer, which can be made of plastic, for example.
  • a surface area can form a conductor layer of a printed circuit board.
  • the method presented provides for a welding feed, i.e. a movement of a laser along a first component layer, which is so fast that energy is introduced by welding limited to a very small weld area.
  • a welding feed i.e. a movement of a laser along a first component layer, which is so fast that energy is introduced by welding limited to a very small weld area.
  • the limitation of the welding area occurs on the one hand in its surface area, ie its cross section on the first component layer, but also in its depth extension in a second component layer arranged under the first component layer.
  • the welding feed provided according to the invention limits an energy input into a second component layer, which is arranged under a first component layer, in such a way that only material in a surface area of the second component layer is melted. This effect can be checked easily, for example by making a section through a material combination produced using the method according to the invention. In this case, however, the energy input is at least so high that the first component layer is continuously melted and energy introduced into the first component layer is passed on to the second component layer.
  • the first component layer becomes the first component layer as a result of the inventively provided melting of the first component layer up to the second component layer continuously melted, so that a melt of the first component layer contacts the second component layer and forms a connection with it. Due to the welding feed provided according to the invention, penetration of the second component layer by the melt is avoided, so that the second component layer is only melted in a surface area and minimal energy is introduced into the second component layer.
  • an energy input into components arranged on the second component layer is also minimized. Accordingly, heating of components arranged on the second component layer when the method according to the invention is carried out remains far below a critical temperature of respective components arranged on the second component layer, so that damage to the components by the method according to the invention is avoided.
  • the welding feed rate is at least 800mm/s.
  • the welding feed rate provided according to the invention is at least 800mm/s, so that a respective localized area of the first and second component layer is only temporarily or briefly thermally stressed and a localized energy input remains minimal or is only so large that the second component layer is melted in its surface area .
  • humping usually already occurs at a welding feed rate of 800mm/s, such a welding feed rate is usually avoided.
  • a welding feed rate 800mm/s
  • humping can be reliably avoided, particularly in the case of small heating areas.
  • part of an energy input that is conducted into the first component layer is transferred to the second Transfer component layer, whereby a meta-stable intermediate state of a melt in the first component layer is generated, which avoids humping and also makes it possible to limit melting of the second component layer to a surface area, in particular to a surface area with a material thickness of 35 pm.
  • a small cross section of an area with which a laser beam provides an energy input into the first component layer and the second component layer leads to the depth of the surface area within which the second component layer is melted being controlled or minimized can be.
  • the area can be any have length.
  • the surface can have a length of more than 2 cm, so that, for example, power connectors with a width greater than 2 cm can be joined, in particular bonded, as the first component layer to a second component layer, such as a printed circuit board.
  • the method presented can be used to provide a welding area that is longer than 2 cm without damaging the respective temperature-critical components.
  • the method provided according to the invention is particularly suitable for joining power connectors made of copper with a material thickness of approximately 100 ⁇ m and a width of more than 2 cm on a circuit board or power electronics with a copper layer of 35 ⁇ m.
  • the first component layer and/or the surface area of the second component layer consists at least partly of aluminum, in particular at least partly of copper and/or aluminum.
  • the component provided according to the invention can be part of power electronics or a semiconductor element, such as a printed circuit board or a control device, or be a battery.
  • the presented invention relates to a joining device for the temperature-critical joining of a first electrically conductive component layer with a first constant material thickness and a second component layer with a second constant material thickness, wherein at least one electronic component is arranged on the second component layer, the critical temperature of which is below a Melting point of the first and the second component layer is.
  • the joining device includes a laser, an actuator and a control unit.
  • the control unit is configured to control the actuator in such a way that the actuator moves the laser with a welding feed over the first component layer, which causes a material forming the first component layer to be partially melted down to the second component layer by an energy input from the laser beam , and that only material in a surface area of the second component layer is melted by the energy input.
  • the joining device according to the invention serves in particular to carry out the method according to the invention.
  • the presented invention relates to a semiconductor element.
  • the semiconductor element comprises a first electrically conductive component layer with a first constant material thickness and a second component layer with a second constant material thickness, the first component layer and the second component layer being connected using a possible configuration of the method presented.
  • first component layer and the second component layer of the semiconductor element according to the invention are connected in such a way that a solidified melt in a connection region of the second component layer projects only into a surface region of the second component layer.
  • the joining of two component layers allows two components to be connected in an electrically conductive manner without the need for a solder is needed.
  • the presented invention enables second copper layers to be melted, so that the copper layers form a connection with one another that is electrically conductive and mechanically stable.
  • Figure 1 shows a schematic representation of a possible embodiment of the method according to the invention
  • FIG. 2 shows a schematic representation of a possible embodiment of the joining device according to the invention
  • FIG. 3 shows a schematic representation of a possible configuration of the semiconductor element according to the invention.
  • FIG. 1 A sequence of a method 100 is shown in FIG. An energy input into a first component layer 103 and a second component layer 105 is provided by means of a laser beam 101, which is set to a power “P”.
  • the laser beam 101 is moved along a surface of the first component layer 103 with a welding feed rate, ie a speed “v”, as indicated by arrow 107 . Accordingly, a melting area 109 is created in the first component layer 103 and the second component layer 105. The melting area 109 extends completely through the first component layer 103 and into a surface area 111 of the second component layer 105. Correspondingly, a support area 113 lying under the surface area 111 becomes the second component layer 105 is not melted.
  • a section-specific energy input E which is introduced into the first component layer 103 and the second component layer 105, results from the ratio of the power of the laser beam 101 and the welding feed.
  • the welding feed rate is selected to be as high or as fast as possible without generating instabilities through so-called "humping".
  • the power of the laser beam is increased until a desired welding depth is reached is reached. The larger the cross-section of a welding area, the more energy has to be provided to reach the required welding depth.
  • the welding feed rate can be selected in such a way that it leads to a metastable intermediate state of a molten slag.
  • this intermediate state there is still no “humping”, ie slag escaping from the melting region 109, but the slag can be set in dynamic motion, which enables energy to be dissipated quickly from the surface area of the second component layer.
  • the laser beam 101 is operated with a power of 1 kW and is moved with a welding feed rate of at least 800 mm/s, as indicated by arrow 107.
  • the welding area 109 with a cross section of 40 ⁇ m is created.
  • the first component layer 103 melts completely and in the second component layer 105 in some areas, only in the surface area 111, which is e.g. 35 ⁇ m high here.
  • the energy transmitted by the laser beam 101 acts only locally in the melting region 109, so that a transmission of energy provided by the laser beam 101 into an area 115 of the first component layer 103 surrounding the melting region 109 and an area surrounding the melting region 109 117 of the second component layer 105 is minimized.
  • a joining device 200 is shown in FIG. 2 .
  • the joining device 200 includes a laser 201, an actuator 203 and a control unit 205.
  • the control unit 205 is configured to control the actuator 203 in such a way that the actuator 203 moves the laser 201 with a welding feed over a first component layer, which causes through an energy input of a laser beam of the laser 201, a material forming the first component layer is partly melted up to a second component layer, and that only material in a surface area of the second component layer is melted by the energy input.
  • control unit 205 is configured to minimize an energy input by the laser 201 into areas of the first component layer and the second component layer surrounding a welding area, by the process parameters welding feed rate, power of the laser and cross-section of the welding area being adjusted to one another, with the welding feed rate being at least is 800mm/s.
  • FIG. 3 shows a semiconductor element 300 that was produced using the method 100 .
  • a power connector 301 which is arranged above a circuit board 303 can be seen here.
  • the power connector 301 and the circuit board 303 are connected via a welding portion 305 .
  • the weld area 305 provides a mechanical and electrically conductive connection between the power connector 301 and the circuit board 303 .
  • the power connector 301 and the printed circuit board 303 are connected without solder.
  • the welding area 305 extends completely through the power connector 301 and into a surface area 307, in this case a copper metallization of the printed circuit board 303.
  • a surface area 307 in this case a copper metallization of the printed circuit board 303.
  • the welding area 305 does not extend into a carrier layer 309 of the printed circuit board 303.
  • the carrier layer 309 can be made of temperature-sensitive material, such as plastic.
  • a gap between the power connector 301 and the copper metallization can arise due to energy provided during the production of the semiconductor element 300, which gap can be caused, for example, by melted plastic of the printed circuit board 303.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Laser Beam Processing (AREA)

Abstract

La présente invention concerne un procédé (100) pour l'assemblage à température critique d'une première couche de composant électriquement conducteur (103, 301) ayant une première épaisseur de matériau constante et d'une seconde couche de composant (105, 303) ayant une seconde épaisseur de matériau constante ; sur la seconde couche de composant (105, 303) est disposé au moins un composant électronique qui a une température critique inférieure à un point de fusion de la première couche de composant (103, 301) et de la seconde couche de composant (105, 303). Le procédé (100) comprend les étapes suivantes consistant à : - agencer la première couche de composant (103, 301) sur la seconde couche de composant (105, 303) sans interstice ; - déplacer un faisceau laser (101) avec une puissance constante le long de la première couche de composant (103, 301) avec une avancée de soudage qui amène un matériau formant la première couche de composant (103, 301) à fondre partiellement jusqu'à la seconde couche de composant (105, 303) au moyen d'une entrée d'énergie du faisceau laser (101) et qui amène uniquement un matériau dans une région de surface (111, 307) de la seconde couche de composant (105, 303) à être fondu au moyen de l'entrée d'énergie.
EP21749631.4A 2020-08-12 2021-07-27 Procédé et dispositif d'assemblage à température critique de deux couches de composant Pending EP4196314A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020210201.5A DE102020210201A1 (de) 2020-08-12 2020-08-12 Verfahren und Vorrichtung zum temperaturkritischen Fügen zweier Bauteilschichten
PCT/EP2021/071035 WO2022033869A1 (fr) 2020-08-12 2021-07-27 Procédé et dispositif d'assemblage à température critique de deux couches de composant

Publications (1)

Publication Number Publication Date
EP4196314A1 true EP4196314A1 (fr) 2023-06-21

Family

ID=77180035

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21749631.4A Pending EP4196314A1 (fr) 2020-08-12 2021-07-27 Procédé et dispositif d'assemblage à température critique de deux couches de composant

Country Status (4)

Country Link
EP (1) EP4196314A1 (fr)
CN (1) CN116157226A (fr)
DE (1) DE102020210201A1 (fr)
WO (1) WO2022033869A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2144284A1 (fr) * 2008-07-11 2010-01-13 Siemens Aktiengesellschaft Procédé de fabrication d'un connecteur sur un élément semi-conducteur pour un distributeur d'énergie et composant électronique doté d'un connecteur fabriqué de cette manière sur un composant semi-conducteur
DE102014116283B4 (de) * 2014-11-07 2016-05-19 Webasto SE Verfahren zum Bearbeiten eines ersten Bauelements und eines zweiten Bauelements sowie Vorrichtung
CN115609151A (zh) * 2018-08-30 2023-01-17 罗姆股份有限公司 半导体装置

Also Published As

Publication number Publication date
CN116157226A (zh) 2023-05-23
WO2022033869A1 (fr) 2022-02-17
DE102020210201A1 (de) 2022-02-17

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