EP4111605A1 - Verfahren und fotodiodenvorrichtung zur kohärenten detektion eines optischen signals - Google Patents
Verfahren und fotodiodenvorrichtung zur kohärenten detektion eines optischen signalsInfo
- Publication number
- EP4111605A1 EP4111605A1 EP21712725.7A EP21712725A EP4111605A1 EP 4111605 A1 EP4111605 A1 EP 4111605A1 EP 21712725 A EP21712725 A EP 21712725A EP 4111605 A1 EP4111605 A1 EP 4111605A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- photodiode
- reference signal
- optical signal
- signal
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/67—Optical arrangements in the receiver
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/61—Coherent receivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/61—Coherent receivers
- H04B10/616—Details of the electronic signal processing in coherent optical receivers
Definitions
- the invention relates to a method for the coherent detection of an optical signal according to the preamble of claim 1 and a photodiode device for the coherent detection of an optical signal according to the preamble of claim 16.
- waveguide-integrated photodiodes are usually used, with a homodyne or heterodyne mixing of the optical signal with a reference signal (the local oscillator signal) by means of a directional coupler or an MMI (multimode interference coupler).
- a directional coupler or an MMI multimode interference coupler.
- MMI multimode interference coupler
- the radiation of the optical signal into the photodiode via a first side of the photodiode and the radiation of the reference signal into the photodiode via a second side of the photo diode takes place or vice versa, the reference signal via the first side of the photodiode and the optical signal via the second side in the photodiode are irradiated.
- the optical signal (the optical wave, in particular in the form of the optical beam) and the reference signal (the local oscillator signal, which can also be in the form of an optical beam) are thus radiated into the photodiode via different sides.
- the optical signal and the reference signal are each radiated into the photodiode through one side of the photodiode.
- the optical signal through a substrate or a lower layer (in particular in the form of a semiconductor layer, e.g. a contact layer) of the photodiode and the reference signal through an upper layer (in particular in the form of a semiconductor layer; e.g. a contact layer) of the photodiode in the photodiode are irradiated.
- the reference signal is radiated into the photodiode through a substrate or a lower layer of the photodiode and the optical signal through an upper layer.
- the reference signal is a local oscillator signal.
- the optical signal can have a data signal applied to it and / or have other characteristics (in particular an amplitude, frequency and / or phase curve) that are not present in the reference signal.
- the method according to the invention also includes, in particular, a coherent (homodyne or heterodyne) detection of the optical signal using a signal caused by the interference of the optical signal generated with the reference signal and registered by the photodiode interferential signal; in particular using an electrical photodiode signal which the photodiode generates upon receipt of the interference signal.
- the signals are radiated in without the use of a beam splitter.
- the optical signal and the reference signal are radiated into the photo diode at least essentially collinearly.
- the vertically illuminable photodiode is designed in such a way that the optical signal to be detected is radiated vertically, i. H. in particular perpendicular to a substrate of the photodiode.
- the first side faces away from the second side of the photodiode in particular, the two sides, for example, running at least approximately parallel to one another. It is possible that the first side represents an underside of the photodiode and is formed, for example, by the substrate already mentioned or a semiconductor layer (for example a contact layer) of the photodiode arranged on a substrate.
- the second side can form a top side of the photodiode, the top side likewise being able to be formed by one side of a semiconductor layer of the photodiode (example that is also in the form of a contact layer).
- the optical signal and / or the reference signal are irradiated, for example, at an angle relative to the substrate or semiconductor layer.
- the optical signal and / or the reference signal are injected at least approximately perpendicularly to the substrate or the semiconductor layer.
- the optical signal and the reference signal are in particular radiated into the photodiode in such a way that they at least partially overlap in an absorber layer of the photodiode. It is possible that the thickness of the absorber layer is optimized with regard to the detection efficiency of the photodiode.
- the photodiode is in particular a pin diode; for example in the form of an avalanche photodiode (known per se). It is conceivable that the optical signal and the reference signal are superimposed in particular in an absorber layer and / or multiplier layer of the avalanche photodiode.
- the photodiode can in particular be used for homodyne detection in which the wavelengths of the optical signal and the reference signal are at least approximately the same. However, it is also conceivable that the photodiode is used for heterodyne detection, the wavelengths of the optical signal and the reference signal being different.
- the optical signal and the reference signal are generated, for example (in particular in the case of homodyne detection) with the aid of the same optical light source (in particular in the form of a laser).
- the reference signal and / or the optical signal can be radiated in via an adjustable deflection unit, the photodiode registering an interference signal generated by the interference of the optical signal with the reference signal, which is essentially composed of a portion of the optical signal that is collinear Reference signal is incident in the photodiode, depends.
- the adjustable deflection unit it is particularly possible for the reference signal and / or the optical signal to be radiated into the photo diode at a predeterminable angle to one another. In particular, by changing the angle of incidence of the reference signal, the spatial direction of the reference signal can be set to the direction of the optical signal.
- the adjustable deflection unit comprises, for example, a MEMS.
- the reference signal is radiated in diffusely, in particular in order to be able to detect optical signals from different spatial directions.
- the photodiode has, for example, an aperture that is at least 0.5 mm or at least 1 mm. Such a large aperture can result in a strong angular dependence of the interference signal generated by the interference of the optical signal with the reference signal and registered by the photodiode.
- the reference signal for spatial scanning of the optical signal is radiated at different angles relative to the first or second side of the photodiode (e.g. with the help of the adjustable deflection device explained above), an electrical signal of the Photo diode is registered.
- the detector signal with respect to the optical signal is greatest when the reference signal is collinear with the optical signal, so that information about the direction of the optical signal can be determined by changing the angle of incidence of the reference signal and / or the detection of the optical signal is carried out in a directionally selective manner (“beam steering”).
- an interference signal ie a signal that depends on the interference of the optical signals, is registered for each of the angles.
- the optical signal consists of a (for example diverging) beam which covers a certain solid angle range around a central angle of incidence.
- the registered interference signal is primarily (in particular predominantly, at least approximately essentially) dependent on a portion of the optical signal that is collinear with the reference signal and is incident on the photodiode.
- the aperture of the photodiode being selected in such a way that the intensity of the interference signal, normalized to the collinear incidence of the optical signal and the reference signal, of incident, undetectable optical signals Signals from solid angles outside a given solid angle resolution is not greater than 0.1 or greater than 0.05.
- the "solid angle resolution” is a solid angle range from which optical signals are to be detected by means of the photodiode. The orientation of this solid angle range can be changed by changing the direction of the reference signal in order to scan a field of view (a larger solid angle segment).
- the photodiode in particular its aperture
- the photodiode is such that the normalized intensity of the interference signal outside a solid angle range (the “solid angle resolution”) of 0.1 °, 0.5 ° or 1 ° is less than 0.1 or 0.05 .
- an array of photodiodes is provided, the optical signal being radiated into the photodiodes via the first or the second side and the reference signal being radiated via the other side of the photodiodes, each of the photodiodes being radiated by the interference of the optical signal with the Reference signal generated interference signal registered, which mainly depends on a portion of the optical signal that is collinear to the reference signal in the photodiode, depends.
- the array is used to register an optical signal which comprises a beam of rays covering a solid angle range, the detector signal essentially depending on the component of the optical signal (of the beam of rays) that is collinear with the reference signal.
- the at least one optical signal is radiated into the photodiodes in particular with the aid of at least one strahlfor emerging element, for example a (for example concave) lens or a lens array. It is conceivable that the at least one beam-shaping element is designed and arranged in such a way that at least some of the photodiodes receive optical signals from different solid angle ranges.
- the invention also relates to a photodiode device for the coherent detection of at least one optical signal, in particular for carrying out the method according to the invention
- a light irradiation device for irradiating an optical signal and a reference signal into the photodiode in such a way that the two signals at least partially interfere with one another, wherein
- the light emitting device is designed so that the optical signal entering or impinging on the light emitting device is radiated into the photodiode via a first side of the photodiode and the reference signal entering or impinging on the light emitting device is radiated into the photodiode via a second side of the photodiode or vice versa Reference signal takes place on the first side and the radiation of the optical signal on the second side.
- the light irradiation device comprises a first deflection device for deflecting the optical signal or the reference signal and a second deflection device for deflecting the reference signal.
- the first and / or the second deflecting device comprises at least one reflective element (in particular a surface acting as a mirror).
- the first and / or the second deflection device may have a lens or some other diffractive element.
- the photodiode device comprises an adjustable deflection device, as already explained above.
- the light irradiation device can comprise a waveguide for guiding the optical signal, wherein, for example, the first deflection device is formed by an end face of the waveguide.
- the waveguide is an optically integrated waveguide; H. a waveguide which is formed by at least one semiconductor layer arranged on a substrate. It is conceivable that the light-deflecting end face of the optically integrated waveguide is formed by a (in particular angled) cutout in the semiconductor layer and / or the substrate.
- the exemplary embodiments described above in connection with the method according to the invention can of course also be used to develop the photodiode device according to the invention.
- the photodiode device comprises or can be coupled to an evaluation unit to which an electrical photodiode signal can be fed that depends on an interference signal generated by the interference of the optical signal with the reference signal and registered by the photodiode.
- an evaluation unit to which an electrical photodiode signal can be fed that depends on an interference signal generated by the interference of the optical signal with the reference signal and registered by the photodiode.
- a coherent (homodyne or heterodyne) detection of the optical signal takes place with the aid of the evaluation unit.
- the invention also relates to an array with a plurality of photodiodes according to the invention.
- an array can, for example, be used as an imaging sensor; for example in the context of a LIDAR system (such as an FMCW - Frequency Modulated Coherent - LIDAR system).
- the light beam devices of the photo diode devices of the array are designed and arranged in such a way that the photo diodes of several of the photo diode devices can be illuminated with the same reference signal.
- Figure 1 schematically shows a photodiode device for coherent detection according to a first embodiment of the invention
- FIG. 2 shows a photodiode device for coherent detection according to a second exemplary embodiment of the invention.
- FIG. 3 normalized intensity of the interference signal to be detected as a function of the angular difference between the direction of the optical signal and the reference signal.
- the photodiode device 100 for coherent detection of an optical signal OS comprises a photodiode 10.
- the photodiode 10 has several semiconductor layers 2 to 4 arranged one above the other on a substrate 1.
- the lowest layer 2 represents an n-doped contact layer, while the uppermost layer 4 is a p-doped contact layer.
- the absorber layer 3 is located between the two contact layers 2, 4, so that the layers 2 to 4 form a p-i-n junction.
- the n-doped contact layer is arranged above the absorber layer 3 and the p-doped contact layer extends below the absorber layer 3 adjacent to the substrate 1.
- n-contacts 21 are used, while the p-contact layer 4 is contacted via p-contacts 42.
- the photodiode device 100 furthermore comprises a light emitting device (not shown in FIG. 1) with which the optical signal OS to be detected is transmitted via a first side of the photodiode 10, namely via an underside 11 of the substrate 1 (through the underside 11 through), is coupled into the photodiode 10.
- a reference signal in the form of a local oscillator signal LO is also coupled into the photodiode 10 via a second side (through the second side).
- the second side of the photodiode 10 is formed by its top side, ie by an outwardly facing side 41 of the p-contact layer 4.
- the optical signal OS via the top side of the photodiode 10, ie side 41 the layer 4, and the local oscillator signal LO via its underside, ie the side 11 of the substrate 1, is coupled into the photo diode 10.
- the optical signal OS is thus mixed with the local oscillator signal LO in the manner of coherent detection.
- a detector signal photodiode signal
- the coherent detection properties of the optical signal OS can be determined in a manner known per se.
- the photo diode device according to the invention also includes an evaluation unit for evaluating the detector signal. It is also conceivable that, as already explained above, the direction of incidence of the local oscillator signal LO is changed in order to obtain information regarding the direction of the optical signal OS or to carry out the detection in a directionally selective manner.
- FIG. 2 a more specific embodiment of the photodiode device 100 according to the invention is shown.
- the photodiode 10 of the photodiode device 100 has, analogously to FIG. 1, an n-doped contact layer (n-contact layer 2) and a p-doped contact layer (p-contact layer 4), between which an absorber layer 3 is located.
- n-contact layer 2 an n-doped contact layer
- p-contact layer 4 p-doped contact layer
- the light irradiation device 20 of the photodiode device 100 comprises an optically integrated waveguide 210 formed by semiconductor layers 211 arranged on the substrate 1, into which the optical signal OS to be detected is coupled.
- a recess 212 extends through the semiconductor layers 211 of the waveguide 210 (and for example also through the n-contact layer 2).
- the recess 212 extends at an angle to the substrate 1 (for example at 45 °) and the waveguide 210, so that the waveguide 210 has an end surface 213 which adjoins the recess 212 and extends at this angle.
- This end surface 213 forms a first deflecting device in the form of a deflecting surface which deflects the optical signal OS light guided in the waveguide 210 towards the photodiode 10 by an angle (in the present case 90 °) dependent on the course of the recess 212.
- the optical signal OS thus again enters the photodiode 10 via an underside of the photodiode 10, which in this case is formed by an underside 22 of the n-contact layer 2.
- the light irradiation device 20 comprises a second deflection device in the form of a (for example cylindrical) lens 220.
- the lens 220 is arranged such that the local oscillator signal LO radiated into it in the direction of the top of the photo diode 10, ie the top 41 of the p-contact layer 4, is deflected and is coupled into the photodiode 10 via the side 41 of the p-contact layer 4.
- the optical signal OS and the local oscillator signal LO are superimposed in the absorber layer 3. It is also conceivable here that the direction of irradiation of the local oscillator signal LO is varied to accommodate the optical signal OS spatially scanned.
- the optical signal OS and the local oscillator signal LO can of course also be interchanged; H. the local oscillator signal LO could be coupled into the photodiode 10 via the waveguide 210 and the optical signal OS via the lens 220.
- an avalanche photodiode could also be used which, in addition to the absorber layer, contains, inter alia, a multiplier layer. It is also possible for several of the photodiode devices 100 of FIGS. 1 and 2 to be connected to form an array in order to implement an imaging sensor, for example.
- Figure 3 shows the normalized intensity (relative to a collinear incidence of the optical signal and the reference signal) of the interference signal to be detected as a function of the angle difference ("relative propagation angle") between the direction of the optical signal and the direction of the reference signal for different apertures of the photodiode or a lens upstream of the photodiode.
- the intensity of the interference signal decreases as the angle difference increases, with the intensity profile falling off the steepest for the smallest aperture (10 pm).
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102020105353.3A DE102020105353A1 (de) | 2020-02-28 | 2020-02-28 | Verfahren und Fotodiodenvorrichtung zur kohärenten Detektion eines optischen Signals |
| PCT/EP2021/054822 WO2021170798A1 (de) | 2020-02-28 | 2021-02-26 | Verfahren und fotodiodenvorrichtung zur kohärenten detektion eines optischen signals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP4111605A1 true EP4111605A1 (de) | 2023-01-04 |
Family
ID=74947341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP21712725.7A Pending EP4111605A1 (de) | 2020-02-28 | 2021-02-26 | Verfahren und fotodiodenvorrichtung zur kohärenten detektion eines optischen signals |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12176958B2 (de) |
| EP (1) | EP4111605A1 (de) |
| DE (1) | DE102020105353A1 (de) |
| WO (1) | WO2021170798A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102021132010A1 (de) * | 2021-12-06 | 2023-06-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und lidar-system |
| DE102022101149A1 (de) | 2022-01-19 | 2023-07-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Detektor, lidar modul und verfahren zum betrieb eines lidar moduls |
| DE102022133586A1 (de) | 2022-12-16 | 2024-06-27 | Ams-Osram International Gmbh | Optische messvorrichtung und verfahren |
| EP4431975A1 (de) * | 2023-03-15 | 2024-09-18 | Sick Ag | Optoelektronischer sensor |
| DE102023106439A1 (de) * | 2023-03-15 | 2024-09-19 | Sick Ag | Optoelektronischer Sensor |
| EP4657110A1 (de) * | 2024-05-28 | 2025-12-03 | Imec VZW | Einheitszelle, system und verfahren zur detektion von licht aus einem ziel |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19838519A1 (de) * | 1998-08-25 | 2000-03-02 | Bosch Gmbh Robert | Leiterplatte und Verfahren zur Herstellung |
| US7045833B2 (en) | 2000-09-29 | 2006-05-16 | Board Of Regents, The University Of Texas System | Avalanche photodiodes with an impact-ionization-engineered multiplication region |
| JP2005020175A (ja) * | 2003-06-24 | 2005-01-20 | Olympus Corp | 光検出装置及び光学システム |
| JP4678653B2 (ja) * | 2006-05-09 | 2011-04-27 | 富士通株式会社 | 光送信装置 |
| JP4641981B2 (ja) * | 2006-07-21 | 2011-03-02 | 富士フイルム株式会社 | 光記録方法及び光記録装置、並びに、光記録媒体、光再生方法及び光再生装置 |
| US7999342B2 (en) | 2007-09-24 | 2011-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Image sensor element for backside-illuminated sensor |
| US7781736B2 (en) * | 2008-05-19 | 2010-08-24 | Emcore Corporation | Terahertz frequency domain spectrometer with controllable phase shift |
| US20120269514A1 (en) * | 2011-04-25 | 2012-10-25 | Fujitsu Limited | High Speed IO with Coherent Detection |
| KR102276913B1 (ko) | 2014-08-12 | 2021-07-13 | 삼성전자주식회사 | 광 다이오드를 가지는 광전 변환 소자 및 광 신호 수신 유닛 |
| JP6920110B2 (ja) | 2017-06-13 | 2021-08-18 | ルネサスエレクトロニクス株式会社 | 固体撮像素子およびその製造方法 |
| US10830638B2 (en) * | 2018-06-22 | 2020-11-10 | Ciena Corporation | Photodetector circuit with improved saturation current and integrated optical filtering |
-
2020
- 2020-02-28 DE DE102020105353.3A patent/DE102020105353A1/de active Pending
-
2021
- 2021-02-26 EP EP21712725.7A patent/EP4111605A1/de active Pending
- 2021-02-26 WO PCT/EP2021/054822 patent/WO2021170798A1/de not_active Ceased
- 2021-02-26 US US17/802,731 patent/US12176958B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021170798A1 (de) | 2021-09-02 |
| US12176958B2 (en) | 2024-12-24 |
| DE102020105353A1 (de) | 2021-09-02 |
| US20230080233A1 (en) | 2023-03-16 |
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