EP4081671A4 - Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions - Google Patents
Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions Download PDFInfo
- Publication number
- EP4081671A4 EP4081671A4 EP20964203.2A EP20964203A EP4081671A4 EP 4081671 A4 EP4081671 A4 EP 4081671A4 EP 20964203 A EP20964203 A EP 20964203A EP 4081671 A4 EP4081671 A4 EP 4081671A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- sources
- deposition
- help
- thin films
- optical thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 150000002500 ions Chemical class 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CZ2020/000053 WO2022117130A1 (en) | 2020-12-03 | 2020-12-03 | Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4081671A1 EP4081671A1 (en) | 2022-11-02 |
EP4081671A4 true EP4081671A4 (en) | 2023-09-27 |
Family
ID=81852799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20964203.2A Pending EP4081671A4 (en) | 2020-12-03 | 2020-12-03 | Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP4081671A4 (en) |
WO (1) | WO2022117130A1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CZ304493B6 (en) * | 2011-12-28 | 2014-05-28 | Fyzikální ústav AV ČR, v.v.i. | Method of measuring ionic distribution function in a low-temperature plasma, measuring system for making the method and a probe for such measuring system |
WO2015134108A1 (en) * | 2014-03-04 | 2015-09-11 | White Nicholas R | Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition |
CZ29907U1 (en) * | 2016-07-27 | 2016-10-25 | Univerzita Palackého | Device to form thin deposition layers by means of low-pressure plasma |
CZ33034U1 (en) * | 2019-05-09 | 2019-07-30 | Univerzita Palackého v Olomouci | Device for measuring the mass of ions in low temperature plasma |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6238537B1 (en) | 1998-08-06 | 2001-05-29 | Kaufman & Robinson, Inc. | Ion assisted deposition source |
US6692850B2 (en) | 2001-03-07 | 2004-02-17 | Axsun Technologies, Inc. | Controlled stress optical coatings for membranes |
US7465681B2 (en) | 2006-08-25 | 2008-12-16 | Corning Incorporated | Method for producing smooth, dense optical films |
WO2008136174A1 (en) * | 2007-04-13 | 2008-11-13 | Shinmaywa Industries, Ltd. | Film forming apparatus |
WO2009044473A1 (en) * | 2007-10-04 | 2009-04-09 | Canon Anelva Corporation | High frequency sputtering device |
CA2867451C (en) * | 2013-10-28 | 2021-06-29 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
CZ2016224A3 (en) | 2016-04-18 | 2017-07-12 | Fyzikální ústav AV ČR, v.v.i. | A method of measuring deposition low pressure plasma using wave resonance of electron cyclotron waves and a device for performing this method |
CZ30018U1 (en) | 2016-09-27 | 2016-11-15 | Fyzikální ústav AV ČR, v.v.i. | Device to control deposition of thin layers in vacuum multijet plasma system |
CZ306980B6 (en) | 2016-09-27 | 2017-10-25 | Fyzikální ústav AV ČR, v.v.i. | A method of controlling the rate of deposition of thin layers in a vacuum multi-nozzle plasma system and a device for implementing this method |
CZ2017613A3 (en) | 2017-10-04 | 2018-10-24 | Univerzita Palackého v Olomouci | A method of measuring the impedance of the deposited layer in the discharge plasma using and a device for performing this method |
-
2020
- 2020-12-03 WO PCT/CZ2020/000053 patent/WO2022117130A1/en unknown
- 2020-12-03 EP EP20964203.2A patent/EP4081671A4/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CZ304493B6 (en) * | 2011-12-28 | 2014-05-28 | Fyzikální ústav AV ČR, v.v.i. | Method of measuring ionic distribution function in a low-temperature plasma, measuring system for making the method and a probe for such measuring system |
WO2015134108A1 (en) * | 2014-03-04 | 2015-09-11 | White Nicholas R | Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition |
CZ29907U1 (en) * | 2016-07-27 | 2016-10-25 | Univerzita Palackého | Device to form thin deposition layers by means of low-pressure plasma |
CZ33034U1 (en) * | 2019-05-09 | 2019-07-30 | Univerzita Palackého v Olomouci | Device for measuring the mass of ions in low temperature plasma |
Non-Patent Citations (3)
Title |
---|
HAJIHOSEINI HAMIDREZA ET AL: "The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge", PLASMA, vol. 2, no. 2, 13 May 2019 (2019-05-13), pages 201 - 221, XP093075106, DOI: 10.3390/plasma2020015 * |
See also references of WO2022117130A1 * |
STRANAK VITEZSLAV ET AL: "Investigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 115, no. 15, 21 April 2014 (2014-04-21), XP012184667, ISSN: 0021-8979, [retrieved on 19010101], DOI: 10.1063/1.4871635 * |
Also Published As
Publication number | Publication date |
---|---|
WO2022117130A1 (en) | 2022-06-09 |
EP4081671A1 (en) | 2022-11-02 |
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