EP4081671A4 - Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions - Google Patents

Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions Download PDF

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Publication number
EP4081671A4
EP4081671A4 EP20964203.2A EP20964203A EP4081671A4 EP 4081671 A4 EP4081671 A4 EP 4081671A4 EP 20964203 A EP20964203 A EP 20964203A EP 4081671 A4 EP4081671 A4 EP 4081671A4
Authority
EP
European Patent Office
Prior art keywords
sources
deposition
help
thin films
optical thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20964203.2A
Other languages
German (de)
French (fr)
Other versions
EP4081671A1 (en
Inventor
Zdenek HUBICKA
Vítezslav STRANÁK
Martin CADA
JiRí OLEJNÍCEK
Miroslav Hrabovský
Petr Schovánek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Univerzita Palackeho V Olomouci
Original Assignee
Univerzita Palackeho V Olomouci
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univerzita Palackeho V Olomouci filed Critical Univerzita Palackeho V Olomouci
Publication of EP4081671A1 publication Critical patent/EP4081671A1/en
Publication of EP4081671A4 publication Critical patent/EP4081671A4/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
EP20964203.2A 2020-12-03 2020-12-03 Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions Pending EP4081671A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CZ2020/000053 WO2022117130A1 (en) 2020-12-03 2020-12-03 Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions

Publications (2)

Publication Number Publication Date
EP4081671A1 EP4081671A1 (en) 2022-11-02
EP4081671A4 true EP4081671A4 (en) 2023-09-27

Family

ID=81852799

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20964203.2A Pending EP4081671A4 (en) 2020-12-03 2020-12-03 Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions

Country Status (2)

Country Link
EP (1) EP4081671A4 (en)
WO (1) WO2022117130A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ304493B6 (en) * 2011-12-28 2014-05-28 Fyzikální ústav AV ČR, v.v.i. Method of measuring ionic distribution function in a low-temperature plasma, measuring system for making the method and a probe for such measuring system
WO2015134108A1 (en) * 2014-03-04 2015-09-11 White Nicholas R Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition
CZ29907U1 (en) * 2016-07-27 2016-10-25 Univerzita Palackého Device to form thin deposition layers by means of low-pressure plasma
CZ33034U1 (en) * 2019-05-09 2019-07-30 Univerzita Palackého v Olomouci Device for measuring the mass of ions in low temperature plasma

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238537B1 (en) 1998-08-06 2001-05-29 Kaufman & Robinson, Inc. Ion assisted deposition source
US6692850B2 (en) 2001-03-07 2004-02-17 Axsun Technologies, Inc. Controlled stress optical coatings for membranes
US7465681B2 (en) 2006-08-25 2008-12-16 Corning Incorporated Method for producing smooth, dense optical films
WO2008136174A1 (en) * 2007-04-13 2008-11-13 Shinmaywa Industries, Ltd. Film forming apparatus
WO2009044473A1 (en) * 2007-10-04 2009-04-09 Canon Anelva Corporation High frequency sputtering device
CA2867451C (en) * 2013-10-28 2021-06-29 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
CZ2016224A3 (en) 2016-04-18 2017-07-12 Fyzikální ústav AV ČR, v.v.i. A method of measuring deposition low pressure plasma using wave resonance of electron cyclotron waves and a device for performing this method
CZ30018U1 (en) 2016-09-27 2016-11-15 Fyzikální ústav AV ČR, v.v.i. Device to control deposition of thin layers in vacuum multijet plasma system
CZ306980B6 (en) 2016-09-27 2017-10-25 Fyzikální ústav AV ČR, v.v.i. A method of controlling the rate of deposition of thin layers in a vacuum multi-nozzle plasma system and a device for implementing this method
CZ2017613A3 (en) 2017-10-04 2018-10-24 Univerzita Palackého v Olomouci A method of measuring the impedance of the deposited layer in the discharge plasma using and a device for performing this method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ304493B6 (en) * 2011-12-28 2014-05-28 Fyzikální ústav AV ČR, v.v.i. Method of measuring ionic distribution function in a low-temperature plasma, measuring system for making the method and a probe for such measuring system
WO2015134108A1 (en) * 2014-03-04 2015-09-11 White Nicholas R Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition
CZ29907U1 (en) * 2016-07-27 2016-10-25 Univerzita Palackého Device to form thin deposition layers by means of low-pressure plasma
CZ33034U1 (en) * 2019-05-09 2019-07-30 Univerzita Palackého v Olomouci Device for measuring the mass of ions in low temperature plasma

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HAJIHOSEINI HAMIDREZA ET AL: "The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge", PLASMA, vol. 2, no. 2, 13 May 2019 (2019-05-13), pages 201 - 221, XP093075106, DOI: 10.3390/plasma2020015 *
See also references of WO2022117130A1 *
STRANAK VITEZSLAV ET AL: "Investigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 115, no. 15, 21 April 2014 (2014-04-21), XP012184667, ISSN: 0021-8979, [retrieved on 19010101], DOI: 10.1063/1.4871635 *

Also Published As

Publication number Publication date
WO2022117130A1 (en) 2022-06-09
EP4081671A1 (en) 2022-11-02

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