EP4071945A4 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
EP4071945A4
EP4071945A4 EP20913120.0A EP20913120A EP4071945A4 EP 4071945 A4 EP4071945 A4 EP 4071945A4 EP 20913120 A EP20913120 A EP 20913120A EP 4071945 A4 EP4071945 A4 EP 4071945A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20913120.0A
Other languages
German (de)
French (fr)
Other versions
EP4071945A1 (en
EP4071945B1 (en
Inventor
Kouki Yamamoto
Shinichi Akiyoshi
Masatoshi Tanioku
Haruhisa Takata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of EP4071945A1 publication Critical patent/EP4071945A1/en
Publication of EP4071945A4 publication Critical patent/EP4071945A4/en
Application granted granted Critical
Publication of EP4071945B1 publication Critical patent/EP4071945B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481Constructional features, e.g. arrangements of optical elements
    • G01S7/4814Constructional features, e.g. arrangements of optical elements of transmitters alone
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483Details of pulse systems
    • G01S7/484Transmitters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0236Fixing laser chips on mounts using an adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07351Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/381Auxiliary members
    • H10W72/387Flow barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/879Bump connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/725Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a laterally-adjacent insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/759Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent discrete passive device

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Moving Of The Head To Find And Align With The Track (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Led Devices (AREA)
EP20913120.0A 2020-01-13 2020-12-28 Semiconductor device Active EP4071945B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062960581P 2020-01-13 2020-01-13
PCT/JP2020/049117 WO2021145217A1 (en) 2020-01-13 2020-12-28 Semiconductor device

Publications (3)

Publication Number Publication Date
EP4071945A1 EP4071945A1 (en) 2022-10-12
EP4071945A4 true EP4071945A4 (en) 2023-09-06
EP4071945B1 EP4071945B1 (en) 2025-03-26

Family

ID=76863982

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20913120.0A Active EP4071945B1 (en) 2020-01-13 2020-12-28 Semiconductor device

Country Status (6)

Country Link
US (1) US20220337029A1 (en)
EP (1) EP4071945B1 (en)
JP (1) JP7082721B2 (en)
CN (1) CN114982078B (en)
TW (1) TWI784382B (en)
WO (1) WO2021145217A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114981680B (en) * 2020-01-07 2025-05-16 艾尔默斯半导体欧洲股份公司 Optical module and LiDAR device having at least one such optical module
JP7292241B2 (en) * 2020-06-23 2023-06-16 株式会社東芝 Semiconductor device and its manufacturing method
TWI800381B (en) * 2022-05-19 2023-04-21 璦司柏電子股份有限公司 Flip chip power transistor module with built-in gate driver chip
DE102023112751A1 (en) * 2023-05-15 2024-11-21 Ams-Osram International Gmbh INTEGRATED COMPONENT PACKAGE WITH A LASER PACKAGE ARRANGED ON A SEMICONDUCTOR CHIP
CN118368510B (en) * 2024-06-14 2024-10-18 宁波舜宇光电信息有限公司 A depth information camera module and 3D sensing device

Citations (4)

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US20040032888A1 (en) * 2000-08-22 2004-02-19 Christian Ferstl Laser module comprising a drive circuit
US20180278017A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Circuit and method for driving a laser diode
WO2018188910A1 (en) * 2017-04-13 2018-10-18 Osram Opto Semiconductors Gmbh Semiconductor radiation source
WO2019202874A1 (en) * 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 Semiconductor laser drive device and method for manufacturing same

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US6392290B1 (en) * 2000-04-07 2002-05-21 Siliconix Incorporated Vertical structure for semiconductor wafer-level chip scale packages
JP2002232062A (en) * 2001-02-02 2002-08-16 Ricoh Co Ltd Optoelectronic integrated device
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JP5092431B2 (en) * 2006-02-03 2012-12-05 株式会社デンソー Semiconductor device
JP4856465B2 (en) * 2006-04-19 2012-01-18 日本オプネクスト株式会社 Optical semiconductor element mounting substrate and optical transmission module
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US7910992B2 (en) * 2008-07-15 2011-03-22 Maxim Integrated Products, Inc. Vertical MOSFET with through-body via for gate
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040032888A1 (en) * 2000-08-22 2004-02-19 Christian Ferstl Laser module comprising a drive circuit
US20180278017A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Circuit and method for driving a laser diode
WO2018188910A1 (en) * 2017-04-13 2018-10-18 Osram Opto Semiconductors Gmbh Semiconductor radiation source
WO2019202874A1 (en) * 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 Semiconductor laser drive device and method for manufacturing same

Non-Patent Citations (1)

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Title
See also references of WO2021145217A1 *

Also Published As

Publication number Publication date
TW202141781A (en) 2021-11-01
JP7082721B2 (en) 2022-06-08
EP4071945A1 (en) 2022-10-12
JPWO2021145217A1 (en) 2021-07-22
WO2021145217A1 (en) 2021-07-22
CN114982078B (en) 2023-04-28
EP4071945B1 (en) 2025-03-26
US20220337029A1 (en) 2022-10-20
CN114982078A (en) 2022-08-30
TWI784382B (en) 2022-11-21

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