EP4014261A1 - Capteur sans fil pour photons et/ou substances étrangères ayant un transistor à effet de champ à base de graphène - Google Patents

Capteur sans fil pour photons et/ou substances étrangères ayant un transistor à effet de champ à base de graphène

Info

Publication number
EP4014261A1
EP4014261A1 EP20743046.3A EP20743046A EP4014261A1 EP 4014261 A1 EP4014261 A1 EP 4014261A1 EP 20743046 A EP20743046 A EP 20743046A EP 4014261 A1 EP4014261 A1 EP 4014261A1
Authority
EP
European Patent Office
Prior art keywords
sensor
photons
antenna
foreign substances
graphene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20743046.3A
Other languages
German (de)
English (en)
Inventor
Zhenxing WANG
Andreas HEMMETTER
Hasan Burkay UZLU
Daniel Neumaier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Amo GmbH
Original Assignee
Amo GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amo GmbH filed Critical Amo GmbH
Publication of EP4014261A1 publication Critical patent/EP4014261A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor

Definitions

  • the invention relates to a wirelessly readable sensor. It is used to detect photons incident on its surface and / or foreign substances that have accumulated and / or already accumulated on its surface.
  • the sensor does not have its own power supply.
  • it has a graphene FET built up in layers and on this a surface layer which electrically reacts to photons and / or accumulated foreign substances and forms the surface of the sensor.
  • such sensors are ideal for application to any surface, for example curved surfaces such as skin and the like, in order to detect light or biological signals, for example. They are well suited for healthcare applications.
  • a wirelessly readable sensor for the detection of photons falling on its surface and / or foreign matter accumulating on its surface, the sensor not having its own power supply and i) a graphene FET built up in layers with a) a metallic gate Electrode which has a gate connection, b) a dielectric barrier located above it and c) a graphene layer located above it, which is connected to a source contact and a drain contact, the source contact being connected to the gate connection is, ii) a first antenna, which is connected to at least one of the source contact and drain contact, and iii) a surface layer located above and on the graphene layer, electrically responsive to photons and / or accumulated foreign matter, which forms the surface, having.
  • the object is also achieved by an arrangement with a wirelessly readable sensor, which is in particular a sensor of the type described in the previous paragraph, the arrangement also having a transmitter that emits a signal on a transmission frequency, and a receiver, which receiver has at least one The receiving frequency is a multiple of the transmitting frequency, the receiver has evaluation electronics, and the sensor i) at least one graphene layer connected to a source contact and a drain contact, ii) a first antenna connected to at least one is connected by sou ree contact and drain contact and iii) a surface layer, in particular an ionic liquid, located on the graphene layer.
  • This sensor can be easily manufactured, for example, using thin-film technology. It is extremely light and, for example, when it is attached to a person's skin, it is practically not annoying, like a normal plaster.
  • Photons are preferably understood to mean photons in the visible spectral range, in the near UV and in the infrared range.
  • Foreign substances are typically atoms or molecules. In particular, they reach the surface by themselves, without solvents or the like. For example, it can be micro-dust, fine dust, gas.
  • the foreign substances can also enter into chemical reactions with the surface layer or with another partner. They are preferably adsorbed, that is to say kept on the surface via so-called van der Waals forces.
  • the foreign substances can be chemoactive and / or bioactive.
  • cleaning methods or means are provided in order to detach the foreign matter from the surface layer again after accumulation has taken place.
  • one or more photoactive layers in particular quantum dots, J-aggregates and / or chalcogenides such as HgS (cinnabar), CdS (cadmium yellow), CdSe and especially transition metal dichalcogenides, are used for the surface layer.
  • the graphene layer can be used as the surface layer, in particular a top layer of the multilayer graphene layer.
  • the surface layer can also be formed by modified or functionalized graphene.
  • the graphene layer preferably has dimensions in the range from 1 ⁇ 1 to 15 ⁇ 15 mm, for example approximately 10 ⁇ 10 mm.
  • the area of the barrier is preferably between 1 mm 2 and 400 mm 2 , preferably in the range below 120 mm 2 .
  • the source and drain contacts are preferably made of metal, for example Au. They are usually on top of the dielectric barrier.
  • the material of the barrier can be an insulator or a semiconductor. For example, SiO 2, Al 2 O 3, hBN, SiN, MoS 2 or the like are possible.
  • the FET is based on a two-dimensional channel on the graphene layer and the electrically responsive surface layer.
  • the at least one antenna is preferably made of metal. Slot-ring resonators, for example, with the graphene FET located in the slot, and antenna shapes such as rod antenna or bow-tie antenna come into consideration.
  • the connection between the source contact and the gate connection has, if possible, no ohmic resistance and no inductance.
  • This change is particularly noticeable in the high-frequency response of the sensor, since an incident, e.g. sinusoidal wave from the transmitter hits a non-constant impedance and is thus distorted, i.e. harmonic frequencies are generated and output by the sensor as a response, i.e. via the at least radiated an antenna.
  • the sensor is excited by the transmitter and emits the excitation energy it receives immediately, with practically no time delay, by emitting different frequencies, including harmonics of the transmission frequency.
  • the harmonic frequencies eg the first harmonic, i.e. double the frequency, or other harmonics
  • information about the lighting status can be obtained and the lighting can thus be measured.
  • the amplitude of the harmonics increases with increasing lighting. In general, as the lighting increases, the amplitude of a increases higher harmonics than the amplitude of a lower harmonic.
  • the evaluation takes place in the evaluation electronics. At least one amplitude is recorded there.
  • the amplitudes of a harmonic frequency, but also the amplitudes at several frequencies, can be recorded, evaluated individually and / or related to one another.
  • the receiver Since the receiver is usually not sufficiently selective that it completely suppresses the signal of the transmission frequency, the influence of the transmission signal can be recorded in a zero measurement, i.e. before the incidence of light or the accumulation of foreign substances. This is then preferably worked in relation to the zero measurement, that is to say the signal of the zero measurement is subtracted in each case in a subsequent measurement.
  • the graphene FET is coupled to one or two antennas. These are designed for a predetermined frequency, that is, preferably selectively.
  • a wave with the frequency fl is sent by the transmitter, received by the sensor and re-emitted as a distorted wave with a proportion of the harmonics.
  • the antennas are optimized for 2.5 GHz and 5 GHz, as these are typical frequencies in a mobile phone.
  • An upper layer of the graphene layer can be used as the surface layer for the detection of accumulating and / or accumulated (adsorbed) foreign substances.
  • the graphene layer is multilayered.
  • the surface layer can also be formed by modified or functionalized graphene.
  • the surface layers specified for the absorption of photons can also be used.
  • Linker biomolecules can also be used as a surface layer.
  • Foreign substances are typically atoms or molecules. In particular, they reach the surface by themselves, without solvents or the like. For example, it can be micro-dust, fine dust.
  • the foreign substances can also enter into chemical reactions with the surface layer or with another partner. They are preferably adsorbed, i.e. kept on the surface by means of so-called van der Waals forces.
  • the foreign substances can be chemoactive and / or bioactive.
  • cleaning methods or means are provided in order to detach the foreign matter from the surface layer again after accumulation has taken place.
  • gas molecules or neural signals can be recorded.
  • One application is in the field of direct detection of in vivo electrical signals, another application is in the field of implemented biosensors that use chemically bound linker molecules that increase the selectivity of specific biomolecules.
  • a molecule to be detected docks or binds to the linker, it transfers a charge into the graphene layer or induces an electric field in it, so that the charge distribution in the graphene layer is influenced.
  • Figure 2 a diagram of a transfer characteristic of the sensor without light (left), with low light (middle) and with stronger light (right),
  • FIG. 4 a representation like FIG. 1, but now with a liquid as the gate
  • FIG. 1 shows a graphene FET with an additional surface layer 20, as is also found in this form from the publication Nat. Nanotechnol, 7, 2012, 363, see there Figure la, can be seen, in which the surface layer 20 is formed by quantum dots.
  • the sensor according to the invention is not limited to such a surface layer 20; it can also have a surface layer 20 in a different configuration.
  • the graphene FET has, in this order, a metallic gate electrode 22, which has a gate connection 24, a dielectric barrier 26 located above it and a graphene layer 28 located above it again.
  • the latter is on the one hand with a source contact 30 and on the other with a Drain contact 32 connected, the source contact 30 being connected to the gate terminal 24.
  • the surface layer 20 is located directly on and above the graphene layer 28. It is made of any photoactive material and / or material that reacts electrically to the accumulation of foreign substances.
  • the gate electrode 22 is typically made of Al, Ti or Au, it can also be made of a ferromagnetic metal (Fe, Ni, Co). The thickness is in the range from 1 nm to a few millimeters, e.g. 3 mm. It is chosen as required.
  • the gate electrode 22 can be located above a substrate (not shown), which is in the form of a thin plastic film 44, for example. This advantageously has a coating with adhesive on an underside.
  • the sensor also has two antennas, namely a first antenna 34 and a second antenna 36. They are designed for different frequencies f, for example the first antenna 34 for fl and the second antenna 36 for 2fl. They are preferably selective for their frequency.
  • a portion of the first antenna 34 and a portion of the second antenna 36 are connected to the source contact 30. Two sections are also connected to the drain contact 36.
  • the actual design of the two antennas 34, 36 is shown in FIG. 3. As is known, the assignment of source and drain is interchangeable.
  • the antennas 34, 36 are made with a thickness and made of a material as indicated above for the gate electrode 22.
  • the FET channel runs in the plane of the drawing.
  • the sensor can be encapsulated, for example a protective film can cover the top and be tightly connected to the already mentioned thin plastic film 44. Pay attention to the transparency of the protective film, this in the case of a sensor for photons. In the case of a sensor for deposits, it is advantageous to leave the surface layer 20 free. In the case of a sensor for photons, it is also possible to arrange the surface layer 20 between the barrier 26 and the graphene layer 28.
  • a transmitter TX and a receiver RX are assigned to the sensor. They are both preferably in the immediate vicinity of the sensor. Since the signal strength is known to decrease with the square of the distance, it is advantageous in particular to arrange the receiver RX as close as possible, for example in the area of less than 100 cm, in particular less than 30 cm, to the sensor.
  • the receiver RX has evaluation electronics 38.
  • a channel is formed in the receiver RX for each reception frequency and, if possible, also for the transmission frequency.
  • the signal strengths, in particular the time-averaged amplitude of the reception frequency, are determined for each channel.
  • FIG. 2 shows a transfer characteristic of the sensor according to FIG. 1, as it can be measured, for example, in a circuit arrangement as described in Nat. Nanotechnol, 7, 2012, 363, Figure la, can be seen.
  • V in volts is the virtual gate voltage; in the above-mentioned figure la it is denoted by VBG.
  • I in amperes, for example mA is the current through the FET, denoted by IDS in FIG.
  • V is changed, the curves shown result, each with a shape similar to a parabola.
  • the curve 2 is dashed shown, it applies to the case of a lower exposure to photons.
  • the curve 3, the; which is shown shows the case for intensive irradiation.
  • a voltage change introduced via the transmitter TX encounters an increasingly steeper and more asymmetrical characteristic; with increasing exposure, this increasingly leads to more distortions, in particular stronger and more harmonics, which are emitted by the sensor as electromagnetic waves.
  • FIG. 3 shows a practical example of an arrangement with the sensor. It is located on a foil 44 which is oval in this example. In particular, the design of the two antennas 34, 36 can be seen. They are designed as slot ring resonators. The graphene FET 42 is located in the slot in approximately the middle of the foil 44.
  • FIG. 4 shows an arrangement with a sensor which is able to measure voltages which, for example, are generated by biological cells.
  • this sensor is modified as follows:
  • the gate electrode 24 and the barrier 26, that is to say the dielectric, are removed. Since these parts do not interfere, they can also be retained, removing them is not absolutely necessary.
  • An electrolytic or ionic liquid is applied as the surface layer 20.
  • the ionic liquid can be, for example, a mixture of polyethylene oxide and lithium perchlorate (PEO: LiCl04), and the electrolytic liquid can be salts dissolved in water.
  • the task of the electrolytic / ionic liquid is to transfer a voltage as an effective gate voltage to the surface of the graphene layer 28.
  • Voltage generated by cells in or on the surface of the electrolytic / ionic liquid lead to a change in the conductivity of the graphene in a manner similar to the illumination of the photoactive layer in the exemplary embodiment according to FIG. 1 and thus change the generation of the harmonic waves.
  • the component is not only suitable for reading out cell voltages, but also all voltages that are generated in or on the surface of the electrolytic / ionic liquid.
  • the invention also relates to a wirelessly readable sensor, the sensor not having its own power supply and i) a graphene FET constructed in layers with a) a metallic gate electrode that has a gate connection, b) a dielectric barrier located above it and c) a graphene layer located above it, which is connected to a Sou ree contact and a drain contact, the source contact being connected to the gate terminal, ii) a first antenna which is connected to at least one of Sou ree - Contact and drain contact is connected, and iii) a sensor element which supplies an electrical voltage in the activated state, one pole of which is connected to the drain contact and the other pole of which is connected to the gate connection.
  • a surface layer 20 may or may not be present on the graphene FET.
  • the charge shift in the graphene FET is achieved by the external sensor element; the graphene FET itself does not have to have a sensor function, rather it only serves as a transmission element for the signal from the external sensor element.
  • the transfer characteristic is used.
  • a photocell or an electrochemical element can be used as an external sensor element. The latter can be obtained, for example, by using two electrodes made of different metals that lie on the skin of a person or are immersed in a liquid.
  • the wirelessly readable sensor for the detection of photons incident on its surface and / or foreign matter that is deposited on its surface does not have its own power supply. It has i) a graphene FET built up in layers with a) a metallic gate electrode which has a gate connection 24, b) a dielectric barrier 26 and c) a graphene layer 28 located above it, which is connected to a source contact 30 and a drain contact 32) is connected, the source contact 30 being connected to the gate terminal 24; ii) a first antenna 34, which is connected to one of the source contact 30 and drain contact 32, and iii) a surface layer 20 located above or below the graphene layer 28, which is electrically responsive to photons and / or deposited foreign matter.

Abstract

L'invention concerne un capteur lisible sans fil pour la détection de photons incidents sur sa surface et/ou de substances étrangères s'accumulant sur sa surface, sans apport d'énergie électrique. Le capteur comporte i) un transistor à effet de champ à base de graphène structuré en couches, ayant a) une électrode de grille métallique, qui a une connexion de grille (24), b) une barrière diélectrique (26) et c) une couche de graphène (28) disposée à son tour, qui est reliée à un contact de source (30) et un contact de drain (32), le contact de source (30) est relié à la connexion de grille (24) ; ii) une première antenne (34), qui est reliée à l'un des contacts de source (30) et le contact de drain (32), et iii) une couche de surface (20) qui est disposée au-dessus ou au-dessous de la couche de graphène (28) et qui réagit électriquement avec des photons et/ou des substances étrangères accumulées.
EP20743046.3A 2019-08-15 2020-07-20 Capteur sans fil pour photons et/ou substances étrangères ayant un transistor à effet de champ à base de graphène Pending EP4014261A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019122007 2019-08-15
PCT/EP2020/070461 WO2021028158A1 (fr) 2019-08-15 2020-07-20 Capteur sans fil pour photons et/ou substances étrangères ayant un transistor à effet de champ à base de graphène

Publications (1)

Publication Number Publication Date
EP4014261A1 true EP4014261A1 (fr) 2022-06-22

Family

ID=71786914

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20743046.3A Pending EP4014261A1 (fr) 2019-08-15 2020-07-20 Capteur sans fil pour photons et/ou substances étrangères ayant un transistor à effet de champ à base de graphène

Country Status (2)

Country Link
EP (1) EP4014261A1 (fr)
WO (1) WO2021028158A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3095473B2 (ja) * 1991-09-25 2000-10-03 株式会社トキメック 被検出装置及び移動体識別システム
US8344358B2 (en) 2010-09-07 2013-01-01 International Business Machines Corporation Graphene transistor with a self-aligned gate
US9680038B2 (en) 2013-03-13 2017-06-13 The Regents Of The University Of Michigan Photodetectors based on double layer heterostructures
CN110068596B (zh) * 2019-04-18 2021-06-08 成都理工大学 基于石墨烯的气体传感及谐波检测一体化器件及检测方法

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WO2021028158A1 (fr) 2021-02-18

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