EP4008021A1 - Semifinished product for populating with components, method for populating same with components, and use of the semifinished product - Google Patents

Semifinished product for populating with components, method for populating same with components, and use of the semifinished product

Info

Publication number
EP4008021A1
EP4008021A1 EP20771481.7A EP20771481A EP4008021A1 EP 4008021 A1 EP4008021 A1 EP 4008021A1 EP 20771481 A EP20771481 A EP 20771481A EP 4008021 A1 EP4008021 A1 EP 4008021A1
Authority
EP
European Patent Office
Prior art keywords
semi
finished product
resin
connection
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20771481.7A
Other languages
German (de)
French (fr)
Inventor
Nora JESKE
Bernd Müller
Christian Schellenberg
Jörg Strogies
Klaus Wilke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP4008021A1 publication Critical patent/EP4008021A1/en
Pending legal-status Critical Current

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    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0635—Acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin

Definitions

  • the invention relates to a semifinished product for component placement or component encapsulation, in particular a placement of a power electronic component that can be produced using a connection technology such as pressure sintering, and the use of the semifinished product in a connection-related process for the placement of semiconductor components.
  • an electrically highly effective insulating encapsulation of the gaps between substrate surfaces and exposed semiconductor components such as chip surfaces is important, as the required insulation through the encapsulation even under unfavorable conditions - in particular, environmental conditions are stable and sufficiently insulating.
  • Electronic assemblies of power electronics with one or more semiconductor components are typically made with the help of connection technology when assembling semiconductor components such as gluing, soldering and / or by pressure sintering on a substrate, for example a ceramic substrate such as a circuit carrier.
  • a substrate for example a ceramic substrate such as a circuit carrier.
  • ceramic circuit carriers are used as substrates, so-called DCB substrates or Direct-Coppper-Bonded substrates.
  • a substrate to be populated with components is fitted with a connecting layer by pressure sintering.
  • pressure sintering the substrate plate and the components are usually connected first and then the module is electrically contacted, but the manufacturing process can also be reversed.
  • multi-stage processes are used in which a connection is first established by pressure sintering in a technologically complex sequential process.
  • the gaps and gaps are sealed using an underfill process.
  • the underfill process is an extra work step that takes time and money.
  • the subject matter of the present invention is a semifinished product for use in equipping a power electronic component through a connection-related process, the semifinished product forming a frame that is suitable for surrounding the application of connection material on a metallized installation location during assembly.
  • the use of a semi-finished product in the construction of a power electronic component by means of connection technology is the subject of the invention.
  • the invention also relates to a method for equipping a substrate with a power electronic component comprising the following method steps:
  • the general knowledge of the invention is that by using a - in particular - pre-assembled semi-finished product, it is possible to simultaneously process electrical connections by, for example, pressure sintering of suitable connecting material and producing an insulating encapsulation by pressing the insulation material in the form of the semi-finished product, if the processing parameters, such as pressure, temperature, the connecting material and the semi-finished product are largely compatible.
  • the synthetic resins from which the semi-finished products are made for example, show superior material properties compared to the underfill materials, such as in particular glass transition temperature, continuous use temperature resistance and the like.
  • the subject matter of the invention is the use of a semifinished product in the assembly and / or encapsulation of a power electronic component.
  • the semifinished product comprises in particular a dielectric and thermosetting resin in a B-state.
  • the shape of the semi-finished product is solid, but it still liquefies when the pressure and / or temperature increase, because the B-stage is a partially cross-linked state of a polymer in which the thermoset properties, i.e. no longer deformable due to the increase in temperature of the resin present in the polymer do not yet dominate.
  • the B-stage resin liquefied by increasing the temperature flows into gaps and / or gaps between the encapsulation produced by soldering and / or pressure sintering or the like and the substrate and / or the surfaces of the components. There, the resin of the semifinished product solidifies thermosetting irreversibly when the temperature increases.
  • the rest of the semifinished product is easily removable - if at all disturbing - and is - for example after the Drucks interung and possibly the prepreg press - removed by wiping, peeling off and / or separating.
  • Semi-finished products within the meaning of the present invention are in particular resin elements in the B-state, which become liquid through pressure increase / heating, but have thermoset properties after curing and crosslinking of the resin, i.e. their shape cannot be changed without being decomposed by heating.
  • Resins for the purposes of the present invention are suitable for producing the semifinished product, in particular thermosets.
  • Polymeric plastics are referred to as thermosetting plastics, which according to the Hardening is no longer deformed and / or can be melted without decomposition. They include hard, amorphous, insoluble polymers.
  • Their preliminary products, so-called pre-polymers, are synthetic resins that can still be melted and therefore liquefied.
  • the semifinished product according to the present invention is such a synthetic resin.
  • a carrier in the form of reinforcing fibers is present in the semifinished product.
  • These can be in the form of scrims, fabrics and / or fiber bundles.
  • Glass fibers, carbon fibers, aramid fibers, ceramic fibers, etc. can be used as reinforcing fibers. These are then preferably embedded in the synthetic resin that forms the matrix.
  • Examples of compounds that form such synthetic resins are epoxy resins, polyurethanes, rubbers - natural, natural and / or vulcanized rubbers -, novolaks, unsaturated polyester resins, any mixtures, copolymers and / or blends of the aforementioned compounds, as well as others known to those skilled in the art - in particular as thermosets known compounds that can be used in the form of corresponding prepolymers.
  • a resin composed of just one compound or a resin composed of a blend and / or copolymer of different compounds can be present in the semi-finished product.
  • one or more fillers and / or one or more additives can be added to the resin or the resin mixture.
  • the semifinished product is prefabricated and adapted to the power electronic component to be equipped and / or encapsulated.
  • degrees of accuracy that are used depending on the application.
  • a semi-finished product that can be used anywhere within certain limits can be prefabricated so that it is suitable for production, but - depending on the application for each component, a precisely fitting semi-finished product can be specially pre-dimensioned. There are no restrictions for this in the context of the present invention.
  • the semifinished product in its size and / or shape, its scope, its (layer) thickness, its surface properties and / or its processability - the criteria mentioned individually or jointly or in any combination - is implemented on the material application of the Connection material, the substrate and / or the component to be encapsulated adapted.
  • the adjustments in shape, shape, angular dimensions, thickness, height, width, length and / or generally the size are called "pre-assembling".
  • a sintered material and / or a solder material and / or an electrically conductive plastic material and / or a conductive adhesive are suitable as connecting material.
  • sintering pastes are silver- and / or copper-based sintering pastes, for example from the manufacturers Alpha or Heraeus, which can be used as pastes and / or also as molded parts.
  • solder connections in particular in the form of alloys, e.g.
  • SnAg3Cu0.5, SnAg3CuO.7, SnCu0.7, SnAg3.5, Sn-58Bi which in turn can be used as pastes and / or as molded parts.
  • the non-flowed resin of the semifinished product remains on the substrate as insulation after pressure sintering.
  • protruding resin of the semifinished product is structured and / or separated after assembly.
  • the protruding semifinished product is pulled off, cut off and / or lasered off after encapsulation has taken place.
  • pre-fabricated semi-finished product frames around the connection material application of the power electronic component placed so that a part of the one or more semi-finished product frames is fluid during printing and penetrates into the gaps and spaces.
  • the still liquid resin is held by example, capillary forces.
  • a pressure sintering press For connection, for example, a pressure sintering press, a device for soldering and / or some other treatment by pressure and / or temperature for the electrically conductive connection of the metallized substrate to the electronic, in particular power electronic, semiconductor component is used.
  • a mechanical servo press for generating mechanical pressure on components to be joined can, for example, be used as a pressure sintering press.
  • the pressure sintering is carried out with the following parameters: Sintering pressures during pressure sintering for example in the range from 10 to 20 MPa, temperatures for example in the range from 230 ° C. to 260 ° C. with sintering times for example in the range from 120 to 240 seconds. These details are only examples and can be present in any combination and completely independently of one another.
  • the soldering is carried out at process temperatures of 150 ° C to 250 ° C, of course depending on the melting point and / or range of the alloy used.
  • the “SAC305®” solder material with 96.5% by weight Sn, 3.0% by weight Ag and 0.5% by weight Cu has a melting point of approx. 217 ° C.
  • the resin as a thermoset, fills the gaps and gaps irreversibly in a dimensionally stable manner.
  • the power electronic component encapsulated by a connection technique such as pressure sintering and / or soldering of a component together with the semifinished product is tempered, that is to say post-cured.
  • Figure 1 shows a plan view of two predefined installation locations with application of connection material, for example application of sintered material,
  • Figure 2 shows the same top view, with a semi-finished frame around each of the two installation spaces
  • FIG. 3 again shows the same top view, one processing step further with the power electronic components and components each applied to the connecting material
  • FIG. 4 again shows, a process step further after pressure sintering, the mounted power electronic components on a substrate.
  • Figure 1 shows two installation locations 1 and 2, which are to be equipped with semiconductor components such as chip, diode, FET field effect transistor, IGBT / Power FET-FC pad configuration, FFC and / or diode pad configuration 1 and 2, respectively.
  • a mounting location for a multipotentially connectable semiconductor component 1 is shown on the left, and a mounting location for a unipotentially connectable semiconductor component 2 is shown on the right.
  • both are located on a substrate, for example a ceramic substrate, each of which has the metallization typical for the installation location.
  • the installation location 1, for example as an IGBT-FC pad configuration shows an electrical pad connection 4 and is therefore electrically connected multipotentially during assembly.
  • To the right of this is an installation location 2 for a semiconductor component such as an FFC or a diode pad configuration, which is unipotentially connected during assembly, ie is electrically contacted.
  • both installation locations 1 and 2 already have an application of electrically conductive connection material 3 in the middle, the installation location 1 to be connected multipotentially also having an application of electrically conductive connection material 3 on connection pad 5.
  • sintered material and / or solder material and / or other electrically conductive plastic material and / or conductive adhesive are suitable as the electrically conductive connecting material 3.
  • FIG. 2 shows the same view of the substrate from above with the installation locations 1 and 2, but here a semifinished product 6 is already placed as a frame around the electrically conductive connecting material 3, for example the sintered material 3. It is particularly easy to see how the - possibly even individually - pre-assembled frame 6 surrounds the sintered material on the connection pad 5 of the installation location 1.
  • This is an example of a semi-finished product 6 pre-assembled on a semiconductor component 1.
  • the semi-finished product 6, which serves as an isolation frame is a prepreg, i.e. a B-stage polymer, particularly advantageously with a fiber reinforcement, for example a glass fiber reinforcement Synthetic resin.
  • the semi-finished product 6 can, for example, be placed in an automated manner and / or with standard equipping devices.
  • standardized is used not only to refer to semiconductor components established as international standards, but also to semiconductor components that are generally mass-produced and suitable semi-finished products and assembly devices.
  • FIG. 3 shows, in a top view from above, the two semiconductor components 7 of the two installation locations 1 and 2, for example dies 7 applied by hot fitting.
  • the component connected by pressure sintering, soldering and / or gluing and encapsulated by melting the semi-finished product is re-tempered for complete curing of the Resin or the electrically conductive sintered, soldered and / or glued connection.
  • FIG. 4 shows the layer structure of the populated substrate shown in FIGS. 1 to 3 from a bird's eye view at the location of the installation locations 1 and 2 as a cross-sectional view.
  • Semifinished product layer 6 which laterally frames the structure, represents the resin from semifinished product 6 distributed by pressure sintering in the spaces and / or gaps.
  • Layer 3 shows the solidified by pressure sintering Sintered material 3.
  • the components 7 sit on top of the building sites 1 and 2 that are galvanically connected by sintered material 3 and electrically insulated with resin 6.
  • the invention achieves multiple advantages, in particular such as the process simplification through simultaneous processing, the waiver of a dispensing application process, such as the underfill process with the corresponding efforts and sources of error, the sharp reduction in production times by avoiding slow curing steps and the white Continued use and adoption of known experiences from circuit board production with regard to the material and processing.
  • the invention makes it possible for the first time to produce a sealed, insulating encapsulation in one process step using a connection method such as pressure sintering, for example.
  • a connection method such as pressure sintering, for example.
  • an electrically insulating semi-finished product in the B-state is applied to the electrically conductive connecting material, for example the sintered material, before pressure sintering.
  • the invention is characterized above all by the fact that when assembling semiconducting components in one operation, preferably by printing sintering, is electrically connected and electrically isolated at the same time.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The invention relates to a semifinished product (6) for populating with components, or on which components are encapsulated, more particularly for populating a power electronics component that can be produced by a jointing technique such as pressure sintering, and to the use of the semifinished product (6) in a jointing method for the assembly of semiconductor components. As a result of the invention it is possible, for the first time, to produce a fully sealed, insulating encapsulation in a single process step, by pressure sintering for example. To this end a semifinished product (6) in the B-stage is applied around the sintering material (3) prior to pressure sintering. The invention is characterized above all by the capability to electrically connect and electrically isolate simultaneously in a single operation, preferably by pressure sintering, when assembling semiconducting components (7).

Description

Beschreibung description
Halbzeug zur Bauteilbestückung, Verfahren zur Bauteilbestü ckung und Verwendung des Halbzeugs Semi-finished product for component assembly, method for component assembly and use of the semi-finished product
Die Erfindung betrifft ein Halbzeug bei der Bauteilbestückung respektive eine Bauteil-Verkapselung, insbesondere eine durch eine Verbindungstechnik wie Drucksintern herstellbare Bestü ckung eines leistungselektronischen Bauteils, sowie die Ver wendung des Halbzeugs in einem verbindungstechnischen Verfah ren bei der Bestückung von Halbleiterbauteilen. The invention relates to a semifinished product for component placement or component encapsulation, in particular a placement of a power electronic component that can be produced using a connection technology such as pressure sintering, and the use of the semifinished product in a connection-related process for the placement of semiconductor components.
Für den Einsatz in der Montage von leistungselektronischen Bauteilen, insbesondere der Chipdirektmontage von Halblei tern, ist eine elektrisch hochwirksame isolierende Verkapse lung der Zwischenräume zwischen Substratoberflächen und expo nierten Halbleiterbauteilen wie Chipoberflächen wichtig, da mit die geforderte Isolation durch die Verkapselung auch un ter ungünstigen Bedingungen - insbesondere Umgebungsbedingun gen- stabil und ausreichend isolierend ist. For use in the assembly of power electronic components, especially the direct chip assembly of semiconductors, an electrically highly effective insulating encapsulation of the gaps between substrate surfaces and exposed semiconductor components such as chip surfaces is important, as the required insulation through the encapsulation even under unfavorable conditions - in particular, environmental conditions are stable and sufficiently insulating.
Elektronische Baugruppen der Leistungselektronik mit einem oder mehreren Halbleiterbauteilen werden typischerweise mit Hilfe von verbindungstechnischen Verfahren bei der Bestückung von Halbleiterbauteilen wie Klebungen, Lötungen und/oder durch Drucksintertechnik auf einem Substrat, beispielsweise einem keramischen Substrat, wie einem Schaltungsträger, her gestellt. Insbesondere werden keramische Schaltungsträger als Substrat eingesetzt, so genannte DCB-Substrate oder Direct- Coppper-Bonded Substrate. Electronic assemblies of power electronics with one or more semiconductor components are typically made with the help of connection technology when assembling semiconductor components such as gluing, soldering and / or by pressure sintering on a substrate, for example a ceramic substrate such as a circuit carrier. In particular, ceramic circuit carriers are used as substrates, so-called DCB substrates or Direct-Coppper-Bonded substrates.
Dazu wird beispielsweise ein mit Bauteilen zu bestückendes Substrat mit einer Verbindungsschicht durch Drucksintern mon tiert. Im Fall des Drucksinterns werden in der Regel erst die Substratplatte und die Bauteile verbunden und danach erfolgt das elektrische Kontaktieren des Moduls, der Herstellungspro zess kann aber auch umgekehrt ablaufen. Zur Herstellung einer isolierenden Verkapselung eines leis tungselektronischen Bauteils werden - beispielsweise bei der Drucksintertechnik und/oder der Löttechnik mehrstufige Ver fahren angewendet, bei denen in einem technologisch aufwändi gen sequentiellen Prozess zunächst eine Verbindung durch Drucksintern hergestellt wird. In dem nächsten Arbeitsschritt erfolgt dann durch einen Underfill-Prozess das Abdichten der Zwischenräume und Spalten. Der Underfill-Prozess ist - wie gesagt - ein extra Arbeitsschritt, der Kosten und Zeit braucht. For this purpose, for example, a substrate to be populated with components is fitted with a connecting layer by pressure sintering. In the case of pressure sintering, the substrate plate and the components are usually connected first and then the module is electrically contacted, but the manufacturing process can also be reversed. To produce an insulating encapsulation of a power electronic component - for example in pressure sintering technology and / or soldering technology, multi-stage processes are used in which a connection is first established by pressure sintering in a technologically complex sequential process. In the next step, the gaps and gaps are sealed using an underfill process. As I said, the underfill process is an extra work step that takes time and money.
Trotz dieses aufwändigen Verfahrens gibt es immer noch Prob leme bei der isolierenden Verkapselung der Spalten und/oder Zwischenräume, wenn der Underfill-Prozess die durch Drucksin tern hergestellte Verkapselung nicht komplett versiegelt und/oder ergänzt. Despite this complex process, there are still problems with the insulating encapsulation of the gaps and / or spaces if the underfill process does not completely seal and / or supplement the encapsulation produced by pressure sintering.
Deshalb ist es Aufgabe der Erfindung eine neue Technik zur Herstellung einer wirksam isolierenden Verkapselung zur Ver fügung zu stellen, die die Nachteile des Standes der Technik überwindet und insbesondere das Problem der Versiegelung der Zwischenräume und/oder Spalten beim Bestücken einfach, kos tengünstig und massenfertigungstauglich löst. It is therefore the object of the invention to provide a new technique for producing an effectively insulating encapsulation that overcomes the disadvantages of the prior art and, in particular, solves the problem of sealing the gaps and / or gaps during assembly in a simple, inexpensive and suitable for mass production .
Diese Aufgabe wird durch den Gegenstand der vorliegenden Er findung, wie er durch die Beschreibung, die Figuren und die Ansprüche offenbart ist, gelöst. This object is achieved by the subject matter of the present invention, as disclosed by the description, the figures and the claims.
Dementsprechend ist Gegenstand der vorliegenden Erfindung ein Halbzeug zur Verwendung bei der Bestückung eines leistungs elektronischen Bauteils durch ein verbindungstechnisches Ver fahren, wobei das Halbzeug einen Rahmen bildet, der geeignet ist, den Verbindungsmaterial-Auftrag auf einem metallisierten Einbauplatz während der Bestückung zu umgeben. Außerdem ist die Verwendung eines Halbzeugs beim Aufbau eines leistungselektronischen Bauteils mittels Verbindungstechnik Gegenstand der Erfindung. Accordingly, the subject matter of the present invention is a semifinished product for use in equipping a power electronic component through a connection-related process, the semifinished product forming a frame that is suitable for surrounding the application of connection material on a metallized installation location during assembly. In addition, the use of a semi-finished product in the construction of a power electronic component by means of connection technology is the subject of the invention.
Zudem ist Gegenstand der Erfindung ein Verfahren zur Bestü ckung eines Substrats mit einem leistungselektronischen Bau teil folgende Verfahrensschritte umfassend: The invention also relates to a method for equipping a substrate with a power electronic component comprising the following method steps:
- Bereitstellen zumindest eines Einbauplatzes (1,2) mittels Metallisierung auf einem Substrat - Provision of at least one installation location (1, 2) by means of metallization on a substrate
- Auftrag eines elektrisch leitfähigen Verbindungsmaterials- Application of an electrically conductive connection material
(3) (3)
- Vorkonfektionieren eines Halbzeugs (6) in Form eines Rah mens zur Umrandung des Verbindungsmaterialauftrags (3) auf dem Substrat - Prefabricating a semifinished product (6) in the form of a frame mens to border the connection material application (3) on the substrate
- Platzierung des vorkonfektionierten Halbzeugs (6) auf dem Substrat um das elektrisch leitfähige Verbindungsmaterial (3) herum - Placement of the pre-assembled semi-finished product (6) on the substrate around the electrically conductive connecting material (3)
- Bestückung des Einbauplatzes und des Verbindungsmaterials mit einem Halbleiterbauteil (7) - Equipping the installation location and the connection material with a semiconductor component (7)
- Einbringen des so vorbereiteten Werkstückes in eine Vor richtung zur Durchführung des verbindungstechnischen Ver fahrens, insbesondere in eine Drucksinterpresse, - Introducing the workpiece prepared in this way into a device for carrying out the connection-related process, in particular into a pressure sintering press,
- simultane elektrisch leitende Verbindung des Halbleiter bauteils (7) und Isolierung mit dem Halbzeug (6) auf dem metallisierten Einbauplatz (1,2) des Substrats. - Simultaneous electrically conductive connection of the semiconductor component (7) and insulation with the semi-finished product (6) on the metallized installation location (1,2) of the substrate.
Allgemeine Erkenntnis der Erfindung ist es, dass durch den Einsatz eines - insbesondere - vorkonfektionierten Halbzeugs eine simultane Verarbeitbarkeit von elektrischer Verbindung durch beispielsweise Drucksintern von entsprechend einsetzba- rem Verbindungsmaterial und Herstellen einer isolierenden Verkapselung durch Verpressen des in Form des Halbzeugs vor liegenden Isolationswerkstoffes möglich ist, wenn die Verar beitungsparameter, beispielsweise Druck, Temperatur, des Ver bindungsmaterials und des Halbzeugs weitgehend kompatibel sind. Eine weitere allgemeine Erkenntnis der Erfindung ist es, dass die Kunstharze, aus denen die Halbzeuge beispielsweise ge macht sind, gegenüber den Underfill-Materialien überlegene Materialeigenschaften zeigen, wie insbesondere Glasübergangs temperatur, Dauereinsatztemperatur-Beständigkeit und ähnli ches. The general knowledge of the invention is that by using a - in particular - pre-assembled semi-finished product, it is possible to simultaneously process electrical connections by, for example, pressure sintering of suitable connecting material and producing an insulating encapsulation by pressing the insulation material in the form of the semi-finished product, if the processing parameters, such as pressure, temperature, the connecting material and the semi-finished product are largely compatible. Another general finding of the invention is that the synthetic resins from which the semi-finished products are made, for example, show superior material properties compared to the underfill materials, such as in particular glass transition temperature, continuous use temperature resistance and the like.
Schließlich ist Gegenstand der Erfindung die Verwendung eines Halbzeugs bei der Bestückung und/oder Verkapselung eines leistungselektronischen Bauteils. Finally, the subject matter of the invention is the use of a semifinished product in the assembly and / or encapsulation of a power electronic component.
Das Halbzeug umfasst insbesondere ein dielektrisches und duroplastisches Harz in einem B-Zustand. Im B-Zustand ist die Form des Halbzeugs zwar fest, verflüssigt sich aber noch bei Druck- und/oder Temperaturerhöhung, weil der B-Zustand ein teilvernetzter Zustand eines Polymers ist, in dem die duro plastischen, also durch Temperaturerhöhung nicht mehr ver formbaren Eigenschaften des polymer vorliegenden Harzes noch nicht dominieren. Das durch Temperaturerhöhung verflüssigte Harz im B-Zustand fließt in Zwischenräume und/oder Spalten zwischen der durch Löten und/oder Drucksintern oder ähnliches hersteilgestellten Verkapselung und dem Substrat und/oder die Oberflächen der Bauteile ein. Dort verfestigt sich das Harz des Halbzeugs duroplastisch-irreversibel bei Temperaturerhö hung. Der Rest des Halbzeugs ist - wenn überhaupt störend - leicht entfernbar und wird - beispielsweise nach der Drucks interung und gegebenenfalls der Prepreg-Presse - durch Abwi schen, Abziehen und/oder Abtrennen entfernt. The semifinished product comprises in particular a dielectric and thermosetting resin in a B-state. In the B-stage, the shape of the semi-finished product is solid, but it still liquefies when the pressure and / or temperature increase, because the B-stage is a partially cross-linked state of a polymer in which the thermoset properties, i.e. no longer deformable due to the increase in temperature of the resin present in the polymer do not yet dominate. The B-stage resin liquefied by increasing the temperature flows into gaps and / or gaps between the encapsulation produced by soldering and / or pressure sintering or the like and the substrate and / or the surfaces of the components. There, the resin of the semifinished product solidifies thermosetting irreversibly when the temperature increases. The rest of the semifinished product is easily removable - if at all disturbing - and is - for example after the Drucks interung and possibly the prepreg press - removed by wiping, peeling off and / or separating.
Halbzeug im Sinne der vorliegenden Erfindung sind insbesonde re Harzelemente im B-Zustand, die durch Druckerhö hung/Erwärmung flüssig werden, aber nach erfolgter Durchhär tung und Vernetzung des Harzes duroplastische Eigenschaften haben, also ihre Form durch Erwärmen nicht unzersetzt verän dern können. Semi-finished products within the meaning of the present invention are in particular resin elements in the B-state, which become liquid through pressure increase / heating, but have thermoset properties after curing and crosslinking of the resin, i.e. their shape cannot be changed without being decomposed by heating.
Als Harze im Sinne der vorliegenden Erfindung eignen sich zur Herstellung des Halbzeugs, insbesondere Duroplaste. Als Duro plaste werden polymere Kunststoffe bezeichnet, die nach dem Aushärten nicht mehr verformt und/oder unzersetzt schmelzbar sind. Sie umfassen harte, amorphe unlösliche Polymere. Ihre Vorprodukte, so genannte Pre-Polymere, sind Kunstharze, die noch schmelzbar und daher zu verflüssigen sind. Das Halbzeug gemäß der vorliegenden Erfindung ist ein derartiges Kunst harz. Resins for the purposes of the present invention are suitable for producing the semifinished product, in particular thermosets. Polymeric plastics are referred to as thermosetting plastics, which according to the Hardening is no longer deformed and / or can be melted without decomposition. They include hard, amorphous, insoluble polymers. Their preliminary products, so-called pre-polymers, are synthetic resins that can still be melted and therefore liquefied. The semifinished product according to the present invention is such a synthetic resin.
Nach einer vorteilhaften Ausführungsform liegt im Halbzeug ein Träger in Form von Verstärkungsfasern vor. Diese können als Gelege, Gewebe, und/oder auch als Faserbündel vorliegen. Als Verstärkungsfasern können Glasfasern, Kohlefasern, Ara- midfasern, keramische Fasern etc. eingesetzt werden. Diese liegen dann bevorzugt in dem die Matrix bildenden Kunstharz eingebettet vor. According to an advantageous embodiment, a carrier in the form of reinforcing fibers is present in the semifinished product. These can be in the form of scrims, fabrics and / or fiber bundles. Glass fibers, carbon fibers, aramid fibers, ceramic fibers, etc. can be used as reinforcing fibers. These are then preferably embedded in the synthetic resin that forms the matrix.
Beispiele für Verbindungen, die derartige Kunstharze bilden sind Epoxidharze, Polyurethane, Kautschuke - natürliche, na turidentische und/oder vulkanisierte Kautschuke -, Novolake, ungesättigte Polyesterharze beliebige Mischungen, Copolymere und/oder Blends der vorgenannten Verbindungen, sowie weitere dem Fachmann - insbesondere als Duroplaste in Form von ent sprechenden Pre-Polymeren einsetzbare - bekannte Verbindun gen. Examples of compounds that form such synthetic resins are epoxy resins, polyurethanes, rubbers - natural, natural and / or vulcanized rubbers -, novolaks, unsaturated polyester resins, any mixtures, copolymers and / or blends of the aforementioned compounds, as well as others known to those skilled in the art - in particular as thermosets known compounds that can be used in the form of corresponding prepolymers.
Im Halbzeug kann ein Harz aus nur einer Verbindung oder ein Harz aus einem Blend und/oder Copolymer verschiedener Verbin dungen vorliegen. A resin composed of just one compound or a resin composed of a blend and / or copolymer of different compounds can be present in the semi-finished product.
Zum Erhalt spezifischer Eigenschaften des Halbzeugs und/oder den ausgehärteten Duroplasten daraus, kann dem Harz oder der Harzmischung ein oder mehrere Füllstoff(e) und/oder ein oder mehrere Additiv (e) zugemischt sein. In order to obtain specific properties of the semi-finished product and / or the cured thermosetting plastics from it, one or more fillers and / or one or more additives can be added to the resin or the resin mixture.
Nach einer vorteilhaften Ausführungsform der Erfindung wird das Halbzeug an das zu bestückende und/oder verkapselnde leistungselektronische Bauteil vorkonfektioniert und ange passt. Dafür gibt es verschiedene Genauigkeitsgrade, die je nach Anwendung eingesetzt werden. Insbesondere kann hier mas- senfertigungstauglich ein in gewissen Grenzen überall ein- setzbares Halbzeug vorkonfektioniert werden, es kann aber auch - je nach Anwendung für jedes Bauteil, ein genau passen des Halbzeug extra vordimensioniert werden. Dazu liegen im Sinne der vorliegenden Erfindung keine Einschränkungen vor. According to an advantageous embodiment of the invention, the semifinished product is prefabricated and adapted to the power electronic component to be equipped and / or encapsulated. There are different degrees of accuracy that are used depending on the application. In particular, here mass A semi-finished product that can be used anywhere within certain limits can be prefabricated so that it is suitable for production, but - depending on the application for each component, a precisely fitting semi-finished product can be specially pre-dimensioned. There are no restrictions for this in the context of the present invention.
Beispielsweise wird das Halbzeug beim Vorkonfektionieren in seiner Größe und/oder Form, seinem Umfang, seiner (Schicht-) Dicke, seiner Oberflächenbeschaffenheit und/oder seiner Ver arbeitbarkeit - jeweils die genannten Kriterien einzeln oder gemeinsam oder in beliebigen Kombinationen realisiert - an den Materialauftrag des Verbindungsmaterials, das Substrat und/oder das zu verkapselnden Bauteil angepasst. Vor allem die Anpassungen in Form, Gestalt, Winkelabmessung, Dicke, Hö he, Breite, Länge und/oder allgemein der Größe nennt man da bei „Vorkonfektionieren". For example, the semifinished product in its size and / or shape, its scope, its (layer) thickness, its surface properties and / or its processability - the criteria mentioned individually or jointly or in any combination - is implemented on the material application of the Connection material, the substrate and / or the component to be encapsulated adapted. Above all, the adjustments in shape, shape, angular dimensions, thickness, height, width, length and / or generally the size are called "pre-assembling".
Als Verbindungsmaterial eignet sich beispielsweise ein Sin termaterial und/oder ein Lotmaterial und/oder ein elektrisch leitfähiges Kunststoffmaterial und/oder ein Leitkleber. Bei spiele für Sinterpasten sind Silber- und/oder Kupfer-basierte Sinterpasten, beispielsweise von den Herstellern Alpha oder Heraeus, die als Pasten und/oder auch als Formteile einsetz- bar sind. For example, a sintered material and / or a solder material and / or an electrically conductive plastic material and / or a conductive adhesive are suitable as connecting material. Examples of sintering pastes are silver- and / or copper-based sintering pastes, for example from the manufacturers Alpha or Heraeus, which can be used as pastes and / or also as molded parts.
Als Lotmaterialien eignen sich typischerweise die Lotverbin dungen, insbesondere in Form von Legierungen, z.B. The solder connections, in particular in the form of alloys, e.g.
SnAg3Cu0.5, SnAg3CuO.7 SnCu0.7, SnAg3.5, Sn-58Bi, die wiede rum als Pasten und/oder auch als Formteile einsetzbar sind. SnAg3Cu0.5, SnAg3CuO.7, SnCu0.7, SnAg3.5, Sn-58Bi, which in turn can be used as pastes and / or as molded parts.
Als Leitkleber können beispielsweise solche auf Epoxidharz- Basis eingesetzt werden, oder auf Acrylat-Harz-Basis - wiederum beispielsweise - mit metallischen Füllstoffen die als Leitmedium, beispielsweise Silberpartikel, einsetzbar sind. Nach einer vorteilhaften Ausführungsform des Verfahrens ver bleibt das nicht verflossene Harz des Halbzeugs nach dem Drucksintern auf dem Substrat als Isolation. As conductive adhesives, for example, those based on epoxy resin can be used, or based on acrylate resin - again for example - with metallic fillers that can be used as the conductive medium, for example silver particles. According to an advantageous embodiment of the method, the non-flowed resin of the semifinished product remains on the substrate as insulation after pressure sintering.
Nach einer anderen Ausführungsform wird überstehendes Harz des Halbzeugs nach der Bestückung strukturiert und/oder abge trennt. According to another embodiment, protruding resin of the semifinished product is structured and / or separated after assembly.
Dazu wird beispielsweise das überstehende Halbzeug nach er folgter Verkapselung abgezogen, abgeschnitten und/oder ab ge- lasert. For this purpose, for example, the protruding semifinished product is pulled off, cut off and / or lasered off after encapsulation has taken place.
Im Verfahren zur Bestückung und simultanen Versiege lung/Verkapselung der offenen Stellen wie Spalte und Zwi schenräume nach der Erfindung werden außer dem Verbindungsma terialauftrag vor der Bestückung mit Halbleiterbauteilen und Verbindung durch Drucksinterung und/oder Verlöten vorgefer tigte Halbzeug-Rahmen um den Verbindungsmaterialauftrag des leistungselektronischen Bauteils gelegt, so dass ein Teil des einen oder der (mehreren) Halbzeug-Rahmen während der Drucks interung flüssig wird und in die Spalten und Zwischenräume eindringt. Dort wird das noch flüssige Harz durch beispiels weise Kapillarkräfte gehalten. In the process for equipping and simultaneous sealing / encapsulation of the vacancies such as gaps and interstices according to the invention, in addition to the connection material application before the assembly with semiconductor components and connection by pressure sintering and / or soldering, pre-fabricated semi-finished product frames around the connection material application of the power electronic component placed so that a part of the one or more semi-finished product frames is fluid during printing and penetrates into the gaps and spaces. There the still liquid resin is held by example, capillary forces.
Zur Verbindung wird beispielsweise ein Drucksinterpresse, ei ne Vorrichtung zum Verlöten und/oder eine sonstige Behandlung durch Druck und/oder Temperatur zur elektrisch leitenden Ver bindung des metallisierten Substrats mit dem elektronischen, insbesondere leistungselektronischen, Halbleiterbauteil ein gesetzt. For connection, for example, a pressure sintering press, a device for soldering and / or some other treatment by pressure and / or temperature for the electrically conductive connection of the metallized substrate to the electronic, in particular power electronic, semiconductor component is used.
Als Drucksinterpresse kann beispielsweise eine mechanische Servo-Presse zur Erzeugung von mechanischem Druck auf zu fü gende Komponenten eingesetzt werden. A mechanical servo press for generating mechanical pressure on components to be joined can, for example, be used as a pressure sintering press.
Beispielsweise wird das Drucksintern mit den folgenden Para metern durchgeführt: Sinterdrücke beim Drucksintern bei spielsweise im Bereich von 10 bis 20 MPa, Temperaturen bei spielsweise im Bereich von 230°C bis 260°C mit Sinterzeiten beispielsweise im Bereich von 120 bis 240 Sekunden. Diese An gaben sind nur Beispiele und können jeweils in beliebigen Kombinationen und völlig unabhängig voneinander vorliegen. For example, the pressure sintering is carried out with the following parameters: Sintering pressures during pressure sintering for example in the range from 10 to 20 MPa, temperatures for example in the range from 230 ° C. to 260 ° C. with sintering times for example in the range from 120 to 240 seconds. These details are only examples and can be present in any combination and completely independently of one another.
Beispielsweise wird das Löten dabei, natürlich in Abhängig keit vom Schmelzpunkt, und/oder -bereich der eingesetzten Le gierungien) bei Prozesstemperaturen von 150°C bis 250°C durchgeführt. Beispielsweise hat das Lotmaterial „SAC305®" mit 96,5 Gew% Sn, 3,0Gew% Ag und 0,5 Gew% Cu einen Schmelz punkt von ca. 217°C. For example, the soldering is carried out at process temperatures of 150 ° C to 250 ° C, of course depending on the melting point and / or range of the alloy used. For example, the “SAC305®” solder material with 96.5% by weight Sn, 3.0% by weight Ag and 0.5% by weight Cu has a melting point of approx. 217 ° C.
Nach beendeter Verbindung durch beispielsweise Drucksinterung oder Verlöten und Abkühlen der leistungselektronischen Bau teile füllt das Harz als Duroplast irreversibel formfest die Zwischenräume und Spalten aus. After the connection has been completed by, for example, pressure sintering or soldering and cooling of the power electronic components, the resin, as a thermoset, fills the gaps and gaps irreversibly in a dimensionally stable manner.
Nach einer vorteilhaften Ausführungsform des Verfahrens wird das durch eine Verbindungstechnik wie Drucksintern und/oder Verlöten eines Bauteils zusammen mit dem Halbzeug verkapselte leistungselektronische Bauteil getempert, also nachgehärtet. According to an advantageous embodiment of the method, the power electronic component encapsulated by a connection technique such as pressure sintering and / or soldering of a component together with the semifinished product is tempered, that is to say post-cured.
Im Folgenden wird die Erfindung noch anhand eines schematisch dargestellten Ablaufs des Verfahrens in den Figuren 1 bis 4 näher erläutert: In the following, the invention is explained in more detail using a schematically illustrated sequence of the method in FIGS. 1 to 4:
Figur 1 zeigt in der Draufsicht zwei vordefinierte Einbau plätze mit Verbindungsmaterial-Auftrag, also beispielsweise Sintermaterialauftrag, Figure 1 shows a plan view of two predefined installation locations with application of connection material, for example application of sintered material,
Figur 2 zeigt die gleiche Draufsicht, wobei um beide Einbau plätze jeweils ein Halbzeug-Rahmen liegt, Figure 2 shows the same top view, with a semi-finished frame around each of the two installation spaces,
Figur 3 zeigt wieder die gleiche Draufsicht, einen Verarbei tungsschritt weiter mit den jeweils auf dem Verbindungsmate rial aufgebrachten leistungselektronischen Bauteilen und Figur 4 zeigt wieder einen Prozessschritt weiter nach dem Drucksintern die montierten leistungselektronischen Bauteile auf einem Substrat. FIG. 3 again shows the same top view, one processing step further with the power electronic components and components each applied to the connecting material FIG. 4 again shows, a process step further after pressure sintering, the mounted power electronic components on a substrate.
Figur 1 zeigt zwei Einbauplätze 1 und 2, die mit Halbleiter bauteilen wie Chip, Diode, FET Feld-Effekt Transistor, IGBT/Power FET-FC-Padkonfiguration, FFC- und/oder Dioden- Padkonfiguration 1 respektive 2 zu bestücken sind. Links ist ein Einbauplatz für ein multipotential anschließbares Halb leiterbauteil 1 und rechts ein Einbauplatz für ein unipoten- tial anschließbares Halbleiterbauteil 2 dargestellt. Beide befinden sich bei der hier gezeigten Ausführungsform auf ei nem Substrat, beispielsweise einem keramischen Substrat, das jeweils die für den Einbauplatz typische Metallisierung auf weist. Der - beispielsweise als IGBT-FC-Padkonfiguration vor liegende Einbauplatz 1 zeigt dabei einen elektrischen Pad- Anschluss 4 und wird deshalb bei der Montage multipotential elektrisch verbunden. Rechts davon liegt ein Einbauplatz 2 für ein Halbleiterbauteil wie ein FFC oder eine Dioden- Padkonfiguration vor, die bei der Montage unipotential ange schlossen, also elektrisch kontaktiert wird. Figure 1 shows two installation locations 1 and 2, which are to be equipped with semiconductor components such as chip, diode, FET field effect transistor, IGBT / Power FET-FC pad configuration, FFC and / or diode pad configuration 1 and 2, respectively. A mounting location for a multipotentially connectable semiconductor component 1 is shown on the left, and a mounting location for a unipotentially connectable semiconductor component 2 is shown on the right. In the embodiment shown here, both are located on a substrate, for example a ceramic substrate, each of which has the metallization typical for the installation location. The installation location 1, for example as an IGBT-FC pad configuration, shows an electrical pad connection 4 and is therefore electrically connected multipotentially during assembly. To the right of this is an installation location 2 for a semiconductor component such as an FFC or a diode pad configuration, which is unipotentially connected during assembly, ie is electrically contacted.
Beide Einbauplätze 1 und 2 haben gemäß Figur 1 schon mittig einen Auftrag an elektrisch leitfähigem Verbindungsmaterial 3, wobei der multipotential anzuschließende Einbauplatz 1 auch am Anschluss-Pad 5 zusätzlich einen Auftrag an elektrisch leitfähigem Verbindungsmaterial 3 hat. According to FIG. 1, both installation locations 1 and 2 already have an application of electrically conductive connection material 3 in the middle, the installation location 1 to be connected multipotentially also having an application of electrically conductive connection material 3 on connection pad 5.
Als elektrisch leitfähiges Verbindungsmaterial 3 eignet sich beispielsweise Sintermaterial und/oder Lotmaterial und/oder sonstiges elektrisch leitfähiges Kunststoffmaterial und/oder Leitkleber . For example, sintered material and / or solder material and / or other electrically conductive plastic material and / or conductive adhesive are suitable as the electrically conductive connecting material 3.
Figur 2 zeigt die gleiche Ansicht des Substrats von oben mit den Einbauplätzen 1 und 2, allerdings ist hier schon ein Halbzeug 6 als Rahmen um das elektrisch leitfähige Verbin dungsmaterial 3, beispielsweise das Sintermaterial 3, gelegt. Dabei ist besonders gut zu erkennen, wie der - möglicherweise sogar individuell - vor-konfektionierte Rahmen 6 das Sinter material auf dem Anschluss-Pad 5 des Einbauplatzes 1 umgibt. Das ist ein Beispiel für ein auf ein Halbleiterbauteil 1 vor konfektioniertes Halbzeug 6. Das Halbzeug 6, das als Isolati onsrahmen dient, ist ein Prepreg, also ein als B-Stage Poly mer, insbesondere vorteilhafterweise mit einer Faserverstär kung, beispielsweise einer Glasfaserverstärkung, vorliegendes Kunstharz. FIG. 2 shows the same view of the substrate from above with the installation locations 1 and 2, but here a semifinished product 6 is already placed as a frame around the electrically conductive connecting material 3, for example the sintered material 3. It is particularly easy to see how the - possibly even individually - pre-assembled frame 6 surrounds the sintered material on the connection pad 5 of the installation location 1. This is an example of a semi-finished product 6 pre-assembled on a semiconductor component 1. The semi-finished product 6, which serves as an isolation frame, is a prepreg, i.e. a B-stage polymer, particularly advantageously with a fiber reinforcement, for example a glass fiber reinforcement Synthetic resin.
Insbesondere ist aber auch die Verwendung von Halbzeugen 6 in der Massenfertigung Gegenstand der Erfindung, so dass der Einsatz von standardisierten Halbzeugen 6 für standardisierte leistungselektronischen Halbleiterbauteile ohne individuell angepasste Vor-Konfektionierung geplant ist. In particular, however, the use of semifinished products 6 in mass production is also the subject matter of the invention, so that the use of standardized semifinished products 6 for standardized power electronic semiconductor components without individually adapted pre-assembly is planned.
Das Halbzeug 6 kann beispielsweise automatisiert und/oder mit Standard-Bestückungsvorrichtungen platziert werden. The semi-finished product 6 can, for example, be placed in an automated manner and / or with standard equipping devices.
Als „standardisiert" werden dabei nicht nur international als Standard festgelegte Halbleiterbauteile bezeichnet, sondern generell als Massenprodukte hergestellte Halbleiterbauteile und dazu passende Halbzeuge sowie Bestückungsvorrichtungen. In this context, “standardized” is used not only to refer to semiconductor components established as international standards, but also to semiconductor components that are generally mass-produced and suitable semi-finished products and assembly devices.
Figur 3 zeigt in der Draufsicht von oben die beiden Halblei terbauteile 7 der beiden Einbauplätze 1 und 2, beispielsweise durch Warmbestückung aufgebrachte Dies 7. FIG. 3 shows, in a top view from above, the two semiconductor components 7 of the two installation locations 1 and 2, for example dies 7 applied by hot fitting.
Nach der Bestückung und Verbindung mit simultaner Isolation des Halbleiterbauteils (7) auf einem Einbauplatz (1,2) ist vorteilhafterweise vorgesehen, das bestückte Substrat noch einer Temperatur-Behandlung zu unterwerfen, damit die elektrisch leitfähige Verbindung und die isolierende Verkap selung verfestigt respektive vollständig durchgehärtet wer den. After the assembly and connection with simultaneous isolation of the semiconductor component (7) on a mounting location (1,2) is advantageously provided to subject the assembled substrate to a temperature treatment so that the electrically conductive connection and the insulating encapsulation solidified or completely hardened become.
So erfolgt ein Nachtempern des durch Drucksintern, Verlöten und/oder Verkleben verbundenen und durch Schmelzen des Halb zeugs verkapselten Bauteils zur vollständigen Aushärtung des Harzes respektive der elektrisch leitfähigen Sinter - , Löt - und/oder Klebeverbindung. Thus, the component connected by pressure sintering, soldering and / or gluing and encapsulated by melting the semi-finished product is re-tempered for complete curing of the Resin or the electrically conductive sintered, soldered and / or glued connection.
Figur 4 schließlich zeigt den in den Figuren 1 bis 3 aus der Vogelperspektive gezeigten Schichtaufbau des bestückten Sub strats an der Stelle der Einbauplätze 1 und 2 als Quer- schnittsansicht . Finally, FIG. 4 shows the layer structure of the populated substrate shown in FIGS. 1 to 3 from a bird's eye view at the location of the installation locations 1 and 2 as a cross-sectional view.
Zu erkennen sind bei beiden Bauteilen 1 und 2 folgende Schichten: Halbzeug-Schicht 6, die den Aufbau seitlich ein- rahmt, stellt das durch Drucksintern in den Zwischenräumen und/oder Spalten verteilte Harz aus dem Halbzeug 6. Schicht 3 zeigt das durch Drucksintern verfestigte Sintermaterial 3.The following layers can be seen in both components 1 and 2: Semifinished product layer 6, which laterally frames the structure, represents the resin from semifinished product 6 distributed by pressure sintering in the spaces and / or gaps. Layer 3 shows the solidified by pressure sintering Sintered material 3.
Die Bauteile 7 sitzen oben auf den durch Sintermaterial 3 galvanisch verbundenen und Harz 6 elektrisch isolierten Ein bauplätzen 1 und 2. The components 7 sit on top of the building sites 1 and 2 that are galvanically connected by sintered material 3 and electrically insulated with resin 6.
Durch die Erfindung werden vielfache Vorteile erzielt, insbe sondere wie die Prozessvereinfachung durch Simultanprozessie- rung, der Verzicht auf ein Dispensauftragsverfahren, wie das Underfill-Verfahren mit den entsprechenden Aufwänden und Feh lerquellen, die starke Verkürzung der Herstellungszeiten durch Vermeidung von langsamen Aushärteschritten und die wei tergehende Nutzung und Übernahme von bekannten Erfahrungen aus der Leiterplattenfertigung hinsichtlich des Materials und der Prozessierung. The invention achieves multiple advantages, in particular such as the process simplification through simultaneous processing, the waiver of a dispensing application process, such as the underfill process with the corresponding efforts and sources of error, the sharp reduction in production times by avoiding slow curing steps and the white Continued use and adoption of known experiences from circuit board production with regard to the material and processing.
Durch die Erfindung ist es erstmals möglich, in einem Pro zessschritt eine versiegelte isolierende Verkapselung durch ein verbindungstechnisches Verfahren wie beispielsweise das Drucksintern herzustellen. Dazu wird ein elektrisch isolie rendes Halbzeug im B-Zustand um das elektrisch leitfähige Verbindungsmaterial, beispielsweise das Sintermaterial, vor dem Drucksintern aufgebracht. Die Erfindung zeichnet sich vor allem dadurch aus, dass bei der Bestückung von halbleitenden Bauelementen in einem Arbeitsgang, vorzugsweise durch Druck- sintern, simultan elektrisch verbunden und elektrisch iso liert wird. The invention makes it possible for the first time to produce a sealed, insulating encapsulation in one process step using a connection method such as pressure sintering, for example. For this purpose, an electrically insulating semi-finished product in the B-state is applied to the electrically conductive connecting material, for example the sintered material, before pressure sintering. The invention is characterized above all by the fact that when assembling semiconducting components in one operation, preferably by printing sintering, is electrically connected and electrically isolated at the same time.

Claims

Patentansprüche Claims
1.Halbzeug (6) zur Verwendung bei der Bestückung eines leis tungselektronischen Bauteils (7) durch ein verbindungs technisches Verfahren, wobei das Halbzeug (6) einen Rah men, der ein Prepreg ist und elektrisch isoliert, bildet, der geeignet ist, den Verbindungsmaterial-Auftrag (3) auf einem metallisierten Einbauplatz (1,2) während der Bestü ckung zu umgeben, weil das Material des Halbzeugs eine simultane Verarbeitbarkeit von elektrischer Verbindung und elektrischer Isolation durch Verpressen des in Form des Halbzeugs vorliegenden Isolationswerkstoffes ermöglicht, da die Verarbeitungsparameter des elektrischen Verbin dungsmaterials und des Halbzeugs weitgehend kompatibel sind. 1. Semi-finished product (6) for use in the assembly of a power electronic component (7) by a technical connection process, the semi-finished product (6) forming a frame which is a prepreg and which is electrically insulated and which is suitable for the connection material -Order (3) to surround a metallized installation location (1,2) during the equipping, because the material of the semifinished product enables simultaneous processing of electrical connection and electrical insulation by pressing the insulation material in the form of the semifinished product, since the processing parameters of the electrical connec tion material and the semi-finished product are largely compatible.
2. Halbzeug nach Anspruch 1, das im Wesentlichen ein die lektrisches Harz ist. 2. Semi-finished product according to claim 1, which is essentially a dielectric resin.
3.Halbzeug nach Anspruch 1 oder 2, das ein durch Verstär kungsfasern verstärktes Kunstharz ist. 3. Semi-finished product according to claim 1 or 2, which is a synthetic resin reinforced by reinforcing fibers.
4.Halbzeug nach einem der vorstehenden Ansprüche, das ein Harz oder eine Harzmischung im B-Stage umfasst. 4. Semi-finished product according to one of the preceding claims, which comprises a resin or a resin mixture in the B-stage.
5.Halbzeug nach einem der vorstehenden Ansprüche, das ein mit Füllstoff gefülltes Harz oder eine mit Füllstoff ge füllte Harzmischung umfasst. 5. Semi-finished product according to one of the preceding claims, which comprises a resin filled with filler or a resin mixture filled with filler.
6.Halbzeug nach einem der vorstehenden Ansprüche, wobei das Material des Halbzeugs ausgewählt ist aus der Gruppe folgender Verbindungen: Epoxidharz, Polyurethanharz, Kautschuk, Novolak und/oder ungesättigtes Polyesterharz. 6. Semi-finished product according to one of the preceding claims, wherein the material of the semi-finished product is selected from the group of the following compounds: epoxy resin, polyurethane resin, rubber, novolak and / or unsaturated polyester resin.
7.Halbzeug nach einem der vorstehenden Ansprüche, das auf ein zu bestückendes leistungselektronisches Bauteil (7) vorkonfektioniert ist. 7. Semi-finished product according to one of the preceding claims, which is pre-assembled on a power electronic component (7) to be fitted.
8.Halbzeug nach einem der vorstehenden Ansprüche, das auf zumindest ein Anschluss-Pad (5) des zu verkapselnden leistungselektronischen Bauteils (1) zurechtgeschnitten ist. 8. Semi-finished product according to one of the preceding claims, which is cut to size on at least one connection pad (5) of the power electronic component (1) to be encapsulated.
9.Halbzeug nach einem der vorstehenden Ansprüche, das mas senfertigungstauglich auf standardisierte Bauteile (7) zurechtgeschnitten ist. 9. Semi-finished product according to one of the preceding claims, which is cut to size in a manner suitable for mass production on standardized components (7).
10. Verfahren zur Verkapselung eines leistungselektro nischen Bauteils, folgende Verfahrensschritte umfassend:10. A method for encapsulating a power electronic component, comprising the following process steps:
Bereitstellen zumindest eines Einbauplatzes (1,2) mit tels Metallisierung auf einem Substrat Providing at least one installation location (1,2) with means of metallization on a substrate
Auftrag eines elektrisch leitfähigen Verbindungsmateri als (3) Application of an electrically conductive connection material as (3)
Vorkonfektionieren zumindest eines Halbzeugs (6) in Form eines Rahmens zur Umrandung des Verbindungsmaterialauf trags (3) auf einem Einbauplatz (1,2) Prefabrication of at least one semi-finished product (6) in the form of a frame to border the connection material order (3) on an installation site (1,2)
Platzierung des vorkonfektionierten Halbzeugs (6) auf einem Einbauplatz (1,2) um das elektrisch leitfähige Verbindungsmaterial (3) herum Placement of the pre-assembled semi-finished product (6) on an installation location (1, 2) around the electrically conductive connection material (3)
Bestückung des Einbauplatzes (1,2) und des Verbindungs materials (3) mit einem Halbleiterbauteil (7)Equipping the installation location (1,2) and the connecting material (3) with a semiconductor component (7)
Einbringen des so vorbereiteten Substrats in eine Vor richtung zur Durchführung des verbindungstechnischen Verfahrens, insbesondere in eine Drucksinterpresse, simultane elektrisch leitende Verbindung des Halbleiter bauteils (7) und Isolierung aus dem Halbzeug (6) auf dem metallisierten Einbauplatz (1,2) des Substrats. Introducing the substrate prepared in this way in a device for performing the connection process, in particular in a pressure sintering press, simultaneous electrically conductive connection of the semiconductor component (7) and insulation from the semifinished product (6) on the metallized installation location (1,2) of the substrate.
Verfahren nach Anspruch 10, weiterhin den Verfahrens schritt des Nachtempern des durch Drucksintern, Verlöten und/oder Verkleben elektrisch verbundenen und durch Schmelzen des Halbzeugs verkapselten Bauteils zur vollständigen Aus härtung des Harzes umfassend. The method of claim 10, further comprising the step of Subsequent tempering of the component electrically connected by pressure sintering, soldering and / or gluing and encapsulated by melting the semi-finished product for complete curing of the resin.
12. Verwendung eines oder mehrerer Halbzeug(e) bei der Prozessierung leistungselektronischer Bauteile. 12. Use of one or more semi-finished products in the processing of power electronic components.
13. Verwendung nach Anspruch 12 bei der simultanen Her stellung einer elektrischen Verbindung und einer Isolation durch Drucksintern. 13. Use according to claim 12 in the simultaneous Her position of an electrical connection and insulation by pressure sintering.
14. Verwendung nach einem der Ansprüche 12 oder 13, wo bei das oder die Halbzeug(e) in Form vorkonfektio nierter, teilweise vernetzter Materialien im B- Stage vorliegen. 14. Use according to one of claims 12 or 13, where the semi-finished product (s) are present in the form of prefabricated, partially crosslinked materials in the B-stage.
15. Verwendung nach einem der Ansprüche 12 bis 14 bei der Herstellung von Verkapselungen bei der Bestü ckung leistungselektronischer Bauteile. 15. Use according to one of claims 12 to 14 in the production of encapsulations when equipping power electronic components.
EP20771481.7A 2019-09-06 2020-09-03 Semifinished product for populating with components, method for populating same with components, and use of the semifinished product Pending EP4008021A1 (en)

Applications Claiming Priority (3)

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DE102019213609 2019-09-06
DE102019214996.0A DE102019214996A1 (en) 2019-09-06 2019-09-30 Semi-finished product for component assembly, method for component assembly and use of the semi-finished product
PCT/EP2020/074517 WO2021043855A1 (en) 2019-09-06 2020-09-03 Semifinished product for populating with components, method for populating same with components, and use of the semifinished product

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US20090315162A1 (en) * 2008-06-20 2009-12-24 Yong Liu Micro-Modules with Molded Passive Components, Systems Using the Same, and Methods of Making the Same
DE102013219303A1 (en) * 2013-09-25 2015-03-26 Robert Bosch Gmbh Circuit module and method of fabricating a circuit module
US10192849B2 (en) * 2014-02-10 2019-01-29 Infineon Technologies Ag Semiconductor modules with semiconductor dies bonded to a metal foil
DE102014206608A1 (en) * 2014-04-04 2015-10-08 Siemens Aktiengesellschaft A method of mounting an electrical component using a hood and a hood suitable for use in this method
DE102014211467A1 (en) * 2014-06-16 2015-12-17 Robert Bosch Gmbh Contact system with an electrically conductive laminate foil
DE102016115629A1 (en) * 2016-08-23 2018-03-01 Osram Opto Semiconductors Gmbh METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
DE102016125521B4 (en) * 2016-12-22 2020-10-15 Infineon Technologies Ag Common method for connecting an electronic chip to a connector body and for forming the connector body

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US20220336408A1 (en) 2022-10-20

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